JP2014212309A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2014212309A JP2014212309A JP2014067871A JP2014067871A JP2014212309A JP 2014212309 A JP2014212309 A JP 2014212309A JP 2014067871 A JP2014067871 A JP 2014067871A JP 2014067871 A JP2014067871 A JP 2014067871A JP 2014212309 A JP2014212309 A JP 2014212309A
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- Prior art keywords
- oxide semiconductor
- semiconductor layer
- layer
- oxide
- insulating layer
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
【解決手段】水素を含む窒化物絶縁層212で覆われた第1の酸化物半導体層208aを含む抵抗素子150と、酸化物絶縁層210で覆われ、第1の酸化物半導体層と同じ組成を有し、且つキャリア密度の異なる第2の酸化物半導体層208bを含むトランジスタ100と、を具備する半導体装置である。第1の酸化物半導体層は、不純物濃度を増加させる処理を施すことによって、第2の酸化物半導体層と比較して高いキャリア密度を有しており、また、第1の酸化物半導体層は、島状に加工後の全面に該処理を施されているため、窒化物絶縁層と接する領域と、窒化物絶縁層に設けられたコンタクトホールにおいて電極層と接する領域と、は同じ導電性を有する。
【選択図】図1
Description
本実施の形態では、本発明の一態様の半導体装置、及び半導体装置の作製方法を図1乃至図5を用いて説明する。
図1に半導体装置の構成例を示す。図1(A)は、半導体装置に含まれる抵抗素子150の平面図であり、図1(B)は、半導体装置に含まれるトランジスタ100の平面図であり、図1(C)は、図1(A)のA1−A2及び図1(B)のB1−B2における断面図である。なお、図1(A)及び図1(B)では、煩雑になることを避けるため、抵抗素子150及びトランジスタ100の構成要素の一部(窒化物絶縁層212等)を省略して図示している。なお、以降の平面図においても同様である。
図1に示す半導体装置の作製方法の一例について、図2及び図3を用いて説明する。
図4に、半導体装置に適用可能な抵抗素子150の変形例を示す。図4(A)は、抵抗素子190の平面図であり、図4(B)は、図4(A)のA3−A4における断面図である。
図5(A)に半導体装置に含まれるトランジスタ及び抵抗素子の変形例を示す。図5(A)に示す抵抗素子160は、基板202上に設けられた窒化物絶縁層304と、窒化物絶縁層304上に接する酸化物半導体層208aと、酸化物半導体層208aを覆う酸化物絶縁層210と、酸化物絶縁層210に設けられたコンタクトホールにおいて酸化物半導体層208aと電気的に接続する電極層214a及び電極層214bと、を有する。抵抗素子160に含まれる酸化物半導体層208aは、下面に接して窒化物絶縁層304から水素を供給されることで、低抵抗化された酸化物半導体層である。
図5(B)に半導体装置に含まれる抵抗素子及びトランジスタの変形例を示す。図5(B)に示す抵抗素子170は、基板202上に設けられた窒化物絶縁層304と、窒化物絶縁層304上に接する酸化物半導体層208aと、酸化物半導体層208aを覆う窒化物絶縁層212と、窒化物絶縁層212に設けられたコンタクトホールにおいて酸化物半導体層208aと電気的に接続する電極層214a及び電極層214bと、を有する。すなわち、抵抗素子170に含まれる酸化物半導体層208aは、下面に接して設けられた窒化物絶縁層304及び上面に接して設けられた窒化物絶縁層212の両側から水素を供給されることで、低抵抗化された酸化物半導体層である。
図6(A)に半導体装置に含まれる抵抗素子及びトランジスタの変形例を示す。図6(A)に示す抵抗素子180は、抵抗素子150に含まれる酸化物半導体層208aを、酸化物半導体層207a及び酸化物半導体層209aの積層構造とした例である。その他の構成は、抵抗素子150と同じであり、先の説明を参酌することができる。
本実施の形態では、実施の形態1のトランジスタ及び抵抗素子に適用可能な酸化物半導体層の一例について説明する。
CAAC−OS膜は、例えば、多結晶である酸化物半導体スパッタリング用ターゲットを用い、スパッタリング法によって成膜する。当該スパッタリング用ターゲットにイオンが衝突すると、スパッタリング用ターゲットに含まれる結晶領域がa−b面から劈開し、a−b面に平行な面を有する平板状またはペレット状のスパッタリング粒子として剥離することがある。この場合、当該平板状のスパッタリング粒子が、結晶状態を維持したまま基板に到達することで、CAAC−OS膜を成膜することができる。
本実施の形態では、本発明の一態様である半導体装置について、図面を用いて説明する。なお、本実施の形態では、表示装置を例にして本発明の一態様である半導体装置を説明する。
本実施の形態では、本発明の一態様の半導体装置を表示部に含む電子機器の例について、図9を参照して説明する。
101 画素部
104 走査線駆動回路
106 信号線駆動回路
107 走査線
109 信号線
110 トランジスタ
115 容量線
120 トランジスタ
130 トランジスタ
131_1 トランジスタ
131_2 トランジスタ
