JPS5587455A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5587455A JPS5587455A JP16087678A JP16087678A JPS5587455A JP S5587455 A JPS5587455 A JP S5587455A JP 16087678 A JP16087678 A JP 16087678A JP 16087678 A JP16087678 A JP 16087678A JP S5587455 A JPS5587455 A JP S5587455A
- Authority
- JP
- Japan
- Prior art keywords
- region
- oxide film
- active region
- field oxide
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain a large scale IC by a method wherein the strain of a field oxide film, which affects an active region, is made small only by the division of a field region without making the field oxide film thinner.
CONSTITUTION: An oxide thin film region 6, which has no field oxide film, is formed on the circumference of a gate circuit (active region) 1. In this constitution, the region 6 absorbs the strain created by a field oxide film 2, thus not arriving at an active region 1A. The strain of the active region 1A is influenced only by an oxide thick film 7 between the region 6 and the active region, which becomes remarkably small. The width of the region 6 can be extremely narrow. The main wiring is provided on a region 2 not on the region 6, or it may be orthogonally arranged with the region 6. By arranging such, the wiring area running on the region 6 becomes very small and the increase of the capacitance can almost be neglected.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16087678A JPS5587455A (en) | 1978-12-25 | 1978-12-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16087678A JPS5587455A (en) | 1978-12-25 | 1978-12-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5587455A true JPS5587455A (en) | 1980-07-02 |
Family
ID=15724272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16087678A Pending JPS5587455A (en) | 1978-12-25 | 1978-12-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587455A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6295845A (en) * | 1985-10-22 | 1987-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
-
1978
- 1978-12-25 JP JP16087678A patent/JPS5587455A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6295845A (en) * | 1985-10-22 | 1987-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
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