JP5886128B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5886128B2 JP5886128B2 JP2012105342A JP2012105342A JP5886128B2 JP 5886128 B2 JP5886128 B2 JP 5886128B2 JP 2012105342 A JP2012105342 A JP 2012105342A JP 2012105342 A JP2012105342 A JP 2012105342A JP 5886128 B2 JP5886128 B2 JP 5886128B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- oxide semiconductor
- oxide
- terminal
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Description
試料1および試料2のいずれも、BT試験前後におけるしきい値電圧の変動が小さく、信頼性が高いことがわかる。
102 NOR回路
104 バッファ回路
106 オフ電流が小さいトランジスタ
108 容量素子
110 第1の端子
112 第2の端子
114 第3の端子
116 第4の端子
118 第5の端子
120 オフ電流が小さいトランジスタ
122 第6の端子
124 第7の端子
126 データ保持部
200 pチャネル型トランジスタ及びnチャネル型トランジスタが設けられた半導体基板
201 高濃度不純物領域
202 低濃度不純物領域
203 ゲート絶縁膜
204 ゲート電極
205 層間絶縁膜
210 酸化物半導体層にチャネル形成領域を有するトランジスタ
211 酸化物半導体層
212a ソース電極
212b ドレイン電極
213 ゲート絶縁膜
214a 電極
214b ゲート電極
301 下地絶縁膜
302 埋め込み絶縁膜
303a 半導体領域
303b 半導体領域
303c 半導体領域
304 ゲート絶縁膜
305 ゲート
306a 側壁絶縁物
306b 側壁絶縁物
307 絶縁膜
308a ソース
308b ドレイン
Claims (2)
- 第1のレジスタ構成回路と、第1のトランジスタと、を有し、
前記第1のレジスタ構成回路は、第1の端子と、第2の端子と、第1のNOR回路と、第2のトランジスタと、第1のバッファ回路と、を有し、
前記第1のNOR回路は、第1の入力端子、第2の入力端子、及び第1の出力端子を有し、
前記第1のバッファ回路は、第3の入力端子及び第2の出力端子を有し、
前記第1の端子は、前記第1のトランジスタのソースまたはドレインの一方、前記第2のトランジスタのソースまたはドレインの一方、及び前記第3の入力端子と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方には、データ信号が入力され、
前記第1のトランジスタのゲートには、前記第1の入力端子に入力される信号が反転した信号が入力され、
前記第2の端子は、前記第2のトランジスタのソースまたはドレインの他方と電気的に接続され、
前記第1の出力端子は、前記第2のトランジスタのゲートと電気的に接続され、
前記第1のトランジスタ及び前記第2のトランジスタは、それぞれ酸化物半導体層にチャネル形成領域を有することを特徴とする半導体装置。 - 請求項1において、
第3のトランジスタをさらに有し、
前記第3のトランジスタのソースまたはドレインの一方は、前記第1のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、定電位電源線と電気的に接続され、
前記第3のトランジスタのゲートには、リセット信号が入力されることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012105342A JP5886128B2 (ja) | 2011-05-13 | 2012-05-02 | 半導体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011108340 | 2011-05-13 | ||
JP2011108340 | 2011-05-13 | ||
JP2012105342A JP5886128B2 (ja) | 2011-05-13 | 2012-05-02 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012257210A JP2012257210A (ja) | 2012-12-27 |
JP2012257210A5 JP2012257210A5 (ja) | 2015-05-14 |
JP5886128B2 true JP5886128B2 (ja) | 2016-03-16 |
Family
ID=47141489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012105342A Expired - Fee Related JP5886128B2 (ja) | 2011-05-13 | 2012-05-02 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9047947B2 (ja) |
JP (1) | JP5886128B2 (ja) |
TW (1) | TWI570743B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI552150B (zh) * | 2011-05-18 | 2016-10-01 | 半導體能源研究所股份有限公司 | 半導體儲存裝置 |
KR102081792B1 (ko) | 2011-05-19 | 2020-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 연산회로 및 연산회로의 구동방법 |
US8995218B2 (en) * | 2012-03-07 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102325158B1 (ko) * | 2014-01-30 | 2021-11-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법 |
JP6442321B2 (ja) * | 2014-03-07 | 2018-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法、並びに電子機器 |
KR20170072889A (ko) * | 2014-10-10 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
US10192626B1 (en) | 2017-08-31 | 2019-01-29 | Micro Technology, Inc. | Responding to power loss |
US10373694B2 (en) | 2017-08-31 | 2019-08-06 | Micron Technology, Inc. | Responding to power loss |
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