JP2011187944A - 半導体装置およびその駆動方法 - Google Patents
半導体装置およびその駆動方法 Download PDFInfo
- Publication number
- JP2011187944A JP2011187944A JP2011025070A JP2011025070A JP2011187944A JP 2011187944 A JP2011187944 A JP 2011187944A JP 2011025070 A JP2011025070 A JP 2011025070A JP 2011025070 A JP2011025070 A JP 2011025070A JP 2011187944 A JP2011187944 A JP 2011187944A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- gate
- potential
- signal line
- photosensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 181
- 238000000034 method Methods 0.000 title claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 39
- 238000003384 imaging method Methods 0.000 claims abstract description 19
- 238000009825 accumulation Methods 0.000 claims description 24
- 230000001186 cumulative effect Effects 0.000 claims description 9
- 238000012546 transfer Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 145
- 238000010438 heat treatment Methods 0.000 description 34
- 239000000758 substrate Substances 0.000 description 24
- 239000001257 hydrogen Substances 0.000 description 23
- 229910052739 hydrogen Inorganic materials 0.000 description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910007541 Zn O Inorganic materials 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/68—Control of cameras or camera modules for stable pick-up of the scene, e.g. compensating for camera body vibrations
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】フォトダイオード204は光の強度に応じて電気信号を生成する機能を有し、第1のトランジスタ205はゲートに電荷を蓄積し、蓄積された電荷を出力信号に変換する機能を有し、第2のトランジスタ207はフォトダイオード204から生成された電気信号を第1のトランジスタ205のゲートに転送し、かつ、第1のトランジスタ205のゲートに蓄積された電荷を保持する機能を有する。第1のトランジスタ205はバックゲートを有し、第2のトランジスタ207は、酸化物半導体層により形成されたチャネル形成領域を有する。
【選択図】図1
Description
本実施の形態では、開示する発明の一態様である半導体装置の一例について、図1を参照して説明する。
本実施の形態では、開示する発明の一態様である半導体装置の一例について、図2〜図3を参照して説明する。本実施の形態では、半導体装置が表示装置である例を示す。
本実施の形態は、図1に示した半導体装置の動作の一例、または図2、図3に示した表示装置の動作の一例について、図4を参照して説明する。図4は、図1、または図2、図3に示すフォトセンサ106の読み出し動作に関するタイミングチャートの一例である。
本実施の形態では、複数のフォトセンサを有する半導体装置の駆動方法の一例について説明する。
本実施の形態では、図1または図3におけるフォトセンサ106の回路構成の変形例について説明する。
本実施の形態では、開示する発明の一態様である半導体装置が有するトランジスタの一例について説明する。具体的には、図1または図3に示したトランジスタ207、図3に示したトランジスタ201のようにチャネル形成領域が酸化物半導体層により形成されたトランジスタの一例について説明する。
トランジスタ(例えば図1または図3に示すトランジスタ207)は、チャネル形成領域が酸化物半導体層によって構成されるトランジスタである。該酸化物半導体層は、トランジスタの電気的特性の変動要因となる水素、水分、水酸基又は水素化物などのドナーとなりうる不純物が徹底的に取り除かれ、可能な限り含まれる不純物の濃度が小さくされ、かつ不純物を排除するステップによって同時に減少してしまう酸化物半導体の主成分材料である酸素が供給されることによって、高純度化され、電気的にI型(真性)或いは実質的にI型(真性)化された酸化物半導体層である。なお、当該酸化物半導体層を構成する酸化物半導体は3.0eV以上のバンドギャップを有する。
チャネル形成領域が酸化物半導体層により形成されたトランジスタの作製方法の一例について、図8を参照して説明する。
101 画素回路
102 表示素子制御回路
103 フォトセンサ制御回路
104 画素
105 表示素子
106 フォトセンサ
107 表示素子駆動回路
108 表示素子駆動回路
109 フォトセンサ読み出し回路
110 フォトセンサ駆動回路
200 プリチャージ回路
201 トランジスタ
202 保持容量
203 液晶素子
204 フォトダイオード
205 トランジスタ
206 トランジスタ
207 トランジスタ
208 ゲート信号線
209 ゲート信号線
210 フォトダイオードリセット信号線
211 ゲート信号線
212 ビデオデータ信号線
213 フォトセンサ基準信号線
214 フォトセンサ出力信号線
215 ゲート信号線
216 トランジスタ
217 プリチャージ信号線
218 バックゲート信号線
301 信号
302 信号
303 信号
304 信号
305 信号
306 信号
307 信号
400 基板
402 ゲート絶縁層
403 保護絶縁層
410 トランジスタ
411 ゲート電極層
413 チャネル形成領域
416 酸化物絶縁層
420 トランジスタ
430 酸化物半導体膜
431 酸化物半導体層
441 バックゲート
415a ソース電極層又はドレイン電極層
415b ソース電極層又はドレイン電極層
501 信号
502 信号
503 信号
504 信号
505 信号
506 信号
507 信号
508 信号
509 信号
510 期間
511 期間
512 期間
513 期間
601 トランジスタ
801 信号
802 信号
803 信号
804 信号
805 信号
806 信号
807 信号
808 信号
809 信号
810 期間
811 期間
812 期間
813 期間
Claims (7)
- フォトダイオードと、第1のトランジスタと、第2のトランジスタと、を有し、
前記フォトダイオードは、光の強度に応じた電気信号を生成する機能を有し、
前記第1のトランジスタは、ゲートに電荷を蓄積する機能と、蓄積された電荷を出力信号に変換する機能と、を有し、
前記第2のトランジスタは、前記フォトダイオードから生成された電気信号を前記第1のトランジスタのゲートに転送する機能と、前記第1のトランジスタのゲートに蓄積された電荷を保持する機能と、を有し、
前記第1のトランジスタは、バックゲートを有し、
前記第2のトランジスタは、酸化物半導体層により形成されたチャネル形成領域を有することを特徴とする半導体装置。 - フォトダイオードと、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、を有し、
前記フォトダイオードは、光の強度に応じた電気信号を生成する機能を有し、
前記第1のトランジスタは、ゲートに電荷を蓄積する機能と、蓄積された電荷を出力信号に変換する機能と、を有し、
前記第2のトランジスタは、前記フォトダイオードから生成された電気信号を前記第1のトランジスタのゲートに転送する機能と、前記第1のトランジスタのゲートに蓄積された電荷を保持する機能と、を有し、
前記第3のトランジスタは、前記出力信号の読み出しを制御する機能を有し、
前記第1のトランジスタは、バックゲートを有し、
前記第2のトランジスタは、酸化物半導体層により形成されたチャネル形成領域を有することを特徴とする半導体装置。 - 請求項1又は請求項2において、前記出力信号の読み出しは、前記第1のトランジスタのゲートに蓄積された電荷を保持した状態で、前記第1のトランジスタのバックゲートの電位を変更しながら複数回行われることを特徴とする半導体装置。
- 第1のトランジスタと、第2のトランジスタと、を有するフォトセンサを有し、
前記フォトセンサはリセット動作、前記第1のトランジスタのゲートに電荷を蓄積する累積動作、および読み出し動作を行う機能を有し、
前記累積動作は、前記第2のトランジスタにより制御され、
前記第1のトランジスタは、バックゲートを有し、
1回の撮像を行う期間において、前記バックゲートの電位を変更しながら前記読み出し動作が複数回行われ、
前記第2のトランジスタは、酸化物半導体層により形成されたチャネル形成領域を有することを特徴とする半導体装置。 - 請求項4において、前記フォトセンサを複数有し、
前記複数のフォトセンサは、前記リセット動作を共通して行い、前記累積動作を共通して行い、前記読み出し動作を順次行う機能を有することを特徴とする半導体装置。 - フォトダイオードから生成された電気信号を第1のトランジスタのゲートに転送し、
第2のトランジスタを非導通状態として前記第1のトランジスタのゲートに蓄積された電荷を保持し、
前記第1のトランジスタのバックゲートの電位を第1の電位に設定し、前記第1のトランジスタのゲートに蓄積され保持された前記電荷を第1の出力信号に変換し、前記第1の出力信号を読み出し、
前記第1のトランジスタのバックゲートの電位を第2の電位に設定し、前記第1のトランジスタのゲートに蓄積され保持された前記電荷を第2の出力信号に変換し、前記第2の出力信号を読み出すことを特徴とする半導体装置の駆動方法。 - 請求項6において、前記第2のトランジスタは、酸化物半導体層により形成されたチャネル形成領域を有することを特徴とする半導体装置の駆動方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011025070A JP5667464B2 (ja) | 2010-02-12 | 2011-02-08 | 半導体装置およびその駆動方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010028762 | 2010-02-12 | ||
JP2010028762 | 2010-02-12 | ||
JP2011025070A JP5667464B2 (ja) | 2010-02-12 | 2011-02-08 | 半導体装置およびその駆動方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014251750A Division JP5825748B2 (ja) | 2010-02-12 | 2014-12-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011187944A true JP2011187944A (ja) | 2011-09-22 |
JP5667464B2 JP5667464B2 (ja) | 2015-02-12 |
Family
ID=44367622
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011025070A Active JP5667464B2 (ja) | 2010-02-12 | 2011-02-08 | 半導体装置およびその駆動方法 |
JP2014251750A Active JP5825748B2 (ja) | 2010-02-12 | 2014-12-12 | 半導体装置 |
JP2015201638A Active JP6002828B2 (ja) | 2010-02-12 | 2015-10-12 | 半導体装置 |
JP2016172433A Expired - Fee Related JP6215420B2 (ja) | 2010-02-12 | 2016-09-05 | 半導体装置 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014251750A Active JP5825748B2 (ja) | 2010-02-12 | 2014-12-12 | 半導体装置 |
JP2015201638A Active JP6002828B2 (ja) | 2010-02-12 | 2015-10-12 | 半導体装置 |
JP2016172433A Expired - Fee Related JP6215420B2 (ja) | 2010-02-12 | 2016-09-05 | 半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (4) | US8586905B2 (ja) |
JP (4) | JP5667464B2 (ja) |
KR (1) | KR101924318B1 (ja) |
CN (2) | CN102754209B (ja) |
TW (2) | TWI621251B (ja) |
WO (1) | WO2011099336A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013175160A (ja) * | 2011-12-26 | 2013-09-05 | Semiconductor Energy Lab Co Ltd | 動作認識装置 |
JP2016197722A (ja) * | 2015-04-03 | 2016-11-24 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
WO2020241165A1 (ja) * | 2019-05-24 | 2020-12-03 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置、並びに、無機酸化物半導体材料 |
JP2022010017A (ja) * | 2013-06-05 | 2022-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2023054230A1 (ja) * | 2021-09-29 | 2023-04-06 | 株式会社 Rosnes | 撮像装置 |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011099343A1 (en) | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8803063B2 (en) | 2010-02-19 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Photodetector circuit |
KR101773992B1 (ko) | 2010-03-12 | 2017-09-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102334169B1 (ko) | 2010-08-27 | 2021-12-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치, 반도체 장치 |
JP2012256020A (ja) * | 2010-12-15 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその駆動方法 |
JP5560227B2 (ja) * | 2011-04-11 | 2014-07-23 | 株式会社ジャパンディスプレイ | 液晶表示装置の製造方法及び液晶表示装置 |
US8836626B2 (en) | 2011-07-15 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
JP6151530B2 (ja) | 2012-02-29 | 2017-06-21 | 株式会社半導体エネルギー研究所 | イメージセンサ、カメラ、及び監視システム |
CN104160295B (zh) * | 2012-03-09 | 2017-09-15 | 株式会社半导体能源研究所 | 半导体装置的驱动方法 |
US9236408B2 (en) | 2012-04-25 | 2016-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device including photodiode |
DE102013110695A1 (de) | 2012-10-02 | 2014-04-03 | Samsung Electronics Co., Ltd. | Bildsensor, Verfahren zum Betreiben desselben und Bildverarbeitungssystem mit demselben |
US20150295058A1 (en) * | 2012-12-28 | 2015-10-15 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Thin-film transistor and manufacturing method therefor |
US20140263952A1 (en) * | 2013-03-14 | 2014-09-18 | Perkinelmer Holdings, Inc. | High performance digital imaging system |
KR102226985B1 (ko) | 2013-08-19 | 2021-03-11 | 이데미쓰 고산 가부시키가이샤 | 산화물 반도체 기판 및 쇼트키 배리어 다이오드 |
US20160013243A1 (en) * | 2014-03-10 | 2016-01-14 | Dpix, Llc | Photosensor arrays for detection of radiation and process for the preparation thereof |
JP6612056B2 (ja) | 2014-05-16 | 2019-11-27 | 株式会社半導体エネルギー研究所 | 撮像装置、及び監視装置 |
US9881954B2 (en) | 2014-06-11 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
TWI700823B (zh) * | 2014-06-27 | 2020-08-01 | 日商半導體能源研究所股份有限公司 | 攝像裝置及電子裝置 |
KR102422059B1 (ko) | 2014-07-18 | 2022-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 촬상 장치, 및 전자 기기 |
JP6552336B2 (ja) | 2014-08-29 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2016092413A (ja) | 2014-10-29 | 2016-05-23 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
