JP6016532B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6016532B2 JP6016532B2 JP2012189399A JP2012189399A JP6016532B2 JP 6016532 B2 JP6016532 B2 JP 6016532B2 JP 2012189399 A JP2012189399 A JP 2012189399A JP 2012189399 A JP2012189399 A JP 2012189399A JP 6016532 B2 JP6016532 B2 JP 6016532B2
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- Prior art keywords
- film
- oxide semiconductor
- transistor
- oxide
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 339
- 229910052760 oxygen Inorganic materials 0.000 claims description 130
- 239000001301 oxygen Substances 0.000 claims description 130
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- 239000002019 doping agent Substances 0.000 claims description 34
- 239000011701 zinc Substances 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 26
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 24
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- 229910052738 indium Inorganic materials 0.000 claims description 22
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 21
- 229910052733 gallium Inorganic materials 0.000 claims description 21
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。
本実施の形態では、本明細書に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置の一例を、図面を用いて説明する。
本実施の形態においては、実施の形態1又は実施の形態2に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置について、実施の形態2に示した構成と異なる構成について、図5及び図6を用いて説明を行う。
本実施の形態では、先の実施の形態で示した半導体装置を携帯電話、スマートフォン、電子書籍などの携帯機器に応用した場合の例を図7乃至図10を用いて説明する。
Claims (3)
- 酸化物絶縁層上に設けられたチャネル形成領域を含む酸化物半導体膜と、
前記酸化物半導体膜上にゲート絶縁膜と、
前記ゲート絶縁膜上に前記酸化物半導体膜と重なるゲート電極層と、
前記酸化物半導体層及び前記ゲート電極層上に酸化アルミニウム膜を含む絶縁層を有し、
前記酸化物絶縁層表面の平均面粗さは0.15nm以下であり、
前記酸化物半導体膜はインジウム、ガリウム、亜鉛、及び酸素の4元素を少なくとも含み、該4元素の組成を原子百分率で表したとき、インジウムの割合が、ガリウムの割合及び亜鉛の割合の2倍以上であり、
前記酸化物半導体膜において、前記ゲート電極層と重畳しない領域は、ドーパントを含むことを特徴とする半導体装置。 - 請求項1において、前記絶縁層は、前記ゲート電極層側から前記酸化アルミニウム膜と酸化シリコン膜との積層であることを特徴とする半導体装置。
- 請求項1又は請求項2において、前記酸化物半導体膜は、c軸配向した結晶領域を含むことを特徴とする半導体装置。
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