JPS5587455A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5587455A
JPS5587455A JP16087678A JP16087678A JPS5587455A JP S5587455 A JPS5587455 A JP S5587455A JP 16087678 A JP16087678 A JP 16087678A JP 16087678 A JP16087678 A JP 16087678A JP S5587455 A JPS5587455 A JP S5587455A
Authority
JP
Japan
Prior art keywords
region
oxide film
active region
field oxide
strain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16087678A
Other languages
Japanese (ja)
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16087678A priority Critical patent/JPS5587455A/en
Publication of JPS5587455A publication Critical patent/JPS5587455A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a large scale IC by a method wherein the strain of a field oxide film, which affects an active region, is made small only by the division of a field region without making the field oxide film thinner.
CONSTITUTION: An oxide thin film region 6, which has no field oxide film, is formed on the circumference of a gate circuit (active region) 1. In this constitution, the region 6 absorbs the strain created by a field oxide film 2, thus not arriving at an active region 1A. The strain of the active region 1A is influenced only by an oxide thick film 7 between the region 6 and the active region, which becomes remarkably small. The width of the region 6 can be extremely narrow. The main wiring is provided on a region 2 not on the region 6, or it may be orthogonally arranged with the region 6. By arranging such, the wiring area running on the region 6 becomes very small and the increase of the capacitance can almost be neglected.
COPYRIGHT: (C)1980,JPO&Japio
JP16087678A 1978-12-25 1978-12-25 Semiconductor device Pending JPS5587455A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16087678A JPS5587455A (en) 1978-12-25 1978-12-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16087678A JPS5587455A (en) 1978-12-25 1978-12-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5587455A true JPS5587455A (en) 1980-07-02

Family

ID=15724272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16087678A Pending JPS5587455A (en) 1978-12-25 1978-12-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587455A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295845A (en) * 1985-10-22 1987-05-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295845A (en) * 1985-10-22 1987-05-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

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