US9529079B1 (en) * | 2015-03-26 | 2016-12-27 | Google Inc. | Multiplexed multichannel photodetector |
JP6777421B2 (ja) | 2015-05-04 | 2020-10-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI738569B (zh) | 2015-07-07 | 2021-09-01 | 日商半導體能源研究所股份有限公司 | 成像裝置及其運作方法 |
US10163948B2 (en) | 2015-07-23 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
US9786856B2 (en) | 2015-08-20 | 2017-10-10 | Dpix, Llc | Method of manufacturing an image sensor device |
US10090344B2 (en) | 2015-09-07 | 2018-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device, method for operating the same, module, and electronic device |
US10896923B2 (en) * | 2015-09-18 | 2021-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of operating an imaging device with global shutter system |
US10109667B2 (en) | 2015-10-09 | 2018-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device, module, and electronic device |
JP6796461B2 (ja) | 2015-11-18 | 2020-12-09 | 株式会社半導体エネルギー研究所 | 半導体装置、コンピュータ及び電子機器 |
US10014325B2 (en) * | 2016-03-10 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
CN108780620A (zh) * | 2016-03-15 | 2018-11-09 | 夏普株式会社 | 有源矩阵基板 |
SG10201701689UA (en) | 2016-03-18 | 2017-10-30 | Semiconductor Energy Lab | Semiconductor device, semiconductor wafer, and electronic device |
US10242617B2 (en) * | 2016-06-03 | 2019-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, electronic device, and driving method |
US10403204B2 (en) * | 2016-07-12 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, electronic device, and method for driving display device |
US9929215B2 (en) | 2016-07-12 | 2018-03-27 | Dpix, Llc | Method of optimizing an interface for processing of an organic semiconductor |
KR20180055701A (ko) | 2016-11-17 | 2018-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
CN107687893B (zh) * | 2017-09-25 | 2020-11-06 | 南京科兴新材料科技有限公司 | 一种阵列传感器 |
CN110926508B (zh) * | 2019-11-28 | 2021-11-19 | 北京大学深圳研究生院 | 一种主动驱动式光电传感器、前端电路及驱动方法 |
KR20220117921A (ko) | 2019-12-24 | 2022-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
CN112532899B (zh) * | 2020-11-27 | 2023-06-30 | 京东方科技集团股份有限公司 | 光电转换电路、驱动方法、光电检测基板、光电检测装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11195778A (ja) * | 1997-10-30 | 1999-07-21 | Ino Vision Kk | 固体撮像素子及び固体撮像素子による光信号検出方法 |
JP2006050544A (ja) * | 2004-07-05 | 2006-02-16 | Konica Minolta Holdings Inc | 固体撮像装置及びこれを備えたカメラ |
JP2008283593A (ja) * | 2007-05-14 | 2008-11-20 | Konica Minolta Holdings Inc | 固体撮像装置 |
JP2009206508A (ja) * | 2008-01-31 | 2009-09-10 | Canon Inc | 薄膜トランジスタ及び表示装置 |
JP2009535819A (ja) * | 2006-08-31 | 2009-10-01 | マイクロン テクノロジー, インク. | 高性能画像センサのための透明チャネル薄膜トランジスタベースのピクセル |
JP2010074138A (ja) * | 2008-08-19 | 2010-04-02 | Fujifilm Corp | 薄膜トランジスタ、アクティブマトリクス基板、及び撮像装置 |
Family Cites Families (149)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
DE69414272T2 (de) | 1994-02-11 | 1999-03-25 | 1294339 Ontario Inc | Bildaufnahmevorrichtung für elektromagnetische strahlung mit dünnfilmtransistoren |
JP3525500B2 (ja) * | 1994-07-26 | 2004-05-10 | ミノルタ株式会社 | 固体撮像装置 |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
