JPS6442168A - Semiconductor device - Google Patents

Abstract

PURPOSE:To read written data at high speed by forming an impurity diffusion of low resistance constructing a drain or source region by forming in a self- alignment manner a second conduction type impurity region using a field oxide film and a gate electrode as a mask. CONSTITUTION:A gate electrode and a gate wiring 12 are separately formed, and an impurity diffusion region which constructs a drain region 10 or a source region 11 is formed in a self-alignment manner using a gate electrode 9 and a fixed oxide film 7 as a mask. Hereby, an impurity is diffused simultaneously to the gate wiring 12 and an intersection of the impurity diffusion regions 10, 11 upon formation of the impurity diffusion region. Thus, resistance of the drain region being a signal extraction line is sharply reduced, assuring high speed read of written data.