132 液晶素子
133_1 容量素子
133_2 容量素子
134 トランジスタ
135 発光素子
150 抵抗素子
160 抵抗素子
170 抵抗素子
180 抵抗素子
190 抵抗素子
202 基板
203 ゲート電極層
204 絶縁層
206 絶縁層
207 酸化物半導体層
207a 酸化物半導体層
207b 酸化物半導体層
208 酸化物半導体膜
208a 酸化物半導体層
208b 酸化物半導体層
208d 酸化物半導体層
209 酸化物半導体層
209a 酸化物半導体層
209b 酸化物半導体層
210 酸化物絶縁層
210a 酸化物絶縁膜
212 窒化物絶縁層
214a 電極層
214b 電極層
214c 電極層
214d 電極層
301 画素
302 開口部
304 窒化物絶縁層
306 酸化物絶縁層
314 絶縁層
316 導電膜
318 配向膜
320 液晶層
342 基板
344 遮光膜
346 有色膜
348 絶縁層
350 導電膜
352 配向膜
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
Claims (5)
- 同一基板上に設けられた抵抗素子及びトランジスタを有し、
前記抵抗素子は、
第1の酸化物半導体層と、
前記第1の酸化物半導体層を覆う窒化物絶縁層と、
前記窒化物絶縁層に設けられたコンタクトホールにおいて、前記第1の酸化物半導体層と電気的に接続する第1の電極及び第2の電極と、を含み、
前記トランジスタは、
ゲート電極層と、
前記ゲート電極層と重なる第2の酸化物半導体層と、
前記ゲート電極層と前記第2の酸化物半導体層との間の絶縁層と、
前記第2の酸化物半導体層を覆う酸化物絶縁層と、
前記酸化物絶縁層に設けられたコンタクトホールにおいて、前記第2の酸化物半導体層と電気的に接続する第3の電極及び第4の電極と、を含み、
前記第1の酸化物半導体層と前記第2の酸化物半導体層は、同一の組成を有し、且つ、前記第1の酸化物半導体層のキャリア密度は、前記第2の酸化物半導体層のキャリア密度よりも高い半導体装置。 - 同一基板上に設けられた抵抗素子及びトランジスタを有し、
前記抵抗素子は、
第1の窒化物絶縁層と、
前記第1の窒化物絶縁層上の第1の酸化物半導体層と、
前記第1の酸化物半導体層を覆う第2の窒化物絶縁層と、
前記第2の窒化物絶縁層に設けられたコンタクトホールにおいて、前記第1の酸化物半導体層と電気的に接続する第1の電極及び第2の電極と、を含み、
前記トランジスタは、
ゲート電極層と、
前記ゲート電極層上の前記第1の窒化物絶縁層と、
前記第1の窒化物絶縁層上の第1の酸化物絶縁層と、
前記第1の窒化物絶縁層及び前記第1の酸化物絶縁層を介して前記ゲート電極層と重なる第2の酸化物半導体層と、
前記第2の酸化物半導体層を覆う第2の酸化物絶縁層と、
前記第2の酸化物絶縁層上の前記第2の窒化物絶縁層と、
前記第2の窒化物絶縁層及び前記第2の酸化物絶縁層に設けられたコンタクトホールにおいて、前記第2の酸化物半導体層と電気的に接続する第3の電極及び第4の電極と、を含み、
前記第1の酸化物半導体層と前記第2の酸化物半導体層は、同一の組成を有し、且つ、前記第1の酸化物半導体層のキャリア密度は、前記第2の酸化物半導体層のキャリア密度よりも高い半導体装置。 - 請求項2において、
前記抵抗素子は、前記第1の窒化物絶縁層と前記第1の酸化物半導体層との間に、前記第1の酸化物絶縁層を含む半導体装置。 - 請求項1乃至3のいずれか一において、
前記抵抗素子のキャリアが流れる経路の長さは、前記トランジスタのキャリアが流れる経路の長さよりも長い半導体装置。 - 請求項1乃至4のいずれか一において、
前記トランジスタを含む画素を複数有する画素部と、
前記抵抗素子を含む駆動回路部と、を有する半導体装置。
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JP2017227746A (ja) * | 2016-06-22 | 2017-12-28 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、および電子機器 |
JP2019009435A (ja) * | 2017-06-27 | 2019-01-17 | エルジー ディスプレイ カンパニー リミテッド | 酸化物半導体層を含む薄膜トランジスタ、その製造方法及び表示装置 |
JP2021057484A (ja) * | 2019-09-30 | 2021-04-08 | エイブリック株式会社 | 半導体装置及びその製造方法 |
JP2022002342A (ja) * | 2014-11-20 | 2022-01-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11417774B2 (en) | 2017-05-31 | 2022-08-16 | Lg Display Co., Ltd. | Thin film transistor, gate driver including the same, and display device including the gate driver |
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US20140306219A1 (en) * | 2013-04-10 | 2014-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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JP2015065202A (ja) * | 2013-09-24 | 2015-04-09 | 株式会社東芝 | 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法 |
JP2015179247A (ja) | 2013-10-22 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
KR20170098839A (ko) | 2014-12-29 | 2017-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 가지는 표시 장치 |
WO2016189414A1 (en) | 2015-05-22 | 2016-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
US9852926B2 (en) | 2015-10-20 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
TWI769995B (zh) | 2016-06-24 | 2022-07-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置、電子裝置 |
KR102240021B1 (ko) | 2017-03-03 | 2021-04-14 | 삼성전자주식회사 | 저항을 포함하는 반도체 소자 |
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- 2014-03-24 KR KR1020140033981A patent/KR20140120823A/ko not_active Application Discontinuation
- 2014-03-28 JP JP2014067871A patent/JP2014212309A/ja not_active Withdrawn
- 2014-04-02 US US14/243,257 patent/US20140299874A1/en not_active Abandoned
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JP2022002342A (ja) * | 2014-11-20 | 2022-01-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7153118B2 (ja) | 2014-11-20 | 2022-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2022179588A (ja) * | 2014-11-20 | 2022-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7394942B2 (ja) | 2014-11-20 | 2023-12-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017227746A (ja) * | 2016-06-22 | 2017-12-28 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、および電子機器 |
US11417774B2 (en) | 2017-05-31 | 2022-08-16 | Lg Display Co., Ltd. | Thin film transistor, gate driver including the same, and display device including the gate driver |
US11791418B2 (en) | 2017-05-31 | 2023-10-17 | Lg Display Co., Ltd. | Method for manufacturing thin film transistor, and electronic device |
JP2019009435A (ja) * | 2017-06-27 | 2019-01-17 | エルジー ディスプレイ カンパニー リミテッド | 酸化物半導体層を含む薄膜トランジスタ、その製造方法及び表示装置 |
US10608117B2 (en) | 2017-06-27 | 2020-03-31 | Lg Display Co., Ltd. | Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same |
US11201248B2 (en) | 2017-06-27 | 2021-12-14 | Lg Display Co., Ltd. | Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same |
JP2021057484A (ja) * | 2019-09-30 | 2021-04-08 | エイブリック株式会社 | 半導体装置及びその製造方法 |
JP7390841B2 (ja) | 2019-09-30 | 2023-12-04 | エイブリック株式会社 | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI635613B (zh) | 2018-09-11 |
US20140299874A1 (en) | 2014-10-09 |
TW201442243A (zh) | 2014-11-01 |
KR20140120823A (ko) | 2014-10-14 |
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