DE69624305D1 - Halbleiteranordnung mit einem ligbt element - Google Patents
Halbleiteranordnung mit einem ligbt elementInfo
- Publication number
- DE69624305D1 DE69624305D1 DE69624305T DE69624305T DE69624305D1 DE 69624305 D1 DE69624305 D1 DE 69624305D1 DE 69624305 T DE69624305 T DE 69624305T DE 69624305 T DE69624305 T DE 69624305T DE 69624305 D1 DE69624305 D1 DE 69624305D1
- Authority
- DE
- Germany
- Prior art keywords
- ligbt
- semiconductor arrangement
- semiconductor
- arrangement
- ligbt element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP95200726 | 1995-03-23 | ||
| PCT/IB1996/000192 WO1996029741A2 (en) | 1995-03-23 | 1996-03-11 | Semiconductor device provided with an ligbt element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69624305D1 true DE69624305D1 (de) | 2002-11-21 |
| DE69624305T2 DE69624305T2 (de) | 2003-06-26 |
Family
ID=8220121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69624305T Expired - Fee Related DE69624305T2 (de) | 1995-03-23 | 1996-03-11 | Halbleiteranordnung mit einem ligbt element |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5796146A (de) |
| EP (1) | EP0761016B1 (de) |
| JP (1) | JPH10501103A (de) |
| DE (1) | DE69624305T2 (de) |
| TW (1) | TW298665B (de) |
| WO (1) | WO1996029741A2 (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000029449A (ko) * | 1997-05-23 | 2000-05-25 | 롤페스 요하네스 게라투스 알베르투스 | 측방향엠오에스트랜지스터소자 |
| US6144070A (en) * | 1997-08-29 | 2000-11-07 | Texas Instruments Incorporated | High breakdown-voltage transistor with electrostatic discharge protection |
| US6252278B1 (en) * | 1998-05-18 | 2001-06-26 | Monolithic Power Systems, Inc. | Self-aligned lateral DMOS with spacer drift region |
| US6028337A (en) * | 1998-11-06 | 2000-02-22 | Philips North America Corporation | Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region |
| DE102004041622A1 (de) * | 2003-08-29 | 2005-03-24 | Fuji Electric Holdings Co. Ltd., Kawasaki | Halbleiterbauteil |
| WO2005093842A1 (ja) * | 2004-03-26 | 2005-10-06 | Sanken Electric Co., Ltd. | 半導体装置 |
| JP2007049061A (ja) * | 2005-08-12 | 2007-02-22 | Toshiba Corp | 半導体装置 |
| US7763937B2 (en) * | 2006-11-15 | 2010-07-27 | Freescale Semiconductor, Inc. | Variable resurf semiconductor device and method |
| US8669640B2 (en) * | 2009-07-14 | 2014-03-11 | Freescale Semiconductor, Inc. | Bipolar transistor |
| JP2011100847A (ja) * | 2009-11-05 | 2011-05-19 | Sharp Corp | 半導体装置及びその製造方法 |
| JP6455169B2 (ja) * | 2015-01-19 | 2019-01-23 | 株式会社豊田中央研究所 | 半導体装置 |
| JP6837384B2 (ja) * | 2017-05-23 | 2021-03-03 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN109994546B (zh) * | 2017-12-29 | 2022-05-27 | 中芯国际集成电路制造(上海)有限公司 | 一种横向双扩散金属氧化物半导体器件、电子装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4682195A (en) * | 1985-09-30 | 1987-07-21 | General Electric Company | Insulated gate device with configured emitter contact pad |
| US4963951A (en) * | 1985-11-29 | 1990-10-16 | General Electric Company | Lateral insulated gate bipolar transistors with improved latch-up immunity |
| EP0361589B1 (de) * | 1988-09-22 | 2001-12-19 | Koninklijke Philips Electronics N.V. | Laterale bipolare Transistoranordnungen mit isolierter Steuerelektrode mit geteilter Anode |
| JP2650519B2 (ja) * | 1991-07-25 | 1997-09-03 | 株式会社日立製作所 | 横型絶縁ゲートトランジスタ |
| US5227653A (en) * | 1991-08-07 | 1993-07-13 | North American Philips Corp. | Lateral trench-gate bipolar transistors |
-
1996
- 1996-03-11 EP EP96903176A patent/EP0761016B1/de not_active Expired - Lifetime
- 1996-03-11 WO PCT/IB1996/000192 patent/WO1996029741A2/en active IP Right Grant
- 1996-03-11 JP JP8528227A patent/JPH10501103A/ja active Pending
- 1996-03-11 DE DE69624305T patent/DE69624305T2/de not_active Expired - Fee Related
- 1996-03-22 US US08/621,758 patent/US5796146A/en not_active Expired - Fee Related
- 1996-04-30 TW TW085105156A patent/TW298665B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP0761016B1 (de) | 2002-10-16 |
| DE69624305T2 (de) | 2003-06-26 |
| TW298665B (de) | 1997-02-21 |
| JPH10501103A (ja) | 1998-01-27 |
| EP0761016A1 (de) | 1997-03-12 |
| WO1996029741A2 (en) | 1996-09-26 |
| WO1996029741A3 (en) | 1997-01-03 |
| US5796146A (en) | 1998-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |