JP6496132B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6496132B2 JP6496132B2 JP2014243308A JP2014243308A JP6496132B2 JP 6496132 B2 JP6496132 B2 JP 6496132B2 JP 2014243308 A JP2014243308 A JP 2014243308A JP 2014243308 A JP2014243308 A JP 2014243308A JP 6496132 B2 JP6496132 B2 JP 6496132B2
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- film
- insulating film
- oxide semiconductor
- transistor
- conductive film
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- KMHJKRGRIJONSV-UHFFFAOYSA-N dioxygen(.1+) Chemical compound [O+]=O KMHJKRGRIJONSV-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000005267 main chain polymer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005266 side chain polymer Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Description
図1に、本発明の一態様にかかる半導体装置が有する、トランジスタ10の具体的な構成例を示す。図1(A)には、トランジスタ10の上面図を示す。なお、図1(A)では、トランジスタ10のレイアウトを明確にするために、ゲート絶縁膜などの各種の絶縁膜を省略している。また、図1(A)に示した上面図の、破線Y1−Y2における断面図を図1(B)に示し、破線X1−X2における断面図を図1(C)に示す。
次いで、本発明の一態様にかかる半導体装置が有する、トランジスタ10の別の構成例を図2に示す。図2(A)には、トランジスタ10の上面図を示す。なお、図2(A)では、トランジスタ10のレイアウトを明確にするために、ゲート絶縁膜などの各種の絶縁膜を省略している。また、図2(A)に示した上面図の、破線Y1−Y2における断面図を図2(B)に示し、破線X1−X2における断面図を図2(C)に示す。
次いで、本発明の一態様にかかる半導体装置が有する、トランジスタ10の別の構成例を図3に示す。図3(A)には、トランジスタ10の上面図を示す。なお、図3(A)では、トランジスタ10のレイアウトを明確にするために、ゲート絶縁膜などの各種の絶縁膜を省略している。また、図3(A)に示した上面図の、破線Y1−Y2における断面図を図3(B)に示し、破線X1−X2における断面図を図3(C)に示す。
次いで、本発明の一態様にかかる半導体装置が有する、トランジスタ10の別の構成例を図4に示す。図4(A)には、トランジスタ10の上面図を示す。なお、図4(A)では、トランジスタ10のレイアウトを明確にするために、ゲート絶縁膜などの各種の絶縁膜を省略している。また、図4(A)に示した上面図の、破線Y1−Y2における断面図を図4(B)に示し、破線X1−X2における断面図を図4(C)に示す。
次いで、本発明の一態様にかかる半導体装置の一例にかかる、表示装置の構成例について説明する。
次いで、本発明の一態様にかかる半導体装置の一つである液晶表示装置を例に挙げて、画素30の構成例について説明する。図5に、図1に示したトランジスタ10と共に基板11上に形成された画素30の上面図を、一例として示す。なお、図5では、画素30のレイアウトを明確にするために、各種の絶縁膜を省略している。また、図5に示す画素30を有する素子基板を用いて形成された液晶表示装置の断面図を、図6に示す。図6は、図5の破線A1−A2における断面図に相当する。
次いで、図1に示すトランジスタ10のゲートとして機能する導電膜12と同じ層に位置する導電膜50と、図1に示すトランジスタ10のソース電極またはドレイン電極として機能する導電膜16及び導電膜17と同じ層に位置する導電膜51との、接続構成の一例について説明する。
次いで、本発明の一態様にかかる半導体装置の一つである液晶表示装置を例に挙げて、画素の別の構成例について説明する。図9に、画素における素子基板の断面図を、一例として示す。
次いで、本発明の一態様にかかる半導体装置の作製方法の一例について、図10乃至図14を用いて説明する。
