JP3276930B2
(ja)
*
|
1998-11-17 |
2002-04-22 |
科学技術振興事業団 |
トランジスタ及び半導体装置
|
US6998656B2
(en)
*
|
2003-02-07 |
2006-02-14 |
Hewlett-Packard Development Company, L.P. |
Transparent double-injection field-effect transistor
|
JP4090716B2
(ja)
|
2001-09-10 |
2008-05-28 |
雅司 川崎 |
薄膜トランジスタおよびマトリクス表示装置
|
JP4164562B2
(ja)
|
2002-09-11 |
2008-10-15 |
独立行政法人科学技術振興機構 |
ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
|
US6874645B2
(en)
*
|
2002-02-15 |
2005-04-05 |
David Lee Broderick |
Media disc storage and display device
|
US7339187B2
(en)
*
|
2002-05-21 |
2008-03-04 |
State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University |
Transistor structures
|
US7189992B2
(en)
*
|
2002-05-21 |
2007-03-13 |
State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University |
Transistor structures having a transparent channel
|
JP2004014982A
(ja)
*
|
2002-06-11 |
2004-01-15 |
Konica Minolta Holdings Inc |
半導体回路および画像表示装置
|
US7250930B2
(en)
|
2003-02-07 |
2007-07-31 |
Hewlett-Packard Development Company, L.P. |
Transparent active-matrix display
|
US7235920B2
(en)
|
2003-02-24 |
2007-06-26 |
Osram Opto Semiconductors Gmbh |
Display device and method of its manufacture
|
JP4271475B2
(ja)
*
|
2003-03-31 |
2009-06-03 |
株式会社ワコー |
力検出装置
|
US7262463B2
(en)
*
|
2003-07-25 |
2007-08-28 |
Hewlett-Packard Development Company, L.P. |
Transistor including a deposited channel region having a doped portion
|
US20050017244A1
(en)
*
|
2003-07-25 |
2005-01-27 |
Randy Hoffman |
Semiconductor device
|
TWI221341B
(en)
*
|
2003-09-18 |
2004-09-21 |
Ind Tech Res Inst |
Method and material for forming active layer of thin film transistor
|
US7026713B2
(en)
*
|
2003-12-17 |
2006-04-11 |
Hewlett-Packard Development Company, L.P. |
Transistor device having a delafossite material
|
US7250627B2
(en)
|
2004-03-12 |
2007-07-31 |
Hewlett-Packard Development Company, L.P. |
Semiconductor device
|
US7297977B2
(en)
*
|
2004-03-12 |
2007-11-20 |
Hewlett-Packard Development Company, L.P. |
Semiconductor device
|
US7242039B2
(en)
*
|
2004-03-12 |
2007-07-10 |
Hewlett-Packard Development Company, L.P. |
Semiconductor device
|
CN102354658B
(zh)
*
|
2004-03-12 |
2015-04-01 |
独立行政法人科学技术振兴机构 |
薄膜晶体管的制造方法
|
US7282782B2
(en)
*
|
2004-03-12 |
2007-10-16 |
Hewlett-Packard Development Company, L.P. |
Combined binary oxide semiconductor device
|
US7145174B2
(en)
*
|
2004-03-12 |
2006-12-05 |
Hewlett-Packard Development Company, Lp. |
Semiconductor device
|
US8314420B2
(en)
*
|
2004-03-12 |
2012-11-20 |
Hewlett-Packard Development Company, L.P. |
Semiconductor device with multiple component oxide channel
|
US7642573B2
(en)
*
|
2004-03-12 |
2010-01-05 |
Hewlett-Packard Development Company, L.P. |
Semiconductor device
|
US20060003485A1
(en)
*
|
2004-06-30 |
2006-01-05 |
Hoffman Randy L |
Devices and methods of making the same
|
US7427776B2
(en)
*
|
2004-10-07 |
2008-09-23 |
Hewlett-Packard Development Company, L.P. |
Thin-film transistor and methods
|
US7382421B2
(en)
*
|
2004-10-12 |
2008-06-03 |
Hewlett-Packard Development Company, L.P. |
Thin film transistor with a passivation layer
|
US7265003B2
(en)
*
|
2004-10-22 |
2007-09-04 |
Hewlett-Packard Development Company, L.P. |
Method of forming a transistor having a dual layer dielectric
|
US7309895B2
(en)
*
|
2005-01-25 |
2007-12-18 |
Hewlett-Packard Development Company, L.P. |
Semiconductor device
|
TWI569441B
(zh)
|
2005-01-28 |
2017-02-01 |
半導體能源研究所股份有限公司 |
半導體裝置,電子裝置,和半導體裝置的製造方法
|
TWI505473B
(zh)
*
|
2005-01-28 |
2015-10-21 |
Semiconductor Energy Lab |
半導體裝置,電子裝置,和半導體裝置的製造方法
|
US7858451B2
(en)
*
|
2005-02-03 |
2010-12-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Electronic device, semiconductor device and manufacturing method thereof
|
JP2006245031A
(ja)
*
|
2005-02-28 |
2006-09-14 |
Casio Comput Co Ltd |
薄膜トランジスタパネル
|
JP5117667B2
(ja)
|
2005-02-28 |
2013-01-16 |
カシオ計算機株式会社 |
薄膜トランジスタパネル
|
US7928938B2
(en)
|
2005-04-19 |
2011-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including memory circuit, display device and electronic apparatus
|
US8059109B2
(en)
*
|
2005-05-20 |
2011-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic apparatus
|
JP4687259B2
(ja)
*
|
2005-06-10 |
2011-05-25 |
カシオ計算機株式会社 |
液晶表示装置
|
US8629819B2
(en)
|
2005-07-14 |
2014-01-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
EP1758072A3
(de)
*
|
2005-08-24 |
2007-05-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Anzeigevorrichtung und ihr Steuerungsverfahren
|
JPWO2007023612A1
(ja)
*
|
2005-08-26 |
2009-02-26 |
コニカミノルタホールディングス株式会社 |
薄膜トランジスタ
|
JP4560502B2
(ja)
*
|
2005-09-06 |
2010-10-13 |
キヤノン株式会社 |
電界効果型トランジスタ
|
JP5006598B2
(ja)
*
|
2005-09-16 |
2012-08-22 |
キヤノン株式会社 |
電界効果型トランジスタ
|
US7712009B2
(en)
|
2005-09-21 |
2010-05-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
|
WO2007043493A1
(en)
|
2005-10-14 |
2007-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
KR20060080134A
(ko)
*
|
2006-02-28 |
2006-07-07 |
안도열 |
실리콘 전자구조의 계곡축퇴를 이용한 양자비트 구현방법
|
EP2924498A1
(de)
|
2006-04-06 |
2015-09-30 |
Semiconductor Energy Laboratory Co, Ltd. |
Flüssigkristallanzeige, Halbleitervorrichtung und elektronisches Gerät
|
US7646015B2
(en)
*
|
2006-10-31 |
2010-01-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device and semiconductor device
|
US8275080B2
(en)
*
|
2006-11-17 |
2012-09-25 |
Comtech Mobile Datacom Corporation |
Self-supporting simplex packets
|
WO2008117739A1
(ja)
|
2007-03-23 |
2008-10-02 |
Idemitsu Kosan Co., Ltd. |
半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
|
JP5244331B2
(ja)
|
2007-03-26 |
2013-07-24 |
出光興産株式会社 |
非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
|
JP5542297B2
(ja)
|
2007-05-17 |
2014-07-09 |
株式会社半導体エネルギー研究所 |
液晶表示装置、表示モジュール及び電子機器
|
JP4989309B2
(ja)
|
2007-05-18 |
2012-08-01 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
US8354674B2
(en)
*
|
2007-06-29 |
2013-01-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
|
KR101072379B1
(ko)
*
|
2007-07-20 |
2011-10-11 |
엘지디스플레이 주식회사 |
리프트오프 방법 및 이를 이용한 액정표시장치용 어레이기판의 제조방법
|
WO2009014155A1
(en)
|
2007-07-25 |
2009-01-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Photoelectric conversion device and electronic device having the same
|
KR20090040158A
(ko)
*
|
2007-10-19 |
2009-04-23 |
삼성전자주식회사 |
투명한 트랜지스터를 구비한 시모스 이미지 센서
|
NO332409B1
(no)
*
|
2008-01-24 |
2012-09-17 |
Well Technology As |
Anordning og fremgangsmate for a isolere en seksjon av et bronnhull
|
DE112009000012B4
(de)
*
|
2008-03-13 |
2014-11-13 |
Murata Manufacturing Co., Ltd. |
Glaskeramikzusammensetzung, Glaskeramik-Sinterkörper und keramisches Mehrschicht-Elektronikbauteil
|
US8247315B2
(en)
|
2008-03-17 |
2012-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Plasma processing apparatus and method for manufacturing semiconductor device
|
US9041202B2
(en)
|
2008-05-16 |
2015-05-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of the same
|
TWI397130B
(zh)
*
|
2008-06-10 |
2013-05-21 |
Chunghwa Picture Tubes Ltd |
畫素結構的製作方法以及畫素結構
|
US8314765B2
(en)
|
2008-06-17 |
2012-11-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit, display device, and electronic device
|
KR102112799B1
(ko)
|
2008-07-10 |
2020-05-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광장치 및 전자기기
|
TWI413260B
(zh)
*
|
2008-07-31 |
2013-10-21 |
Semiconductor Energy Lab |
半導體裝置及其製造方法
|
TWI500159B
(zh)
|
2008-07-31 |
2015-09-11 |
Semiconductor Energy Lab |
半導體裝置和其製造方法
|
TWI627757B
(zh)
|
2008-07-31 |
2018-06-21 |
半導體能源研究所股份有限公司 |
半導體裝置
|
JP2010056541A
(ja)
|
2008-07-31 |
2010-03-11 |
Semiconductor Energy Lab Co Ltd |
半導体装置およびその作製方法
|
JP5616038B2
(ja)
|
2008-07-31 |
2014-10-29 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP5608347B2
(ja)
|
2008-08-08 |
2014-10-15 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の作製方法
|
TWI508282B
(zh)
|
2008-08-08 |
2015-11-11 |
Semiconductor Energy Lab |
半導體裝置及其製造方法
|
JP5480554B2
(ja)
*
|
2008-08-08 |
2014-04-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
TWI637444B
(zh)
|
2008-08-08 |
2018-10-01 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
JP5525778B2
(ja)
*
|
2008-08-08 |
2014-06-18 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP5627071B2
(ja)
|
2008-09-01 |
2014-11-19 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US9082857B2
(en)
|
2008-09-01 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising an oxide semiconductor layer
|
TWI569454B
(zh)
|
2008-09-01 |
2017-02-01 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
WO2010029865A1
(en)
|
2008-09-12 |
2010-03-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
KR101623224B1
(ko)
|
2008-09-12 |
2016-05-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제조 방법
|
KR101657957B1
(ko)
|
2008-09-12 |
2016-09-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
KR101665734B1
(ko)
*
|
2008-09-12 |
2016-10-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 생산 방법
|
WO2010032638A1
(en)
|
2008-09-19 |
2010-03-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
KR101911386B1
(ko)
*
|
2008-09-19 |
2018-12-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시장치
|
CN102881696A
(zh)
|
2008-09-19 |
2013-01-16 |
株式会社半导体能源研究所 |
显示装置
|
KR101563527B1
(ko)
|
2008-09-19 |
2015-10-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치
|
EP2421030B1
(de)
|
2008-09-19 |
2020-10-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Anzeigevorrichtung
|
WO2010038599A1
(en)
|
2008-10-01 |
2010-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
EP2172977A1
(de)
|
2008-10-03 |
2010-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Anzeigevorrichtung
|
CN103928476A
(zh)
|
2008-10-03 |
2014-07-16 |
株式会社半导体能源研究所 |
显示装置及其制造方法
|
WO2010038819A1
(en)
|
2008-10-03 |
2010-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
EP2172804B1
(de)
|
2008-10-03 |
2016-05-11 |
Semiconductor Energy Laboratory Co, Ltd. |
Anzeigevorrichtung
|
WO2010038820A1
(en)
|
2008-10-03 |
2010-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
CN101719493B
(zh)
|
2008-10-08 |
2014-05-14 |
株式会社半导体能源研究所 |
显示装置
|
JP5484853B2
(ja)
|
2008-10-10 |
2014-05-07 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
KR101799601B1
(ko)
*
|
2008-10-16 |
2017-11-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광 표시 장치
|
JP5361651B2
(ja)
|
2008-10-22 |
2013-12-04 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US8741702B2
(en)
|
2008-10-24 |
2014-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US8106400B2
(en)
|
2008-10-24 |
2012-01-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR102251817B1
(ko)
|
2008-10-24 |
2021-05-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
KR101667909B1
(ko)
*
|
2008-10-24 |
2016-10-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치의 제조방법
|
JP5616012B2
(ja)
|
2008-10-24 |
2014-10-29 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
EP2180518B1
(de)
|
2008-10-24 |
2018-04-25 |
Semiconductor Energy Laboratory Co, Ltd. |
Herstellungsverfahren für Halbleitervorrichtung
|
WO2010047288A1
(en)
*
|
2008-10-24 |
2010-04-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductordevice
|
JP5442234B2
(ja)
|
2008-10-24 |
2014-03-12 |
株式会社半導体エネルギー研究所 |
半導体装置及び表示装置
|
KR101631454B1
(ko)
*
|
2008-10-31 |
2016-06-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
논리회로
|
TWI633605B
(zh)
|
2008-10-31 |
2018-08-21 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
WO2010050419A1
(en)
|
2008-10-31 |
2010-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit and display device
|
KR101603303B1
(ko)
|
2008-10-31 |
2016-03-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
도전성 산질화물 및 도전성 산질화물막의 제작 방법
|
CN103730509B
(zh)
|
2008-11-07 |
2018-03-30 |
株式会社半导体能源研究所 |
半导体器件
|
JP2010135771A
(ja)
|
2008-11-07 |
2010-06-17 |
Semiconductor Energy Lab Co Ltd |
半導体装置及び当該半導体装置の作製方法
|
EP2184783B1
(de)
*
|
2008-11-07 |
2012-10-03 |
Semiconductor Energy Laboratory Co, Ltd. |
Halbleiterbauelement und Verfahren zu seiner Herstellung
|
CN101740631B
(zh)
*
|
2008-11-07 |
2014-07-16 |
株式会社半导体能源研究所 |
半导体装置及该半导体装置的制造方法
|
TWI574423B
(zh)
|
2008-11-07 |
2017-03-11 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
TWI487104B
(zh)
*
|
2008-11-07 |
2015-06-01 |
Semiconductor Energy Lab |
半導體裝置和其製造方法
|
TWI656645B
(zh)
|
2008-11-13 |
2019-04-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
KR101432764B1
(ko)
*
|
2008-11-13 |
2014-08-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치의 제조방법
|
US8232947B2
(en)
|
2008-11-14 |
2012-07-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
JP2010153802A
(ja)
|
2008-11-20 |
2010-07-08 |
Semiconductor Energy Lab Co Ltd |
半導体装置及び半導体装置の作製方法
|
KR101671660B1
(ko)
|
2008-11-21 |
2016-11-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 표시 장치 및 전자 기기
|
TWI529949B
(zh)
|
2008-11-28 |
2016-04-11 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
TWI571684B
(zh)
|
2008-11-28 |
2017-02-21 |
半導體能源研究所股份有限公司 |
液晶顯示裝置
|
TWI585955B
(zh)
|
2008-11-28 |
2017-06-01 |
半導體能源研究所股份有限公司 |
光感測器及顯示裝置
|
WO2010064590A1
(en)
*
|
2008-12-01 |
2010-06-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
TWI613489B
(zh)
|
2008-12-03 |
2018-02-01 |
半導體能源研究所股份有限公司 |
液晶顯示裝置
|
JP5491833B2
(ja)
|
2008-12-05 |
2014-05-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP5615540B2
(ja)
|
2008-12-19 |
2014-10-29 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
CN103456794B
(zh)
*
|
2008-12-19 |
2016-08-10 |
株式会社半导体能源研究所 |
晶体管的制造方法
|
EP2202802B1
(de)
|
2008-12-24 |
2012-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Treiberschaltung und Halbleiterbauelement
|
US8383470B2
(en)
*
|
2008-12-25 |
2013-02-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor (TFT) having a protective layer and manufacturing method thereof
|
US8441007B2
(en)
|
2008-12-25 |
2013-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and manufacturing method thereof
|
US8114720B2
(en)
|
2008-12-25 |
2012-02-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
TWI654689B
(zh)
|
2008-12-26 |
2019-03-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
JP5590877B2
(ja)
|
2008-12-26 |
2014-09-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
KR101648927B1
(ko)
*
|
2009-01-16 |
2016-08-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
US8492756B2
(en)
|
2009-01-23 |
2013-07-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US8436350B2
(en)
|
2009-01-30 |
2013-05-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device using an oxide semiconductor with a plurality of metal clusters
|
US8367486B2
(en)
|
2009-02-05 |
2013-02-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and method for manufacturing the transistor
|
US8174021B2
(en)
|
2009-02-06 |
2012-05-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing the semiconductor device
|
US8749930B2
(en)
*
|
2009-02-09 |
2014-06-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
|
US8247812B2
(en)
|
2009-02-13 |
2012-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
|
CN101840936B
(zh)
*
|
2009-02-13 |
2014-10-08 |
株式会社半导体能源研究所 |
包括晶体管的半导体装置及其制造方法
|
US8278657B2
(en)
*
|
2009-02-13 |
2012-10-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
|
US8247276B2
(en)
|
2009-02-20 |
2012-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor, method for manufacturing the same, and semiconductor device
|
US8841661B2
(en)
|
2009-02-25 |
2014-09-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
|
US8704216B2
(en)
|
2009-02-27 |
2014-04-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US20100224880A1
(en)
*
|
2009-03-05 |
2010-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US20100224878A1
(en)
|
2009-03-05 |
2010-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8461582B2
(en)
*
|
2009-03-05 |
2013-06-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
JP5504008B2
(ja)
|
2009-03-06 |
2014-05-28 |
株式会社半導体エネルギー研究所 |
半導体装置
|
KR102342672B1
(ko)
|
2009-03-12 |
2021-12-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
TWI556323B
(zh)
|
2009-03-13 |
2016-11-01 |
半導體能源研究所股份有限公司 |
半導體裝置及該半導體裝置的製造方法
|
US8450144B2
(en)
|
2009-03-26 |
2013-05-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR101752640B1
(ko)
|
2009-03-27 |
2017-06-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치
|
KR101681884B1
(ko)
|
2009-03-27 |
2016-12-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치, 표시장치 및 전자기기
|
TWI617029B
(zh)
|
2009-03-27 |
2018-03-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
TWI485851B
(zh)
|
2009-03-30 |
2015-05-21 |
Semiconductor Energy Lab |
半導體裝置及其製造方法
|
US8338226B2
(en)
|
2009-04-02 |
2012-12-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
TWI489628B
(zh)
*
|
2009-04-02 |
2015-06-21 |
Semiconductor Energy Lab |
半導體裝置和其製造方法
|
US8441047B2
(en)
|
2009-04-10 |
2013-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
TWI535023B
(zh)
|
2009-04-16 |
2016-05-21 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
WO2010125986A1
(en)
*
|
2009-05-01 |
2010-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
JP5751762B2
(ja)
|
2009-05-21 |
2015-07-22 |
株式会社半導体エネルギー研究所 |
半導体装置
|
EP2256814B1
(de)
|
2009-05-29 |
2019-01-16 |
Semiconductor Energy Laboratory Co, Ltd. |
Oxid-Halbleiterbauelement und Verfahren zu seiner Herstellung
|
JP5564331B2
(ja)
|
2009-05-29 |
2014-07-30 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
EP2256795B1
(de)
|
2009-05-29 |
2014-11-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Herstellungsverfahren für Oxidhalbleiterbauelement
|
EP2449594B1
(de)
|
2009-06-30 |
2019-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Herstellungsverfahren für halbleiterbauelement
|
WO2011002046A1
(en)
|
2009-06-30 |
2011-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
KR101968855B1
(ko)
*
|
2009-06-30 |
2019-04-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제조 방법
|
KR101604577B1
(ko)
|
2009-06-30 |
2016-03-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제조 방법
|
US20110000175A1
(en)
*
|
2009-07-01 |
2011-01-06 |
Husqvarna Consumer Outdoor Products N.A. Inc. |
Variable speed controller
|
KR20170119742A
(ko)
|
2009-07-03 |
2017-10-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
JP5663214B2
(ja)
*
|
2009-07-03 |
2015-02-04 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
KR101476817B1
(ko)
|
2009-07-03 |
2014-12-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터를 갖는 표시 장치 및 그 제작 방법
|
SG10201403913PA
(en)
|
2009-07-10 |
2014-10-30 |
Semiconductor Energy Lab |
Method for manufacturing semiconductor device
|
WO2011004723A1
(en)
|
2009-07-10 |
2011-01-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method the same
|
KR101422362B1
(ko)
|
2009-07-10 |
2014-07-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치, 표시 패널 및 전자 기기
|
WO2011007682A1
(en)
|
2009-07-17 |
2011-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
WO2011007677A1
(en)
*
|
2009-07-17 |
2011-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR101739154B1
(ko)
*
|
2009-07-17 |
2017-05-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
WO2011010541A1
(en)
|
2009-07-18 |
2011-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR20180112107A
(ko)
|
2009-07-18 |
2018-10-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치 제조 방법
|
KR101768786B1
(ko)
|
2009-07-18 |
2017-08-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제조 방법
|
WO2011010545A1
(en)
|
2009-07-18 |
2011-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
WO2011010542A1
(en)
*
|
2009-07-23 |
2011-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
WO2011010546A1
(en)
|
2009-07-24 |
2011-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011013523A1
(en)
|
2009-07-31 |
2011-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
WO2011013502A1
(en)
*
|
2009-07-31 |
2011-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
CN102473734B
(zh)
|
2009-07-31 |
2015-08-12 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
KR20190141791A
(ko)
|
2009-07-31 |
2019-12-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
KR102526493B1
(ko)
|
2009-07-31 |
2023-04-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 디바이스 및 그 형성 방법
|
TWI634642B
(zh)
|
2009-08-07 |
2018-09-01 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
TWI582951B
(zh)
*
|
2009-08-07 |
2017-05-11 |
半導體能源研究所股份有限公司 |
半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
|
JP5642447B2
(ja)
|
2009-08-07 |
2014-12-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
TWI830077B
(zh)
|
2009-08-07 |
2024-01-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
EP2284891B1
(de)
|
2009-08-07 |
2019-07-24 |
Semiconductor Energy Laboratory Co, Ltd. |
Halbleiterbauelement und dessen Herstellungsverfahren
|
JP5663231B2
(ja)
*
|
2009-08-07 |
2015-02-04 |
株式会社半導体エネルギー研究所 |
発光装置
|
TWI596741B
(zh)
|
2009-08-07 |
2017-08-21 |
半導體能源研究所股份有限公司 |
半導體裝置和其製造方法
|
US8115883B2
(en)
|
2009-08-27 |
2012-02-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and method for manufacturing the same
|
WO2011027649A1
(en)
|
2009-09-02 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including a transistor, and manufacturing method of semiconductor device
|
US9805641B2
(en)
|
2009-09-04 |
2017-10-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device including the same
|
WO2011027701A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device and method for manufacturing the same
|
CN102484140B
(zh)
|
2009-09-04 |
2015-04-22 |
株式会社半导体能源研究所 |
半导体器件的制造方法
|
KR101746198B1
(ko)
|
2009-09-04 |
2017-06-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시장치 및 전자기기
|
WO2011027656A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and display device
|
WO2011027676A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
KR101707433B1
(ko)
|
2009-09-04 |
2017-02-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광 장치 및 발광 장치를 제작하기 위한 방법
|
WO2011027702A1
(en)
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device and method for manufacturing the same
|
WO2011027664A1
(en)
*
|
2009-09-04 |
2011-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and method for manufacturing the same
|
CN105810753A
(zh)
|
2009-09-04 |
2016-07-27 |
株式会社半导体能源研究所 |
半导体器件及其制造方法
|
EP2478563B1
(de)
*
|
2009-09-16 |
2021-04-07 |
Semiconductor Energy Laboratory Co, Ltd. |
Herstellungsverfahren für halbleiterbauelement
|
US9715845B2
(en)
|
2009-09-16 |
2017-07-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor display device
|
WO2011034012A1
(en)
*
|
2009-09-16 |
2011-03-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit, light emitting device, semiconductor device, and electronic device
|
KR102480780B1
(ko)
|
2009-09-16 |
2022-12-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광 장치 및 이의 제조 방법
|
KR102246529B1
(ko)
|
2009-09-16 |
2021-04-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
EP2544237B1
(de)
|
2009-09-16 |
2017-05-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor und Anzeigevorrichtung
|
WO2011033914A1
(en)
|
2009-09-16 |
2011-03-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of display device and display device
|
KR101700470B1
(ko)
*
|
2009-09-16 |
2017-01-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
구동 회로, 구동 회로를 포함하는 표시 장치 및 표시 장치를 포함하는 전자 기기
|
KR102054650B1
(ko)
|
2009-09-24 |
2019-12-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막 및 반도체 장치
|
WO2011037008A1
(en)
*
|
2009-09-24 |
2011-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
|
KR101740943B1
(ko)
|
2009-09-24 |
2017-06-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
CN102576677B
(zh)
|
2009-09-24 |
2015-07-22 |
株式会社半导体能源研究所 |
半导体元件及其制造方法
|
TWI512997B
(zh)
|
2009-09-24 |
2015-12-11 |
Semiconductor Energy Lab |
半導體裝置,電源電路,和半導體裝置的製造方法
|
KR20180094132A
(ko)
|
2009-09-24 |
2018-08-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
구동 회로, 상기 구동 회로를 포함하는 표시 장치, 및 상기 표시 장치를 포함하는 전자 기기
|
KR101707260B1
(ko)
|
2009-09-24 |
2017-02-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101470785B1
(ko)
|
2009-09-24 |
2014-12-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제조 방법
|
CN105161543A
(zh)
*
|
2009-09-24 |
2015-12-16 |
株式会社半导体能源研究所 |
半导体器件及其制造方法
|
JP5613508B2
(ja)
|
2009-09-30 |
2014-10-22 |
株式会社半導体エネルギー研究所 |
レドックスキャパシタ
|
WO2011040213A1
(en)
|
2009-10-01 |
2011-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
WO2011043182A1
(en)
|
2009-10-05 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for removing electricity and method for manufacturing semiconductor device
|
KR20120084751A
(ko)
|
2009-10-05 |
2012-07-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
KR101991006B1
(ko)
|
2009-10-08 |
2019-06-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101623619B1
(ko)
*
|
2009-10-08 |
2016-05-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체층 및 반도체 장치
|
KR101820973B1
(ko)
|
2009-10-09 |
2018-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치 제조 방법
|
WO2011043206A1
(en)
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
CN102576737B
(zh)
|
2009-10-09 |
2015-10-21 |
株式会社半导体能源研究所 |
半导体器件及其制造方法
|
WO2011043215A1
(en)
*
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Shift register and display device and driving method thereof
|
WO2011043164A1
(en)
*
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the semiconductor device
|
KR101949670B1
(ko)
|
2009-10-09 |
2019-02-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
CN102549638B
(zh)
|
2009-10-09 |
2015-04-01 |
株式会社半导体能源研究所 |
发光显示器件以及包括该发光显示器件的电子设备
|
US9171640B2
(en)
|
2009-10-09 |
2015-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Shift register and display device
|
KR20120083341A
(ko)
*
|
2009-10-09 |
2012-07-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 액정 표시 장치를 포함하는 전자 기기
|
WO2011043194A1
(en)
|
2009-10-09 |
2011-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
EP2486595B1
(de)
|
2009-10-09 |
2019-10-23 |
Semiconductor Energy Laboratory Co. Ltd. |
Halbleiterbauelement
|
KR101680047B1
(ko)
|
2009-10-14 |
2016-11-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
KR101772639B1
(ko)
|
2009-10-16 |
2017-08-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR102290831B1
(ko)
|
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2021-08-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 이를 구비한 전자 장치
|
KR101962603B1
(ko)
|
2009-10-16 |
2019-03-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
|
KR102689629B1
(ko)
|
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2024-07-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101745747B1
(ko)
|
2009-10-16 |
2017-06-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
논리 회로 및 반도체 장치
|
KR102162746B1
(ko)
|
2009-10-21 |
2020-10-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
아날로그 회로 및 반도체 장치
|
WO2011048923A1
(en)
|
2009-10-21 |
2011-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
E-book reader
|
KR101801959B1
(ko)
|
2009-10-21 |
2017-11-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 그 액정 표시 장치를 구비하는 전자기기
|
EP2491586B1
(de)
|
2009-10-21 |
2019-11-20 |
Semiconductor Energy Laboratory Co. Ltd. |
Halbleiterbauelement
|
CN112447130A
(zh)
|
2009-10-21 |
2021-03-05 |
株式会社半导体能源研究所 |
显示装置和包括显示装置的电子设备
|
KR101847656B1
(ko)
*
|
2009-10-21 |
2018-05-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
KR101402294B1
(ko)
|
2009-10-21 |
2014-06-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제작방법
|
JP5730529B2
(ja)
|
2009-10-21 |
2015-06-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
WO2011048929A1
(en)
|
2009-10-21 |
2011-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011052396A1
(en)
|
2009-10-29 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
EP2494594B1
(de)
|
2009-10-29 |
2020-02-19 |
Semiconductor Energy Laboratory Co. Ltd. |
Halbleiterbauelement
|
KR101293262B1
(ko)
|
2009-10-30 |
2013-08-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011052382A1
(en)
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR101788521B1
(ko)
|
2009-10-30 |
2017-10-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011052366A1
(en)
*
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Voltage regulator circuit
|
EP2494601A4
(de)
*
|
2009-10-30 |
2016-09-07 |
Semiconductor Energy Lab |
Halbleiterbauelement und herstellungsverfahren dafür
|
WO2011052409A1
(en)
*
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor
|
KR101740684B1
(ko)
|
2009-10-30 |
2017-05-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
파워 다이오드, 정류기 및 그것을 가지는 반도체 장치
|
WO2011052437A1
(en)
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Non-linear element, display device including non-linear element, and electronic device including display device
|
KR101837102B1
(ko)
|
2009-10-30 |
2018-03-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
SG188112A1
(en)
|
2009-10-30 |
2013-03-28 |
Semiconductor Energy Lab |
Logic circuit and semiconductor device
|
WO2011052411A1
(en)
*
|
2009-10-30 |
2011-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor
|
CN102484471B
(zh)
*
|
2009-10-30 |
2015-04-01 |
株式会社半导体能源研究所 |
驱动器电路、包括该驱动器电路的显示设备和包括该显示设备的电子设备
|
CN102576172B
(zh)
|
2009-10-30 |
2016-01-27 |
株式会社半导体能源研究所 |
液晶显示设备、其驱动方法以及包括该液晶显示设备的电子电器
|
KR101796909B1
(ko)
|
2009-10-30 |
2017-12-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
비선형 소자, 표시 장치, 및 전자 기기
|
CN104465318B
(zh)
|
2009-11-06 |
2018-04-24 |
株式会社半导体能源研究所 |
制造半导体器件的方法
|
KR101605984B1
(ko)
|
2009-11-06 |
2016-03-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011055668A1
(en)
*
|
2009-11-06 |
2011-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR102148664B1
(ko)
*
|
2009-11-06 |
2020-08-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
WO2011055769A1
(en)
*
|
2009-11-06 |
2011-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
|
EP2497115A4
(de)
|
2009-11-06 |
2015-09-02 |
Semiconductor Energy Lab |
Halbleiterbauelement und herstellungsverfahren dafür
|
KR101747158B1
(ko)
|
2009-11-06 |
2017-06-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치를 제작하기 위한 방법
|
CN104600074A
(zh)
|
2009-11-06 |
2015-05-06 |
株式会社半导体能源研究所 |
半导体装置
|
KR101727469B1
(ko)
|
2009-11-06 |
2017-04-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
JP5539846B2
(ja)
|
2009-11-06 |
2014-07-02 |
株式会社半導体エネルギー研究所 |
評価方法、半導体装置の作製方法
|
WO2011055626A1
(en)
|
2009-11-06 |
2011-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011055660A1
(en)
|
2009-11-06 |
2011-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011058865A1
(en)
|
2009-11-13 |
2011-05-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor devi ce
|
KR20230174763A
(ko)
|
2009-11-13 |
2023-12-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 이 표시 장치를 구비한 전자 기기
|
KR101975741B1
(ko)
*
|
2009-11-13 |
2019-05-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
타깃 재료의 포장 방법 및 타깃의 장착 방법
|
KR101721850B1
(ko)
|
2009-11-13 |
2017-03-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101787353B1
(ko)
|
2009-11-13 |
2017-10-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011058864A1
(en)
*
|
2009-11-13 |
2011-05-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Device including nonvolatile memory element
|
KR20120094013A
(ko)
*
|
2009-11-13 |
2012-08-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
스퍼터링 타겟 및 그 제조방법, 및 트랜지스터
|
WO2011058867A1
(en)
*
|
2009-11-13 |
2011-05-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Sputtering target and method for manufacturing the same, and transistor
|
CN102612714B
(zh)
|
2009-11-13 |
2016-06-29 |
株式会社半导体能源研究所 |
半导体器件及其驱动方法
|
WO2011058913A1
(en)
|
2009-11-13 |
2011-05-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
WO2011062029A1
(en)
*
|
2009-11-18 |
2011-05-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
CN102668063B
(zh)
*
|
2009-11-20 |
2015-02-18 |
株式会社半导体能源研究所 |
半导体装置
|
KR102682982B1
(ko)
|
2009-11-20 |
2024-07-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011062057A1
(en)
|
2009-11-20 |
2011-05-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5762723B2
(ja)
|
2009-11-20 |
2015-08-12 |
株式会社半導体エネルギー研究所 |
変調回路及びそれを備えた半導体装置
|
KR101752212B1
(ko)
*
|
2009-11-20 |
2017-06-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101995704B1
(ko)
|
2009-11-20 |
2019-07-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
KR101700154B1
(ko)
|
2009-11-20 |
2017-01-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
래치 회로와 회로
|
KR101800854B1
(ko)
*
|
2009-11-20 |
2017-11-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터
|
KR20140074404A
(ko)
*
|
2009-11-20 |
2014-06-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터
|
KR101693914B1
(ko)
|
2009-11-20 |
2017-01-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011065183A1
(en)
*
|
2009-11-24 |
2011-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including memory cell
|
CN102640293B
(zh)
*
|
2009-11-27 |
2015-07-22 |
株式会社半导体能源研究所 |
半导体器件
|
KR101506304B1
(ko)
|
2009-11-27 |
2015-03-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작방법
|
WO2011065209A1
(en)
*
|
2009-11-27 |
2011-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Non-linear element, display device including non-linear element, and electronic device including display device
|
KR101911382B1
(ko)
*
|
2009-11-27 |
2018-10-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101329849B1
(ko)
|
2009-11-28 |
2013-11-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
WO2011065216A1
(en)
*
|
2009-11-28 |
2011-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
|
WO2011065210A1
(en)
*
|
2009-11-28 |
2011-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
|
KR101824124B1
(ko)
|
2009-11-28 |
2018-02-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
WO2011065230A1
(en)
|
2009-11-30 |
2011-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device, method for driving the same, and electronic device including the same
|
KR101943109B1
(ko)
|
2009-12-04 |
2019-01-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
WO2011068022A1
(en)
*
|
2009-12-04 |
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Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011068021A1
(en)
|
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Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
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(ko)
|
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|
JP5584103B2
(ja)
*
|
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2014-09-03 |
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|
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(ko)
|
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|
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(en)
*
|
2009-12-04 |
2011-06-09 |
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|
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(ko)
|
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2019-03-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
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(zh)
|
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2017-12-29 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
WO2011068028A1
(en)
*
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element, semiconductor device, and method for manufacturing the same
|
WO2011068106A1
(en)
*
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device including the same
|
JP2011139052A
(ja)
*
|
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2011-07-14 |
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|
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(en)
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Dc converter circuit and power supply circuit
|
KR101511076B1
(ko)
*
|
2009-12-08 |
2015-04-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
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(ko)
|
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2014-12-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
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(en)
|
2009-12-10 |
2011-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and driving method thereof
|
WO2011070901A1
(en)
|
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2011-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
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(ko)
|
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2017-09-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 논리 회로, 및 cpu
|
WO2011070929A1
(en)
|
2009-12-11 |
2011-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
JP5727204B2
(ja)
|
2009-12-11 |
2015-06-03 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
KR20170116239A
(ko)
|
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2017-10-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
전계 효과 트랜지스터
|
WO2011070928A1
(en)
|
2009-12-11 |
2011-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5185357B2
(ja)
|
2009-12-17 |
2013-04-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
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(ko)
|
2009-12-18 |
2020-01-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치의 구동 방법 및 표시 장치
|
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(ko)
|
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2017-08-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 그 구동 방법
|
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(zh)
|
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2015-04-08 |
株式会社半导体能源研究所 |
非易失性锁存电路和逻辑电路以及使用它们的半导体器件
|
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(ko)
|
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2017-08-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 제작 방법
|
WO2011074392A1
(en)
|
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2011-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR102275522B1
(ko)
*
|
2009-12-18 |
2021-07-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 전자 기기
|
US9057758B2
(en)
|
2009-12-18 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
|
KR101743620B1
(ko)
|
2009-12-18 |
2017-06-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
광 센서를 포함하는 표시 장치 및 그 구동 방법
|
WO2011074407A1
(en)
|
2009-12-18 |
2011-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
CN102652396B
(zh)
*
|
2009-12-23 |
2015-12-16 |
株式会社半导体能源研究所 |
半导体装置
|
WO2011077926A1
(en)
|
2009-12-24 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
WO2011077916A1
(en)
|
2009-12-24 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
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(ko)
|
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2024-10-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
메모리 장치, 반도체 장치, 및 전자 장치
|
WO2011077946A1
(en)
|
2009-12-25 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011077925A1
(en)
|
2009-12-25 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving liquid crystal display device
|
WO2011077966A1
(en)
|
2009-12-25 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US8441009B2
(en)
*
|
2009-12-25 |
2013-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
KR101781336B1
(ko)
|
2009-12-25 |
2017-09-25 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011077978A1
(en)
|
2009-12-25 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing display device
|
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(zh)
|
2009-12-28 |
2018-08-14 |
株式会社半导体能源研究所 |
存储器装置和半导体装置
|
CN104867984B
(zh)
|
2009-12-28 |
2018-11-06 |
株式会社半导体能源研究所 |
制造半导体装置的方法
|
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(ko)
|
2009-12-28 |
2017-06-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 전자 기기
|
EP2519969A4
(de)
|
2009-12-28 |
2016-07-06 |
Semiconductor Energy Lab |
Halbleiterbauelement
|
WO2011081041A1
(en)
|
2009-12-28 |
2011-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the semiconductor device
|
KR101842413B1
(ko)
*
|
2009-12-28 |
2018-03-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
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(ko)
*
|
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2017-10-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(ko)
|
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2017-01-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
CN102696064B
(zh)
*
|
2010-01-15 |
2015-11-25 |
株式会社半导体能源研究所 |
半导体装置和电子装置
|
SG10201500220TA
(en)
|
2010-01-15 |
2015-03-30 |
Semiconductor Energy Lab |
Semiconductor device and method for driving the same
|
KR101848516B1
(ko)
*
|
2010-01-15 |
2018-04-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
US8780629B2
(en)
|
2010-01-15 |
2014-07-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
WO2011086847A1
(en)
|
2010-01-15 |
2011-07-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011089832A1
(en)
|
2010-01-20 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving display device and liquid crystal display device
|
KR101978106B1
(ko)
|
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2019-05-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011089849A1
(en)
|
2010-01-20 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Portable electronic device
|
CN102713999B
(zh)
|
2010-01-20 |
2016-01-20 |
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电子设备和电子系统
|
KR102217907B1
(ko)
|
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2021-02-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
WO2011089847A1
(en)
|
2010-01-20 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing circuit and method for driving the same
|
US8415731B2
(en)
*
|
2010-01-20 |
2013-04-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor storage device with integrated capacitor and having transistor overlapping sections
|
KR101816505B1
(ko)
|
2010-01-20 |
2018-01-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치의 표시 방법
|
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(ko)
|
2010-01-20 |
2017-06-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치의 구동 방법
|
WO2011089843A1
(en)
|
2010-01-20 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving display device
|
US9984617B2
(en)
|
2010-01-20 |
2018-05-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device including light emitting element
|
WO2011089852A1
(en)
*
|
2010-01-22 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and driving method thereof
|
KR102088281B1
(ko)
|
2010-01-22 |
2020-03-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
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(ko)
|
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2018-02-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101873730B1
(ko)
|
2010-01-24 |
2018-07-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
WO2011089844A1
(en)
|
2010-01-24 |
2011-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and manufacturing method thereof
|
TWI525377B
(zh)
|
2010-01-24 |
2016-03-11 |
半導體能源研究所股份有限公司 |
顯示裝置
|
KR20120120330A
(ko)
|
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2012-11-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011093151A1
(en)
|
2010-01-29 |
2011-08-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device including the same
|
KR101299256B1
(ko)
*
|
2010-01-29 |
2013-08-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 기억 장치
|
WO2011096262A1
(en)
|
2010-02-05 |
2011-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8436403B2
(en)
|
2010-02-05 |
2013-05-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including transistor provided with sidewall and electronic appliance
|
US9391209B2
(en)
|
2010-02-05 |
2016-07-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR20180028557A
(ko)
|
2010-02-05 |
2018-03-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제조 방법
|
KR101399609B1
(ko)
|
2010-02-05 |
2014-05-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 및 반도체 장치의 제조 방법
|
KR101822962B1
(ko)
|
2010-02-05 |
2018-01-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011096153A1
(en)
|
2010-02-05 |
2011-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
CN102687275B
(zh)
*
|
2010-02-05 |
2016-01-27 |
株式会社半导体能源研究所 |
半导体装置
|
KR101791713B1
(ko)
|
2010-02-05 |
2017-10-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
전계 효과 트랜지스터 및 반도체 장치
|
WO2011096277A1
(en)
*
|
2010-02-05 |
2011-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of driving semiconductor device
|
WO2011096264A1
(en)
|
2010-02-05 |
2011-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of driving semiconductor device
|
WO2011099342A1
(en)
|
2010-02-10 |
2011-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Field effect transistor
|
US8947337B2
(en)
|
2010-02-11 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
CN102763156B
(zh)
*
|
2010-02-12 |
2015-11-25 |
株式会社半导体能源研究所 |
液晶显示装置和电子装置
|
EP2534679B1
(de)
|
2010-02-12 |
2021-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleiterbauelement und verfahren zu dessen ansteuerung
|
US8617920B2
(en)
*
|
2010-02-12 |
2013-12-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
WO2011099343A1
(en)
|
2010-02-12 |
2011-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
CN102754209B
(zh)
*
|
2010-02-12 |
2015-11-25 |
株式会社半导体能源研究所 |
半导体装置及其驱动方法
|
KR102197415B1
(ko)
|
2010-02-12 |
2020-12-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 및 구동 방법
|
WO2011099368A1
(en)
*
|
2010-02-12 |
2011-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the same
|
KR101838130B1
(ko)
|
2010-02-12 |
2018-03-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작방법
|
KR101775180B1
(ko)
|
2010-02-12 |
2017-09-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 구동 방법
|
JP5776192B2
(ja)
*
|
2010-02-16 |
2015-09-09 |
株式会社リコー |
電界効果型トランジスタ、表示素子、画像表示装置及びシステム
|
KR20230145240A
(ko)
|
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2023-10-17 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101848684B1
(ko)
|
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2018-04-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 전자 장치
|
JP5740169B2
(ja)
*
|
2010-02-19 |
2015-06-24 |
株式会社半導体エネルギー研究所 |
トランジスタの作製方法
|
CN102754162B
(zh)
|
2010-02-19 |
2015-12-09 |
株式会社半导体能源研究所 |
半导体器件及半导体器件的驱动方法
|
KR101780748B1
(ko)
*
|
2010-02-19 |
2017-09-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
복조회로 및 복조회로를 이용한 rfid 태그
|
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(ko)
|
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2016-12-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011102183A1
(en)
|
2010-02-19 |
2011-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR20120121931A
(ko)
*
|
2010-02-19 |
2012-11-06 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
CN105786268B
(zh)
|
2010-02-19 |
2019-03-12 |
株式会社半导体能源研究所 |
显示设备及其驱动方法
|
WO2011102233A1
(en)
*
|
2010-02-19 |
2011-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR102015762B1
(ko)
*
|
2010-02-19 |
2019-08-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 메모리 장치, 그 구동 방법, 및 반도체 장치 제작 방법
|
KR101906151B1
(ko)
|
2010-02-19 |
2018-10-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터 및 이를 이용한 표시 장치
|
KR102386149B1
(ko)
*
|
2010-02-23 |
2022-04-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
KR20180001562A
(ko)
|
2010-02-26 |
2018-01-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치를 제작하기 위한 방법
|
WO2011105198A1
(en)
*
|
2010-02-26 |
2011-09-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR101733765B1
(ko)
*
|
2010-02-26 |
2017-05-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시장치 및 표시장치의 구동 방법
|
KR102047354B1
(ko)
|
2010-02-26 |
2019-11-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011105310A1
(en)
|
2010-02-26 |
2011-09-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9000438B2
(en)
|
2010-02-26 |
2015-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
CN107045235A
(zh)
|
2010-02-26 |
2017-08-15 |
株式会社半导体能源研究所 |
液晶显示装置
|
WO2011105218A1
(en)
*
|
2010-02-26 |
2011-09-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and e-book reader provided therewith
|
WO2011105183A1
(en)
*
|
2010-02-26 |
2011-09-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor element and deposition apparatus
|
WO2011108343A1
(en)
|
2010-03-02 |
2011-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Pulse signal output circuit and shift register
|
WO2011108345A1
(en)
*
|
2010-03-02 |
2011-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Pulse signal output circuit and shift register
|
KR101706292B1
(ko)
|
2010-03-02 |
2017-02-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
펄스 신호 출력 회로 및 시프트 레지스터
|
KR101817926B1
(ko)
|
2010-03-02 |
2018-01-12 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
승압 회로 및 승압 회로를 포함하는 rfid 태그
|
WO2011108475A1
(en)
*
|
2010-03-04 |
2011-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and semiconductor device
|
KR101878206B1
(ko)
*
|
2010-03-05 |
2018-07-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법
|
WO2011108374A1
(en)
|
2010-03-05 |
2011-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
WO2011108382A1
(en)
*
|
2010-03-05 |
2011-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
KR102341927B1
(ko)
|
2010-03-05 |
2021-12-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
TWI594173B
(zh)
*
|
2010-03-08 |
2017-08-01 |
半導體能源研究所股份有限公司 |
電子裝置及電子系統
|
DE112011100841B4
(de)
|
2010-03-08 |
2021-11-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung und verfahren zur herstellung der halbleitervorrichtung
|
KR101812467B1
(ko)
*
|
2010-03-08 |
2017-12-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101791253B1
(ko)
|
2010-03-08 |
2017-11-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
전자기기 및 전자 시스템
|
WO2011111490A1
(en)
|
2010-03-08 |
2011-09-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
CN104979369B
(zh)
*
|
2010-03-08 |
2018-04-06 |
株式会社半导体能源研究所 |
半导体器件及其制造方法
|
KR20190018049A
(ko)
|
2010-03-08 |
2019-02-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치를 제작하는 방법
|
KR101840185B1
(ko)
|
2010-03-12 |
2018-03-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
회로를 구동하는 방법 및 표시 장치를 구동하는 방법
|
WO2011111508A1
(en)
*
|
2010-03-12 |
2011-09-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving input circuit and method for driving input-output device
|
US8900362B2
(en)
|
2010-03-12 |
2014-12-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of gallium oxide single crystal
|
KR101770550B1
(ko)
|
2010-03-12 |
2017-08-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치의 구동 방법
|
CN102804380B
(zh)
|
2010-03-12 |
2015-11-25 |
株式会社半导体能源研究所 |
半导体装置
|
WO2011111507A1
(en)
|
2010-03-12 |
2011-09-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
WO2011114866A1
(en)
|
2010-03-17 |
2011-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
US20110227082A1
(en)
*
|
2010-03-19 |
2011-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR102001820B1
(ko)
*
|
2010-03-19 |
2019-07-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치 구동 방법
|
WO2011114905A1
(en)
*
|
2010-03-19 |
2011-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
CN102812547B
(zh)
|
2010-03-19 |
2015-09-09 |
株式会社半导体能源研究所 |
半导体装置
|
WO2011114868A1
(en)
|
2010-03-19 |
2011-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011118351A1
(en)
*
|
2010-03-25 |
2011-09-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011118741A1
(en)
|
2010-03-26 |
2011-09-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
JP5731244B2
(ja)
*
|
2010-03-26 |
2015-06-10 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
KR101435970B1
(ko)
|
2010-03-26 |
2014-08-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치를 제작하는 방법
|
WO2011118364A1
(en)
|
2010-03-26 |
2011-09-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
DE112011101069B4
(de)
*
|
2010-03-26 |
2018-05-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung und Verfahren zur Herstellung der Halbleitervorrichtung
|
CN102844873B
(zh)
|
2010-03-31 |
2015-06-17 |
株式会社半导体能源研究所 |
半导体显示装置
|
WO2011122514A1
(en)
|
2010-03-31 |
2011-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Power supply device and driving method thereof
|
WO2011122299A1
(en)
|
2010-03-31 |
2011-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of liquid crystal display device
|
KR101814367B1
(ko)
|
2010-03-31 |
2018-01-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 그 구동 방법
|
WO2011122271A1
(en)
|
2010-03-31 |
2011-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Field-sequential display device
|
US8884282B2
(en)
|
2010-04-02 |
2014-11-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9147768B2
(en)
|
2010-04-02 |
2015-09-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having an oxide semiconductor and a metal oxide film
|
US9190522B2
(en)
|
2010-04-02 |
2015-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having an oxide semiconductor
|
WO2011122363A1
(en)
|
2010-04-02 |
2011-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
CN102834922B
(zh)
|
2010-04-02 |
2016-04-13 |
株式会社半导体能源研究所 |
半导体装置
|
US9196739B2
(en)
|
2010-04-02 |
2015-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including oxide semiconductor film and metal oxide film
|
CN102918650B
(zh)
|
2010-04-07 |
2017-03-22 |
株式会社半导体能源研究所 |
晶体管
|
WO2011125432A1
(en)
|
2010-04-07 |
2011-10-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
KR101884798B1
(ko)
|
2010-04-09 |
2018-08-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR101321833B1
(ko)
|
2010-04-09 |
2013-10-23 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체 메모리 장치
|
DE112011101260T5
(de)
|
2010-04-09 |
2013-05-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Flüssigkristall-Anzeigevorrichtung und Verfahren zum Ansteuern derselben
|
US8207025B2
(en)
|
2010-04-09 |
2012-06-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
WO2011125806A1
(en)
|
2010-04-09 |
2011-10-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
US8653514B2
(en)
|
2010-04-09 |
2014-02-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
WO2011125456A1
(en)
|
2010-04-09 |
2011-10-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5744366B2
(ja)
|
2010-04-12 |
2015-07-08 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
US8854583B2
(en)
|
2010-04-12 |
2014-10-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and liquid crystal display device
|
JP2011237418A
(ja)
|
2010-04-16 |
2011-11-24 |
Semiconductor Energy Lab Co Ltd |
電流測定方法、半導体装置の検査方法、半導体装置、および特性評価用回路
|
CN102844847B
(zh)
|
2010-04-16 |
2015-09-23 |
株式会社半导体能源研究所 |
沉积方法及半导体装置的制造方法
|
KR101904445B1
(ko)
|
2010-04-16 |
2018-10-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR20130061678A
(ko)
|
2010-04-16 |
2013-06-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
전원 회로
|
US8692243B2
(en)
|
2010-04-20 |
2014-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR20130054275A
(ko)
|
2010-04-23 |
2013-05-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
KR101854421B1
(ko)
|
2010-04-23 |
2018-05-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
WO2011132591A1
(en)
|
2010-04-23 |
2011-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US9537043B2
(en)
|
2010-04-23 |
2017-01-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Photoelectric conversion device and manufacturing method thereof
|
CN106057907B
(zh)
|
2010-04-23 |
2019-10-22 |
株式会社半导体能源研究所 |
半导体装置的制造方法
|
KR101540039B1
(ko)
|
2010-04-23 |
2015-07-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
WO2011132625A1
(en)
|
2010-04-23 |
2011-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
DE112011101396T5
(de)
|
2010-04-23 |
2013-03-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Anzeigevorrichtung und Treiberverfahren für dieselbe
|
WO2011135999A1
(en)
|
2010-04-27 |
2011-11-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
WO2011136018A1
(en)
|
2010-04-28 |
2011-11-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic appliance
|
DE112011101475T5
(de)
|
2010-04-28 |
2013-03-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleiteranzeigevorrichtung mit Ansteuerverfahren
|
US9349325B2
(en)
|
2010-04-28 |
2016-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic device
|
US9697788B2
(en)
|
2010-04-28 |
2017-07-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
WO2011135987A1
(en)
|
2010-04-28 |
2011-11-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US8890555B2
(en)
|
2010-04-28 |
2014-11-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for measuring transistor
|
US9478185B2
(en)
|
2010-05-12 |
2016-10-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Electro-optical display device and display method thereof
|
US9064473B2
(en)
|
2010-05-12 |
2015-06-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Electro-optical display device and display method thereof
|
JP5797449B2
(ja)
|
2010-05-13 |
2015-10-21 |
株式会社半導体エネルギー研究所 |
半導体装置の評価方法
|
WO2011142371A1
(en)
|
2010-05-14 |
2011-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR101806271B1
(ko)
|
2010-05-14 |
2017-12-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
US8664658B2
(en)
|
2010-05-14 |
2014-03-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TWI511236B
(zh)
|
2010-05-14 |
2015-12-01 |
Semiconductor Energy Lab |
半導體裝置
|
US9490368B2
(en)
|
2010-05-20 |
2016-11-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of the same
|
US8588000B2
(en)
|
2010-05-20 |
2013-11-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device having a reading transistor with a back-gate electrode
|
US8624239B2
(en)
|
2010-05-20 |
2014-01-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8416622B2
(en)
|
2010-05-20 |
2013-04-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
|
US9496405B2
(en)
|
2010-05-20 |
2016-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
|
KR101872927B1
(ko)
|
2010-05-21 |
2018-06-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011145468A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
US8629438B2
(en)
|
2010-05-21 |
2014-01-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
WO2011145707A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device
|
WO2011145633A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011145706A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device
|
JP5766012B2
(ja)
|
2010-05-21 |
2015-08-19 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
WO2011145634A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
CN102906882B
(zh)
|
2010-05-21 |
2015-11-25 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
WO2011145484A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8906756B2
(en)
|
2010-05-21 |
2014-12-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
JP5714973B2
(ja)
|
2010-05-21 |
2015-05-07 |
株式会社半導体エネルギー研究所 |
半導体装置
|
CN105957802A
(zh)
|
2010-05-21 |
2016-09-21 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
JP5852793B2
(ja)
|
2010-05-21 |
2016-02-03 |
株式会社半導体エネルギー研究所 |
液晶表示装置の作製方法
|
WO2011145537A1
(en)
|
2010-05-21 |
2011-11-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
JP5749975B2
(ja)
|
2010-05-28 |
2015-07-15 |
株式会社半導体エネルギー研究所 |
光検出装置、及び、タッチパネル
|
US8895375B2
(en)
|
2010-06-01 |
2014-11-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Field effect transistor and method for manufacturing the same
|
US8779433B2
(en)
|
2010-06-04 |
2014-07-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR101894897B1
(ko)
|
2010-06-04 |
2018-09-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2011152254A1
(en)
|
2010-06-04 |
2011-12-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011152286A1
(en)
|
2010-06-04 |
2011-12-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011155125A1
(ja)
*
|
2010-06-08 |
2011-12-15 |
シャープ株式会社 |
薄膜トランジスタ基板及びそれを備えた液晶表示装置並びに薄膜トランジスタ基板の製造方法
|
WO2011155295A1
(en)
|
2010-06-10 |
2011-12-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Dc/dc converter, power supply circuit, and semiconductor device
|
KR101938726B1
(ko)
|
2010-06-11 |
2019-01-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
WO2011155302A1
(en)
|
2010-06-11 |
2011-12-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8610180B2
(en)
|
2010-06-11 |
2013-12-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Gas sensor and method for manufacturing the gas sensor
|
JP5823740B2
(ja)
|
2010-06-16 |
2015-11-25 |
株式会社半導体エネルギー研究所 |
入出力装置
|
US9209314B2
(en)
|
2010-06-16 |
2015-12-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Field effect transistor
|
JP5797471B2
(ja)
|
2010-06-16 |
2015-10-21 |
株式会社半導体エネルギー研究所 |
入出力装置
|
WO2011158703A1
(en)
|
2010-06-18 |
2011-12-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8637802B2
(en)
|
2010-06-18 |
2014-01-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
|
US8552425B2
(en)
|
2010-06-18 |
2013-10-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2011158704A1
(en)
|
2010-06-18 |
2011-12-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
WO2011162147A1
(en)
|
2010-06-23 |
2011-12-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR20120000499A
(ko)
|
2010-06-25 |
2012-01-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터 및 반도체 장치
|
US8912016B2
(en)
|
2010-06-25 |
2014-12-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method and test method of semiconductor device
|
WO2011162104A1
(en)
|
2010-06-25 |
2011-12-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
WO2012002236A1
(en)
|
2010-06-29 |
2012-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Wiring board, semiconductor device, and manufacturing methods thereof
|
WO2012002104A1
(en)
|
2010-06-30 |
2012-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
JP5771079B2
(ja)
|
2010-07-01 |
2015-08-26 |
株式会社半導体エネルギー研究所 |
撮像装置
|
KR101801960B1
(ko)
|
2010-07-01 |
2017-11-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치의 구동 방법
|
US8441010B2
(en)
|
2010-07-01 |
2013-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8642380B2
(en)
|
2010-07-02 |
2014-02-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
JP5792524B2
(ja)
|
2010-07-02 |
2015-10-14 |
株式会社半導体エネルギー研究所 |
装置
|
WO2012002186A1
(en)
|
2010-07-02 |
2012-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
CN102959713B
(zh)
|
2010-07-02 |
2017-05-10 |
株式会社半导体能源研究所 |
半导体装置
|
TWI541782B
(zh)
|
2010-07-02 |
2016-07-11 |
半導體能源研究所股份有限公司 |
液晶顯示裝置
|
US8605059B2
(en)
|
2010-07-02 |
2013-12-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Input/output device and driving method thereof
|
US9336739B2
(en)
|
2010-07-02 |
2016-05-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
KR20180135118A
(ko)
|
2010-07-02 |
2018-12-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
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(ko)
|
2010-07-02 |
2013-08-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치
|
WO2012008390A1
(en)
|
2010-07-16 |
2012-01-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR101859361B1
(ko)
|
2010-07-16 |
2018-05-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
US8785241B2
(en)
|
2010-07-16 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
KR101850567B1
(ko)
|
2010-07-16 |
2018-04-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
JP5917035B2
(ja)
|
2010-07-26 |
2016-05-11 |
株式会社半導体エネルギー研究所 |
半導体装置
|
KR101853516B1
(ko)
|
2010-07-27 |
2018-04-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR102143469B1
(ko)
|
2010-07-27 |
2020-08-11 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
TWI565001B
(zh)
|
2010-07-28 |
2017-01-01 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的驅動方法
|
JP5846789B2
(ja)
|
2010-07-29 |
2016-01-20 |
株式会社半導体エネルギー研究所 |
半導体装置
|
WO2012014786A1
(en)
|
2010-07-30 |
2012-02-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semicondcutor device and manufacturing method thereof
|
US8537600B2
(en)
|
2010-08-04 |
2013-09-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Low off-state leakage current semiconductor memory device
|
KR101842181B1
(ko)
|
2010-08-04 |
2018-03-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
US8928466B2
(en)
|
2010-08-04 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5739257B2
(ja)
|
2010-08-05 |
2015-06-24 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
CN103026416B
(zh)
|
2010-08-06 |
2016-04-27 |
株式会社半导体能源研究所 |
半导体装置
|
CN103069717B
(zh)
|
2010-08-06 |
2018-01-30 |
株式会社半导体能源研究所 |
半导体集成电路
|
TWI524347B
(zh)
|
2010-08-06 |
2016-03-01 |
半導體能源研究所股份有限公司 |
半導體裝置及其驅動方法
|
JP5671418B2
(ja)
|
2010-08-06 |
2015-02-18 |
株式会社半導体エネルギー研究所 |
半導体装置の駆動方法
|
JP5832181B2
(ja)
|
2010-08-06 |
2015-12-16 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
US8803164B2
(en)
|
2010-08-06 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Solid-state image sensing device and semiconductor display device
|
US8792284B2
(en)
|
2010-08-06 |
2014-07-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor memory device
|
US8467231B2
(en)
|
2010-08-06 |
2013-06-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
TWI555128B
(zh)
|
2010-08-06 |
2016-10-21 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的驅動方法
|
US8422272B2
(en)
|
2010-08-06 |
2013-04-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
JP5743790B2
(ja)
|
2010-08-06 |
2015-07-01 |
株式会社半導体エネルギー研究所 |
半導体装置
|
TWI605549B
(zh)
|
2010-08-06 |
2017-11-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
US8467232B2
(en)
|
2010-08-06 |
2013-06-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5848912B2
(ja)
|
2010-08-16 |
2016-01-27 |
株式会社半導体エネルギー研究所 |
液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
|
US9343480B2
(en)
|
2010-08-16 |
2016-05-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9129703B2
(en)
|
2010-08-16 |
2015-09-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving semiconductor memory device
|
US8748224B2
(en)
|
2010-08-16 |
2014-06-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
TWI508294B
(zh)
|
2010-08-19 |
2015-11-11 |
Semiconductor Energy Lab |
半導體裝置
|
US8759820B2
(en)
|
2010-08-20 |
2014-06-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8685787B2
(en)
|
2010-08-25 |
2014-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
US8508276B2
(en)
|
2010-08-25 |
2013-08-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including latch circuit
|
US8883555B2
(en)
|
2010-08-25 |
2014-11-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Electronic device, manufacturing method of electronic device, and sputtering target
|
JP5727892B2
(ja)
|
2010-08-26 |
2015-06-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9058047B2
(en)
|
2010-08-26 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP2013009285A
(ja)
|
2010-08-26 |
2013-01-10 |
Semiconductor Energy Lab Co Ltd |
信号処理回路及びその駆動方法
|
US8450123B2
(en)
|
2010-08-27 |
2013-05-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxygen diffusion evaluation method of oxide film stacked body
|
WO2012026503A1
(en)
|
2010-08-27 |
2012-03-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
JP5674594B2
(ja)
|
2010-08-27 |
2015-02-25 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の駆動方法
|
JP5806043B2
(ja)
|
2010-08-27 |
2015-11-10 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP5864163B2
(ja)
|
2010-08-27 |
2016-02-17 |
株式会社半導体エネルギー研究所 |
半導体装置の設計方法
|
JP5763474B2
(ja)
|
2010-08-27 |
2015-08-12 |
株式会社半導体エネルギー研究所 |
光センサ
|
US8603841B2
(en)
|
2010-08-27 |
2013-12-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing methods of semiconductor device and light-emitting display device
|
JP5702689B2
(ja)
|
2010-08-31 |
2015-04-15 |
株式会社半導体エネルギー研究所 |
半導体装置の駆動方法、及び半導体装置
|
US8575610B2
(en)
|
2010-09-02 |
2013-11-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
US8634228B2
(en)
|
2010-09-02 |
2014-01-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of semiconductor device
|
KR20180015760A
(ko)
|
2010-09-03 |
2018-02-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
전계 효과 트랜지스터 및 반도체 장치의 제조 방법
|
WO2012029612A1
(en)
|
2010-09-03 |
2012-03-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Sputtering target and method for manufacturing semiconductor device
|
US8728860B2
(en)
|
2010-09-03 |
2014-05-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
WO2012029638A1
(en)
|
2010-09-03 |
2012-03-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8520426B2
(en)
|
2010-09-08 |
2013-08-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving semiconductor device
|
JP2012256819A
(ja)
|
2010-09-08 |
2012-12-27 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
US8487844B2
(en)
|
2010-09-08 |
2013-07-16 |
Semiconductor Energy Laboratory Co., Ltd. |
EL display device and electronic device including the same
|
US9142568B2
(en)
|
2010-09-10 |
2015-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing light-emitting display device
|
US8766253B2
(en)
|
2010-09-10 |
2014-07-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR20120026970A
(ko)
|
2010-09-10 |
2012-03-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 발광 장치
|
US8797487B2
(en)
|
2010-09-10 |
2014-08-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, liquid crystal display device, and manufacturing method thereof
|
KR101824125B1
(ko)
|
2010-09-10 |
2018-02-01 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
JP2012256821A
(ja)
|
2010-09-13 |
2012-12-27 |
Semiconductor Energy Lab Co Ltd |
記憶装置
|
US9496743B2
(en)
|
2010-09-13 |
2016-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Power receiving device and wireless power feed system
|
KR101872926B1
(ko)
|
2010-09-13 |
2018-06-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
US8546161B2
(en)
|
2010-09-13 |
2013-10-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of thin film transistor and liquid crystal display device
|
US8664097B2
(en)
|
2010-09-13 |
2014-03-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
KR101932576B1
(ko)
|
2010-09-13 |
2018-12-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
US8871565B2
(en)
|
2010-09-13 |
2014-10-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
KR101952235B1
(ko)
|
2010-09-13 |
2019-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
TWI608486B
(zh)
|
2010-09-13 |
2017-12-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
US8835917B2
(en)
|
2010-09-13 |
2014-09-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, power diode, and rectifier
|
US8647919B2
(en)
|
2010-09-13 |
2014-02-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting display device and method for manufacturing the same
|
US8558960B2
(en)
|
2010-09-13 |
2013-10-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and method for manufacturing the same
|
US8592879B2
(en)
|
2010-09-13 |
2013-11-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
JP5815337B2
(ja)
|
2010-09-13 |
2015-11-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP5827520B2
(ja)
|
2010-09-13 |
2015-12-02 |
株式会社半導体エネルギー研究所 |
半導体記憶装置
|
US9546416B2
(en)
|
2010-09-13 |
2017-01-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of forming crystalline oxide semiconductor film
|
TWI539453B
(zh)
|
2010-09-14 |
2016-06-21 |
半導體能源研究所股份有限公司 |
記憶體裝置和半導體裝置
|
KR101426515B1
(ko)
|
2010-09-15 |
2014-08-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 표시 장치
|
US9230994B2
(en)
|
2010-09-15 |
2016-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
KR20130106398A
(ko)
|
2010-09-15 |
2013-09-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
액정 표시 장치 및 그 제작 방법
|
JP2012256012A
(ja)
|
2010-09-15 |
2012-12-27 |
Semiconductor Energy Lab Co Ltd |
表示装置
|
US8767443B2
(en)
|
2010-09-22 |
2014-07-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and method for inspecting the same
|
KR101856722B1
(ko)
|
2010-09-22 |
2018-05-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
파워 절연 게이트형 전계 효과 트랜지스터
|
US8792260B2
(en)
|
2010-09-27 |
2014-07-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Rectifier circuit and semiconductor device using the same
|
TWI574259B
(zh)
|
2010-09-29 |
2017-03-11 |
半導體能源研究所股份有限公司 |
半導體記憶體裝置和其驅動方法
|
TWI691960B
(zh)
|
2010-10-05 |
2020-04-21 |
日商半導體能源研究所股份有限公司 |
半導體記憶體裝置及其驅動方法
|
US9437743B2
(en)
|
2010-10-07 |
2016-09-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film element, semiconductor device, and method for manufacturing the same
|
US8716646B2
(en)
|
2010-10-08 |
2014-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Photoelectric conversion device and method for operating the same
|
US8679986B2
(en)
|
2010-10-14 |
2014-03-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing display device
|
US8546892B2
(en)
|
2010-10-20 |
2013-10-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
US8803143B2
(en)
|
2010-10-20 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor including buffer layers with high resistivity
|
TWI543158B
(zh)
|
2010-10-25 |
2016-07-21 |
半導體能源研究所股份有限公司 |
半導體儲存裝置及其驅動方法
|
KR101952456B1
(ko)
|
2010-10-29 |
2019-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
기억 장치
|
KR101924231B1
(ko)
|
2010-10-29 |
2018-11-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 기억 장치
|
JP5771505B2
(ja)
|
2010-10-29 |
2015-09-02 |
株式会社半導体エネルギー研究所 |
受信回路
|
KR101924656B1
(ko)
|
2010-11-02 |
2018-12-03 |
우베 고산 가부시키가이샤 |
(아미드아미노알칸) 금속 화합물, 및 당해 금속 화합물을 사용한 금속 함유 박막의 제조 방법
|
US8916866B2
(en)
|
2010-11-03 |
2014-12-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6010291B2
(ja)
|
2010-11-05 |
2016-10-19 |
株式会社半導体エネルギー研究所 |
表示装置の駆動方法
|
US8569754B2
(en)
|
2010-11-05 |
2013-10-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
TWI555205B
(zh)
|
2010-11-05 |
2016-10-21 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
WO2012060202A1
(en)
|
2010-11-05 |
2012-05-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2012060253A1
(en)
|
2010-11-05 |
2012-05-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8957468B2
(en)
|
2010-11-05 |
2015-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Variable capacitor and liquid crystal display device
|
US9087744B2
(en)
|
2010-11-05 |
2015-07-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving transistor
|
US8902637B2
(en)
|
2010-11-08 |
2014-12-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
|
TWI535014B
(zh)
|
2010-11-11 |
2016-05-21 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
JP5770068B2
(ja)
|
2010-11-12 |
2015-08-26 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US8854865B2
(en)
|
2010-11-24 |
2014-10-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
US8936965B2
(en)
|
2010-11-26 |
2015-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
TWI562379B
(en)
|
2010-11-30 |
2016-12-11 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and method for manufacturing semiconductor device
|
US8816425B2
(en)
|
2010-11-30 |
2014-08-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US8823092B2
(en)
|
2010-11-30 |
2014-09-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US9103724B2
(en)
|
2010-11-30 |
2015-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
|
US8809852B2
(en)
|
2010-11-30 |
2014-08-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
|
US8629496B2
(en)
|
2010-11-30 |
2014-01-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US8461630B2
(en)
|
2010-12-01 |
2013-06-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
TWI632551B
(zh)
|
2010-12-03 |
2018-08-11 |
半導體能源研究所股份有限公司 |
積體電路,其驅動方法,及半導體裝置
|
KR101457833B1
(ko)
|
2010-12-03 |
2014-11-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
JP5908263B2
(ja)
|
2010-12-03 |
2016-04-26 |
株式会社半導体エネルギー研究所 |
Dc−dcコンバータ
|
JP5856827B2
(ja)
|
2010-12-09 |
2016-02-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
TWI534905B
(zh)
|
2010-12-10 |
2016-05-21 |
半導體能源研究所股份有限公司 |
顯示裝置及顯示裝置之製造方法
|
JP2012256020A
(ja)
|
2010-12-15 |
2012-12-27 |
Semiconductor Energy Lab Co Ltd |
半導体装置及びその駆動方法
|
US8730416B2
(en)
|
2010-12-17 |
2014-05-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
JP2012142562A
(ja)
|
2010-12-17 |
2012-07-26 |
Semiconductor Energy Lab Co Ltd |
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|
US8894825B2
(en)
|
2010-12-17 |
2014-11-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Sputtering target, method for manufacturing the same, manufacturing semiconductor device
|
US9202822B2
(en)
|
2010-12-17 |
2015-12-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US9024317B2
(en)
|
2010-12-24 |
2015-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
|
WO2012090973A1
(en)
|
2010-12-28 |
2012-07-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
KR101981808B1
(ko)
|
2010-12-28 |
2019-08-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제조 방법
|
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(ja)
|
2010-12-28 |
2016-11-24 |
株式会社半導体エネルギー研究所 |
緩衝記憶装置及び信号処理回路
|
JP5852874B2
(ja)
|
2010-12-28 |
2016-02-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9048142B2
(en)
|
2010-12-28 |
2015-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5864054B2
(ja)
|
2010-12-28 |
2016-02-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP5975635B2
(ja)
|
2010-12-28 |
2016-08-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9443984B2
(en)
|
2010-12-28 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US8941112B2
(en)
|
2010-12-28 |
2015-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
JP5973165B2
(ja)
|
2010-12-28 |
2016-08-23 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP2012151453A
(ja)
|
2010-12-28 |
2012-08-09 |
Semiconductor Energy Lab Co Ltd |
半導体装置および半導体装置の駆動方法
|
JP5993141B2
(ja)
|
2010-12-28 |
2016-09-14 |
株式会社半導体エネルギー研究所 |
記憶装置
|
WO2012090799A1
(en)
|
2010-12-28 |
2012-07-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
TWI621121B
(zh)
|
2011-01-05 |
2018-04-11 |
半導體能源研究所股份有限公司 |
儲存元件、儲存裝置、及信號處理電路
|
US8921948B2
(en)
|
2011-01-12 |
2014-12-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
TWI570809B
(zh)
|
2011-01-12 |
2017-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
US8912080B2
(en)
|
2011-01-12 |
2014-12-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of the semiconductor device
|
TWI535032B
(zh)
|
2011-01-12 |
2016-05-21 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
US8536571B2
(en)
|
2011-01-12 |
2013-09-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
US8421071B2
(en)
|
2011-01-13 |
2013-04-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
US8575678B2
(en)
|
2011-01-13 |
2013-11-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device with floating gate
|
KR102026718B1
(ko)
|
2011-01-14 |
2019-09-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
기억장치, 반도체 장치, 검출 방법
|
TWI657565B
(zh)
|
2011-01-14 |
2019-04-21 |
日商半導體能源研究所股份有限公司 |
半導體記憶裝置
|
JP5859839B2
(ja)
|
2011-01-14 |
2016-02-16 |
株式会社半導体エネルギー研究所 |
記憶素子の駆動方法、及び、記憶素子
|
JP5897910B2
(ja)
|
2011-01-20 |
2016-04-06 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
TWI552345B
(zh)
|
2011-01-26 |
2016-10-01 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
TWI570920B
(zh)
|
2011-01-26 |
2017-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
US9601178B2
(en)
|
2011-01-26 |
2017-03-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
WO2012102183A1
(en)
|
2011-01-26 |
2012-08-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
WO2012102182A1
(en)
|
2011-01-26 |
2012-08-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TW202211311A
(zh)
|
2011-01-26 |
2022-03-16 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
JP5798933B2
(ja)
|
2011-01-26 |
2015-10-21 |
株式会社半導体エネルギー研究所 |
信号処理回路
|
TWI525619B
(zh)
|
2011-01-27 |
2016-03-11 |
半導體能源研究所股份有限公司 |
記憶體電路
|
KR20190007525A
(ko)
|
2011-01-27 |
2019-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
KR20210034703A
(ko)
|
2011-01-28 |
2021-03-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법 및 반도체 장치
|
US9494829B2
(en)
|
2011-01-28 |
2016-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and liquid crystal display device containing the same
|
US8634230B2
(en)
|
2011-01-28 |
2014-01-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
WO2012102281A1
(en)
|
2011-01-28 |
2012-08-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8513773B2
(en)
|
2011-02-02 |
2013-08-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Capacitor and semiconductor device including dielectric and N-type semiconductor
|
TWI520273B
(zh)
|
2011-02-02 |
2016-02-01 |
半導體能源研究所股份有限公司 |
半導體儲存裝置
|
US9799773B2
(en)
|
2011-02-02 |
2017-10-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor and semiconductor device
|
JP6000560B2
(ja)
|
2011-02-02 |
2016-09-28 |
株式会社半導体エネルギー研究所 |
半導体メモリ装置
|
US9431400B2
(en)
|
2011-02-08 |
2016-08-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and method for manufacturing the same
|
US8787083B2
(en)
|
2011-02-10 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory circuit
|
US9167234B2
(en)
|
2011-02-14 |
2015-10-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
US8975680B2
(en)
|
2011-02-17 |
2015-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and method manufacturing semiconductor memory device
|
KR101899880B1
(ko)
|
2011-02-17 |
2018-09-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
프로그래머블 lsi
|
US8643007B2
(en)
|
2011-02-23 |
2014-02-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8709920B2
(en)
|
2011-02-24 |
2014-04-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US9443455B2
(en)
|
2011-02-25 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device having a plurality of pixels
|
US9691772B2
(en)
|
2011-03-03 |
2017-06-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device including memory cell which includes transistor and capacitor
|
US8785933B2
(en)
|
2011-03-04 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9646829B2
(en)
|
2011-03-04 |
2017-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
US8841664B2
(en)
|
2011-03-04 |
2014-09-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9023684B2
(en)
|
2011-03-04 |
2015-05-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US8659015B2
(en)
|
2011-03-04 |
2014-02-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5898527B2
(ja)
|
2011-03-04 |
2016-04-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US8659957B2
(en)
|
2011-03-07 |
2014-02-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of driving semiconductor device
|
JP5827145B2
(ja)
|
2011-03-08 |
2015-12-02 |
株式会社半導体エネルギー研究所 |
信号処理回路
|
US9099437B2
(en)
|
2011-03-08 |
2015-08-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8625085B2
(en)
|
2011-03-08 |
2014-01-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Defect evaluation method for semiconductor
|
US8541781B2
(en)
|
2011-03-10 |
2013-09-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US8772849B2
(en)
|
2011-03-10 |
2014-07-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
WO2012121265A1
(en)
|
2011-03-10 |
2012-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and method for manufacturing the same
|
US8760903B2
(en)
|
2011-03-11 |
2014-06-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Storage circuit
|
TWI521612B
(zh)
|
2011-03-11 |
2016-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
JP2012209543A
(ja)
|
2011-03-11 |
2012-10-25 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
TWI658516B
(zh)
|
2011-03-11 |
2019-05-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
JP5933300B2
(ja)
|
2011-03-16 |
2016-06-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
WO2012128030A1
(en)
|
2011-03-18 |
2012-09-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
|
JP5933897B2
(ja)
|
2011-03-18 |
2016-06-15 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US8859330B2
(en)
|
2011-03-23 |
2014-10-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
JP5839474B2
(ja)
|
2011-03-24 |
2016-01-06 |
株式会社半導体エネルギー研究所 |
信号処理回路
|
US9012904B2
(en)
|
2011-03-25 |
2015-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US9219159B2
(en)
|
2011-03-25 |
2015-12-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming oxide semiconductor film and method for manufacturing semiconductor device
|
US8686416B2
(en)
|
2011-03-25 |
2014-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and semiconductor device
|
TWI538215B
(zh)
|
2011-03-25 |
2016-06-11 |
半導體能源研究所股份有限公司 |
場效電晶體及包含該場效電晶體之記憶體與半導體電路
|
US8987728B2
(en)
|
2011-03-25 |
2015-03-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing semiconductor device
|
TWI545652B
(zh)
|
2011-03-25 |
2016-08-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
US8956944B2
(en)
|
2011-03-25 |
2015-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
JP6053098B2
(ja)
|
2011-03-28 |
2016-12-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP5879165B2
(ja)
|
2011-03-30 |
2016-03-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US8927329B2
(en)
|
2011-03-30 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing oxide semiconductor device with improved electronic properties
|
US8686486B2
(en)
|
2011-03-31 |
2014-04-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
TWI567735B
(zh)
|
2011-03-31 |
2017-01-21 |
半導體能源研究所股份有限公司 |
記憶體電路,記憶體單元,及訊號處理電路
|
US9082860B2
(en)
|
2011-03-31 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8541266B2
(en)
|
2011-04-01 |
2013-09-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
JP5982147B2
(ja)
|
2011-04-01 |
2016-08-31 |
株式会社半導体エネルギー研究所 |
発光装置
|
US9960278B2
(en)
|
2011-04-06 |
2018-05-01 |
Yuhei Sato |
Manufacturing method of semiconductor device
|
US8743590B2
(en)
|
2011-04-08 |
2014-06-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device using the same
|
US9142320B2
(en)
|
2011-04-08 |
2015-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory element and signal processing circuit
|
US9093538B2
(en)
|
2011-04-08 |
2015-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US9012905B2
(en)
|
2011-04-08 |
2015-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
|
US8854867B2
(en)
|
2011-04-13 |
2014-10-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and driving method of the memory device
|
US9478668B2
(en)
|
2011-04-13 |
2016-10-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and semiconductor device
|
JP5883699B2
(ja)
|
2011-04-13 |
2016-03-15 |
株式会社半導体エネルギー研究所 |
プログラマブルlsi
|
US8878270B2
(en)
|
2011-04-15 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
US8779488B2
(en)
|
2011-04-15 |
2014-07-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
JP5890234B2
(ja)
|
2011-04-15 |
2016-03-22 |
株式会社半導体エネルギー研究所 |
半導体装置及びその駆動方法
|
US8878174B2
(en)
|
2011-04-15 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
|
JP6001900B2
(ja)
|
2011-04-21 |
2016-10-05 |
株式会社半導体エネルギー研究所 |
信号処理回路
|
US8941958B2
(en)
|
2011-04-22 |
2015-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9331206B2
(en)
|
2011-04-22 |
2016-05-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide material and semiconductor device
|
US8916868B2
(en)
|
2011-04-22 |
2014-12-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
US10079053B2
(en)
|
2011-04-22 |
2018-09-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory element and memory device
|
US8809854B2
(en)
|
2011-04-22 |
2014-08-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5946683B2
(ja)
|
2011-04-22 |
2016-07-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US8932913B2
(en)
|
2011-04-22 |
2015-01-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
US9006803B2
(en)
|
2011-04-22 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing thereof
|
US8878288B2
(en)
|
2011-04-22 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
CN105931967B
(zh)
|
2011-04-27 |
2019-05-03 |
株式会社半导体能源研究所 |
半导体装置的制造方法
|
US9935622B2
(en)
|
2011-04-28 |
2018-04-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Comparator and semiconductor device including comparator
|
US8729545B2
(en)
|
2011-04-28 |
2014-05-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
KR101919056B1
(ko)
|
2011-04-28 |
2018-11-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 회로
|
US8681533B2
(en)
|
2011-04-28 |
2014-03-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory circuit, signal processing circuit, and electronic device
|
KR101963457B1
(ko)
|
2011-04-29 |
2019-03-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 기억 장치 및 그 구동 방법
|
US8848464B2
(en)
|
2011-04-29 |
2014-09-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of driving semiconductor device
|
US8785923B2
(en)
|
2011-04-29 |
2014-07-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8476927B2
(en)
|
2011-04-29 |
2013-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device
|
TWI525615B
(zh)
|
2011-04-29 |
2016-03-11 |
半導體能源研究所股份有限公司 |
半導體儲存裝置
|
US8446171B2
(en)
|
2011-04-29 |
2013-05-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing unit
|
US9111795B2
(en)
|
2011-04-29 |
2015-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device with capacitor connected to memory element through oxide semiconductor film
|
US9614094B2
(en)
|
2011-04-29 |
2017-04-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including oxide semiconductor layer and method for driving the same
|
TWI743509B
(zh)
|
2011-05-05 |
2021-10-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
US9117701B2
(en)
|
2011-05-06 |
2015-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8809928B2
(en)
|
2011-05-06 |
2014-08-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, memory device, and method for manufacturing the semiconductor device
|
TWI568181B
(zh)
|
2011-05-06 |
2017-01-21 |
半導體能源研究所股份有限公司 |
邏輯電路及半導體裝置
|
WO2012153473A1
(en)
|
2011-05-06 |
2012-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2012153697A1
(en)
|
2011-05-06 |
2012-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
US8709922B2
(en)
|
2011-05-06 |
2014-04-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9443844B2
(en)
|
2011-05-10 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Gain cell semiconductor memory device and driving method thereof
|
TWI541978B
(zh)
|
2011-05-11 |
2016-07-11 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置之驅動方法
|
US8946066B2
(en)
|
2011-05-11 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
TWI557711B
(zh)
|
2011-05-12 |
2016-11-11 |
半導體能源研究所股份有限公司 |
顯示裝置的驅動方法
|
US8847233B2
(en)
|
2011-05-12 |
2014-09-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
|
KR101940570B1
(ko)
|
2011-05-13 |
2019-01-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
El 표시 장치 및 그 전자 기기
|
JP6110075B2
(ja)
|
2011-05-13 |
2017-04-05 |
株式会社半導体エネルギー研究所 |
表示装置
|
US9105749B2
(en)
|
2011-05-13 |
2015-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
TWI536502B
(zh)
|
2011-05-13 |
2016-06-01 |
半導體能源研究所股份有限公司 |
記憶體電路及電子裝置
|
JP6013773B2
(ja)
|
2011-05-13 |
2016-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
WO2012157472A1
(en)
|
2011-05-13 |
2012-11-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR101952570B1
(ko)
|
2011-05-13 |
2019-02-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
US9048788B2
(en)
|
2011-05-13 |
2015-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising a photoelectric conversion portion
|
SG11201503709SA
(en)
|
2011-05-13 |
2015-07-30 |
Semiconductor Energy Lab |
Semiconductor device
|
US9093539B2
(en)
|
2011-05-13 |
2015-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
WO2012157463A1
(en)
|
2011-05-13 |
2012-11-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5886128B2
(ja)
|
2011-05-13 |
2016-03-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
CN103534950B
(zh)
|
2011-05-16 |
2017-07-04 |
株式会社半导体能源研究所 |
可编程逻辑装置
|
TWI570891B
(zh)
|
2011-05-17 |
2017-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
TWI552150B
(zh)
|
2011-05-18 |
2016-10-01 |
半導體能源研究所股份有限公司 |
半導體儲存裝置
|
US9673823B2
(en)
|
2011-05-18 |
2017-06-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of driving semiconductor device
|
KR101991735B1
(ko)
|
2011-05-19 |
2019-06-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 집적 회로
|
US8709889B2
(en)
|
2011-05-19 |
2014-04-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and manufacturing method thereof
|
KR102093909B1
(ko)
|
2011-05-19 |
2020-03-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
회로 및 회로의 구동 방법
|
US8779799B2
(en)
|
2011-05-19 |
2014-07-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit
|
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(ja)
|
2011-05-19 |
2016-10-12 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US8581625B2
(en)
|
2011-05-19 |
2013-11-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device
|
KR102081792B1
(ko)
|
2011-05-19 |
2020-02-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
연산회로 및 연산회로의 구동방법
|
US8837203B2
(en)
|
2011-05-19 |
2014-09-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TWI557739B
(zh)
|
2011-05-20 |
2016-11-11 |
半導體能源研究所股份有限公司 |
半導體積體電路
|
KR101922397B1
(ko)
|
2011-05-20 |
2018-11-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
WO2012161059A1
(en)
|
2011-05-20 |
2012-11-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
JP6013682B2
(ja)
|
2011-05-20 |
2016-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置の駆動方法
|
JP5886496B2
(ja)
|
2011-05-20 |
2016-03-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6013680B2
(ja)
|
2011-05-20 |
2016-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6030334B2
(ja)
|
2011-05-20 |
2016-11-24 |
株式会社半導体エネルギー研究所 |
記憶装置
|
JP6082189B2
(ja)
|
2011-05-20 |
2017-02-15 |
株式会社半導体エネルギー研究所 |
記憶装置及び信号処理回路
|
TWI614995B
(zh)
|
2011-05-20 |
2018-02-11 |
半導體能源研究所股份有限公司 |
鎖相迴路及使用此鎖相迴路之半導體裝置
|
JP5820336B2
(ja)
|
2011-05-20 |
2015-11-24 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9336845B2
(en)
|
2011-05-20 |
2016-05-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Register circuit including a volatile memory and a nonvolatile memory
|
US8508256B2
(en)
|
2011-05-20 |
2013-08-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor integrated circuit
|
JP5892852B2
(ja)
|
2011-05-20 |
2016-03-23 |
株式会社半導体エネルギー研究所 |
プログラマブルロジックデバイス
|
JP5936908B2
(ja)
|
2011-05-20 |
2016-06-22 |
株式会社半導体エネルギー研究所 |
パリティビット出力回路およびパリティチェック回路
|
TWI559683B
(zh)
|
2011-05-20 |
2016-11-21 |
半導體能源研究所股份有限公司 |
半導體積體電路
|
TWI570719B
(zh)
|
2011-05-20 |
2017-02-11 |
半導體能源研究所股份有限公司 |
儲存裝置及信號處理電路
|
JP6091083B2
(ja)
|
2011-05-20 |
2017-03-08 |
株式会社半導体エネルギー研究所 |
記憶装置
|
TWI501226B
(zh)
|
2011-05-20 |
2015-09-21 |
Semiconductor Energy Lab |
記憶體裝置及驅動記憶體裝置的方法
|
JP5820335B2
(ja)
|
2011-05-20 |
2015-11-24 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP5951351B2
(ja)
|
2011-05-20 |
2016-07-13 |
株式会社半導体エネルギー研究所 |
加算器及び全加算器
|
JP5947099B2
(ja)
|
2011-05-20 |
2016-07-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US20120298998A1
(en)
|
2011-05-25 |
2012-11-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
|
KR101912971B1
(ko)
|
2011-05-26 |
2018-10-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
분주 회로 및 분주 회로를 이용한 반도체 장치
|
US9171840B2
(en)
|
2011-05-26 |
2015-10-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US8610482B2
(en)
|
2011-05-27 |
2013-12-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Trimming circuit and method for driving trimming circuit
|
US9467047B2
(en)
|
2011-05-31 |
2016-10-11 |
Semiconductor Energy Laboratory Co., Ltd. |
DC-DC converter, power source circuit, and semiconductor device
|
JP5912844B2
(ja)
|
2011-05-31 |
2016-04-27 |
株式会社半導体エネルギー研究所 |
プログラマブルロジックデバイス
|
US8669781B2
(en)
|
2011-05-31 |
2014-03-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP5890251B2
(ja)
|
2011-06-08 |
2016-03-22 |
株式会社半導体エネルギー研究所 |
通信方法
|
CN103290371B
(zh)
|
2011-06-08 |
2015-02-25 |
株式会社半导体能源研究所 |
溅射靶材、溅射靶材的制造方法及薄膜形成方法
|
JP2013016243A
(ja)
|
2011-06-09 |
2013-01-24 |
Semiconductor Energy Lab Co Ltd |
記憶装置
|
JP6005401B2
(ja)
|
2011-06-10 |
2016-10-12 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US8958263B2
(en)
|
2011-06-10 |
2015-02-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6104522B2
(ja)
|
2011-06-10 |
2017-03-29 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6009226B2
(ja)
|
2011-06-10 |
2016-10-19 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US8891285B2
(en)
|
2011-06-10 |
2014-11-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
US9299852B2
(en)
|
2011-06-16 |
2016-03-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US8804405B2
(en)
|
2011-06-16 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and semiconductor device
|
TWI557910B
(zh)
|
2011-06-16 |
2016-11-11 |
半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
US8901554B2
(en)
|
2011-06-17 |
2014-12-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including channel formation region including oxide semiconductor
|
KR20130007426A
(ko)
|
2011-06-17 |
2013-01-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 그 제작 방법
|
US9166055B2
(en)
|
2011-06-17 |
2015-10-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
SG11201504734VA
(en)
|
2011-06-17 |
2015-07-30 |
Semiconductor Energy Lab |
Semiconductor device and method for manufacturing the same
|
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(en)
|
2011-06-17 |
2015-08-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Wireless power feeding system
|
US8673426B2
(en)
|
2011-06-29 |
2014-03-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
|
US8878589B2
(en)
|
2011-06-30 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and driving method thereof
|
US9130044B2
(en)
|
2011-07-01 |
2015-09-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US8748886B2
(en)
|
2011-07-08 |
2014-06-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
KR102014876B1
(ko)
|
2011-07-08 |
2019-08-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
US8952377B2
(en)
|
2011-07-08 |
2015-02-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US9496138B2
(en)
|
2011-07-08 |
2016-11-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
|
US9214474B2
(en)
|
2011-07-08 |
2015-12-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
US9385238B2
(en)
|
2011-07-08 |
2016-07-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor using oxide semiconductor
|
US9318506B2
(en)
|
2011-07-08 |
2016-04-19 |
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Semiconductor device and manufacturing method thereof
|
US9490241B2
(en)
|
2011-07-08 |
2016-11-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising a first inverter and a second inverter
|
US8847220B2
(en)
|
2011-07-15 |
2014-09-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
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(ja)
|
2011-07-15 |
2013-02-28 |
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半導体装置
|
US9200952B2
(en)
|
2011-07-15 |
2015-12-01 |
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|
US8836626B2
(en)
|
2011-07-15 |
2014-09-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
US8946812B2
(en)
|
2011-07-21 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US8643008B2
(en)
|
2011-07-22 |
2014-02-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
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(ja)
|
2011-07-22 |
2016-10-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US8716073B2
(en)
|
2011-07-22 |
2014-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for processing oxide semiconductor film and method for manufacturing semiconductor device
|
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(ko)
|
2011-07-22 |
2024-05-09 |
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|
US9012993B2
(en)
|
2011-07-22 |
2015-04-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8994019B2
(en)
|
2011-08-05 |
2015-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8718224B2
(en)
|
2011-08-05 |
2014-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Pulse signal output circuit and shift register
|
JP6006572B2
(ja)
|
2011-08-18 |
2016-10-12 |
株式会社半導体エネルギー研究所 |
半導体装置
|
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(zh)
|
2011-08-19 |
2017-03-21 |
半導體能源研究所股份有限公司 |
半導體裝置的驅動方法
|
JP6128775B2
(ja)
|
2011-08-19 |
2017-05-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
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(ja)
|
2011-08-24 |
2017-04-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
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(zh)
|
2011-08-29 |
2024-03-16 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
US9660092B2
(en)
|
2011-08-31 |
2017-05-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor thin film transistor including oxygen release layer
|
US9252279B2
(en)
|
2011-08-31 |
2016-02-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
JP6016532B2
(ja)
|
2011-09-07 |
2016-10-26 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6050054B2
(ja)
|
2011-09-09 |
2016-12-21 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US8802493B2
(en)
|
2011-09-13 |
2014-08-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of oxide semiconductor device
|
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(ja)
|
2011-09-15 |
2015-12-02 |
株式会社半導体エネルギー研究所 |
パワー絶縁ゲート型電界効果トランジスタ
|
US9082663B2
(en)
|
2011-09-16 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
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(ja)
|
2011-09-16 |
2015-12-16 |
株式会社半導体エネルギー研究所 |
発光装置
|
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(en)
|
2011-09-16 |
2013-03-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US8952379B2
(en)
|
2011-09-16 |
2015-02-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
CN103022012B
(zh)
|
2011-09-21 |
2017-03-01 |
株式会社半导体能源研究所 |
半导体存储装置
|
WO2013042643A1
(en)
|
2011-09-22 |
2013-03-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Photodetector and method for driving photodetector
|
WO2013042562A1
(en)
|
2011-09-22 |
2013-03-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
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(en)
|
2011-09-23 |
2014-09-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Minute transistor
|
US9431545B2
(en)
|
2011-09-23 |
2016-08-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR102108572B1
(ko)
|
2011-09-26 |
2020-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
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(ja)
|
2011-09-28 |
2013-05-09 |
Semiconductor Energy Lab Co Ltd |
シフトレジスタ回路
|
US8716708B2
(en)
|
2011-09-29 |
2014-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR101506303B1
(ko)
|
2011-09-29 |
2015-03-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(de)
|
2011-09-29 |
2024-06-20 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(de)
|
2011-09-29 |
2019-05-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
US8982607B2
(en)
|
2011-09-30 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory element and signal processing circuit
|
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(ja)
|
2011-09-30 |
2015-11-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US20130087784A1
(en)
|
2011-10-05 |
2013-04-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
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(ja)
|
2011-10-07 |
2016-11-09 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の作製方法
|
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(ja)
|
2011-10-07 |
2013-05-16 |
Semiconductor Energy Lab Co Ltd |
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|
US10014068B2
(en)
|
2011-10-07 |
2018-07-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9287405B2
(en)
|
2011-10-13 |
2016-03-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising oxide semiconductor
|
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(ja)
|
2011-10-13 |
2016-11-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US8637864B2
(en)
|
2011-10-13 |
2014-01-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of manufacturing the same
|
US9117916B2
(en)
|
2011-10-13 |
2015-08-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising oxide semiconductor film
|
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(ja)
|
2011-10-13 |
2016-04-27 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9018629B2
(en)
|
2011-10-13 |
2015-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
KR20130040706A
(ko)
|
2011-10-14 |
2013-04-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(de)
|
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2017-06-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
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(ko)
|
2011-10-19 |
2013-04-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
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(zh)
|
2011-10-21 |
2017-01-21 |
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半導體裝置及其製造方法
|
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(ko)
|
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2020-01-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
KR101976212B1
(ko)
|
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2019-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
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(ja)
|
2011-10-24 |
2017-11-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
KR20130046357A
(ko)
|
2011-10-27 |
2013-05-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(ja)
|
2011-10-27 |
2017-02-15 |
株式会社半導体エネルギー研究所 |
半導体装置
|
WO2013061895A1
(en)
|
2011-10-28 |
2013-05-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US8604472B2
(en)
|
2011-11-09 |
2013-12-10 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2011-11-10 |
2016-06-15 |
株式会社半導体エネルギー研究所 |
半導体装置および半導体装置の作製方法
|
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(ja)
|
2011-11-11 |
2017-04-26 |
株式会社半導体エネルギー研究所 |
表示装置
|
US8796682B2
(en)
|
2011-11-11 |
2014-08-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a semiconductor device
|
US9082861B2
(en)
|
2011-11-11 |
2015-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor with oxide semiconductor channel having protective layer
|
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(ja)
|
2011-11-11 |
2017-02-08 |
株式会社半導体エネルギー研究所 |
表示装置の作製方法
|
KR101984739B1
(ko)
|
2011-11-11 |
2019-05-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
신호선 구동 회로 및 액정 표시 장치
|
US8878177B2
(en)
|
2011-11-11 |
2014-11-04 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US10026847B2
(en)
|
2011-11-18 |
2018-07-17 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US8969130B2
(en)
|
2011-11-18 |
2015-03-03 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US8962386B2
(en)
|
2011-11-25 |
2015-02-24 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US8951899B2
(en)
|
2011-11-25 |
2015-02-10 |
Semiconductor Energy Laboratory |
Method for manufacturing semiconductor device
|
US8772094B2
(en)
|
2011-11-25 |
2014-07-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
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(ja)
|
2011-11-25 |
2017-01-11 |
株式会社半導体エネルギー研究所 |
半導体装置、及び液晶表示装置
|
JP6099368B2
(ja)
|
2011-11-25 |
2017-03-22 |
株式会社半導体エネルギー研究所 |
記憶装置
|
US9057126B2
(en)
|
2011-11-29 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing sputtering target and method for manufacturing semiconductor device
|
TWI669760B
(zh)
|
2011-11-30 |
2019-08-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
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(zh)
|
2011-11-30 |
2017-07-11 |
半導體能源研究所股份有限公司 |
半導體顯示裝置
|
US20130137232A1
(en)
|
2011-11-30 |
2013-05-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for forming oxide semiconductor film and method for manufacturing semiconductor device
|
KR102072244B1
(ko)
|
2011-11-30 |
2020-01-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치의 제작 방법
|
CN103137701B
(zh)
|
2011-11-30 |
2018-01-19 |
株式会社半导体能源研究所 |
晶体管及半导体装置
|
US9076871B2
(en)
|
2011-11-30 |
2015-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
TWI621185B
(zh)
|
2011-12-01 |
2018-04-11 |
半導體能源研究所股份有限公司 |
半導體裝置及半導體裝置的製造方法
|
US8981367B2
(en)
|
2011-12-01 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6050662B2
(ja)
|
2011-12-02 |
2016-12-21 |
株式会社半導体エネルギー研究所 |
半導体装置及び半導体装置の作製方法
|
EP2786404A4
(de)
|
2011-12-02 |
2015-07-15 |
Semiconductor Energy Lab |
Halbleiterbauelement und verfahren zu seiner herstellung
|
JP2013137853A
(ja)
|
2011-12-02 |
2013-07-11 |
Semiconductor Energy Lab Co Ltd |
記憶装置および記憶装置の駆動方法
|
US9257422B2
(en)
|
2011-12-06 |
2016-02-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing circuit and method for driving signal processing circuit
|
JP6081171B2
(ja)
|
2011-12-09 |
2017-02-15 |
株式会社半導体エネルギー研究所 |
記憶装置
|
US10002968B2
(en)
|
2011-12-14 |
2018-06-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the same
|
WO2013089115A1
(en)
|
2011-12-15 |
2013-06-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
JP6105266B2
(ja)
|
2011-12-15 |
2017-03-29 |
株式会社半導体エネルギー研究所 |
記憶装置
|
JP2013149953A
(ja)
|
2011-12-20 |
2013-08-01 |
Semiconductor Energy Lab Co Ltd |
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|
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|
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|
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|
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|
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(en)
|
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2014-06-10 |
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|
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(ja)
|
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|
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(zh)
|
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|
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(zh)
|
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|
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(en)
|
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|
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(ja)
|
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2016-10-25 |
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|
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(ja)
|
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2016-12-27 |
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|
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(zh)
|
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|
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(ja)
|
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2016-11-30 |
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|
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|
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|
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(en)
|
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|
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(ko)
|
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|
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(zh)
|
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2017-05-21 |
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|
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|
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|
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|
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|
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|
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2015-03-03 |
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|
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|
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2015-05-26 |
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|
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|
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2015-08-04 |
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|
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(en)
|
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|
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(en)
|
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|
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|
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|
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|
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|
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(en)
|
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2016-08-16 |
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|
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(ja)
|
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|
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(zh)
|
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|
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|
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|
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(en)
|
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2016-12-11 |
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|
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(zh)
|
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2017-11-01 |
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|
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(en)
|
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|
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(ko)
|
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|
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|
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2016-06-07 |
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|
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(en)
|
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2014-12-23 |
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|
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(en)
|
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2018-01-02 |
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|
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(ja)
|
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2017-05-10 |
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|
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(en)
|
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2013-08-15 |
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|
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(en)
|
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2015-08-18 |
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|
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(ja)
|
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2016-08-31 |
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|
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(en)
|
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|
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(ja)
|
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|
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(en)
|
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|
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(en)
|
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2015-03-24 |
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|
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(ja)
|
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2017-06-21 |
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|
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(en)
|
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2016-04-12 |
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|
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(en)
|
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2017-01-24 |
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|
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(ja)
|
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2016-12-14 |
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|
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(en)
|
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2015-03-10 |
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|
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(ja)
|
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2013-09-12 |
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|
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(en)
|
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2016-03-15 |
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|
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(en)
|
2012-03-02 |
2015-11-03 |
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|
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(en)
|
2012-03-02 |
2017-08-15 |
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|
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(ja)
|
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2017-03-22 |
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|
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(ja)
|
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2016-12-14 |
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|
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(en)
|
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2015-03-31 |
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|
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(en)
|
2012-03-08 |
2015-03-17 |
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|
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(zh)
|
2012-03-09 |
2017-09-15 |
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|
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(zh)
|
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2017-03-01 |
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|
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(ko)
|
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|
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(en)
|
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2015-06-16 |
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|
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(ja)
|
2012-03-14 |
2017-07-26 |
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|
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(en)
|
2012-03-14 |
2015-08-25 |
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|
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(en)
|
2012-03-21 |
2017-01-10 |
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|
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(en)
|
2012-03-28 |
2016-04-26 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
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2017-07-26 |
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|
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(en)
|
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2016-05-24 |
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|
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(en)
|
2012-03-29 |
2017-10-10 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2012-03-29 |
2017-05-31 |
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|
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(ja)
|
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2013-11-07 |
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|
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(en)
|
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2013-10-03 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(en)
|
2012-03-30 |
2015-01-27 |
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|
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(en)
|
2012-04-05 |
2015-04-07 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US9711110B2
(en)
|
2012-04-06 |
2017-07-18 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(en)
|
2012-04-06 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(en)
|
2012-04-06 |
2014-12-02 |
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|
US9793444B2
(en)
|
2012-04-06 |
2017-10-17 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2012-04-11 |
2016-08-23 |
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|
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(ja)
|
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|
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(en)
|
2012-04-12 |
2015-12-08 |
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|
US9030232B2
(en)
|
2012-04-13 |
2015-05-12 |
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|
WO2013154195A1
(en)
|
2012-04-13 |
2013-10-17 |
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|
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(ja)
|
2012-04-13 |
2017-01-11 |
株式会社半導体エネルギー研究所 |
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|
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(ja)
|
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2017-05-17 |
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|
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(ja)
|
2012-04-16 |
2017-06-07 |
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|
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(ja)
|
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2017-02-08 |
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|
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(ja)
|
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2016-10-05 |
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|
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(en)
|
2012-04-20 |
2015-05-12 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(en)
|
2012-04-20 |
2015-12-22 |
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|
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(en)
|
2012-04-25 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(en)
|
2012-04-25 |
2016-01-05 |
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|
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(en)
|
2012-04-25 |
2016-01-12 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(en)
|
2012-04-27 |
2014-10-14 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US9285848B2
(en)
|
2012-04-27 |
2016-03-15 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US9331689B2
(en)
|
2012-04-27 |
2016-05-03 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2012-04-27 |
2017-09-20 |
株式会社半導体エネルギー研究所 |
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|
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(ja)
|
2012-04-30 |
2017-03-22 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US9048323B2
(en)
|
2012-04-30 |
2015-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2012-04-30 |
2017-11-08 |
株式会社半導体エネルギー研究所 |
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|
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(en)
|
2012-05-01 |
2017-07-11 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US8860023B2
(en)
|
2012-05-01 |
2014-10-14 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US9007090B2
(en)
|
2012-05-01 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US9261943B2
(en)
|
2012-05-02 |
2016-02-16 |
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|
KR102025722B1
(ko)
|
2012-05-02 |
2019-09-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
US9104395B2
(en)
|
2012-05-02 |
2015-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2012-05-02 |
2017-12-06 |
株式会社半導体エネルギー研究所 |
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|
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(de)
|
2012-05-02 |
2015-03-05 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2012-05-02 |
2017-11-08 |
株式会社半導体エネルギー研究所 |
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|
US8866510B2
(en)
|
2012-05-02 |
2014-10-21 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
KR20130125717A
(ko)
|
2012-05-09 |
2013-11-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
WO2013168624A1
(en)
|
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2013-11-14 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
KR102069158B1
(ko)
|
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2020-01-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(de)
|
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2024-05-08 |
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|
KR102087443B1
(ko)
|
2012-05-11 |
2020-03-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(de)
|
2012-05-11 |
2019-11-07 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(zh)
|
2012-05-16 |
2019-09-01 |
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|
US8929128B2
(en)
|
2012-05-17 |
2015-01-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Storage device and writing method of the same
|
US9817032B2
(en)
|
2012-05-23 |
2017-11-14 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2012-05-25 |
2017-12-20 |
株式会社半導体エネルギー研究所 |
半導体装置の駆動方法
|
KR102059218B1
(ko)
|
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2019-12-24 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(ko)
|
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|
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(ja)
|
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|
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(ja)
|
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|
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(en)
|
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2015-09-29 |
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|
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(ja)
|
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|
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(ko)
|
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|
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(ja)
|
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2017-10-04 |
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|
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(zh)
|
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2017-10-13 |
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|
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(en)
|
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2015-03-31 |
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|
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(ja)
|
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2017-07-05 |
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|
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(en)
|
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2015-06-02 |
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|
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(en)
|
2012-06-01 |
2015-09-15 |
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|
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(en)
|
2012-06-01 |
2018-03-13 |
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|
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(en)
|
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|
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(en)
|
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|
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(ko)
|
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|
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(en)
|
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2014-12-02 |
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|
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(ko)
|
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|
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(en)
|
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|
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(ko)
|
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|
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(zh)
|
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|
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(en)
|
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|
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(ko)
|
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|
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|
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|
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|
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|
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(en)
|
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|
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(ja)
|
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|
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|
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|
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(ko)
|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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(zh)
|
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|
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(ko)
|
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|
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|
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|
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|
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|
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|
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|
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(ja)
|
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2017-05-24 |
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|
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(ja)
|
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|
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|
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|
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(de)
|
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2019-02-27 |
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|
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(en)
|
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|
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(en)
|
2012-08-07 |
2020-02-11 |
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|
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(en)
|
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|
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(ja)
|
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|
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(ja)
|
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2017-10-25 |
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|
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(en)
|
2012-08-10 |
2018-03-27 |
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Semiconductor device and method for manufacturing the same
|
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(en)
|
2012-08-10 |
2016-01-26 |
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|
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(en)
|
2012-08-10 |
2015-01-20 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(zh)
|
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2017-05-01 |
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|
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(zh)
|
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|
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(ko)
|
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|
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(ja)
|
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|
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(ja)
|
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|
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(en)
|
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|
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(ko)
|
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|
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(en)
|
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|
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(de)
|
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|
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(ko)
|
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|
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(ko)
|
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|
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(zh)
|
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2019-04-21 |
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|
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(en)
|
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2015-02-03 |
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|
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(en)
|
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2015-07-30 |
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|
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(de)
|
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2017-03-30 |
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|
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(en)
|
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|
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(en)
|
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|
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(ko)
|
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|
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(zh)
|
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|
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(en)
|
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2015-01-06 |
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|
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(en)
|
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2014-03-27 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(zh)
|
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2020-11-01 |
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|
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(ja)
|
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2018-03-07 |
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|
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(ko)
|
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|
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(zh)
|
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|
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(ja)
|
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2018-07-04 |
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|
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(ja)
|
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2017-01-11 |
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|
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(ja)
|
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2016-11-09 |
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|
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|
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|
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(de)
|
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2015-07-30 |
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|
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(en)
|
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|
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(ja)
|
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2014-05-08 |
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|
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(ja)
|
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2016-07-13 |
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|
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(en)
|
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2014-04-24 |
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|
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(en)
|
2012-10-17 |
2014-04-24 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(zh)
|
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2017-07-11 |
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|
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(ko)
|
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|
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(ko)
|
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|
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(ja)
|
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2017-09-27 |
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|
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(ja)
|
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2018-03-28 |
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|
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(en)
|
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2018-01-09 |
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|
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(zh)
|
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2020-04-11 |
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|
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(ko)
|
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|
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(en)
|
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2014-05-01 |
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|
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(en)
|
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2014-05-01 |
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|
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(ja)
|
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2017-10-25 |
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|
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(en)
|
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2014-05-15 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(zh)
|
2012-11-08 |
2019-02-01 |
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|
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(zh)
|
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2017-11-11 |
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半導體裝置
|
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(ja)
|
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2017-10-25 |
株式会社半導体エネルギー研究所 |
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|
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(zh)
|
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2017-12-11 |
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|
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(zh)
|
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2018-02-01 |
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|
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(zh)
|
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2018-04-01 |
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|
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(ja)
|
2012-11-16 |
2018-04-25 |
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|
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(ja)
|
2012-11-16 |
2018-02-28 |
株式会社半導体エネルギー研究所 |
半導体装置
|
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(zh)
|
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2018-06-21 |
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|
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(en)
|
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2014-06-05 |
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|
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(en)
|
2012-11-28 |
2016-08-09 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(zh)
|
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2022-03-11 |
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|
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(en)
|
2012-11-28 |
2016-02-16 |
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|
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(ja)
|
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2014-07-10 |
Semiconductor Energy Lab Co Ltd |
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|
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(zh)
|
2012-11-30 |
2018-05-21 |
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|
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(ko)
|
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|
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(en)
|
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2017-03-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
US9246011B2
(en)
|
2012-11-30 |
2016-01-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9153649B2
(en)
|
2012-11-30 |
2015-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for evaluating semiconductor device
|
JP6320009B2
(ja)
|
2012-12-03 |
2018-05-09 |
株式会社半導体エネルギー研究所 |
半導体装置及びその作製方法
|
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(ja)
|
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2014-07-24 |
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|
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(ko)
|
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|
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(ko)
|
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2020-05-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
US9577446B2
(en)
|
2012-12-13 |
2017-02-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Power storage system and power storage device storing data for the identifying power storage device
|
TWI611419B
(zh)
|
2012-12-24 |
2018-01-11 |
半導體能源研究所股份有限公司 |
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|
WO2014103901A1
(en)
|
2012-12-25 |
2014-07-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR20220145922A
(ko)
|
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2022-10-31 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(ko)
|
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저항 소자, 표시 장치, 및 전자기기
|
US9905585B2
(en)
|
2012-12-25 |
2018-02-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising capacitor
|
JP2014142986A
(ja)
|
2012-12-26 |
2014-08-07 |
Semiconductor Energy Lab Co Ltd |
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|
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(ko)
|
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반도체 장치, 및 반도체 장치의 제작 방법
|
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(zh)
|
2012-12-28 |
2017-12-01 |
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半導體裝置及半導體裝置的製造方法
|
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(ko)
|
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|
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(ja)
|
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2014-08-07 |
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|
US9316695B2
(en)
|
2012-12-28 |
2016-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6329762B2
(ja)
|
2012-12-28 |
2018-05-23 |
株式会社半導体エネルギー研究所 |
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|
US9391096B2
(en)
|
2013-01-18 |
2016-07-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
TWI614813B
(zh)
|
2013-01-21 |
2018-02-11 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
US9190172B2
(en)
|
2013-01-24 |
2015-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6223198B2
(ja)
|
2013-01-24 |
2017-11-01 |
株式会社半導体エネルギー研究所 |
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|
US9466725B2
(en)
|
2013-01-24 |
2016-10-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
TWI619010B
(zh)
|
2013-01-24 |
2018-03-21 |
半導體能源研究所股份有限公司 |
半導體裝置
|
JP5807076B2
(ja)
|
2013-01-24 |
2015-11-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US8981374B2
(en)
|
2013-01-30 |
2015-03-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9105658B2
(en)
|
2013-01-30 |
2015-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for processing oxide semiconductor layer
|
US9076825B2
(en)
|
2013-01-30 |
2015-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the semiconductor device
|
KR102112367B1
(ko)
|
2013-02-12 |
2020-05-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
TWI618252B
(zh)
|
2013-02-12 |
2018-03-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
US9190527B2
(en)
|
2013-02-13 |
2015-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of semiconductor device
|
US9231111B2
(en)
|
2013-02-13 |
2016-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2014125979A1
(en)
|
2013-02-13 |
2014-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device and semiconductor device
|
US8952723B2
(en)
|
2013-02-13 |
2015-02-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device and semiconductor device
|
US9318484B2
(en)
|
2013-02-20 |
2016-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TWI611566B
(zh)
|
2013-02-25 |
2018-01-11 |
半導體能源研究所股份有限公司 |
顯示裝置和電子裝置
|
US9293544B2
(en)
|
2013-02-26 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having buried channel structure
|
TWI651839B
(zh)
|
2013-02-27 |
2019-02-21 |
半導體能源研究所股份有限公司 |
半導體裝置、驅動電路及顯示裝置
|
US9373711B2
(en)
|
2013-02-27 |
2016-06-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TWI612321B
(zh)
|
2013-02-27 |
2018-01-21 |
半導體能源研究所股份有限公司 |
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|
KR102238682B1
(ko)
|
2013-02-28 |
2021-04-08 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치와 그 제작 방법
|
JP2014195243A
(ja)
|
2013-02-28 |
2014-10-09 |
Semiconductor Energy Lab Co Ltd |
半導体装置
|
JP6141777B2
(ja)
|
2013-02-28 |
2017-06-07 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP2014195241A
(ja)
|
2013-02-28 |
2014-10-09 |
Semiconductor Energy Lab Co Ltd |
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|
JP2014195060A
(ja)
|
2013-03-01 |
2014-10-09 |
Semiconductor Energy Lab Co Ltd |
センサ回路及びセンサ回路を用いた半導体装置
|
JP6250883B2
(ja)
|
2013-03-01 |
2017-12-20 |
株式会社半導体エネルギー研究所 |
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|
KR102153110B1
(ko)
|
2013-03-06 |
2020-09-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체막 및 반도체 장치
|
US9269315B2
(en)
|
2013-03-08 |
2016-02-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Driving method of semiconductor device
|
US8947121B2
(en)
|
2013-03-12 |
2015-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Programmable logic device
|
TWI644433B
(zh)
|
2013-03-13 |
2018-12-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
JP2014199709A
(ja)
|
2013-03-14 |
2014-10-23 |
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記憶装置、半導体装置
|
KR102290247B1
(ko)
|
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가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치와 그 제작 방법
|
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(ja)
|
2013-03-14 |
2018-03-20 |
株式会社半導体エネルギー研究所 |
半導体装置
|
KR20150128823A
(ko)
|
2013-03-14 |
2015-11-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 구동 방법 및 반도체 장치
|
WO2014142043A1
(en)
|
2013-03-14 |
2014-09-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for driving semiconductor device and semiconductor device
|
JP6283237B2
(ja)
|
2013-03-14 |
2018-02-21 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9294075B2
(en)
|
2013-03-14 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TWI722545B
(zh)
|
2013-03-15 |
2021-03-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
US9786350B2
(en)
|
2013-03-18 |
2017-10-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
US9153650B2
(en)
|
2013-03-19 |
2015-10-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor
|
US9577107B2
(en)
|
2013-03-19 |
2017-02-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and method for forming oxide semiconductor film
|
JP6093726B2
(ja)
|
2013-03-22 |
2017-03-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9007092B2
(en)
|
2013-03-22 |
2015-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6355374B2
(ja)
|
2013-03-22 |
2018-07-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
WO2014157019A1
(en)
|
2013-03-25 |
2014-10-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6272713B2
(ja)
|
2013-03-25 |
2018-01-31 |
株式会社半導体エネルギー研究所 |
プログラマブルロジックデバイス及び半導体装置
|
US10347769B2
(en)
|
2013-03-25 |
2019-07-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor with multi-layer source/drain electrodes
|
JP6376788B2
(ja)
|
2013-03-26 |
2018-08-22 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
JP6316630B2
(ja)
|
2013-03-26 |
2018-04-25 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9608122B2
(en)
|
2013-03-27 |
2017-03-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
JP2014209209A
(ja)
|
2013-03-28 |
2014-11-06 |
株式会社半導体エネルギー研究所 |
表示装置
|
US9368636B2
(en)
|
2013-04-01 |
2016-06-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
|
JP6300589B2
(ja)
|
2013-04-04 |
2018-03-28 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US9112460B2
(en)
|
2013-04-05 |
2015-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing device
|
JP6224338B2
(ja)
|
2013-04-11 |
2017-11-01 |
株式会社半導体エネルギー研究所 |
半導体装置、表示装置及び半導体装置の作製方法
|
JP6198434B2
(ja)
|
2013-04-11 |
2017-09-20 |
株式会社半導体エネルギー研究所 |
表示装置及び電子機器
|
TWI620324B
(zh)
|
2013-04-12 |
2018-04-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
US10304859B2
(en)
|
2013-04-12 |
2019-05-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having an oxide film on an oxide semiconductor film
|
JP6280794B2
(ja)
|
2013-04-12 |
2018-02-14 |
株式会社半導体エネルギー研究所 |
半導体装置及びその駆動方法
|
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(ja)
|
2013-04-19 |
2018-05-30 |
株式会社半導体エネルギー研究所 |
記憶装置及び半導体装置
|
JP6456598B2
(ja)
|
2013-04-19 |
2019-01-23 |
株式会社半導体エネルギー研究所 |
表示装置
|
US9915848B2
(en)
|
2013-04-19 |
2018-03-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
US9893192B2
(en)
|
2013-04-24 |
2018-02-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2014175296A1
(en)
|
2013-04-24 |
2014-10-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
JP6396671B2
(ja)
|
2013-04-26 |
2018-09-26 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6401483B2
(ja)
|
2013-04-26 |
2018-10-10 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
TWI644434B
(zh)
|
2013-04-29 |
2018-12-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
TWI631711B
(zh)
|
2013-05-01 |
2018-08-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
KR102222344B1
(ko)
|
2013-05-02 |
2021-03-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
US9882058B2
(en)
|
2013-05-03 |
2018-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9231002B2
(en)
|
2013-05-03 |
2016-01-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and electronic device
|
CN105190902B
(zh)
|
2013-05-09 |
2019-01-29 |
株式会社半导体能源研究所 |
半导体装置及其制造方法
|
US9704894B2
(en)
|
2013-05-10 |
2017-07-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device including pixel electrode including oxide
|
US9246476B2
(en)
|
2013-05-10 |
2016-01-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Driver circuit
|
TWI621337B
(zh)
|
2013-05-14 |
2018-04-11 |
半導體能源研究所股份有限公司 |
信號處理裝置
|
US9312392B2
(en)
|
2013-05-16 |
2016-04-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TWI627751B
(zh)
|
2013-05-16 |
2018-06-21 |
半導體能源研究所股份有限公司 |
半導體裝置
|
TWI618058B
(zh)
|
2013-05-16 |
2018-03-11 |
半導體能源研究所股份有限公司 |
半導體裝置
|
TWI809225B
(zh)
|
2013-05-16 |
2023-07-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
US9454923B2
(en)
|
2013-05-17 |
2016-09-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TWI638519B
(zh)
|
2013-05-17 |
2018-10-11 |
半導體能源研究所股份有限公司 |
可程式邏輯裝置及半導體裝置
|
US10032872B2
(en)
|
2013-05-17 |
2018-07-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
|
US9209795B2
(en)
|
2013-05-17 |
2015-12-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Signal processing device and measuring method
|
US9754971B2
(en)
|
2013-05-18 |
2017-09-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9293599B2
(en)
|
2013-05-20 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR102442752B1
(ko)
|
2013-05-20 |
2022-09-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
DE102014019794B4
(de)
|
2013-05-20 |
2024-10-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
TWI664731B
(zh)
|
2013-05-20 |
2019-07-01 |
半導體能源研究所股份有限公司 |
半導體裝置
|
US9647125B2
(en)
|
2013-05-20 |
2017-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
DE112014002485T5
(de)
|
2013-05-20 |
2016-03-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung
|
US9343579B2
(en)
|
2013-05-20 |
2016-05-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR20160009626A
(ko)
|
2013-05-21 |
2016-01-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물 반도체막 및 그 형성 방법
|
US10416504B2
(en)
|
2013-05-21 |
2019-09-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device
|
JP6400336B2
(ja)
|
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2018-10-03 |
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|
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(ja)
|
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|
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(ja)
|
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|
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(en)
|
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|
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(zh)
|
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|
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(zh)
|
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|
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(en)
|
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|
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(zh)
|
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|
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(ja)
|
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|
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(zh)
|
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|
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(en)
|
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|
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(zh)
|
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2018-08-21 |
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|
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|
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|
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(ko)
|
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|
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(zh)
|
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|
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(en)
|
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|
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|
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|
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|
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|
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(en)
|
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|
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(en)
|
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|
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(ja)
|
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|
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|
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|
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|
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|
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|
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|
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(zh)
*
|
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|
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|
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|
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(en)
|
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|
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(en)
|
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|
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(zh)
|
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|
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|
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|
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(en)
|
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|
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(zh)
|
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|
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(ja)
|
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|
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(ja)
|
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|
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(en)
|
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|
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(en)
|
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2016-11-15 |
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|
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(zh)
|
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2018-09-11 |
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|
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(ja)
|
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|
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(ja)
|
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|
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(en)
|
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|
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(en)
|
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2017-03-21 |
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|
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(ja)
|
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|
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(en)
|
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2016-06-21 |
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|
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(zh)
|
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2019-06-21 |
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|
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(ko)
|
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|
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(ko)
|
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|
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(en)
|
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2016-09-13 |
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|
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(zh)
|
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|
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(ja)
*
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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2016-06-07 |
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|
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(ja)
|
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2018-11-21 |
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|
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(ja)
|
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|
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(en)
|
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|
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(en)
|
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2018-06-26 |
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|
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(en)
|
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2017-03-28 |
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|
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(ja)
|
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2018-06-20 |
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半導体装置の作製方法
|
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(ja)
|
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2018-10-10 |
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|
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(ko)
|
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|
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(en)
|
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2017-03-07 |
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|
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(zh)
|
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|
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(en)
|
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|
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(en)
|
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2016-02-23 |
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|
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(en)
|
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2016-10-04 |
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|
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(zh)
|
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|
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(en)
|
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|
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(en)
|
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2015-03-19 |
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|
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(ja)
|
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2015-04-23 |
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|
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(en)
|
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2018-02-06 |
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|
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(en)
|
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2016-02-23 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
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2018-06-27 |
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|
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(zh)
|
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2019-11-21 |
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|
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(ja)
|
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|
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(ja)
|
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2019-09-04 |
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|
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(en)
|
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2016-07-19 |
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|
US9425217B2
(en)
|
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2016-08-23 |
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|
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(ja)
|
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2018-08-29 |
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|
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(en)
|
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2017-10-24 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2013-09-27 |
2018-09-19 |
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半導体装置
|
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(ja)
|
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2019-09-25 |
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|
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(ja)
|
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2018-09-05 |
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半導体装置
|
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(zh)
|
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2021-10-01 |
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|
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(en)
|
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2016-03-22 |
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|
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(ja)
|
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2019-10-16 |
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|
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(zh)
|
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2018-04-11 |
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|
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(zh)
|
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2018-11-21 |
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|
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(de)
|
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2015-05-07 |
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|
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(ja)
|
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2015-10-08 |
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表示装置
|
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(ko)
|
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2016-06-28 |
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|
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(ko)
|
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|
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(en)
|
2013-10-22 |
2016-09-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor thin film transistor with reduced impurity diffusion
|
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(ja)
|
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2015-06-11 |
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|
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(en)
|
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2015-04-30 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US9583516B2
(en)
|
2013-10-25 |
2017-02-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
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(ja)
|
2013-10-31 |
2019-01-23 |
株式会社半導体エネルギー研究所 |
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|
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(en)
|
2013-11-06 |
2017-03-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the semiconductor device
|
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(ja)
|
2013-11-07 |
2018-12-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
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(ja)
|
2013-11-07 |
2019-03-06 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9385054B2
(en)
|
2013-11-08 |
2016-07-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Data processing device and manufacturing method thereof
|
JP2015118724A
(ja)
|
2013-11-13 |
2015-06-25 |
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半導体装置及び半導体装置の駆動方法
|
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(ja)
|
2013-11-22 |
2018-11-21 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6393590B2
(ja)
|
2013-11-22 |
2018-09-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6486660B2
(ja)
|
2013-11-27 |
2019-03-20 |
株式会社半導体エネルギー研究所 |
表示装置
|
JP2016001712A
(ja)
|
2013-11-29 |
2016-01-07 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US20150155313A1
(en)
|
2013-11-29 |
2015-06-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9882014B2
(en)
|
2013-11-29 |
2018-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
KR102361966B1
(ko)
|
2013-12-02 |
2022-02-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(de)
|
2013-12-02 |
2024-08-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Anzeigevorrichtung
|
JP6496132B2
(ja)
|
2013-12-02 |
2019-04-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9991392B2
(en)
|
2013-12-03 |
2018-06-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
JP2016027597A
(ja)
|
2013-12-06 |
2016-02-18 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9806098B2
(en)
|
2013-12-10 |
2017-10-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device
|
US9349751B2
(en)
|
2013-12-12 |
2016-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6537264B2
(ja)
|
2013-12-12 |
2019-07-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
TWI642186B
(zh)
|
2013-12-18 |
2018-11-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
TWI666770B
(zh)
|
2013-12-19 |
2019-07-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
US9379192B2
(en)
|
2013-12-20 |
2016-06-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6444714B2
(ja)
|
2013-12-20 |
2018-12-26 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
WO2015097586A1
(en)
|
2013-12-25 |
2015-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6402017B2
(ja)
|
2013-12-26 |
2018-10-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
WO2015097596A1
(en)
|
2013-12-26 |
2015-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR20160102295A
(ko)
|
2013-12-26 |
2016-08-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
US9960280B2
(en)
|
2013-12-26 |
2018-05-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TWI637484B
(zh)
|
2013-12-26 |
2018-10-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
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(ja)
|
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2019-03-20 |
株式会社半導体エネルギー研究所 |
半導体装置
|
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(ko)
|
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2023-05-08 |
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|
US9349418B2
(en)
|
2013-12-27 |
2016-05-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for driving the same
|
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(ja)
|
2013-12-27 |
2019-04-24 |
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|
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(ko)
|
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|
US9397149B2
(en)
|
2013-12-27 |
2016-07-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9577110B2
(en)
|
2013-12-27 |
2017-02-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
|
JP6446258B2
(ja)
|
2013-12-27 |
2018-12-26 |
株式会社半導体エネルギー研究所 |
トランジスタ
|
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(ja)
|
2013-12-27 |
2019-04-24 |
株式会社半導体エネルギー研究所 |
液晶表示装置
|
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(ja)
|
2014-01-09 |
2018-12-26 |
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装置
|
US9300292B2
(en)
|
2014-01-10 |
2016-03-29 |
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Circuit including transistor
|
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(en)
|
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2016-07-26 |
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|
US9379713B2
(en)
|
2014-01-17 |
2016-06-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Data processing device and driving method thereof
|
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(ko)
|
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2021-09-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(en)
|
2014-01-28 |
2015-08-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9929044B2
(en)
|
2014-01-30 |
2018-03-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
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(zh)
|
2014-02-05 |
2019-07-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置、模組及電子裝置
|
US9929279B2
(en)
|
2014-02-05 |
2018-03-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US9443876B2
(en)
|
2014-02-05 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
|
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(ja)
|
2014-02-05 |
2019-06-05 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9721968B2
(en)
|
2014-02-06 |
2017-08-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic appliance
|
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(ja)
|
2014-02-07 |
2018-11-07 |
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半導体装置
|
WO2015118436A1
(en)
|
2014-02-07 |
2015-08-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, device, and electronic device
|
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(zh)
|
2014-02-07 |
2019-05-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
US9479175B2
(en)
|
2014-02-07 |
2016-10-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
JP6545970B2
(ja)
|
2014-02-07 |
2019-07-17 |
株式会社半導体エネルギー研究所 |
装置
|
JP2015165226A
(ja)
|
2014-02-07 |
2015-09-17 |
株式会社半導体エネルギー研究所 |
装置
|
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(ko)
|
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2022-05-02 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(ko)
|
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2021-10-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
산화물, 반도체 장치, 모듈, 및 전자 장치
|
US9817040B2
(en)
|
2014-02-21 |
2017-11-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Measuring method of low off-state current of transistor
|
JP2015172991A
(ja)
|
2014-02-21 |
2015-10-01 |
株式会社半導体エネルギー研究所 |
半導体装置、電子部品、及び電子機器
|
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(zh)
|
2014-02-21 |
2024-07-12 |
株式会社半导体能源研究所 |
半导体膜、晶体管、半导体装置、显示装置以及电子设备
|
US9294096B2
(en)
|
2014-02-28 |
2016-03-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US10074576B2
(en)
|
2014-02-28 |
2018-09-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device
|
US9564535B2
(en)
|
2014-02-28 |
2017-02-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
|
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(ja)
|
2014-02-28 |
2019-07-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
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(zh)
|
2014-02-28 |
2021-01-15 |
株式会社半导体能源研究所 |
半导体装置的制造方法
|
JP6474280B2
(ja)
|
2014-03-05 |
2019-02-27 |
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半導体装置
|
KR20150104518A
(ko)
|
2014-03-05 |
2015-09-15 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
레벨 시프터 회로
|
US10096489B2
(en)
|
2014-03-06 |
2018-10-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US9397637B2
(en)
|
2014-03-06 |
2016-07-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Voltage controlled oscillator, semiconductor device, and electronic device
|
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(ja)
|
2014-03-06 |
2019-12-25 |
株式会社半導体エネルギー研究所 |
半導体装置の駆動方法
|
US9537478B2
(en)
|
2014-03-06 |
2017-01-03 |
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Semiconductor device
|
US9443872B2
(en)
|
2014-03-07 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2014-03-07 |
2018-12-19 |
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半導体装置及びその駆動方法、並びに電子機器
|
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(ja)
|
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2019-11-20 |
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半導体装置
|
WO2015132697A1
(en)
|
2014-03-07 |
2015-09-11 |
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|
US9711536B2
(en)
|
2014-03-07 |
2017-07-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic device
|
US9419622B2
(en)
|
2014-03-07 |
2016-08-16 |
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|
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(ko)
|
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가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(ja)
|
2014-03-07 |
2019-10-02 |
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半導体装置
|
WO2015132694A1
(en)
|
2014-03-07 |
2015-09-11 |
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Touch sensor, touch panel, and manufacturing method of touch panel
|
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(ko)
|
2014-03-12 |
2016-11-18 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
US9640669B2
(en)
|
2014-03-13 |
2017-05-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
|
WO2015136418A1
(en)
|
2014-03-13 |
2015-09-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device
|
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(ja)
|
2014-03-13 |
2020-04-08 |
株式会社半導体エネルギー研究所 |
半導体装置の駆動方法
|
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(ja)
|
2014-03-13 |
2019-07-10 |
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プログラマブルロジックデバイスの動作方法
|
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(ja)
|
2014-03-13 |
2019-08-14 |
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半導体装置
|
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(ja)
|
2014-03-13 |
2019-06-05 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9324747B2
(en)
|
2014-03-13 |
2016-04-26 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ja)
|
2014-03-14 |
2015-10-29 |
株式会社半導体エネルギー研究所 |
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|
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(en)
|
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2016-09-29 |
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|
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(ja)
|
2014-03-14 |
2019-08-14 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
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(en)
|
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2016-03-29 |
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|
US9887212B2
(en)
|
2014-03-14 |
2018-02-06 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(en)
|
2014-03-18 |
2016-09-29 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and manufacturing method thereof
|
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(ja)
|
2014-03-18 |
2019-05-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9887291B2
(en)
|
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2018-02-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
|
US9842842B2
(en)
|
2014-03-19 |
2017-12-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor memory device and semiconductor device and electronic device having the same
|
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(zh)
|
2014-03-20 |
2019-04-21 |
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半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
|
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(ja)
|
2014-03-20 |
2019-04-03 |
株式会社半導体エネルギー研究所 |
半導体装置、電子部品、及び電子機器
|
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(zh)
|
2014-03-28 |
2020-09-15 |
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晶体管以及半导体装置
|
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(ja)
|
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2019-03-20 |
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半導体装置、電子部品
|
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(zh)
|
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2022-06-11 |
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|
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(ja)
|
2014-04-11 |
2020-01-29 |
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|
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(ja)
|
2014-04-11 |
2019-07-10 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9674470B2
(en)
|
2014-04-11 |
2017-06-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for driving semiconductor device, and method for driving electronic device
|
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(zh)
|
2014-04-11 |
2019-01-01 |
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|
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(de)
|
2014-04-18 |
2021-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(ko)
|
2014-04-18 |
2023-03-20 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(ko)
|
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2021-10-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
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(ja)
|
2014-04-22 |
2019-11-27 |
株式会社半導体エネルギー研究所 |
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|
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(ko)
|
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가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
US9780226B2
(en)
|
2014-04-25 |
2017-10-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
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(ja)
|
2014-04-25 |
2019-02-13 |
株式会社半導体エネルギー研究所 |
入出力装置
|
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(ko)
|
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|
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(zh)
|
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2018-12-01 |
日商半導體能源研究所股份有限公司 |
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|
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(en)
|
2014-04-30 |
2018-08-07 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
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(zh)
|
2014-05-02 |
2019-12-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
US10656799B2
(en)
|
2014-05-02 |
2020-05-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and operation method thereof
|
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(ja)
|
2014-05-07 |
2019-07-03 |
株式会社半導体エネルギー研究所 |
半導体装置
|
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(ja)
|
2014-05-09 |
2020-02-26 |
株式会社半導体エネルギー研究所 |
表示補正回路及び表示装置
|
CN103972300B
(zh)
*
|
2014-05-14 |
2015-09-30 |
京东方科技集团股份有限公司 |
一种薄膜晶体管及其制备方法、阵列基板、显示装置
|
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(ko)
|
2014-05-15 |
2021-11-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 이 반도체 장치를 포함하는 표시 장치
|
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(ja)
|
2014-05-16 |
2015-12-24 |
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半導体基板および半導体装置の作製方法
|
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(ja)
|
2014-05-16 |
2019-11-27 |
株式会社半導体エネルギー研究所 |
撮像装置、及び監視装置
|
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(ja)
|
2014-05-22 |
2019-09-25 |
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半導体装置、健康管理システム
|
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(ja)
|
2014-05-23 |
2019-12-04 |
株式会社半導体エネルギー研究所 |
記憶装置及び電子機器
|
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(zh)
|
2014-05-23 |
2019-09-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
US10020403B2
(en)
|
2014-05-27 |
2018-07-10 |
Semiconductor Energy Laboratory Co., Ltd. |
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|
US9874775B2
(en)
|
2014-05-28 |
2018-01-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Liquid crystal display device and electronic device
|
JP6525722B2
(ja)
|
2014-05-29 |
2019-06-05 |
株式会社半導体エネルギー研究所 |
記憶装置、電子部品、及び電子機器
|
JP6653129B2
(ja)
|
2014-05-29 |
2020-02-26 |
株式会社半導体エネルギー研究所 |
記憶装置
|
KR102418666B1
(ko)
|
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2022-07-11 |
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촬상 소자, 전자 기기, 촬상 소자의 구동 방법, 및 전자 기기의 구동 방법
|
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(ko)
|
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반도체 장치, 반도체 장치의 제작 방법 및 전자 기기
|
KR20150138026A
(ko)
|
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2015-12-09 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
TWI646658B
(zh)
|
2014-05-30 |
2019-01-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
JP6537892B2
(ja)
|
2014-05-30 |
2019-07-03 |
株式会社半導体エネルギー研究所 |
半導体装置、及び電子機器
|
US9831238B2
(en)
|
2014-05-30 |
2017-11-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including insulating film having opening portion and conductive film in the opening portion
|
TWI663726B
(zh)
|
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2019-06-21 |
Semiconductor Energy Laboratory Co., Ltd. |
半導體裝置、模組及電子裝置
|
JP6538426B2
(ja)
|
2014-05-30 |
2019-07-03 |
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半導体装置及び電子機器
|
KR102259172B1
(ko)
|
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반도체 장치, 이의 제조 방법, 및 전자 장치
|
WO2015181997A1
(en)
|
2014-05-30 |
2015-12-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
JP2016015475A
(ja)
*
|
2014-06-13 |
2016-01-28 |
株式会社半導体エネルギー研究所 |
半導体装置、及び電子機器
|
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(ko)
|
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가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 및 반도체 장치를 포함하는 전자 기기
|
KR102344782B1
(ko)
|
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2021-12-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
입력 장치 및 입출력 장치
|
TWI663733B
(zh)
|
2014-06-18 |
2019-06-21 |
日商半導體能源研究所股份有限公司 |
電晶體及半導體裝置
|
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(zh)
|
2014-06-20 |
2019-07-21 |
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半導體裝置以及包括該半導體裝置的顯示裝置
|
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(ko)
|
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2015-12-31 |
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반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기
|
US9722090B2
(en)
|
2014-06-23 |
2017-08-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including first gate oxide semiconductor film, and second gate
|
JP6545541B2
(ja)
|
2014-06-25 |
2019-07-17 |
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撮像装置、監視装置、及び電子機器
|
US10002971B2
(en)
|
2014-07-03 |
2018-06-19 |
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Semiconductor device and display device including the semiconductor device
|
US9647129B2
(en)
|
2014-07-04 |
2017-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US9461179B2
(en)
|
2014-07-11 |
2016-10-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
|
KR20220069118A
(ko)
|
2014-07-15 |
2022-05-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치와 그 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
|
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(ja)
|
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2016-03-03 |
株式会社半導体エネルギー研究所 |
半導体装置、撮像装置及び電子機器
|
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(ja)
|
2014-07-18 |
2019-09-25 |
株式会社半導体エネルギー研究所 |
表示システム
|
US9312280B2
(en)
|
2014-07-25 |
2016-04-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
WO2016012893A1
(en)
|
2014-07-25 |
2016-01-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Oscillator circuit and semiconductor device including the same
|
US10115830B2
(en)
|
2014-07-29 |
2018-10-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method thereof, and electronic device
|
CN106537486B
(zh)
|
2014-07-31 |
2020-09-15 |
株式会社半导体能源研究所 |
显示装置及电子装置
|
JP6555956B2
(ja)
|
2014-07-31 |
2019-08-07 |
株式会社半導体エネルギー研究所 |
撮像装置、監視装置、及び電子機器
|
US9705004B2
(en)
|
2014-08-01 |
2017-07-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
JP6739150B2
(ja)
|
2014-08-08 |
2020-08-12 |
株式会社半導体エネルギー研究所 |
半導体装置、発振回路、位相同期回路及び電子機器
|
JP6553444B2
(ja)
|
2014-08-08 |
2019-07-31 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6652342B2
(ja)
|
2014-08-08 |
2020-02-19 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US10147747B2
(en)
|
2014-08-21 |
2018-12-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method thereof, and electronic device
|
US10032888B2
(en)
|
2014-08-22 |
2018-07-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
|
US10559667B2
(en)
|
2014-08-25 |
2020-02-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for measuring current of semiconductor device
|
KR102509203B1
(ko)
|
2014-08-29 |
2023-03-14 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치 및 전자 기기
|
WO2016034983A1
(en)
|
2014-09-02 |
2016-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
KR102329498B1
(ko)
|
2014-09-04 |
2021-11-19 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치
|
US9766517B2
(en)
|
2014-09-05 |
2017-09-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and display module
|
JP2016066065A
(ja)
|
2014-09-05 |
2016-04-28 |
株式会社半導体エネルギー研究所 |
表示装置、および電子機器
|
US9722091B2
(en)
|
2014-09-12 |
2017-08-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
JP6676316B2
(ja)
|
2014-09-12 |
2020-04-08 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
KR20160034200A
(ko)
|
2014-09-19 |
2016-03-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
JP2016066788A
(ja)
|
2014-09-19 |
2016-04-28 |
株式会社半導体エネルギー研究所 |
半導体膜の評価方法および半導体装置の作製方法
|
US9401364B2
(en)
|
2014-09-19 |
2016-07-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic device
|
DE112015004272T5
(de)
|
2014-09-19 |
2017-06-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Herstellungsverfahren der Halbleitervorrichtung
|
US10071904B2
(en)
|
2014-09-25 |
2018-09-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display module, and electronic device
|
WO2016046685A1
(en)
|
2014-09-26 |
2016-03-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device
|
US10170055B2
(en)
|
2014-09-26 |
2019-01-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and driving method thereof
|
JP6633330B2
(ja)
|
2014-09-26 |
2020-01-22 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP2016111677A
(ja)
|
2014-09-26 |
2016-06-20 |
株式会社半導体エネルギー研究所 |
半導体装置、無線センサ、及び電子機器
|
US9450581B2
(en)
|
2014-09-30 |
2016-09-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit, semiconductor device, electronic component, and electronic device
|
KR102481037B1
(ko)
|
2014-10-01 |
2022-12-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
배선층 및 그 제작 방법
|
WO2016055894A1
(en)
|
2014-10-06 |
2016-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
US9698170B2
(en)
|
2014-10-07 |
2017-07-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display module, and electronic device
|
WO2016055903A1
(en)
|
2014-10-10 |
2016-04-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, circuit board, and electronic device
|
KR20220119177A
(ko)
|
2014-10-10 |
2022-08-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
논리 회로, 처리 유닛, 전자 부품, 및 전자 기기
|
US9991393B2
(en)
|
2014-10-16 |
2018-06-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, module, and electronic device
|
JP6645793B2
(ja)
|
2014-10-17 |
2020-02-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
WO2016063159A1
(en)
|
2014-10-20 |
2016-04-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof, module, and electronic device
|
US10068927B2
(en)
|
2014-10-23 |
2018-09-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display module, and electronic device
|
JP6615565B2
(ja)
|
2014-10-24 |
2019-12-04 |
株式会社半導体エネルギー研究所 |
半導体装置
|
TWI652362B
(zh)
|
2014-10-28 |
2019-03-01 |
日商半導體能源研究所股份有限公司 |
氧化物及其製造方法
|
WO2016067144A1
(en)
|
2014-10-28 |
2016-05-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, manufacturing method of display device, and electronic device
|
US9704704B2
(en)
|
2014-10-28 |
2017-07-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the same
|
JP6780927B2
(ja)
|
2014-10-31 |
2020-11-04 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US10680017B2
(en)
|
2014-11-07 |
2020-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
|
US9584707B2
(en)
|
2014-11-10 |
2017-02-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
US9548327B2
(en)
|
2014-11-10 |
2017-01-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device having a selenium containing photoelectric conversion layer
|
US9438234B2
(en)
|
2014-11-21 |
2016-09-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit and semiconductor device including logic circuit
|
TWI766298B
(zh)
|
2014-11-21 |
2022-06-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置
|
JP6563313B2
(ja)
|
2014-11-21 |
2019-08-21 |
株式会社半導体エネルギー研究所 |
半導体装置、及び電子機器
|
TWI711165B
(zh)
|
2014-11-21 |
2020-11-21 |
日商半導體能源研究所股份有限公司 |
半導體裝置及電子裝置
|
US20160155759A1
(en)
|
2014-11-28 |
2016-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the same
|
KR102524983B1
(ko)
|
2014-11-28 |
2023-04-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 모듈, 및 전자 기기
|
JP6647841B2
(ja)
|
2014-12-01 |
2020-02-14 |
株式会社半導体エネルギー研究所 |
酸化物の作製方法
|
JP6613116B2
(ja)
|
2014-12-02 |
2019-11-27 |
株式会社半導体エネルギー研究所 |
半導体装置、及び半導体装置の作製方法
|
JP6667267B2
(ja)
|
2014-12-08 |
2020-03-18 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6647846B2
(ja)
|
2014-12-08 |
2020-02-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6689062B2
(ja)
|
2014-12-10 |
2020-04-28 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9773832B2
(en)
|
2014-12-10 |
2017-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
JP6833315B2
(ja)
|
2014-12-10 |
2021-02-24 |
株式会社半導体エネルギー研究所 |
半導体装置、及び電子機器
|
WO2016092427A1
(en)
|
2014-12-10 |
2016-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
WO2016092416A1
(en)
|
2014-12-11 |
2016-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, memory device, and electronic device
|
JP6676354B2
(ja)
|
2014-12-16 |
2020-04-08 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP2016116220A
(ja)
|
2014-12-16 |
2016-06-23 |
株式会社半導体エネルギー研究所 |
半導体装置、及び電子機器
|
KR102581808B1
(ko)
|
2014-12-18 |
2023-09-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 센서 장치, 및 전자 기기
|
KR20170101233A
(ko)
|
2014-12-26 |
2017-09-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
스퍼터링용 타깃의 제작 방법
|
TWI686874B
(zh)
|
2014-12-26 |
2020-03-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法
|
US10396210B2
(en)
|
2014-12-26 |
2019-08-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device
|
WO2016108122A1
(en)
|
2014-12-29 |
2016-07-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device having semiconductor device
|
US10522693B2
(en)
|
2015-01-16 |
2019-12-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device and electronic device
|
US9443564B2
(en)
|
2015-01-26 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic device
|
JP6857447B2
(ja)
|
2015-01-26 |
2021-04-14 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9954112B2
(en)
|
2015-01-26 |
2018-04-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US9647132B2
(en)
|
2015-01-30 |
2017-05-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and memory device
|
TWI792065B
(zh)
|
2015-01-30 |
2023-02-11 |
日商半導體能源研究所股份有限公司 |
成像裝置及電子裝置
|
WO2016125049A1
(en)
|
2015-02-02 |
2016-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide and manufacturing method thereof
|
KR20240090743A
(ko)
|
2015-02-04 |
2024-06-21 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 반도체 장치의 제조 방법, 또는 반도체 장치를 포함하는 표시 장치
|
US9660100B2
(en)
|
2015-02-06 |
2017-05-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
TWI683365B
(zh)
|
2015-02-06 |
2020-01-21 |
日商半導體能源研究所股份有限公司 |
裝置及其製造方法以及電子裝置
|
JP6717604B2
(ja)
|
2015-02-09 |
2020-07-01 |
株式会社半導体エネルギー研究所 |
半導体装置、中央処理装置及び電子機器
|
US10236884B2
(en)
|
2015-02-09 |
2019-03-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Word line driver comprising NAND circuit
|
JP6674269B2
(ja)
|
2015-02-09 |
2020-04-01 |
株式会社半導体エネルギー研究所 |
半導体装置、及び半導体装置の作製方法
|
WO2016128859A1
(en)
|
2015-02-11 |
2016-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US9818880B2
(en)
|
2015-02-12 |
2017-11-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including the semiconductor device
|
WO2016128854A1
(en)
|
2015-02-12 |
2016-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film and semiconductor device
|
JP2016154225A
(ja)
|
2015-02-12 |
2016-08-25 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
US10249644B2
(en)
|
2015-02-13 |
2019-04-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method of the same
|
US10403646B2
(en)
|
2015-02-20 |
2019-09-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US9991394B2
(en)
|
2015-02-20 |
2018-06-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and fabrication method thereof
|
US9489988B2
(en)
|
2015-02-20 |
2016-11-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Memory device
|
JP6711642B2
(ja)
|
2015-02-25 |
2020-06-17 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6739185B2
(ja)
|
2015-02-26 |
2020-08-12 |
株式会社半導体エネルギー研究所 |
ストレージシステム、およびストレージ制御回路
|
US9653613B2
(en)
|
2015-02-27 |
2017-05-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
WO2016139559A1
(ja)
|
2015-03-02 |
2016-09-09 |
株式会社半導体エネルギー研究所 |
環境センサ、又は半導体装置
|
JP6744108B2
(ja)
|
2015-03-02 |
2020-08-19 |
株式会社半導体エネルギー研究所 |
トランジスタ、トランジスタの作製方法、半導体装置および電子機器
|
TWI718125B
(zh)
|
2015-03-03 |
2021-02-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置及其製造方法
|
WO2016139560A1
(en)
|
2015-03-03 |
2016-09-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device
|
CN107408579B
(zh)
|
2015-03-03 |
2021-04-02 |
株式会社半导体能源研究所 |
半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置
|
US9905700B2
(en)
|
2015-03-13 |
2018-02-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device or memory device and driving method thereof
|
US9964799B2
(en)
|
2015-03-17 |
2018-05-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module, and electronic device
|
US9882061B2
(en)
|
2015-03-17 |
2018-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
CN107430461B
(zh)
|
2015-03-17 |
2022-01-28 |
株式会社半导体能源研究所 |
触摸屏
|
US10008609B2
(en)
|
2015-03-17 |
2018-06-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing the same, or display device including the same
|
US10134332B2
(en)
|
2015-03-18 |
2018-11-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, electronic device, and driving method of display device
|
JP6662665B2
(ja)
|
2015-03-19 |
2020-03-11 |
株式会社半導体エネルギー研究所 |
液晶表示装置及び該液晶表示装置を用いた電子機器
|
US10147823B2
(en)
|
2015-03-19 |
2018-12-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR102582523B1
(ko)
|
2015-03-19 |
2023-09-26 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 전자 기기
|
US9842938B2
(en)
|
2015-03-24 |
2017-12-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and display device including semiconductor device
|
JP6688116B2
(ja)
|
2015-03-24 |
2020-04-28 |
株式会社半導体エネルギー研究所 |
撮像装置および電子機器
|
KR20160114511A
(ko)
|
2015-03-24 |
2016-10-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제작 방법
|
US10429704B2
(en)
|
2015-03-26 |
2019-10-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device, display module including the display device, and electronic device including the display device or the display module
|
US10096715B2
(en)
|
2015-03-26 |
2018-10-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, method for manufacturing the same, and electronic device
|
JP6736321B2
(ja)
|
2015-03-27 |
2020-08-05 |
株式会社半導体エネルギー研究所 |
半導体装置の製造方法
|
US9806200B2
(en)
|
2015-03-27 |
2017-10-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
TWI695513B
(zh)
|
2015-03-27 |
2020-06-01 |
日商半導體能源研究所股份有限公司 |
半導體裝置及電子裝置
|
TW202316486A
(zh)
|
2015-03-30 |
2023-04-16 |
日商半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
US9716852B2
(en)
|
2015-04-03 |
2017-07-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Broadcast system
|
US10389961B2
(en)
|
2015-04-09 |
2019-08-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
KR102546189B1
(ko)
|
2015-04-13 |
2023-06-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
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|
US10372274B2
(en)
|
2015-04-13 |
2019-08-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and touch panel
|
US10460984B2
(en)
|
2015-04-15 |
2019-10-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for fabricating electrode and semiconductor device
|
US10056497B2
(en)
|
2015-04-15 |
2018-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
JP2016206659A
(ja)
|
2015-04-16 |
2016-12-08 |
株式会社半導体エネルギー研究所 |
表示装置および電子機器、並びに表示装置の駆動方法
|
US10679017B2
(en)
|
2015-04-21 |
2020-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and system thereof
|
US10192995B2
(en)
|
2015-04-28 |
2019-01-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US10002970B2
(en)
|
2015-04-30 |
2018-06-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method of the same, or display device including the same
|
US10671204B2
(en)
|
2015-05-04 |
2020-06-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Touch panel and data processor
|
KR102549926B1
(ko)
|
2015-05-04 |
2023-06-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
|
JP6681780B2
(ja)
|
2015-05-07 |
2020-04-15 |
株式会社半導体エネルギー研究所 |
表示システムおよび電子機器
|
DE102016207737A1
(de)
|
2015-05-11 |
2016-11-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung, Verfahren zum Herstellen der Halbleitervorrichtung, Reifen und beweglicher Gegenstand
|
TWI693719B
(zh)
|
2015-05-11 |
2020-05-11 |
日商半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
US11728356B2
(en)
|
2015-05-14 |
2023-08-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Photoelectric conversion element and imaging device
|
JP6935171B2
(ja)
|
2015-05-14 |
2021-09-15 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US9627034B2
(en)
|
2015-05-15 |
2017-04-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Electronic device
|
CN114695562A
(zh)
|
2015-05-22 |
2022-07-01 |
株式会社半导体能源研究所 |
半导体装置以及包括该半导体装置的显示装置
|
US9837547B2
(en)
|
2015-05-22 |
2017-12-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising oxide conductor and display device including the semiconductor device
|
JP6773453B2
(ja)
|
2015-05-26 |
2020-10-21 |
株式会社半導体エネルギー研究所 |
記憶装置及び電子機器
|
JP2016225614A
(ja)
|
2015-05-26 |
2016-12-28 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US10139663B2
(en)
|
2015-05-29 |
2018-11-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Input/output device and electronic device
|
KR102553553B1
(ko)
|
2015-06-12 |
2023-07-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
촬상 장치, 및 그 동작 방법 및 전자 기기
|
DE112016002769T5
(de)
|
2015-06-19 |
2018-03-29 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung, Herstellungsverfahren dafür und elektronisches Gerät
|
US9860465B2
(en)
|
2015-06-23 |
2018-01-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
US9935633B2
(en)
|
2015-06-30 |
2018-04-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Logic circuit, semiconductor device, electronic component, and electronic device
|
US10290573B2
(en)
|
2015-07-02 |
2019-05-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
US9917209B2
(en)
|
2015-07-03 |
2018-03-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device including step of forming trench over semiconductor
|
US10181531B2
(en)
|
2015-07-08 |
2019-01-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including transistor having low parasitic capacitance
|
JP2017022377A
(ja)
|
2015-07-14 |
2017-01-26 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US10501003B2
(en)
|
2015-07-17 |
2019-12-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, lighting device, and vehicle
|
US10985278B2
(en)
|
2015-07-21 |
2021-04-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US10978489B2
(en)
|
2015-07-24 |
2021-04-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
|
US11189736B2
(en)
|
2015-07-24 |
2021-11-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
US11024725B2
(en)
|
2015-07-24 |
2021-06-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including metal oxide film
|
US10424671B2
(en)
|
2015-07-29 |
2019-09-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, circuit board, and electronic device
|
US10585506B2
(en)
|
2015-07-30 |
2020-03-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device with high visibility regardless of illuminance of external light
|
US9825177B2
(en)
|
2015-07-30 |
2017-11-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of a semiconductor device using multiple etching mask
|
CN106409919A
(zh)
|
2015-07-30 |
2017-02-15 |
株式会社半导体能源研究所 |
半导体装置以及包括该半导体装置的显示装置
|
KR102513517B1
(ko)
|
2015-07-30 |
2023-03-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 전자 기기
|
US9876946B2
(en)
|
2015-08-03 |
2018-01-23 |
Semiconductor Energy Laboratory Co., Ltd. |
Imaging device and electronic device
|
US9911861B2
(en)
|
2015-08-03 |
2018-03-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, manufacturing method of the same, and electronic device
|
US10553690B2
(en)
|
2015-08-04 |
2020-02-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
JP6791661B2
(ja)
|
2015-08-07 |
2020-11-25 |
株式会社半導体エネルギー研究所 |
表示パネル
|
US9893202B2
(en)
|
2015-08-19 |
2018-02-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
JP2017041877A
(ja)
|
2015-08-21 |
2017-02-23 |
株式会社半導体エネルギー研究所 |
半導体装置、電子部品、および電子機器
|
US9666606B2
(en)
|
2015-08-21 |
2017-05-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
US9773919B2
(en)
|
2015-08-26 |
2017-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
WO2017037564A1
(en)
|
2015-08-28 |
2017-03-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Oxide semiconductor, transistor, and semiconductor device
|
US9911756B2
(en)
|
2015-08-31 |
2018-03-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
|
JP2017050537A
(ja)
|
2015-08-31 |
2017-03-09 |
株式会社半導体エネルギー研究所 |
半導体装置
|
JP6807683B2
(ja)
|
2015-09-11 |
2021-01-06 |
株式会社半導体エネルギー研究所 |
入出力パネル
|
SG10201607278TA
(en)
|
2015-09-18 |
2017-04-27 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and electronic device
|
JP2017063420A
(ja)
|
2015-09-25 |
2017-03-30 |
株式会社半導体エネルギー研究所 |
半導体装置
|
CN108140657A
(zh)
|
2015-09-30 |
2018-06-08 |
株式会社半导体能源研究所 |
半导体装置及电子设备
|
WO2017064590A1
(en)
|
2015-10-12 |
2017-04-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
WO2017064587A1
(en)
|
2015-10-12 |
2017-04-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Display panel, input/output device, data processor, and method for manufacturing display panel
|
US9852926B2
(en)
|
2015-10-20 |
2017-12-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method for semiconductor device
|
WO2017068490A1
(en)
|
2015-10-23 |
2017-04-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
DE112016000146T5
(de)
|
2015-10-23 |
2017-07-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Halbleitervorrichtung und elektronische Vorrichtung
|
US10007161B2
(en)
|
2015-10-26 |
2018-06-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device
|
JP2017085093A
(ja)
|
2015-10-29 |
2017-05-18 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
SG10201608814YA
(en)
|
2015-10-29 |
2017-05-30 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device and method for manufacturing the semiconductor device
|
US9773787B2
(en)
|
2015-11-03 |
2017-09-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
|
US9741400B2
(en)
|
2015-11-05 |
2017-08-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
|
JP6796461B2
(ja)
|
2015-11-18 |
2020-12-09 |
株式会社半導体エネルギー研究所 |
半導体装置、コンピュータ及び電子機器
|
US10868045B2
(en)
|
2015-12-11 |
2020-12-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, semiconductor device, and electronic device
|
JP2018032839A
(ja)
|
2015-12-11 |
2018-03-01 |
株式会社半導体エネルギー研究所 |
トランジスタ、回路、半導体装置、表示装置および電子機器
|
US10050152B2
(en)
|
2015-12-16 |
2018-08-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Transistor, semiconductor device, and electronic device
|
KR20180095836A
(ko)
|
2015-12-18 |
2018-08-28 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 상기 반도체 장치를 포함한 표시 장치
|
US10177142B2
(en)
|
2015-12-25 |
2019-01-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Circuit, logic circuit, processor, electronic component, and electronic device
|
KR102687427B1
(ko)
|
2015-12-28 |
2024-07-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치 및 반도체 장치를 포함하는 표시 장치
|
JP6851814B2
(ja)
|
2015-12-29 |
2021-03-31 |
株式会社半導体エネルギー研究所 |
トランジスタ
|
KR20180099725A
(ko)
|
2015-12-29 |
2018-09-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
금속 산화물막 및 반도체 장치
|
JP2017135698A
(ja)
|
2015-12-29 |
2017-08-03 |
株式会社半導体エネルギー研究所 |
半導体装置、コンピュータ及び電子機器
|
US10580798B2
(en)
|
2016-01-15 |
2020-03-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
KR102233786B1
(ko)
|
2016-01-18 |
2021-03-29 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
금속 산화물막, 반도체 장치, 및 표시 장치
|
US9905657B2
(en)
|
2016-01-20 |
2018-02-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing semiconductor device
|
JP6822853B2
(ja)
|
2016-01-21 |
2021-01-27 |
株式会社半導体エネルギー研究所 |
記憶装置及び記憶装置の駆動方法
|
US10411013B2
(en)
|
2016-01-22 |
2019-09-10 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and memory device
|
US10700212B2
(en)
|
2016-01-28 |
2020-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof
|
US10115741B2
(en)
|
2016-02-05 |
2018-10-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and electronic device
|
US10250247B2
(en)
|
2016-02-10 |
2019-04-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic device
|
JP6970511B2
(ja)
|
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|
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(ko)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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|
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|
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(en)
|
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|
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(en)
|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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(en)
|
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|
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(ko)
|
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|
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(en)
|
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|
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(zh)
|
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|
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(en)
|
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|
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(en)
|
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|
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(ja)
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|
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|
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|
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|
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|
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|
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(ja)
|
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|
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(en)
|
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|
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(ko)
|
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|
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|
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|
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|
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|
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(en)
*
|
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|