JPS63210023A - InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 - Google Patents
InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法Info
- Publication number
- JPS63210023A JPS63210023A JP4115287A JP4115287A JPS63210023A JP S63210023 A JPS63210023 A JP S63210023A JP 4115287 A JP4115287 A JP 4115287A JP 4115287 A JP4115287 A JP 4115287A JP S63210023 A JPS63210023 A JP S63210023A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- compound
- compd
- heated
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000013078 crystal Substances 0.000 title description 5
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 15
- 239000011701 zinc Substances 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000003054 catalyst Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光機能材料、半導体材料および触媒材料として
有用な新規化合物であるInGaZn40tで示される
六方晶系の層状構造を有する化合物およびその製造法に
関する。
有用な新規化合物であるInGaZn40tで示される
六方晶系の層状構造を有する化合物およびその製造法に
関する。
従来技術
従来(Yb”Fe”0x)nFe”0(nは整数を表わ
す)で示される大方晶系の層状構造を有する化合物は本
出願人によって合成され知られている。
す)で示される大方晶系の層状構造を有する化合物は本
出願人によって合成され知られている。
YbFeOs、Yb1Pe301 、 Yb3Fe=0
+o及びYb4Fe50゜の大方晶系としての格子定数
、YbO+、s層+ FeO+、s層、 Feast、
s層の単位格子内における層数を示すと表−1の通り
である。
+o及びYb4Fe50゜の大方晶系としての格子定数
、YbO+、s層+ FeO+、s層、 Feast、
s層の単位格子内における層数を示すと表−1の通り
である。
これらの化合物は酸化鉄1モルに対して、YbFeOs
がnモルの割合で化合していると考えられる層状構造を
持つ化合物である。
がnモルの割合で化合していると考えられる層状構造を
持つ化合物である。
発明の目的
本発明は(YbFeOz) 、 FeOの化学式におい
て、n=1/4に相当し、yb”の代わりにIr13+
を、 Fe3・の代わりにGa”°を、Fe”″の代わ
りにZn”を置きかえて得られた新規化合物を提供する
にある。
て、n=1/4に相当し、yb”の代わりにIr13+
を、 Fe3・の代わりにGa”°を、Fe”″の代わ
りにZn”を置きかえて得られた新規化合物を提供する
にある。
発明の構成
本発明のInGaZn40.で示される化合物は、イオ
ン結晶モデルではIn”(Ga” 、 Zn”)Zn3
”07”−として記載され、その構造はInO+、s層
+ (Ga” +Zn”つ0□、2層およびZnO層の
積層によって形成されており、著しい構造異方性を持つ
ことがその特徴の一つであるa Zn”イオン数の1/
4はGa””と共に(Ga” +Zn” )Ox、s層
を作り、残りの374はZnO層を作っている。六方晶
系としての格子定数は次の通りである。
ン結晶モデルではIn”(Ga” 、 Zn”)Zn3
”07”−として記載され、その構造はInO+、s層
+ (Ga” +Zn”つ0□、2層およびZnO層の
積層によって形成されており、著しい構造異方性を持つ
ことがその特徴の一つであるa Zn”イオン数の1/
4はGa””と共に(Ga” +Zn” )Ox、s層
を作り、残りの374はZnO層を作っている。六方晶
系としての格子定数は次の通りである。
a =3.284 ±o、ooi <人)C=32.
89 ±0.01 (人)この化合物の面指数(h
kl)、面間隔(d(人))。
89 ±0.01 (人)この化合物の面指数(h
kl)、面間隔(d(人))。
(a、は実測値1dCは計算値を示す)及びX線に対す
る相対反射強度(1%)を示すと、表−2の通りである
。
る相対反射強度(1%)を示すと、表−2の通りである
。
この化合物は光機能材料、半導体材料、触媒材料等に有
用なものである。
用なものである。
この化合物は次の方法によって製造し得られる。
金属インジウムあるいは酸化インジウムもしくは加熱に
より酸化インジウムに分解される化合物と、金属ガリウ
ムあるいは酸化ガリウムもしくは加熱により酸化ガリウ
ムに分解される化合物と、金属亜鉛あるいは酸化亜鉛も
しくは加熱により酸化亜鉛に分解される化合物とを、I
n、 GaおよびZnの割合が原子比で1対1対4の割
合で混合し、該混合物を800℃以上の温度で、大気中
、酸化性雰囲気中あるいはInおよびGaが各々3価イ
オン状態、Znが2価イオン状態より還元されない還元
雰囲気中で加熱することによって製造し得られる。
より酸化インジウムに分解される化合物と、金属ガリウ
ムあるいは酸化ガリウムもしくは加熱により酸化ガリウ
ムに分解される化合物と、金属亜鉛あるいは酸化亜鉛も
しくは加熱により酸化亜鉛に分解される化合物とを、I
n、 GaおよびZnの割合が原子比で1対1対4の割
合で混合し、該混合物を800℃以上の温度で、大気中
、酸化性雰囲気中あるいはInおよびGaが各々3価イ
オン状態、Znが2価イオン状態より還元されない還元
雰囲気中で加熱することによって製造し得られる。
本発明に用いる出発物質は市販のものをそのまま使用し
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよく、特に10μI以下であることが好
ましい。
てもよいが、化学反応を速やかに進行させるためには粒
