TW201327833A - 顯示裝置以及包含其之影像顯示系統 - Google Patents
顯示裝置以及包含其之影像顯示系統 Download PDFInfo
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- TW201327833A TW201327833A TW100148817A TW100148817A TW201327833A TW 201327833 A TW201327833 A TW 201327833A TW 100148817 A TW100148817 A TW 100148817A TW 100148817 A TW100148817 A TW 100148817A TW 201327833 A TW201327833 A TW 201327833A
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- display device
- electrode
- metal oxide
- transparent metal
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims description 47
- 150000004706 metal oxides Chemical class 0.000 claims description 47
- 239000003990 capacitor Substances 0.000 claims description 32
- 238000000059 patterning Methods 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 97
- 239000011241 protective layer Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 238000001459 lithography Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本發明提供一種顯示裝置及包含其之影像顯示系統。該顯示裝置包含一薄膜電晶體,以及一儲存電容。其中該薄膜電晶體包含一通道。該儲存電容包含一透明金屬氧化電極,與該通道係由相同之材質所構成;及一畫素電極,位於該透明金屬氧化電極上,且電性連接該薄膜電晶體。
Description
本發明係有關於一種顯示裝置以及包含其之影像顯示系統,特別是關於一種具有可提升開口率之顯示裝置以及包含其之影像顯示系統。
薄膜電晶體(TFT)液晶顯示裝置之畫素基板一般包含電晶體、儲存電容、畫素電極、掃描線、資料線等元件。其中,儲存電容可維持驅動液晶所需之電位,避免畫素閃爍(flickering)、及對比不佳(low color contrast)等問題。
請參照第1圖,係為習知一下電極式薄膜電晶體液晶顯示裝置其畫素基板50的剖面示意圖。該畫素基板50包含一基板10;該基板10上形成有一閘極電極14以及一共通電極配線(common line)12;一閘極絕緣層16形成於該閘極電極14以及該共通電極配線12之上;一通道層18形成於位於閘極電極14正上方的閘極絕緣層16之上;一對源極/汲極電極20形成於該通道層18兩側,以及一金屬橋接層22形成於該閘極絕緣層16之上;一保護層24順應性形成於該源極/汲極電極20、該通道層18、以及該金屬橋接層22之上;一貫孔26貫穿該保護層24,並露出部份該金屬橋接層22之上面表;以及,一透明導電層28(作為畫素電極)形成於位於共通電極配線12正上方的保護層24之上,並填入該貫孔26中與該金屬橋接層22直接接觸。仍請參照第1圖,該共通電極配線12、部份該透明導電層28、以及位於該共通電極配線12以及該透明導電層28之間的閘極絕緣層16與保護層24構成一儲存電容(storage capacitor),其中該共通電極配線12係作為該儲存電容之下電極,而該透明導電層28係作為該儲存電容之上電極。一般來說法,為達到使用最少光罩數目的製程目的(該畫素基板50係使用五道光罩製程),該閘極電極14以及該共通電極配線12係對一第一金屬導電層使用同一道光罩進行圖形化後所定義出來。換言之,該共通電極配線12與該閘極電極14同樣由一不透明金屬導電層所成,如此一來儲存電容30所在區域無法使得背光源穿過,降低開口率以及影像亮度。此外,為當提高影像解析度而縮小畫素之整體尺寸時,畫素之最大部分的面積應該是用於配置畫素電極,相對的,非顯示區域(例如儲存電容器所佔的區域)使用的畫素面積應縮到最小,以維持畫素之開口率。然而,為提高開口率而降低儲存電容器之尺寸,會使畫素無法儲存必要的電容值,因此導致顯示器內的畫素閃爍、顏色對比不佳、及串音(cross-talk)的問題,進而影響顯示器之性能表現。