US6051857A (en) | 1998-01-07 | 2000-04-18 | Innovision, Inc. | Solid-state imaging device and method of detecting optical signals using the same |
JP2001051292A (ja) | 1998-06-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体表示装置 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4112184B2 (ja) | 2000-01-31 | 2008-07-02 | 株式会社半導体エネルギー研究所 | エリアセンサ及び表示装置 |
US6747638B2 (en) | 2000-01-31 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |
JP2001326343A (ja) | 2000-05-16 | 2001-11-22 | Minolta Co Ltd | 固体撮像装置 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP4302346B2 (ja) * | 2000-12-14 | 2009-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
US6724012B2 (en) | 2000-12-14 | 2004-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Display matrix with pixels having sensor and light emitting portions |
JP3899236B2 (ja) | 2001-02-16 | 2007-03-28 | シャープ株式会社 | イメージセンサの製造方法 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
US6794682B2 (en) | 2001-04-04 | 2004-09-21 | Canon Kabushiki Kaisha | Semiconductor device, method for manufacturing the same, and radiation detector |
JP2002368229A (ja) * | 2001-04-04 | 2002-12-20 | Canon Inc | 半導体装置、及びその製造方法、並びに放射線検出装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP2004165911A (ja) * | 2002-11-12 | 2004-06-10 | Canon Inc | トランジスタの駆動方法 |
US6995053B2 (en) * | 2004-04-23 | 2006-02-07 | Sharp Laboratories Of America, Inc. | Vertical thin film transistor |
JP4266656B2 (ja) | 2003-02-14 | 2009-05-20 | キヤノン株式会社 | 固体撮像装置及び放射線撮像装置 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7115923B2 (en) * | 2003-08-22 | 2006-10-03 | Micron Technology, Inc. | Imaging with gate controlled charge storage |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
CN1678037A (zh) * | 2004-04-02 | 2005-10-05 | 安捷伦科技有限公司 | 有源像素传感器电路 |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
EP1810335B1 (en) | 2004-11-10 | 2020-05-27 | Canon Kabushiki Kaisha | Light-emitting device |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
CA2708335A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
AU2005302964B2 (en) | 2004-11-10 | 2010-11-04 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI412138B (zh) | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
FR2888989B1 (fr) | 2005-07-21 | 2008-06-06 | St Microelectronics Sa | Capteur d'images |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101112652B1 (ko) | 2005-11-15 | 2012-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US20070152133A1 (en) * | 2005-12-30 | 2007-07-05 | Motorola, Inc. | Image sensor array with ferroelectric elements and method therefor |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
US20080158217A1 (en) | 2006-12-28 | 2008-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
TWI341406B (en) * | 2007-07-23 | 2011-05-01 | Au Optronics Corp | Diaply panel and its application |
US20100027355A1 (en) * | 2007-07-31 | 2010-02-04 | Dao Thuy B | Planar double gate transistor storage cell |
