JP2016197722A - 撮像装置および電子機器 - Google Patents
撮像装置および電子機器 Download PDFInfo
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- JP2016197722A JP2016197722A JP2016073850A JP2016073850A JP2016197722A JP 2016197722 A JP2016197722 A JP 2016197722A JP 2016073850 A JP2016073850 A JP 2016073850A JP 2016073850 A JP2016073850 A JP 2016073850A JP 2016197722 A JP2016197722 A JP 2016197722A
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- transistor
- wiring
- film
- oxide semiconductor
- insulating film
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Inorganic materials [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】フォトダイオードと、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、を有する撮像装置であって、第1のトランジスタおよび第3のトランジスタのバックゲート電極には、各トランジスタのソース電位より高い電位および各トランジスタのソース電位より低い電位を切り替えて供給することのできる配線と電気的に接続されており、第2のトランジスタのバックゲート電極には、第3のトランジスタのソース電位より高い電位を供給することのできる配線と電気的に接続されている。
【選択図】図1
Description
本実施の形態では、本発明の一態様である撮像装置の回路構造および駆動方法について、図面を参照して説明する。
本実施の形態では、本発明の一態様に用いることができる撮像装置全体の構成について、図17を用いて説明する。
本実施の形態では、本発明の一態様に用いることができる撮像装置の画素の構成について、図19乃至図29を用いて説明する。
本実施の形態では、本発明の一態様に用いることのできる酸化物半導体を有するトランジスタについて図30乃至図38を用いて説明する。なお、本実施の形態における図面では、明瞭化のために一部の要素を拡大、縮小、または省略して図示している。
本実施の形態では、実施の形態4に示したトランジスタの構成要素について詳細を説明する。
本実施の形態では、本発明の一態様に用いることのできる酸化物半導体膜の構造について説明する。
(実施の形態7)
100a 画素
100b 画素
100c 画素
100d 画素
100e 画素
100f 画素
111 フォトダイオード
111a フォトダイオード
111b フォトダイオード
111c フォトダイオード
111d フォトダイオード
120 絶縁膜
121 トランジスタ
122 トランジスタ
123 トランジスタ
124 トランジスタ
124a トランジスタ
124b トランジスタ
124c トランジスタ
124d トランジスタ
125 トランジスタ
130 酸化物半導体膜
130a 絶縁膜
130b 酸化物半導体膜
131 保持容量
141 配線
142 配線
143 配線
144 配線
145 配線
146 配線
147 配線
148 配線
149 配線
150 導電膜
151 配線
152 配線
154 配線
154a 配線
154b 配線
154c 配線
154d 配線
155 配線
161 配線
162 配線
163 配線
164 配線
165 配線
211 撮像動作
212 データ保持動作
213 読み出し動作
2700 画素アレイ
2730 回路
2740 回路
2750 回路
2751 バイアストランジスタアレイ
2760 回路
2761 バイアストランジスタアレイ
3040 シリコン基板
3041 絶縁膜
3041a 絶縁膜
3041b 絶縁膜
3042 絶縁膜
3042a 絶縁膜
3042b 絶縁膜
3055 トランジスタ
3056 トランジスタ
3059 活性層
3061 光電変換膜
3062 透光性導電膜
3063 半導体膜
3064 半導体膜
3065 半導体膜
3066 電極
3067 隔壁
3071 配線
3072 配線
3074 配線
3075 配線
3076 配線
3077 配線
3078 配線
3079 配線
3080 絶縁膜
3081 導電膜
3200 領域
3300 領域
3400 領域
3500 絶縁膜
3510 遮光層
3520 有機樹脂層
3530a カラーフィルタ
3530b カラーフィルタ
3530c カラーフィルタ
3540 マイクロレンズアレイ
3550 光学変換層
4101 トランジスタ
4102 トランジスタ
4103 トランジスタ
4104 トランジスタ
4105 トランジスタ
4106 トランジスタ
4107 トランジスタ
4108 トランジスタ
4109 トランジスタ
4110 トランジスタ
4111 トランジスタ
4112 トランジスタ
4113 トランジスタ
4115 基板
4120 絶縁膜
4130 酸化物半導体膜
4130a 絶縁膜
4130b 酸化物半導体膜
4130c 絶縁膜
4140 導電膜
4141 導電膜
4142 導電膜
4150 導電膜
4151 導電膜
4152 導電膜
4160 絶縁膜
4170 導電膜
4171 導電膜
4172 導電膜
4173 導電膜
4175 絶縁膜
4180 絶縁膜
4190 絶縁膜
4231 領域
4232 領域
4233 領域
4234 領域
4235 領域
4331 領域
4332 領域
4333 領域
4334 領域
4335 領域
6901 筐体
6902 筐体
6903 表示部
6904 表示部
6905 マイク
6906 スピーカー
6907 操作キー
6908 スタイラス
6909 カメラ
6911 筐体
6912 表示部
6919 カメラ
6931 筐体
6932 表示部
6933 リストバンド
6939 カメラ
6951 筐体
6952 表示部
6954 スピーカー
6955 ボタン
6956 入出力端子
6957 マイク
6959 カメラ
6961 筐体
6962 シャッターボタン
6963 マイク
6965 レンズ
6967 発光部
6971 筐体
6972 筐体
6973 表示部
6974 操作キー
6975 レンズ
6976 接続部
Claims (12)
- フォトダイオードと、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、を有する画素を有し、
前記第1のトランジスタのソース電極またはドレイン電極の一方は、前記フォトダイオードの一方の電極と電気的に接続され、
前記第1のトランジスタのソース電極または前記ドレイン電極の他方は、前記第2のトランジスタのゲート電極と電気的に接続され、
前記第1のトランジスタのソース電極またはドレイン電極の他方は、前記第3のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第2のトランジスタのソース電極またはドレイン電極の一方は、前記第4のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第1のトランジスタ、前記第2のトランジスタおよび前記第3のトランジスタはバックゲート電極を有し、
前記第1のトランジスタおよび前記第3のトランジスタのバックゲート電極は、各トランジスタのソース電位より高い電位および各トランジスタのソース電位より低い電位を切り替えて供給することのできる配線と電気的に接続されており、前記第2のトランジスタのバックゲート電極は、前記第2のトランジスタのソース電位より高い電位を供給することのできる配線と電気的に接続されていることを特徴とする撮像装置。 - 前記第1のトランジスタおよび前記第3のトランジスタのバックゲート電極は第1の配線と電気的に接続され、
前記第2のトランジスタのバックゲート電極は第2の配線と電気的に接続され、
前記第1の配線および前記第2の配線は、同じ行または列に配置された前記画素の他、隣接する行または列の、一方の側に配置された前記画素と共有されることを特徴とする、
請求項1に記載の撮像装置。 - 前記第1の配線は、隣接する行または列のうち、上面または下面から見て前記第2のトランジスタを間に挟まない側に配置された前記画素と共有され、
前記第2の配線は、隣接する行または列のうち、前記第1のトランジスタおよび前記第3のトランジスタを間に挟まない側に配置された前記画素と共有されることを特徴とする、
請求項2に記載の撮像装置。 - 画素を複数有し、
前記画素はフォトダイオードと、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、を有し、
前記第1のトランジスタのソース電極またはドレイン電極の一方は、前記フォトダイオードの一方の電極と電気的に接続され、
前記第1のトランジスタのソース電極または前記ドレイン電極の他方は、前記第2のトランジスタのゲート電極と電気的に接続され、
前記第1のトランジスタのソース電極またはドレイン電極の他方は、前記第3のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第2のトランジスタのソース電極またはドレイン電極の一方は、前記第4のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第1のトランジスタ、前記第2のトランジスタ、前記第3のトランジスタおよび前記第4のトランジスタはバックゲート電極を有し、
前記第1のトランジスタおよび前記第3のトランジスタのバックゲート電極は、各トランジスタのソース電位より高い電位および各トランジスタのソース電位より低い電位を切り替えて供給することのできる配線と電気的に接続されており、前記第2のトランジスタおよび前記第4のトランジスタのバックゲート電極は、各トランジスタのソース電位より高い電位を供給することのできる配線と電気的に接続されていることを特徴とする撮像装置。 - 前記第1のトランジスタおよび前記第3のトランジスタのバックゲート電極は第1の配線と電気的に接続され、
前記第2のトランジスタおよび前記第4のトランジスタのバックゲート電極は第2の配線と電気的に接続され、
前記第1の配線および前記第2の配線は、同じ行または列に配置された前記画素の他、隣接する行または列の、一方の側に配置された前記画素と共有されることを特徴とする、
請求項4に記載の撮像装置。 - 前記第1の配線は、隣接する行または列のうち、上面または下面から見て前記第2のトランジスタおよび前記第4のトランジスタを間に挟まない側に配置された前記画素と共有され、
前記第2の配線は、隣接する行または列のうち、前記第1のトランジスタおよび前記第3のトランジスタを間に挟まない側に配置された前記画素と共有されることを特徴とする、
請求項5に記載の撮像装置。 - 前記第1のトランジスタ、前記第3のトランジスタおよび前記第4のトランジスタが有するバックゲート電極は第1の配線と電気的に接続され、
前記第2のトランジスタのバックゲート電極は第2の配線と電気的に接続され、
前記第1の配線および前記第2の配線は、同じ行または列に配置された前記画素の他、隣接する行または列の、一方の側に配置された前記画素と共有されることを特徴とする、
請求項4に記載の撮像装置。 - 前記第1の配線および前記第2の配線は、隣接する行または列のうち、上面または下面から見て前記第2のトランジスタを間に挟まない側に配置された前記画素と共有され、
前記第2の配線は、隣接する行または列のうち、前記第1のトランジスタ、前記第3のトランジスタおよび前記第4のトランジスタを間に挟まない側に配置された前記画素と共有されることを特徴とする、
請求項7に記載の撮像装置。 - 第5のトランジスタを有し、
前記第5のトランジスタのソース電極またはドレイン電極の一方は前記第2のトランジスタのソース電極またはドレイン電極の他方と電気的に接続され、
前記第5のトランジスタはバックゲート電極を有し、
前記第5のトランジスタのバックゲート電極には、前記第5のトランジスタのソース電位より高い電位を供給することのできる配線と電気的に接続されていることを特徴とする、
請求項1乃至請求項8のいずれか一項に記載の撮像装置。 - 前記第1のトランジスタ、前記第2のトランジスタ、前記第3のトランジスタ、前記第4のトランジスタおよび前記第5のトランジスタが有する活性層が、酸化物半導体を有することを特徴とする、
請求項1乃至請求項9のいずれか一項に記載の撮像装置。 - 前記フォトダイオードは、光電変換膜にセレンを有することを特徴とする、
請求項1乃至請求項10のいずれか一項に記載の撮像装置。 - 請求項1乃至請求項11のいずれか一項に記載の撮像装置と、表示装置と、を有することを特徴とする電子機器。
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