径が小さい方がよく、特に10μI以下であることが好
ましい。
また光機能材料、半導体材料として用いる場合には不純
物の混入をきらうので、純度の高いことが好ましい、出
発物質が加熱により金属酸化物を得る化合物としては、
それぞれの金属の水酸化物。
物の混入をきらうので、純度の高いことが好ましい、出
発物質が加熱により金属酸化物を得る化合物としては、
それぞれの金属の水酸化物。
炭酸塩、硝酸塩等が挙げられる。
原料はそのまま、あるいはアルコール類、アセトン等と
共に充分に混合する。
共に充分に混合する。
原料の混合割合は、In、 GaおよびZnの割合が原
子比で1対1対4の割合であることが必要である。
子比で1対1対4の割合であることが必要である。
これをはずすと目的とする化合物の単−相を得る 、こ
とができない。
とができない。
この混合物を大気中、酸化性雰囲気中あるいはInおよ
びGaが各々3価イオン状態、 Znが2価イオン状態
から還元されない還元雰囲気中で800℃以上のもとで
加熱する。加熱時間は数時間もしくはそれ以上である。
びGaが各々3価イオン状態、 Znが2価イオン状態
から還元されない還元雰囲気中で800℃以上のもとで
加熱する。加熱時間は数時間もしくはそれ以上である。
加熱の際の昇温速度には制約はない。加熱終了後急冷す
るか、あるいは大気中に急激に引き出せばよい。
るか、あるいは大気中に急激に引き出せばよい。
得られたInGaZn、(1,化合物の粉末は無色であ
り、粉末X線回折法によって結晶構造を有することが分
かった。その結晶構造は層状構造であり、InO+、s
層J (Ga + Zn) Ot、s層およびZnO層
の積み重ねによって形成されていることが分かった。
り、粉末X線回折法によって結晶構造を有することが分
かった。その結晶構造は層状構造であり、InO+、s
層J (Ga + Zn) Ot、s層およびZnO層
の積み重ねによって形成されていることが分かった。
実施例
純度99.99%以上の酸化インジウム(IntOs)
粉末、純度99.99%以上の酸化ガリウム(Ga、0
.)粉末および試薬特級の酸化亜鉛(ZnO)粉末をモ
ル比で1対1対8の割合に秤量し、めのう乳鉢内でエタ
ノールを加えて、約30分間部合し、平均粒径数μ−の
微粉末混合物を得た。該混合物を白金管内に封入し、1
450℃に設定された管状シリコニット炉内に入れ4日
間加熱し、その後、試料を炉外にとりだし室温まで急速
に冷却した。得られた試料はInGaZnaOt単−相
であった。粉末X線回折法によって面指数(hkl)、
面間隔(do)および相対反射強度(1%)を測定した
。その結果は表−2の通りであった。
粉末、純度99.99%以上の酸化ガリウム(Ga、0
.)粉末および試薬特級の酸化亜鉛(ZnO)粉末をモ
ル比で1対1対8の割合に秤量し、めのう乳鉢内でエタ
ノールを加えて、約30分間部合し、平均粒径数μ−の
微粉末混合物を得た。該混合物を白金管内に封入し、1
450℃に設定された管状シリコニット炉内に入れ4日
間加熱し、その後、試料を炉外にとりだし室温まで急速
に冷却した。得られた試料はInGaZnaOt単−相
であった。粉末X線回折法によって面指数(hkl)、
面間隔(do)および相対反射強度(1%)を測定した
。その結果は表−2の通りであった。
六方晶系としての格子定数は
a =3.284 ±0.001 (人)c =32
.89 ±0.01 (人)であった。
.89 ±0.01 (人)であった。
上記の格子定数および表−2の面指数(h k l)よ
り算出した面間隔(dc(人))は、実測の面間隔(d
o(人))と極めてよく一致した。
り算出した面間隔(dc(人))は、実測の面間隔(d
o(人))と極めてよく一致した。
発明の効果
本発明は光機能材料、半導体材料及び触媒として有用な
新規化合物を提供 、″ する。
新規化合物を提供 、″ する。
特許出願人 科学技術庁無機材質研究所長潮 高
信 雄
信 雄
Claims (2)
- (1)InGaZn_4O_7で示される六方晶系の層
状構造を有する化合物。 - (2)金属インジウムあるいは酸化インジウムもしくは
加熱により酸化インジウムに分解される化合物と、金属
ガリウムあるいは酸化ガリウムもしくは加熱により酸化
ガリウムに分解される化合物と、金属亜鉛あるいは酸化
亜鉛もしくは加熱により酸化亜鉛に分解される化合物と
を、In、GaおよびZnの割合が原子比で1対1対4
の割合で混合し、該混合物を800℃以上の温度で、大
気中、酸化性雰囲気中あるいはInおよびGaが各々3
価イオン状態、Znが2価イオン状態より還元されない
還元雰囲気中で加熱することを特徴とするInGaZn
_4O_7で示される六方晶系の層状構造を有する化合
物の製造法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4115287A JPS63210023A (ja) | 1987-02-24 | 1987-02-24 | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4115287A JPS63210023A (ja) | 1987-02-24 | 1987-02-24 | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63210023A true JPS63210023A (ja) | 1988-08-31 |
JPH0244259B2 JPH0244259B2 (ja) | 1990-10-03 |
Family
ID=12600446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4115287A Granted JPS63210023A (ja) | 1987-02-24 | 1987-02-24 | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63210023A (ja) |
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JP2018177621A (ja) * | 2017-04-21 | 2018-11-15 | 学校法人東京理科大学 | 酸化物半導体単結晶及びその製造方法、透明導電性材料、並びに透明導電性基板 |
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