JP2009055190A (ja) * | 2007-08-24 | 2009-03-12 | Nec Electronics Corp | 可変利得回路 |
KR20090040158A (ko) | 2007-10-19 | 2009-04-23 | 삼성전자주식회사 | 투명한 트랜지스터를 구비한 시모스 이미지 센서 |
EP2071441A1 (en) * | 2007-12-03 | 2009-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Mobile phone |
JP5213422B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP2009169400A (ja) * | 2007-12-18 | 2009-07-30 | Sony Corp | 表示装置および電子機器 |
JP5264197B2 (ja) | 2008-01-23 | 2013-08-14 | キヤノン株式会社 | 薄膜トランジスタ |
JP5121478B2 (ja) * | 2008-01-31 | 2013-01-16 | 株式会社ジャパンディスプレイウェスト | 光センサー素子、撮像装置、電子機器、およびメモリー素子 |
JP4555358B2 (ja) | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
KR100941850B1 (ko) | 2008-04-03 | 2010-02-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP4743269B2 (ja) | 2008-04-23 | 2011-08-10 | エプソンイメージングデバイス株式会社 | 固体撮像装置 |
KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
KR101488927B1 (ko) | 2008-07-14 | 2015-02-09 | 삼성디스플레이 주식회사 | 표시기판 |
US9000441B2 (en) | 2008-08-05 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
JP5345456B2 (ja) | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5100670B2 (ja) | 2009-01-21 | 2012-12-19 | 株式会社半導体エネルギー研究所 | タッチパネル、電子機器 |
JP5606682B2 (ja) | 2009-01-29 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法 |
JP4415062B1 (ja) | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
JP4571221B1 (ja) | 2009-06-22 | 2010-10-27 | 富士フイルム株式会社 | Igzo系酸化物材料及びigzo系酸化物材料の製造方法 |
KR101768786B1 (ko) * | 2009-07-18 | 2017-08-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
US8624875B2 (en) | 2009-08-24 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving touch panel |
KR101333783B1 (ko) * | 2009-11-10 | 2013-11-29 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP2011138934A (ja) | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
KR102471810B1 (ko) | 2010-01-15 | 2022-11-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 구동하는 방법 |
JP2011187506A (ja) | 2010-03-04 | 2011-09-22 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
US8471310B2 (en) * | 2011-01-11 | 2013-06-25 | Aptina Imaging Corporation | Image sensor pixels with back-gate-modulated vertical transistor |
JP2012160679A (ja) | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
-
2011
- 2011-01-12 CN CN201180009189.5A patent/CN102754209B/zh active Active
- 2011-01-12 KR KR1020127023605A patent/KR101924318B1/ko active IP Right Grant
- 2011-01-12 CN CN201510627465.4A patent/CN105336744B/zh not_active Expired - Fee Related
- 2011-01-12 WO PCT/JP2011/050793 patent/WO2011099336A1/en active Application Filing
- 2011-02-04 US US13/021,144 patent/US8586905B2/en active Active
- 2011-02-08 JP JP2011025070A patent/JP5667464B2/ja active Active
- 2011-02-08 TW TW105124613A patent/TWI621251B/zh not_active IP Right Cessation
- 2011-02-08 TW TW100104107A patent/TWI556416B/zh not_active IP Right Cessation
-
2013
- 2013-09-26 US US14/037,751 patent/US9024248B2/en active Active
-
2014
- 2014-12-12 JP JP2014251750A patent/JP5825748B2/ja active Active
-
2015
- 2015-04-28 US US14/697,662 patent/US10535689B2/en not_active Expired - Fee Related