次いで、本発明の一態様にかかる半導体装置の作製方法の別の一例について、図10と、図15乃至図17とを用いて説明する。
次いで、本発明の一態様にかかる半導体装置が有する順序回路の構成例を、図18に示す。
次いで、本発明の一態様にかかる表示装置400の作製方法について、図21及び図22を用いて説明する。
次いで、本発明の一態様にかかる表示装置400の別の作製方法について、図23を用いて説明する。なお、図23では、絶縁膜420及び絶縁膜440として無機絶縁膜を用いる構成について説明する。
以下では、酸化物半導体の構造について説明する。
まずは、CAAC−OSについて説明する。なお、CAAC−OSを、CANC(C−Axis Aligned nanocrystals)を有する酸化物半導体と呼ぶこともできる。
次に、微結晶酸化物半導体について説明する。
次に、非晶質酸化物半導体について説明する。
なお、酸化物半導体は、nc−OSと非晶質酸化物半導体との間の構造を有する場合がある。そのような構造を有する酸化物半導体を、特に非晶質ライク酸化物半導体(a−like OS:amorphous−like Oxide Semiconductor)と呼ぶ。
以下では、CAAC−OSおよびnc−OSの成膜モデルの一例について説明する。
次いで、液晶表示装置を例に挙げて、本発明の一態様にかかる半導体装置の外観について、図32を用いて説明する。図32は、基板4001と基板4006とを封止材4005によって接着させた液晶表示装置の上面図である。また、図33は、図32の破線C1−C2における断面図に相当する。
本発明の一態様に係る半導体装置は、表示装置、ノート型パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型ゲーム機、携帯情報端末、電子書籍、ビデオカメラ、デジタルスチルカメラなどのカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンター、プリンター複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図34に示す。
C2 容量素子
CLK1 信号
CLK2 信号
CLK3 信号
CLK4 信号
GL1 配線
M1 トランジスタ
M2 トランジスタ
M3 トランジスタ
M4 トランジスタ
M5 トランジスタ
M6 トランジスタ
M7 トランジスタ
M8 トランジスタ
M9 トランジスタ
M10 トランジスタ
M11 トランジスタ
M12 トランジスタ
M13 トランジスタ
M14 トランジスタ
M15 トランジスタ
PWC1 信号
SL1 配線
T1 配線
T2 配線
T3 配線
T4 配線
T5 配線
T6 配線
T7 配線
T8 配線
T9 配線
10 トランジスタ
10A トランジスタ
10B トランジスタ
10D トランジスタ
10P トランジスタ
11 基板
12 導電膜
12A 導電膜
12B 導電膜
13 絶縁膜
14 酸化物半導体膜
14A 酸化物半導体膜
14B 酸化物半導体膜
15 絶縁膜
15a 絶縁膜
15b 絶縁膜
16 導電膜
16A 導電膜
16B 導電膜
17 導電膜
17A 導電膜
17B 導電膜
18 領域
19 端部
20 絶縁膜
20a 絶縁膜
20b 絶縁膜
21 絶縁膜
22 導電膜
22A 導電膜
23 開口部
23A 開口部
23B 開口部
24 開口部
24A 開口部
24B 開口部
25 開口部
30 画素
31 容量素子
32 金属酸化物膜
32a 酸化物半導体膜
33 導電膜
34 開口部
35 開口部
36 開口部
37 導電膜
38 配向膜
40 基板
41 遮蔽膜
42 着色層
43 樹脂膜
44 導電膜
45 配向膜
46 液晶層
50 導電膜
51 導電膜
52 開口部
53 開口部
54 導電膜
55 開口部
60 開口部
61 絶縁膜
70 表示装置
71 画素部
72 駆動回路
73 駆動回路
74 液晶素子
76 トランジスタ
77 トランジスタ
78 容量素子
79 発光素子
360 接続電極
380 異方性導電膜
400 表示装置
401 基板
405 基板
410 素子層
411 素子層
412 接着層
418 接着層
420 絶縁膜
432 封止層
440 絶縁膜
462 基板
463 剥離層
464 剥離用接着剤
466 仮支持基板
468 レーザ光
4001 基板
4002 画素部
4003 駆動回路
4004 駆動回路
4005 封止材
4006 基板
4010 トランジスタ
4018 FPC
4020 絶縁膜
4021 絶縁膜
4022 画素電極
4023 液晶素子
4028 液晶層
4030 配線
4050 導電膜
4059 樹脂膜
4060 共通電極
4061 導電性粒子
4062 樹脂膜
5001 筐体
5002 表示部
5003 支持台
5101 筐体
5102 表示部
5103 操作キー
5301 筐体
5302 筐体
5303 表示部
5304 表示部
5305 マイクロホン
5306 スピーカー
5307 操作キー
5308 スタイラス
5601 筐体
5602 表示部
5701 筐体
5702 表示部
5901 筐体
5902 表示部
5903 カメラ
5904 スピーカー
5905 ボタン
5906 外部接続部
5907 マイク
6100 ペレット
6100a ペレット
6100b ペレット
6101 イオン
6102 酸化亜鉛層
6103 粒子
6105a ペレット
6105a1 領域
6105a2 ペレット
6105b ペレット
6105c ペレット
6105d ペレット
6105d1 領域
6105e ペレット
6120 基板
6130 ターゲット
6161 領域
Claims (3)
- 第1の導電膜と、
前記第1の導電膜上の第1の絶縁膜と、
前記第1の絶縁膜上の第1の酸化物半導体膜と、
前記第1の絶縁膜上の第2の酸化物半導体膜と、
前記第1の酸化物半導体膜上の第2の絶縁膜と、
前記第2の絶縁膜上の第2の導電膜及び第3の導電膜と、
前記第2の導電膜上、かつ、前記第3の導電膜上の第3の絶縁膜と、
前記第3の絶縁膜上の画素電極と、
を有し、
前記第1の酸化物半導体膜は、前記第1の絶縁膜を介して前記第1の導電膜と重なる第1の領域を有し、
前記第2の絶縁膜は、第1の開口部及び第2の開口部を有し、
前記第2の導電膜は、前記第1の開口部を介して前記第1の酸化物半導体膜と電気的に接続され、
前記第3の導電膜は、前記第2の開口部を介して前記第1の酸化物半導体膜と電気的に接続され、
前記第2の絶縁膜は、第1の膜と、前記第1の膜上の第2の膜と、を有し、
前記第2の絶縁膜は、前記第1の領域と重なる領域を有し、
前記第2の絶縁膜は、前記第1の酸化物半導体膜の端部と重なる領域を有し、
前記第1の膜は、前記第1の領域の上面と接する領域を有し、
前記第1の膜は、前記第1の酸化物半導体膜の端部と接する領域を有し、
前記第1の膜は、前記第1の絶縁膜と接する領域を有し、
前記画素電極は、前記第3の導電膜と電気的に接続され、
前記第2の酸化物半導体膜は、前記第3の絶縁膜を介して前記画素電極と重なる第2の領域を有し、
前記第1の酸化物半導体膜は、In、Ga、及びZnを主成分として含み、
前記第2の酸化物半導体膜は、In、Ga、及びZnを主成分として含み、
前記第2の領域は、前記第1の領域よりも導電性が高い半導体装置。 - 第1の導電膜と、
前記第1の導電膜上の第1の絶縁膜と、
前記第1の絶縁膜上の第1の酸化物半導体膜と、
前記第1の絶縁膜上の第2の酸化物半導体膜と、
前記第1の酸化物半導体膜上の第2の絶縁膜と、
前記第2の絶縁膜上の第2の導電膜及び第3の導電膜と、
前記第2の導電膜上、かつ、前記第3の導電膜上の第3の絶縁膜と、
前記第3の絶縁膜上の画素電極と、
を有し、
前記第1の導電膜は、前記第1の絶縁膜を介して前記第1の酸化物半導体膜全体と重なる領域を有し、
前記第2の絶縁膜は、第1の開口部及び第2の開口部を有し、
前記第2の導電膜は、前記第1の開口部を介して前記第1の酸化物半導体膜と電気的に接続され、
前記第3の導電膜は、前記第2の開口部を介して前記第1の酸化物半導体膜と電気的に接続され、
前記第2の絶縁膜は、第1の膜と、前記第1の膜上の第2の膜と、を有し、
前記第2の絶縁膜は、前記第1の開口部と前記第2の開口部との間において前記第1の酸化物半導体膜と重なる領域を有し、
前記第2の絶縁膜は、前記第1の酸化物半導体膜の端部と重なる領域を有し、
前記第1の膜は、前記第1の領域の上面と接する領域を有し、
前記第1の膜は、前記第1の酸化物半導体膜の端部と接する領域を有し、
前記第1の膜は、前記第1の絶縁膜と接する領域を有し、
前記画素電極は、前記第3の導電膜と電気的に接続され、
前記第2の酸化物半導体膜は、前記第3の絶縁膜を介して前記画素電極と重なる第2の領域を有し、
前記第1の酸化物半導体膜は、In、Ga、及びZnを主成分として含み、
前記第2の酸化物半導体膜は、In、Ga、及びZnを主成分として含み、
前記第2の領域は、前記第1の酸化物半導体膜のチャネル形成領域よりも導電性が高い半導体装置。 - 請求項1または請求項2において、
前記第2の酸化物半導体膜と電気的に接続される第4の導電膜を有し、
前記第4の導電膜は、前記第2の酸化物半導体膜に電位を供給する配線として機能する半導体装置。
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