JP5771079B2 - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- JP5771079B2 JP5771079B2 JP2011142635A JP2011142635A JP5771079B2 JP 5771079 B2 JP5771079 B2 JP 5771079B2 JP 2011142635 A JP2011142635 A JP 2011142635A JP 2011142635 A JP2011142635 A JP 2011142635A JP 5771079 B2 JP5771079 B2 JP 5771079B2
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- Prior art keywords
- transistor
- film
- wiring
- potential
- oxide semiconductor
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- G09G2320/02—Improving the quality of display appearance
- G09G2320/0261—Improving the quality of display appearance in the context of movement of objects on the screen or movement of the observer relative to the screen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Description
図1を用いて、本発明の固体撮像装置、または半導体表示装置が有するフォトセンサの接続構成について説明する。
本実施の形態では、図2(A)とは異なるフォトセンサ101の構成について説明する。
本実施の形態では、シリコンを用いたトランジスタと、酸化物半導体を用いたトランジスタとを有する、本発明の一態様に係る固体撮像装置または半導体表示装置の作製方法について説明する。
本実施の形態では、実施の形態3とは異なる構造を有する、酸化物半導体膜を用いたトランジスタについて説明する。
本実施の形態では、トランジスタの構成例について説明する。なお、上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、本実施の形態での繰り返しの説明は省略する。なお、同じ箇所の詳細な説明も省略する。
102 フォトダイオード
103 増幅回路
104 トランジスタ
105 トランジスタ
106 トランジスタ
107 トランジスタ
120 画素
121 表示素子
122 液晶素子
123 トランジスタ
124 容量素子
201 導電膜
202 導電膜
203 導電膜
204 画素電極
205 導電膜
206 導電膜
210 導電膜
211 導電膜
212 導電膜
213 導電膜
214 導電膜
215 半導体膜
216 半導体膜
217 半導体膜
218 導電膜
219 導電膜
220 導電膜
221 導電膜
222 導電膜
223 導電膜
224 導電膜
225 導電膜
226 導電膜
227 導電膜
228 ゲート絶縁膜
231 絶縁膜
232 基板
233 対向電極
234 液晶層
235 遮蔽膜
236 基板
250 活性層
251 基板
253 活性層
300 露光期間
301 読み出し期間
302 電荷保持期間
700 基板
701 絶縁膜
702 半導体膜
703 半導体膜
704 フォトダイオード
705 nチャネル型トランジスタ
707 ゲート電極
708 絶縁膜
711 配線
712 絶縁膜
713 ゲート電極
714 ゲート絶縁膜
715 酸化物半導体膜
716 導電膜
717 導電膜
718 導電膜
719 導電膜
720 導電膜
721 導電膜
722 絶縁膜
724 トランジスタ
727 p型の導電性を有する領域
728 i型の導電性を有する領域
729 n型の導電性を有する領域
730 ゲート電極
731 ゲート絶縁膜
732 酸化物半導体膜
733 チャネル保護膜
734 導電膜
735 導電膜
736 絶縁膜
741 ゲート電極
742 ゲート絶縁膜
743 導電膜
744 導電膜
745 酸化物半導体膜
746 絶縁膜
1601 パネル
1602 拡散板
1603 プリズムシート
1604 拡散板
1605 導光板
1606 反射板
1607 光源
1608 バックライト
1609 回路基板
1610 FPC
1611 FPC
1612 指
2400 基板
2401 ゲート電極
2402 ゲート絶縁膜
2403 酸化物半導体膜
2405a ソース電極
2405b ドレイン電極
2406 チャネル保護膜
2407 絶縁膜
2409 絶縁膜
2411 ゲート電極
2412 バックゲート電極
2413 ゲート絶縁膜
2414 ゲート絶縁膜
2436 下地膜
2450 トランジスタ
2460 トランジスタ
2470 トランジスタ
2480 トランジスタ
5001 筐体
5002 表示部
5003 支持台
5101 筐体
5102 表示部
5103 操作キー
5201 筐体
5202 表示部
5203 硬貨投入口
5204 紙幣投入口
5205 カード投入口
5206 通帳投入口
5301 筐体
5302 筐体
5303 表示部
5304 表示部
5305 マイクロホン
5306 スピーカー
5307 操作キー
5308 スタイラス
5401 筐体
5402 表示部
5403 音声入力部
5404 音声出力部
5405 操作キー
5406 受光部
Claims (4)
- マトリクス状に設けられた複数のユニットを有し、
前記複数のユニットはそれぞれ、フォトダイオードと、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、を有し、
前記フォトダイオードの端子の一方は、第1の配線と電気的に接続され、
前記フォトダイオードの端子の他方は、前記第1のトランジスタを介して、前記第2のトランジスタのゲートと電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、第2の配線と電気的に接続され、
前記第2のトランジスタのソース又はドレインの他方は、前記第3のトランジスタを介して、第3の配線と電気的に接続され、
前記第3の配線は、前記フォトダイオードに照射された光に対応する出力信号を伝達する機能を有し、
前記第1のトランジスタのゲートは、第4の配線と電気的に接続され、
前記第4の配線は、前記第1のトランジスタのオン状態又はオフ状態を選択する信号を伝達する機能を有し、
前記第3のトランジスタのゲートは、第5の配線と電気的に接続され、
前記第5の配線は、前記第3のトランジスタのオン状態又はオフ状態を選択する信号を伝達する機能を有し、
グローバルシャッタ方式で駆動する機能を有する撮像装置であって、
前記第1のトランジスタのチャネル形成領域は、酸化物半導体層に設けられ、
前記チャネル形成領域のキャリア密度は、1×10 11 /cm 3 未満であり、
前記複数のユニットにおいて、前記第4の配線は電気的に接続されていることを特徴とする撮像装置。 - マトリクス状に設けられた複数のユニットを有し、
前記複数のユニットはそれぞれ、フォトダイオードと、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、を有し、
前記フォトダイオードの端子の一方は、第1の配線と電気的に接続され、
前記フォトダイオードの端子の他方は、前記第1のトランジスタを介して、前記第2のトランジスタのゲートと電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、第2の配線と電気的に接続され、
前記第2のトランジスタのソース又はドレインの他方は、前記第3のトランジスタを介して、第3の配線と電気的に接続され、
前記第3の配線は、前記フォトダイオードに照射された光に対応する出力信号を伝達する機能を有し、
前記第1のトランジスタのゲートは、第4の配線と電気的に接続され、
前記第4の配線は、前記第1のトランジスタのオン状態又はオフ状態を選択する信号を伝達する機能を有し、
前記第3のトランジスタのゲートは、第5の配線と電気的に接続され、
前記第5の配線は、前記第3のトランジスタのオン状態又はオフ状態を選択する信号を伝達する機能を有し、
グローバルシャッタ方式で駆動する機能を有する撮像装置であって、
前記第1のトランジスタのチャネル形成領域は、酸化物半導体層に設けられ、
前記チャネル形成領域のキャリア密度は、1×10 11 /cm 3 未満であり、
前記複数のユニットにおいて、前記第1の配線は電気的に接続されていることを特徴とする撮像装置。 - 請求項1又は請求項2において、
前記チャネル形成領域の水素濃度は、5×10 19 /cm 3 以下であることを特徴とする撮像装置。 - 請求項1乃至請求項3のいずれか一において、
前記第1のトランジスタのチャネル幅あたりのオフ電流は、ソース電極とドレイン電極間の電圧が1Vから10Vの範囲において100zA/μm以下であることを特徴とする撮像装置。
Priority Applications (1)
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JP2011142635A JP5771079B2 (ja) | 2010-07-01 | 2011-06-28 | 撮像装置 |
Applications Claiming Priority (3)
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JP2010150844 | 2010-07-01 | ||
JP2010150844 | 2010-07-01 | ||
JP2011142635A JP5771079B2 (ja) | 2010-07-01 | 2011-06-28 | 撮像装置 |
Related Child Applications (1)
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