因此,如何能同時增加儲存電容器之容量且增加畫素電極之面積(換言之,在不影響畫素之開口率的情況下增加儲存電容器之容量),是目前薄膜電晶體液晶顯示器製程中一個非常重要的個課題。
有鑑於此,本發明提供一種顯示裝置以及包含其之影像顯示系統,其具有提升開口率(aperture ratio)之顯示裝置。該顯示裝置係利用形成透明的儲存電容下電極,可在不增加整個製程光罩數量的前提下,提升畫素區域的開口率。
該顯示裝置包含一薄膜電晶體,以及一儲存電容。其中該薄膜電晶體包含一通道。該儲存電容包含一透明金屬氧化電極,與該通道係由相同之材質所構成;及一畫素電極,位於該透明金屬氧化電極上,且電性連接該薄膜電晶體。
為使本發明之上述目的、特徵能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下:
以下將配合圖示,以說明根據本發明所提供之包含薄膜電晶體畫素結構之顯示裝置。
請參照第2圖,係顯示根據本發明一實施例所述之具有提升開口率(aperture ratio)之顯示裝置100。該顯示裝置100包含一基板102,該基板102可為一透明或不透明基板,例如玻璃基板、陶瓷基板、或塑膠基板;一第一接觸端104A、以及一閘極電極104B配置於該基板102之上表面,其中該第一接觸端104A與該閘極電極104B係由相同之材質所構成,換言之該第一接觸端104A與該閘極電極104B係由同一道光罩對一第一金屬導電層(未圖示,即M1)進行圖化後所形成。該第一金屬導電層之材質係為導電金屬,適合之材料可為鉬(Mo)、鎢(W)、鋁(Al)、鈦(Ti)、鉻(Cr)或其合金。與習知技術相比,由於該第一接觸端104A並非用來作為後續所形成之儲存電容的下電極,而只是用來提供後續形成之儲存電容下電極一共通電位(Vcom),因此該第一接觸端104A可形成於顯示裝置100之畫素區域以外的非畫素區域內,不影響到開口率;一閘極絕緣層106配置於該基板102之上,並覆蓋該閘極104B、及該第一接觸端104A。該閘極絕緣層106可為介電材料,例如氧化矽或氮化矽;一透明金屬氧化電極108A配置於該顯示裝置100畫素區域內的閘極絕緣層106之上,而一通道108B,配置於該閘極電極104B正上方的該閘極絕緣層106之上,其中該透明金屬氧化電極108A與該通道108B係由相同之材質所構成,換言之該透明金屬氧化電極108A與該通道108B係由同一道光罩對一透明金屬氧化層進行圖化後所形成。值得注意的是,傳統顯示裝置位於畫素區域內之儲存電容下電極係在形成閘極的製程中同時形成,係由一不透明金屬材質所構成,因此會降低畫素區域的開口率。反觀本發明,係以該透明金屬氧化電極108A作為後續所形成之儲存電容的下電極,由於本發明所述之透明金屬氧化電極108A所使用之材質係為透明且導電的金屬氧化物(例如:氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化銦錫鋅(ITZO)、氧化鋅鋁(ZAO)、氧化鋅鎵(GZO)、氧化銦鎵鋅(IGZO)、氧化鋅(ZnO)或其疊層),不會遮蔽背光源所發出的光,即使擴大儲存電容所佔的面積,亦完全不會影響到開口率。本發明之另一個特點在於,該透明金屬氧化電極108A與該通道108B係由同一道光罩對一透明金屬氧化層進行圖化後所形成,即該透明金屬氧化電極108A(作為儲存電容的下電極)係在形成薄膜電晶體105的通道108B時同時形成,並不需要額外沉積透明導電層或是使用其他的微影蝕刻步驟來形成,可降低整體顯示裝置的製程複雜性;一源極電極及一汲極電極110B,分別配置於該通道108B之兩端的該閘極絕緣層106上,並與該通道108B接觸,以及一第二接觸端110A,配置於該閘極絕緣層106之上,其中該源極/汲極電極110B與該第二接觸端110A係由相同之材質所構成,換言之該源極/汲極電極110B與該第二接觸端110A係由同一道光罩對一第二金屬導電層(未圖示,即M2)進行圖化後所形成。該第二金屬導電層之材質係為導電金屬,適合之材料可為鉬(Mo)、鎢(W)、鋁(Al)、鈦(Ti)、鉻(Cr)或其合金。該閘極電極104B、該通道108B、該源極/汲極電極110B、以及位於該閘極電極104B與該通道108B間的閘極絕緣層106,係構成一薄膜電晶體105,而該第二接觸端110A係用來與後續所形成之畫素電極電性連結;一保護層112,配置於該閘極絕緣層106之上,並覆蓋該透明金屬氧化電極108A、該第二接觸端110A、該源極/汲極電極110B、以及該通道108B。該保護層112可為介電材料,例如氧化矽或氮化矽;一第一接觸窗114貫穿該閘極絕緣層106、及該保護層112,露出部份該第一接觸端104A之表面、一第二接觸窗116貫穿該保護層112,露出部份該透明金屬氧化電極108A之表面、以及一第三接觸窗118貫穿該保護層112,露出部份該第二接觸端110A之表面,其中該第一接觸窗114、第二接觸窗116、以及第三接觸窗118係以同一道光罩對該保護層112進行微影蝕刻後所形成;一透明連結層120A,配置於該保護層112之上,並填入該第一接觸窗114及該第二接觸窗116,以電性連結該第一接觸端104A及該透明金屬氧化電極108A;一畫素電極120B,配置於該透明金屬氧化電極108A正上方的該保護層112之上,並填入該第三接觸窗118,與該第二接觸端110A電性連結,其中該透明連結層120A與該畫素電極120B係由相同之材質所構成,換言之,該透明連結層120A與該畫素電極120B係由同一道光罩對一透明導電層(未圖示)進行圖化後所形成。該透明導電層可例如為氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化銦錫鋅(ITZO)、氧化鋅鋁(ZAO)、氧化鋅鎵(GZO)或其疊層。值得注意的是,該畫素電極120B、該透明金屬氧化電極108A、及位於該透明金屬氧化電極108A與該畫素電極120B間的保護層112係構成一儲存電容115,而該畫素電極120B係作為該儲存電容115的上電極,而該位於該透明金屬氧化電極108A與該畫素電極120B間的保護層112係作為電容介電層。由上可知,本發明所述之顯示裝置100製程僅需要五道微影蝕刻步驟,與習知技術相比,可在不增加製程複雜性的前提下,改善顯示裝置100的開口率。
此外,根據本發明另一實施例,由於該透明金屬氧化電極108A係為一透明導電層且直接位於該畫素電極120B之正下方,因此該畫素電極120B可進一步被設計為一梳形結構,以與該透明金屬氧化電極108A構成一邊緣電場驅動模式(fringe-field switching)之電極陣列結構,以增加顯示系統的可視角度。再者,根據本發明其他實施例,該第一接觸窗114與該第二接觸窗116可構成一單一的貫孔,貫穿該閘極絕緣層106、及該保護層112,同時露出部份該透明金屬氧化電極108A之表面、及該第第一接觸端之表面,而該透明連結層120A係填入該貫孔中,以電性連結該第一接觸端104A及該透明金屬氧化電極108A。
請參閱第3a圖至第3i圖,係顯示本發明第2圖所示之顯示裝置100其製造流程。在此用以說明的例子係為下閘極式的膜薄電晶體,然而根據本發明其他實施例,本發明所述具有提升開口率(aperture ratio)之顯示裝置亦可採用上閘極式的膜薄電晶體。
首先,請參照第3a圖,提供一基板102,並在其上形成一第一金屬導電層104(不透明導電層)。接著,請參照第3b圖,以一第一道微影蝕刻步驟對該第一金屬導電層104進行圖形化,得到第一接觸端104A、以及閘極電極104B,換言之該第一接觸端104A、以及閘極電極104B係以相同材料並在同一製程步驟中所同時形成。接著,請參照第3c圖,順應性形成一閘極絕緣層106於該基板102之上,並覆蓋該閘極絕緣層106;在形成該閘極絕緣層106之後,再順應性形成一透明金屬氧化層108於該閘極絕緣層106之上。接著,請參照第3d圖,以一第二道微影蝕刻步驟對該透明金屬氧化層108層進行圖形化,得到透明金屬氧化電極108A(位於畫素區域內)與通道108B(位於閘極電極104B之上方),換言之該透明金屬氧化電極108A與通道108B係以相同材料並在同一製程步驟中所同時形成。值得注意的是,該第二道微影蝕刻可採用背通道蝕刻(Back-Channel-Etched)的方式(搭配該閘極電極104B作為蝕刻罩幕)來圖形化該透明金屬氧化層108(或同時圖形化一形成於圖形化該透明金屬氧化層108之上的蝕刻停止層(未圖示))。接著,請參照第3e圖,順應性形成一第二金屬導電層110於該閘極絕緣層106之上並覆蓋該透明金屬氧化電極108A與通道108B。接著,請參照第3f圖,以一第三道微影蝕刻步驟對該第二金屬導電層110進行圖形化,形成一第二接觸端110A以及源極電極/汲極電極110B(配置於該通道108B之兩端的該閘極絕緣層106上,並與通道108B接觸),換言之該第二接觸端110A與源極電極/汲極電極110B係以相同材料並在同一製程步驟中所同時形成。接著,請參照第3g圖,順應性形成一保護層112於該閘極絕緣層106之上,並覆蓋該透明金屬氧化電極108A、該第二接觸端110A、該源極/汲極電極110B、以及該通道108B。接著,請參照第3h圖,以一第四道微影蝕刻步驟對該保護層112進行蝕刻,分別形成一第一接觸窗114、一第二接觸窗116、以及一第三接觸窗118,其中該第一接觸窗114貫穿該閘極絕緣層106、及該保護層112,露出部份該第一接觸端104A之表面;該第二接觸窗116貫穿該保護層112,露出部份該透明金屬氧化電極108A之表面;以及,該第三接觸窗118貫穿該保護層112,露出部份該第二接觸端110A之表面。接著,請參照第3i圖,順應性形成一透明導電層120於該保護層112之上,並填入該第一接觸窗114、該第二接觸窗116、以及該第三接觸窗118之內。最後,以一第五道微影蝕刻步驟對該透明導電層120進行圖形化,形成一透明連結層120A與畫素電極120B(換言之該透明連結層120A與畫素電極120B係以相同材料並在同一製程步驟中所同時形成),其中該透明連結層120A,係配置於該保護層112之上,並填入該第一接觸窗114及該第二接觸窗116,使得該第一接觸端104A及該透明金屬氧化電極108A藉由該透明連結層120A達到電性連結;而該畫素電極120B係配置於該透明金屬氧化電極108A正上方的該保護層112之上,並填入該第三接觸窗118,與該第二接觸端110A電性連結,得到第2圖所示之顯示裝置100。
根據本發明另一實施例,在完成第3e圖所述形成該第二金屬導電層110於該閘極絕緣層106之上的步驟後,當以一第三道微影蝕刻步驟對該第二金屬導電層110進行圖形化時,除了形成該第二接觸端110A以及該源極電極/汲極電極110B之外,更進一步形成一第三接觸端110C(即該第二接觸端110A、源極電極/汲極電極110B、及第三接觸端110C係以相同材料並在同一製程步驟中所同時形成),並使得第三接觸端110C係與該透明金屬氧化電極108A直接接觸。請參照第4圖,形成該第三接觸端110C的目的在於藉由第三接觸端110C來改善後續所形成的透明連結層120A與源極電極/汲極電極110B之間的導電性,如此一來可降低由第一接觸端104A之接觸阻值。
此外,根據本發明其他實施例,該第二道微影蝕刻亦可由基板之上表面(形成該第一金屬導電層104的表面)側來進行曝光,形成該透明金屬氧化電極108A與通道108B。此時,請參照第5a圖,為避免在後續移除部份形成在通道108B表面上的第二金屬導電層110的步驟中造成對通道108B的損害(會導致薄膜電晶體穩定性下降),可在形成該第二金屬導電層110前,形成一蝕刻停止層122於該通道108B之上(可利用一第六道微影蝕刻來形成該蝕刻停止層122)。之後,請參照第5b圖,再對該第二金屬導電層108進行微影蝕刻步驟,得到該第二接觸端110A與源極電極/汲極電極110B。接著,再進行第3g圖至第3i圖所述的步驟,得到第5c圖所示之顯示裝置100。
再者,根據本發明其他實施例,為避免對第二金屬導電層110進行圖形化時造成對通道108B的損害,再形成該形成該閘極絕緣層106之後,可以將形成該第二接觸端110A以及源極電極/汲極電極110B步驟提前,亦即在完成該第二金屬導電層110的圖形化後再形成通道108B。請參照第6a圖,形成該第二金屬導電層110於該閘極絕緣層106之上,接著對該第二金屬導電層110進行圖形化,形成第二接觸端110A以及源極電極/汲極電極110B,請參照第6b圖。接著,形成該透明金屬氧化層108,並對該透明金屬氧化層108進行圖形化,形成該明金屬氧化電極108A及通道108B,請參照第6c圖,其中通道108B係形成於源極電極/汲極電極110B之間,並與源極電極/汲極電極110B接觸。接著,在進行第3g圖至第3i圖所述的步驟,得到第6d圖所示之顯示裝置100。
綜上所述,本發明所述之顯示裝置係使用透明氧化物來作為儲存電容的下電極,因此即使增加儲存電容所佔的面積亦不會影響到畫素之開口率。此外,本發明所述之透明儲存電容下電極係在形成該通道的步驟中同時形成,不需要多一道微影蝕刻步驟來形成該透明儲存電容下電極,因此並不會增加製程複雜性。再者,本發明係使用一透明連結層來使該透明儲存電容下電極與共通電極配線(common line、即第一接觸端)達到電性連結,而該透明連結層係在形成該畫素電極的步驟中同時形成,因此不需要使用額外的微影蝕刻步驟來定義該透明連結層。與習知技術相比,本發明所述之顯示裝置,可在不增加製程複雜性的前提下(同樣為五道微影蝕刻步驟),改善畫素的開口率,且不需要更動常規的顯示裝置的驅動設計。
第7圖係繪示出根據本發明另一實施例所述之影像顯示系統300方塊示意圖,其可實施於一電子裝置,例如筆記型電腦、行動電話、數位相機、個人數位助理、桌上型電腦、電視機、車用顯示器、或攜帶式數位影音光碟播放器。本發明所述之影像顯示系統300,包含顯示裝置100和輸入單元200。該輸入單元200係耦接至顯示裝置100,用以提供輸入信號(例如,影像信號)至顯示裝置100以產生影像。顯示裝置100可係液晶顯示器、有機激發光顯示器等。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為基準。
10...基板
12...共通電極配線
14...閘極電極
16...閘極絕緣層
18...通道層
20...源極/汲極電極
22...金屬橋接層
24...保護層
26...貫孔
28...透明導電層
30...儲存電容
50...畫素基板
100...顯示裝置
102...基板
104...第一金屬導電層
104A...第一接觸端
104B...閘極電極
105...膜薄電晶體
106...閘極絕緣層
108...透明金屬氧化層
108A...透明金屬氧化電極
108B...通道
110...第二金屬導電層
110A...第二接觸端
110B...源極電極/汲極電極
112...保護層
114...第一接觸窗
115...儲存電容
116...第二接觸窗
118...第三接觸窗
120...透明導電層
120A...透明連結層
120B...畫素電極
122...蝕刻停止層
150...顯示裝置
200...輸入單元
以及
300...影像顯示系統
第1圖係繪示習知畫素基板之剖面結構示意圖。
第2圖係為本發明一實施例所述之顯示裝置的剖面結構示意圖。
第3a-3i圖係為一系列剖面結構示意圖,用以說明本發明第2圖所述之顯示裝置的製造流程。
第4圖係為本發明另一實施例所述之顯示裝置的剖面結構示意圖。
第5a-5c圖係為一系列剖面結構示意圖,用以說明本發明另一實施例所述之顯示裝置的製造流程。
第6a-6d圖係為一系列剖面結構示意圖,用以說明本發明其他實施例所述之顯示裝置的製造流程。
第7圖係繪示根據本發明一實施例之影像顯示系統方塊示意圖。
100...顯示裝置
102...基板
104A...第一接觸端
104B...閘極電極
105...膜薄電晶體
106...閘極絕緣層
108A...透明金屬氧化電極
108B...通道
110A...第二接觸端
110B...源極電極/汲極電極
112...保護層
115...儲存電容
118...第三接觸窗
120A...透明連結層
120B...畫素電極
Claims (11)
- 一種顯示裝置,包含:一薄膜電晶體,包含:一通道;及一儲存電容,包含:一透明金屬氧化電極,與該通道係由相同之材質所構成;及一畫素電極,位於該透明金屬氧化電極上,且電性連接該薄膜電晶體。
- 如申請專利範圍第1項所述之顯示裝置,其中該透明金屬氧化電極與該通道係配置於同一層上。
- 如申請專利範圍第1項所述之顯示裝置,其中該透明金屬氧化電極與該通道係由同一道光罩對一透明金屬氧化層進行圖案化後所形成。
- 如申請專利範圍第1項所述之顯示裝置,其中該透明金屬氧化層包含氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化銦錫鋅(ITZO)、氧化鋅鋁(ZAO)、氧化鋅鎵(GZO)、或其疊層。
- 如申請專利範圍第1項所述之顯示裝置,其中該影像顯示裝置更包含一第一接觸端,該第一接觸端電性連接該透明金屬氧化電極。
- 如申請專利範圍第5項所述之顯示裝置,其中該薄膜電晶體更包含一閘極電極,該閘極電極與該第一接觸端係由相同之材質所構成。
- 如申請專利範圍第6項所述之顯示裝置,其中該閘極電極與該第一接觸端係配置於同一層上。
- 如申請專利範圍第6項所述之顯示裝置,其中該閘極電極與該第一接觸端係由同一道光罩對一第一金屬導電層進行圖案化後所形成。
- 如申請專利範圍第1項所述之顯示裝置,其中該畫素電極係為一梳形結構.,並與該透明金屬氧化電極構成一邊緣電場驅動模式(fringe-field switching)之電極陣列結構。
- 一種影像顯示系統,包含:申請專利範圍第1項所述之顯示裝置;以及一輸入單元,與該顯示裝置耦接,其中該輸入單元係傳輸一訊號至該顯示裝置以產生影像。
- 如申請專利範圍第10項所述之影像顯示系統,其中該影像顯示系統係為行動電話、數位相機、個人數位助理、筆記型電腦、桌上型電腦、電視、車用顯示器、或攜帶式數位影音光碟播放器。
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TW100148817A TW201327833A (zh) | 2011-12-27 | 2011-12-27 | 顯示裝置以及包含其之影像顯示系統 |
US13/728,547 US20130161612A1 (en) | 2011-12-27 | 2012-12-27 | Display device and image display system employing the same |
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TW100148817A TW201327833A (zh) | 2011-12-27 | 2011-12-27 | 顯示裝置以及包含其之影像顯示系統 |
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US9905585B2 (en) * | 2012-12-25 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising capacitor |
JP6383616B2 (ja) * | 2013-09-25 | 2018-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9601634B2 (en) * | 2013-12-02 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN104157678B (zh) * | 2014-09-02 | 2017-10-13 | 深圳市华星光电技术有限公司 | 具有高开口率的像素结构及电路 |
US9947737B2 (en) * | 2015-03-09 | 2018-04-17 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Pixel structure having high aperture ratio and circuit |
US20170287943A1 (en) * | 2016-03-31 | 2017-10-05 | Qualcomm Incorporated | High aperture ratio display by introducing transparent storage capacitor and via hole |
CN109473448A (zh) * | 2018-11-06 | 2019-03-15 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制备方法、液晶显示面板、显示装置 |
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US6566685B2 (en) * | 2000-04-12 | 2003-05-20 | Casio Computer Co., Ltd. | Double gate photo sensor array |
TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
KR101375831B1 (ko) * | 2007-12-03 | 2014-04-02 | 삼성전자주식회사 | 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치 |
US20090278121A1 (en) * | 2008-05-08 | 2009-11-12 | Tpo Displays Corp. | System for displaying images and fabrication method thereof |
KR101783352B1 (ko) * | 2010-06-17 | 2017-10-10 | 삼성디스플레이 주식회사 | 평판 표시 장치 및 그 제조 방법 |
-
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