- 2015-10-12 JP JP2015201638A patent/JP6002828B2/ja active Active
-
2016
- 2016-09-05 JP JP2016172433A patent/JP6215420B2/ja not_active Expired - Fee Related
-
2020
- 2020-01-09 US US16/738,350 patent/US10916573B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11195778A (ja) * | 1997-10-30 | 1999-07-21 | Ino Vision Kk | 固体撮像素子及び固体撮像素子による光信号検出方法 |
JP2006050544A (ja) * | 2004-07-05 | 2006-02-16 | Konica Minolta Holdings Inc | 固体撮像装置及びこれを備えたカメラ |
JP2009535819A (ja) * | 2006-08-31 | 2009-10-01 | マイクロン テクノロジー, インク. | 高性能画像センサのための透明チャネル薄膜トランジスタベースのピクセル |
JP2008283593A (ja) * | 2007-05-14 | 2008-11-20 | Konica Minolta Holdings Inc | 固体撮像装置 |
JP2009206508A (ja) * | 2008-01-31 | 2009-09-10 | Canon Inc | 薄膜トランジスタ及び表示装置 |
JP2010074138A (ja) * | 2008-08-19 | 2010-04-02 | Fujifilm Corp | 薄膜トランジスタ、アクティブマトリクス基板、及び撮像装置 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013175160A (ja) * | 2011-12-26 | 2013-09-05 | Semiconductor Energy Lab Co Ltd | 動作認識装置 |
JP2022010017A (ja) * | 2013-06-05 | 2022-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7329575B2 (ja) | 2013-06-05 | 2023-08-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2016197722A (ja) * | 2015-04-03 | 2016-11-24 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
JP2021036614A (ja) * | 2015-04-03 | 2021-03-04 | 株式会社半導体エネルギー研究所 | 撮像装置 |
JP7019784B2 (ja) | 2015-04-03 | 2022-02-15 | 株式会社半導体エネルギー研究所 | 撮像装置 |
WO2020241165A1 (ja) * | 2019-05-24 | 2020-12-03 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置、並びに、無機酸化物半導体材料 |
WO2023054230A1 (ja) * | 2021-09-29 | 2023-04-06 | 株式会社 Rosnes | 撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201227935A (en) | 2012-07-01 |
KR101924318B1 (ko) | 2018-12-03 |
TWI621251B (zh) | 2018-04-11 |
US20140027768A1 (en) | 2014-01-30 |
US10535689B2 (en) | 2020-01-14 |
US9024248B2 (en) | 2015-05-05 |
JP5825748B2 (ja) | 2015-12-02 |
US10916573B2 (en) | 2021-02-09 |
CN102754209A (zh) | 2012-10-24 |
TWI556416B (zh) | 2016-11-01 |
WO2011099336A1 (en) | 2011-08-18 |
CN105336744A (zh) | 2016-02-17 |
JP2016015520A (ja) | 2016-01-28 |
JP6002828B2 (ja) | 2016-10-05 |
US20200152680A1 (en) | 2020-05-14 |
JP2015092596A (ja) | 2015-05-14 |
JP6215420B2 (ja) | 2017-10-18 |
CN102754209B (zh) | 2015-11-25 |
US20110198483A1 (en) | 2011-08-18 |
US8586905B2 (en) | 2013-11-19 |
US20150236061A1 (en) | 2015-08-20 |
JP2017028297A (ja) | 2017-02-02 |
CN105336744B (zh) | 2018-12-21 |
TW201640659A (zh) | 2016-11-16 |
KR20130025367A (ko) | 2013-03-11 |
JP5667464B2 (ja) | 2015-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6215420B2 (ja) | 半導体装置 | |
JP6718543B2 (ja) | 半導体装置 | |
JP6289592B2 (ja) | 半導体装置 | |
JP6313393B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140129 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141023 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141202 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141212 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5667464 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |