ATE158441T1 - Eingeschlossener transistor mit eingegrabenem kanal - Google Patents

Eingeschlossener transistor mit eingegrabenem kanal

Info

Publication number
ATE158441T1
ATE158441T1 AT89908745T AT89908745T ATE158441T1 AT E158441 T1 ATE158441 T1 AT E158441T1 AT 89908745 T AT89908745 T AT 89908745T AT 89908745 T AT89908745 T AT 89908745T AT E158441 T1 ATE158441 T1 AT E158441T1
Authority
AT
Austria
Prior art keywords
transistor
channel region
buried channel
enclosed
regions
Prior art date
Application number
AT89908745T
Other languages
English (en)
Inventor
Thomas E Harrington Iii
Original Assignee
Dallas Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dallas Semiconductor filed Critical Dallas Semiconductor
Application granted granted Critical
Publication of ATE158441T1 publication Critical patent/ATE158441T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Semiconductor Memories (AREA)
AT89908745T 1988-06-23 1989-06-23 Eingeschlossener transistor mit eingegrabenem kanal ATE158441T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/210,242 US4906588A (en) 1988-06-23 1988-06-23 Enclosed buried channel transistor

Publications (1)

Publication Number Publication Date
ATE158441T1 true ATE158441T1 (de) 1997-10-15

Family

ID=22782136

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89908745T ATE158441T1 (de) 1988-06-23 1989-06-23 Eingeschlossener transistor mit eingegrabenem kanal

Country Status (6)

Country Link
US (1) US4906588A (de)
EP (1) EP0422129B1 (de)
JP (1) JP2716829B2 (de)
AT (1) ATE158441T1 (de)
DE (1) DE68928326T2 (de)
WO (1) WO1989012910A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US5180682A (en) * 1988-08-18 1993-01-19 Seiko Epson Corporation Semiconductor device and method of producing semiconductor device
US5296401A (en) * 1990-01-11 1994-03-22 Mitsubishi Denki Kabushiki Kaisha MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof
US5196360A (en) * 1990-10-02 1993-03-23 Micron Technologies, Inc. Methods for inhibiting outgrowth of silicide in self-aligned silicide process
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US5440221A (en) * 1992-07-08 1995-08-08 Benchmarg Microelectronics, Inc. Method and apparatus for monitoring batttery capacity with charge control
US5444004A (en) * 1994-04-13 1995-08-22 Winbond Electronics Corporation CMOS process compatible self-alignment lateral bipolar junction transistor
US5654213A (en) * 1995-10-03 1997-08-05 Integrated Device Technology, Inc. Method for fabricating a CMOS device
US5705437A (en) * 1996-09-25 1998-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Trench free process for SRAM
US6156591A (en) * 1998-01-16 2000-12-05 Texas Instruments - Acer Incorporated Method of fabricating CMOS transistors with self-aligned planarization twin-well by using fewer mask counts
US6294416B1 (en) * 1998-01-23 2001-09-25 Texas Instruments-Acer Incorporated Method of fabricating CMOS transistors with self-aligned planarization twin-well by using fewer mask counts
US5929493A (en) * 1998-03-31 1999-07-27 Texas Instruments--Acer Incorporated CMOS transistors with self-aligned planarization twin-well by using fewer mask counts
DE19913375B4 (de) * 1999-03-24 2009-03-26 Infineon Technologies Ag Verfahren zur Herstellung einer MOS-Transistorstruktur
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US6747318B1 (en) * 2001-12-13 2004-06-08 Lsi Logic Corporation Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides
US7196375B2 (en) * 2004-03-16 2007-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. High-voltage MOS transistor
WO2009060670A1 (ja) * 2007-11-09 2009-05-14 Sanken Electric Co., Ltd. 半導体装置及びその製造方法
US8981445B2 (en) 2012-02-28 2015-03-17 Texas Instruments Incorporated Analog floating-gate memory with N-channel and P-channel MOS transistors

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3996655A (en) * 1973-12-14 1976-12-14 Texas Instruments Incorporated Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product
GB1569897A (en) * 1975-12-31 1980-06-25 Ibm Field effect transistor
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
JPS6042626B2 (ja) * 1976-05-18 1985-09-24 松下電器産業株式会社 半導体装置の製造方法
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
JPS5322480A (en) * 1976-08-13 1978-03-01 Hitachi Ltd Measuring device for analog data
DE2706623A1 (de) * 1977-02-16 1978-08-17 Siemens Ag Mis-fet fuer hohe source-drain-spannungen
US4142926A (en) * 1977-02-24 1979-03-06 Intel Corporation Self-aligning double polycrystalline silicon etching process
US4205330A (en) * 1977-04-01 1980-05-27 National Semiconductor Corporation Method of manufacturing a low voltage n-channel MOSFET device
DE2802838A1 (de) * 1978-01-23 1979-08-16 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
US4236167A (en) * 1978-02-06 1980-11-25 Rca Corporation Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels
US4173818A (en) * 1978-05-30 1979-11-13 International Business Machines Corporation Method for fabricating transistor structures having very short effective channels
JPS5526666A (en) * 1978-08-15 1980-02-26 Nec Corp Insulated gate type semiconductor device
DE2842589A1 (de) * 1978-09-29 1980-05-08 Siemens Ag Feldeffekttransistor mit verringerter substratsteuerung der kanalbreite
US4209349A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4229756A (en) * 1979-02-09 1980-10-21 Tektronix, Inc. Ultra high speed complementary MOS device
JPS55151363A (en) * 1979-05-14 1980-11-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Mos semiconductor device and fabricating method of the same
EP0024905B1 (de) * 1979-08-25 1985-01-16 Zaidan Hojin Handotai Kenkyu Shinkokai Feldeffekttransistor mit isoliertem Gate
US4514897A (en) * 1979-09-04 1985-05-07 Texas Instruments Incorporated Electrically programmable floating gate semiconductor memory device
DE3070209D1 (en) * 1980-07-23 1985-03-28 Blendax Werke Schneider Co Adducts from diisocyanates and methacryloylalkylethers, -alcoxybenzenes resp. -alcoxycycloalcanes and their use
JPS57193065A (en) * 1981-05-22 1982-11-27 Matsushita Electric Works Ltd Insulated gate field effect transistor
EP0071335B1 (de) * 1981-07-27 1986-10-15 Xerox Corporation Feldeffekttransistor
US4677735A (en) * 1984-05-24 1987-07-07 Texas Instruments Incorporated Method of providing buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layer
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
US4746624A (en) * 1986-10-31 1988-05-24 Hewlett-Packard Company Method for making an LDD MOSFET with a shifted buried layer and a blocking region
JPH063808B2 (ja) * 1987-06-03 1994-01-12 株式会社東芝 Ｍｏｓ型半導体装置の製造方法
JP3025813B2 (ja) * 1992-02-10 2000-03-27 日本軽金属株式会社 微小構造断面の押出成形用アルミニウム合金

Also Published As

Publication number Publication date
WO1989012910A1 (en) 1989-12-28
DE68928326T2 (de) 1998-02-05
JPH06500894A (ja) 1994-01-27
EP0422129B1 (de) 1997-09-17
HK1003040A1 (en) 1998-09-30
JP2716829B2 (ja) 1998-02-18
US4906588A (en) 1990-03-06
EP0422129A1 (de) 1991-04-17
EP0422129A4 (en) 1991-09-04
DE68928326D1 (de) 1997-10-23

Similar Documents

Publication Publication Date Title
ATE158441T1 (de) Eingeschlossener transistor mit eingegrabenem kanal
EP0335750A3 (de) Vertikaler Leistungs-MOSFET mit hoher Durchbruchspannung und hoher Umschaltungsgeschwindigkeit
EP0279403A3 (de) Vertikaler MOS-Feldeffekttransistor mit hoher Spannungsfestigkeit und hoher Schaltgeschwindigkeit
ATE37967T1 (de) Halbleiterbauelement mit kontaktloch.
EP0330142A3 (de) Mehrfach-Steuerelektroden-Feldeffekttransistor
ATE127618T1 (de) Halbleiteranordnung mit verbessertem transistor vom isolierten gatetyp.
KR920008964A (ko) 전송 전하 증폭 장치
JPS56126977A (en) Junction type field effect transistor
DE68929359D1 (de) Laterale bipolare Transistoranordnungen mit isolierter Steuerelektrode mit geteilter Anode
JPS57121271A (en) Field effect transistor
KR860001489A (ko) 반도체장치
JPS6477967A (en) Soi type mos semiconductor device
JPS6431471A (en) Semiconductor device
JPS5662372A (en) Junction type field effect semiconductor device
JPS5768078A (en) Normally off type field effect transistor
JPS6439065A (en) Thin film field-effect transistor
JPS5524433A (en) Composite type semiconductor device
JPS6480062A (en) High withstand voltage unipolar and bipolar transistor
JPS5538080A (en) Semiconductor device
JPS54141699A (en) Chemically responding element
JPS5543872A (en) Insulating gate field effect transistor
JPS57103362A (en) Field effect transistor
JPS6442168A (en) Semiconductor device
JPS5371573A (en) Field effect transistor of isolating gate type
JPS57113285A (en) Semiconductor device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties