JP5856827B2 - 半導体装置 - Google Patents
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- JP5856827B2 JP5856827B2 JP2011268681A JP2011268681A JP5856827B2 JP 5856827 B2 JP5856827 B2 JP 5856827B2 JP 2011268681 A JP2011268681 A JP 2011268681A JP 2011268681 A JP2011268681 A JP 2011268681A JP 5856827 B2 JP5856827 B2 JP 5856827B2
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 239000012212 insulator Substances 0.000 claims description 98
- 125000001475 halogen functional group Chemical group 0.000 claims description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 239000012535 impurity Substances 0.000 description 87
- 239000000758 substrate Substances 0.000 description 34
- 229910007541 Zn O Inorganic materials 0.000 description 32
- 238000000034 method Methods 0.000 description 32
- 150000001875 compounds Chemical class 0.000 description 25
- 229910052796 boron Inorganic materials 0.000 description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000011135 tin Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- -1 In—Sn—O Chemical class 0.000 description 7
- 239000000370 acceptor Substances 0.000 description 7
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical group [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical group [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Chemical group 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910010277 boron hydride Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
図1(A)に、本実施の形態の半導体装置の例を図示する。ここでは、トランジスタのチャネル方向の断面模式図を示す。トランジスタは単結晶半導体の基板101上に厚さ5nm以上100nm以下の高仕事関数化合物半導体よりなる高仕事関数電極104を設け、基板101との間に適切な厚さのゲート絶縁物109を有する。
図1(C)に本実施の形態を示す。本実施の形態は絶縁表面上に作製された本発明の一態様のトランジスタである。単結晶半導体の基板101上に厚さ50nm以上の埋め込み絶縁物107と、その上に厚さ50nm以上のSOI層106を有するSOI基板にトランジスタを作製する。SOI層106上に適切な厚さのゲート絶縁物109を形成し、さらに、これに接して、厚さ5nm以上100nm以下の高仕事関数化合物半導体よりなる高仕事関数電極104を設ける。
図5を用いて本実施の形態を説明する。本実施の形態では、SOI層に形成され、チャネル領域にn型の浅い不純物領域112を有するトランジスタの作製方法について説明する。上記に説明したようにチャネル領域の導電型や不純物濃度を変更することにより、トランジスタのしきい値を変化させることができる。なお、以下の作製工程の詳細に関しては実施の形態1あるいは公知の半導体作製技術を参照すればよい。
本実施の形態では、本発明の一態様に係る中央処理装置(CPU)の構成について説明する。本実施の形態で説明するCPUは実施の形態1乃至3で説明したトランジスタを用いた集積回路に作製される。
本発明の一態様に係るトランジスタを用いることで、集積度の高い半導体集積回路、信頼性が高い電子機器、消費電力の低い電子機器を提供することが可能である。本発明の一態様に係るトランジスタは、表示装置、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。
102a ソース
102b ドレイン
103a エクステンション領域
103b エクステンション領域
104 高仕事関数電極
105a ハロー領域
105b ハロー領域
106 SOI層
107 埋め込み絶縁物
108 低濃度不純物領域
109 ゲート絶縁物
110 金属配線
111a 側壁
111b 側壁
112 n型の浅い不純物領域
201 基板
202a ソース
202b ドレイン
203a エクステンション領域
203b エクステンション領域
204 ゲート
205a ハロー領域
205b ハロー領域
301 基板
302a ソース
302b ドレイン
303a エクステンション領域
303b エクステンション領域
304 ゲート
306 SOI層
307 埋め込み絶縁物
308 チャネル領域
401 基板
402a ソース
402b ドレイン
404 ゲート
406 SOI層
407 埋め込み絶縁物
408 チャネル領域
501 基板
502 ALU
503 ALUコントローラ
504 インストラクションデコーダ
505 割り込みコントローラ
506 タイミングコントローラ
507 レジスタ
508 レジスタコントローラ
509 バスインターフェース
510 ROM
511 ROMインターフェース
601 筐体
602 表示部
603 支持台
611 筐体
612 筐体
613 表示部
614 表示部
615 マイクロホン
616 スピーカー
617 操作キー
618 スタイラス
621 筐体
622 表示部
623 音声入力部
624 音声出力部
625 操作キー
626 受光部
631 筐体
632 表示部
633 操作キー
Claims (5)
- チャネル領域のドナーまたはアクセプタの濃度Nd[nm−3](ただし、Nd<10−3)と酸化シリコン換算のゲート絶縁物の厚さtox[nm]とチャネル長L[nm]の間に、Nd 1/2×tox×L<1[nm1/2]という関係があり、
前記ゲート絶縁物に接して設けられたインジウム、錫あるいは亜鉛の少なくとも一つと窒素とを有するn型半導体のゲート電極とを有し、
前記n型半導体は、仕事関数が5.0電子ボルト以上であることを特徴とする半導体装置。 - チャネル領域のドナーまたはアクセプタの濃度Nd[nm−3]と酸化シリコン換算のゲート絶縁物の厚さtox[nm]とチャネル長L[nm]の間に、Nd 1/2×tox×L<1[nm1/2]という関係があり、
チャネル領域に接するエクステンション領域と、
前記エクステンション領域とソースあるいはドレインのいずれか一に接するハロー領域と、
前記ゲート絶縁物に接して設けられたインジウム、錫あるいは亜鉛の少なくとも一つと窒素とを有するn型半導体のゲート電極とを有し、
前記n型半導体は、仕事関数が5.0電子ボルト以上であることを特徴とする半導体装置。 - 前記チャネル領域は厚さ50nm以上のSOI層に設けられていることを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記SOI層は厚さ50nm以上の埋め込み絶縁物上に設けられていることを特徴とする請求項3に記載の半導体装置。
- 前記n型半導体のキャリア濃度が1×10 20 cm −3 以上であることを特徴とする請求項1乃至請求項4のいずれか一に記載の半導体装置。
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JP2011268681A JP5856827B2 (ja) | 2010-12-09 | 2011-12-08 | 半導体装置 |
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JP2010274262 | 2010-12-09 | ||
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JP2011268681A JP5856827B2 (ja) | 2010-12-09 | 2011-12-08 | 半導体装置 |
Publications (3)
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JP2012138575A JP2012138575A (ja) | 2012-07-19 |
JP2012138575A5 JP2012138575A5 (ja) | 2014-10-30 |
JP5856827B2 true JP5856827B2 (ja) | 2016-02-10 |
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JP2011268681A Expired - Fee Related JP5856827B2 (ja) | 2010-12-09 | 2011-12-08 | 半導体装置 |
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US (1) | US8957462B2 (ja) |
JP (1) | JP5856827B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US8575678B2 (en) | 2011-01-13 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device with floating gate |
US9001564B2 (en) | 2011-06-29 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for driving the same |
US9082861B2 (en) | 2011-11-11 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with oxide semiconductor channel having protective layer |
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US9590111B2 (en) | 2013-11-06 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
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