JP2016092413A - 撮像装置および電子機器 - Google Patents
撮像装置および電子機器 Download PDFInfo
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- JP2016092413A JP2016092413A JP2015211421A JP2015211421A JP2016092413A JP 2016092413 A JP2016092413 A JP 2016092413A JP 2015211421 A JP2015211421 A JP 2015211421A JP 2015211421 A JP2015211421 A JP 2015211421A JP 2016092413 A JP2016092413 A JP 2016092413A
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- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Inorganic materials [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】第1の層と、第2の層と、第3の層と、を有する撮像装置であって、第2の層は、第1の層と第3の層との間に設けられ、第1の層は、回折格子を有し、第2の層は、光電変換素子を有し、第3の層は、活性層に酸化物半導体を有するトランジスタを有する構成とする。
【選択図】図1
Description
本実施の形態では、本発明の一態様である撮像装置について、図面を参照して説明する。
本実施の形態では、実施の形態1で説明した回路90について説明する。
本実施の形態では、実施の形態1で説明したグローバルシャッタ方式およびローリングシャッタ方式の詳細について説明する。
本実施の形態では、本発明の一態様に用いることのできる酸化物半導体を有するトランジスタについて図面を用いて説明する。なお、本実施の形態における図面では、明瞭化のために一部の要素を拡大、縮小、または省略して図示している。
本実施の形態では、実施の形態4に示したトランジスタの構成要素について詳細を説明する。
以下では、本発明の一態様に用いることのできる酸化物半導体膜の構造について説明する。
(実施の形態7)
22 保持動作
23 読み出し動作
40 シリコン基板
41 絶縁層
41a 絶縁層
41b 絶縁層
51 トランジスタ
52 トランジスタ
53 トランジスタ
54 トランジスタ
55 トランジスタ
56 トランジスタ
58 活性層
59 容量素子
60 光電変換素子
61 光電変換層
62 透光性導電層
63 半導体層
64 半導体層
65 半導体層
66 電極
66a 導電層
66b 導電層
67 隔壁
71 配線
72 配線
74 配線
75 配線
76 配線
77 配線
77a 導電層
77b 導電層
78 配線
79 配線
80 絶縁層
81 導電体
90 回路
91 画素アレイ
101 トランジスタ
102 トランジスタ
103 トランジスタ
104 トランジスタ
105 トランジスタ
106 トランジスタ
107 トランジスタ
108 トランジスタ
109 トランジスタ
110 トランジスタ
111 トランジスタ
112 トランジスタ
115 基板
120 絶縁層
130 酸化物半導体層
130a 酸化物半導体層
130b 酸化物半導体層
130c 酸化物半導体層
140 導電層
141 導電層
142 導電層
150 導電層
151 導電層
152 導電層
160 絶縁層
170 導電層
171 導電層
172 導電層
173 導電層
175 絶縁層
180 絶縁層
231 領域
232 領域
233 領域
311 配線
312 配線
313 配線
314 配線
315 配線
316 配線
317 配線
331 領域
332 領域
333 領域
334 領域
335 領域
501 信号
502 信号
503 信号
504 信号
505 信号
506 信号
507 信号
508 信号
509 信号
510 期間
511 期間
520 期間
531 期間
610 期間
611 期間
612 期間
621 期間
622 期間
623 期間
631 期間
701 信号
702 信号
703 信号
704 信号
705 信号
901 筐体
902 筐体
903 表示部
904 表示部
905 マイク
906 スピーカー
907 操作キー
908 スタイラス
909 カメラ
911 筐体
912 表示部
919 カメラ
931 筐体
932 表示部
933 リストバンド
939 カメラ
951 筐体
952 表示部
954 スピーカー
955 ボタン
956 入出力端子
957 マイク
959 カメラ
961 車体
962 車輪
963 ダッシュボード
964 ライト
965 カメラ
1100 層
1200 層
1400 層
1500 層
1600 層
2500 絶縁層
2510 遮光層
2520 有機樹脂層
2530 カラーフィルタ
2530a カラーフィルタ
2530b カラーフィルタ
2530c カラーフィルタ
2540 マイクロレンズアレイ
2550 光学変換層
2560 絶縁層
Claims (7)
- 第1の層と、第2の層と、第3の層と、を有する撮像装置であって、
前記第2の層は、前記第1の層と前記第3の層との間に設けられ、
前記第1の層は、回折格子を有し、
前記第2の層は、光電変換素子を有し、
前記第3の層は、活性層に酸化物半導体を有するトランジスタを有することを特徴とする撮像装置。 - 第1の層と、第2の層と、第3の層と、第4の層と、を有する撮像装置であって、
前記第1の層、前記第2の層、前記第3の層および前記第4の層は、当該順序の積層で設けられ、
前記第1の層は、回折格子を有し、
前記第2の層は、光電変換素子を有し、
前記第3の層は、活性層に酸化物半導体を有するトランジスタを有し、
前記第4の層は、活性領域または活性層にシリコンを有するトランジスタを有することを特徴とする撮像装置。 - 請求項1または2において、
前記第3の層は、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、を有し、
前記第1のトランジスタのソース電極またはドレイン電極の一方は、前記光電変換素子の一方の電極と電気的に接続され、
前記第1のトランジスタのソース電極またはドレイン電極の他方は、前記第2のトランジスタのゲート電極と電気的に接続され、
前記第1のトランジスタのソース電極またはドレイン電極の他方は、前記第3のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第2のトランジスタのソース電極またはドレイン電極の一方は、前記第4のトランジスタのソース電極またはドレイン電極の一方と電気的に接続されていることを特徴とする撮像装置。 - 請求項3において、
前記第1のトランジスタのソース電極またはドレイン電極の他方は、容量素子の一方の電極と電気的に接続されていることを特徴とする撮像装置。 - 請求項1乃至4のいずれか一項において、
前記酸化物半導体は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有することを特徴とする撮像装置。 - 請求項1乃至5のいずれか一項において、
前記光電変換素子は、光電変換層にセレンまたはセレンを含む化合物を有することを特徴とする撮像装置。 - 請求項1乃至6のいずれか一項に記載の撮像装置と、
表示装置と、
を有することを特徴とする電子機器。
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US20160126275A1 (en) | 2016-05-05 |
JP2020170878A (ja) | 2020-10-15 |
US9761730B2 (en) | 2017-09-12 |
US20180013010A1 (en) | 2018-01-11 |
JP2024050789A (ja) | 2024-04-10 |
JP7432644B2 (ja) | 2024-02-16 |
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US10256345B2 (en) | 2019-04-09 |
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