JP5897910B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5897910B2 JP5897910B2 JP2012008743A JP2012008743A JP5897910B2 JP 5897910 B2 JP5897910 B2 JP 5897910B2 JP 2012008743 A JP2012008743 A JP 2012008743A JP 2012008743 A JP2012008743 A JP 2012008743A JP 5897910 B2 JP5897910 B2 JP 5897910B2
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- oxide semiconductor
- semiconductor film
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- film
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Description
本実施の形態では、開示する発明の一態様に係る酸化物半導体素子の作製方法について、図1乃至図3を用いて説明する。
図1は、本実施の形態の方法にて作製された半導体装置の構成の一例である、トップゲート構造のトランジスタ120の図であり、図1(A)及び図1(B)はそれぞれトランジスタ120の上面図及び断面図である。なお、図1(A)では、煩雑になることを避けるため、構成要素の一部(例えば、基板100など)を省略している。本実施の形態では、トランジスタ120はキャリアが電子であるnチャネル型のトランジスタであるものとして作製方法を説明するが、nチャネル型に限定されるものではない。
本実施の形態では、実施の形態1にて記載した酸化物半導体層108の、異なる作製方法について図4を用いて説明する。
まず、基板100上に、絶縁層102を形成した後に、絶縁層102上に第1の酸化物半導体膜104を成膜し、第1の加熱処理によって少なくとも第1の酸化物半導体膜104の表面を含む領域を結晶化させる(図4(A)参照)。図4(A)は、実施の形態1の図2(A)に相当する。ここまでの処理については、実施の形態1と同様であるため、ここでは説明を省略する。
本実施の形態では、実施の形態1にて記載した酸化物半導体層108の、異なる作製方法について図5を用いて説明する。
まず、基板100上に、絶縁層102を形成した後に、絶縁層102上に第2の酸化物半導体膜106を成膜し、第2の加熱処理によって第2の酸化物半導体膜106を結晶化させる(図5(A)参照)。なお、実施の形態1と同じ符号を用いている構成要素については、成膜条件、使用材料及び加工方法などについては、実施の形態1と同じである。したがって、ここでは説明を省略する。
本実施の形態では、実施の形態1とは異なる形態の酸化物半導体素子およびその作製方法について、図6乃至図7を用いて説明する。
図6は、本実施の形態の方法にて作製された半導体装置の構成の一例である、ボトムゲート構造のトランジスタ420の図であり、図6(A)及び図6(B)はそれぞれトランジスタ420の上面図及び断面図である。なお、図6(A)では、煩雑になることを避けるため、構成要素の一部(例えば、基板100など)を省略している。本実施の形態では、トランジスタ420はキャリアが電子であるnチャネル型のトランジスタであるものとして作製方法を説明するが、nチャネル型に限定されるものではない。
本実施の形態では、実施の形態1とは異なる形態の酸化物半導体素子およびその作製方法について、図8乃至図10を用いて説明する。
図8は、本実施の形態の方法にて作製された半導体装置の構成の一例である、トランジスタ720の図であり、図8(A)及び図8(B)はそれぞれトランジスタ720の上面図及び断面図である。なお、図8(A)では、煩雑になることを避けるため、構成要素の一部(例えば、基板100など)を省略している。本実施の形態では、トランジスタ720はキャリアが電子であるnチャネル型のトランジスタであるものとして作製方法を説明するが、nチャネル型に限定されるものではない。
本明細書に開示する酸化物半導体素子は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。前述の実施の形態で説明した酸化物半導体素子を具備する電子機器の一例を図11を用いて説明する。
102 絶縁層
104 第1の酸化物半導体膜
104a 第1の酸化物半導体膜
106 第2の酸化物半導体膜
106a 第2の酸化物半導体膜
108 酸化物半導体層
110 導電層
110a ソース電極層
110b ドレイン電極層
112 ゲート絶縁層
114 ゲート電極
116 第1の層間絶縁層
118 第2の層間絶縁層
120 トランジスタ
405 不純物添加処理
505 不純物添加処理
420 トランジスタ
704a 第1の酸化物半導体膜
706a 第2の酸化物半導体膜
705 不純物添加処理
707 低抵抗領域
708 酸化物半導体層
709 開口部
720 トランジスタ
1001 筐体
1002 筐体
1003a 第1の表示部
1003b 第2の表示部
1004 選択ボタン
1005 キーボード
1101 表示部
1102 圧電振動子
1201 眼鏡本体部
1202a 左目用パネル
1202b 右目用パネル
1203 画像表示ボタン
Claims (1)
- 第1の絶縁層と、酸化物半導体層と、第2の絶縁層と、導電層と、を有し、
前記酸化物半導体層は、前記第1の絶縁層の上方に設けられ、
前記酸化物半導体層は、第1の酸化物半導体層と、第2の酸化物半導体層と、を有し、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層は、結晶性を有し、前記第1の絶縁層の表面の法線ベクトルに沿うようにc軸が配向した領域を有し、
前記第1の酸化物半導体層のバンドギャップの値は、前記第2の酸化物半導体層のバンドギャップの値よりも小さく、
前記第1の酸化物半導体層は、前記第2の酸化物半導体層との界面近傍に、トランジスタのチャネル形成領域を有し、
前記第2の絶縁層は、前記トランジスタのゲート絶縁層となる機能を有し、
前記第2の絶縁層は、前記第2の酸化物半導体層の上方に設けられ、
前記導電層は、前記トランジスタのゲート電極となる機能を有し、
前記導電層は、前記第2の絶縁層を介して、前記第2の酸化物半導体層と重なるように設けられる半導体装置の作製方法であって、
前記第1の酸化物半導体層は、InとGaとZnとを有する金属酸化物のターゲットを用いて、スパッタ法によって形成されたものであり、
前記第2の酸化物半導体層は、InとGaとZnとを有する金属酸化物のターゲットを用いて、スパッタ法によって形成されたものであることを特徴とする半導体装置の作製方法。
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CN111477634B (zh) * | 2012-09-13 | 2023-11-14 | 株式会社半导体能源研究所 | 半导体装置 |
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US20120187395A1 (en) | 2012-07-26 |
KR20120084678A (ko) | 2012-07-30 |
US8916867B2 (en) | 2014-12-23 |
JP7113874B2 (ja) | 2022-08-05 |
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US9917206B2 (en) | 2018-03-13 |
US9337347B2 (en) | 2016-05-10 |
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JP6553782B2 (ja) | 2019-07-31 |
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