JP5560227B2 - 液晶表示装置の製造方法及び液晶表示装置 - Google Patents
液晶表示装置の製造方法及び液晶表示装置 Download PDFInfo
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 67
- 238000005530 etching Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 47
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000010408 film Substances 0.000 description 108
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910015202 MoCr Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
上記工程により製造されたTFT基板は、従来のIPS方式の構造に比し、ドレイン電極と画素電極との間の絶縁膜の形成工程や加工工程が省略され、低コスト化を図れることが分かった。
しかしながら、更なる検討を進めた結果、上記プロセスで製造したTFT基板を備えた液晶表示装置において点灯異常の発生することが判明した。
また、基板上の第1領域に画素領域が設けられた液晶表示装置において、前記画素領域には、ゲート電極と、前記ゲート電極上に設けられたゲート絶縁膜と、ゲート電極上部の前記ゲート絶縁膜上に設けられた半導体層と、前記半導体層と離間して配置された画素電極と、前記半導体層と前記画素電極上に配置され前記半導体層と前記画素電極とを電気的に接続するドレイン電極と、前記画素電極の上部に配置された共通電極とが設けられ、前記基板上の第2領域には、前記画素電極と同時に形成された同一材料からなる電極が設けられていることを特徴とする液晶表示装置とする。
以下に本発明について実施例を用いて詳細に説明する。
Claims (9)
- 基板上の画素領域内に設けられる第1領域に第1半導体層を、前記画素領域の外側に設けられる第2領域に第2半導体層を形成する工程と、
前記第1領域に前記第1半導体層と離間してITOからなる画素電極を、前記第2領域に前記第2半導体層と離間して前記画素電極と同層のITOからなる電極を形成する工程と、
前記第1領域の前記第1半導体層と前記画素電極とを電気的に接続するドレイン電極を形成すると共に、前記第1半導体層の一部及び前記第2半導体層を露出させる工程と、
前記第2半導体層をエッチング量の指標として用いて前記露出された第1半導体層の一部をエッチングする工程とを有することを特徴とする液晶表示装置の製造方法。 - 請求項1記載の液晶表示装置の製造方法において、
前記第1半導体層と前記ドレイン電極と前記画素電極の上に絶縁膜を形成する工程と、
前記絶縁膜上に共通電極を形成する工程と、を有することを特徴とする液晶表示装置の製造方法。 - 請求項1又は2に記載の液晶表示装置の製造方法において、
前記第1及び前記第2半導体層は、非晶質シリコン層であることを特徴とする液晶表示装置の製造方法。 - 請求項1乃至3の何れかに記載の液晶表示装置の製造方法において、
前記第2領域は、当該液晶表示装置の中に形成されていることを特徴とする液晶表示装置の製造方法。 - 請求項1乃至4の何れかに記載の液晶表示装置の製造方法において、
前記第2領域に形成される前記画素電極と同層のITOからなる電極の面積や位置は、前記第1半導体層をエッチングする工程において前記第1半導体層と前記第2半導体層のエッチング量が同等となるように決定されることを特徴とする液晶表示装置の製造方法。 - 請求項1乃至5の何れかに記載の液晶表示装置の製造方法において、
前記ドレイン電極は、Mo膜或いは、Mo膜やAl含有Mo膜でAl膜を挟んだ多層膜であることを特徴とする液晶表示装置の製造方法。 - 請求項1乃至6の何れかに記載の液晶表示装置の製造方法において、
前記第2領域には、前記画素領域の外側に設けられる配線領域も含まれることを特徴とする液晶表示装置の製造方法。 - 基板上に画素領域と配線領域とが設けられた液晶表示装置において、
前記画素領域には、ゲート電極と、前記ゲート電極上に設けられたゲート絶縁膜と、前記ゲート絶縁膜上に設けられた半導体層およびITOからなる画素電極と、前記半導体層と前記画素電極との上に配置され前記半導体層と前記画素電極とを電気的に接続するドレイン電極と、前記画素電極の上部に配置された絶縁膜と共通電極とが設けられ、
前記基板上の前記画素領域の外側の領域には、前記画素電極と同層の前記ITOからなる電極が設けられていることを特徴とする液晶表示装置。 - 請求項8記載の液晶表示装置において、
前記ゲート絶縁膜は窒化シリコン膜、前記半導体層は非晶質シリコン層であることを特徴とする液晶表示装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2011087388A JP5560227B2 (ja) | 2011-04-11 | 2011-04-11 | 液晶表示装置の製造方法及び液晶表示装置 |
US13/433,394 US20120257133A1 (en) | 2011-04-11 | 2012-03-29 | Manufacturing method of liquid crystal display device and liquid crystal display device |
KR1020120036831A KR101346892B1 (ko) | 2011-04-11 | 2012-04-09 | 액정 표시 장치의 제조 방법 및 액정 표시 장치 |
TW101112539A TWI462190B (zh) | 2011-04-11 | 2012-04-10 | Liquid crystal display device |
CN201210108792.5A CN102736298B (zh) | 2011-04-11 | 2012-04-10 | 液晶显示装置的制造方法和液晶显示装置 |
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JP2011087388A JP5560227B2 (ja) | 2011-04-11 | 2011-04-11 | 液晶表示装置の製造方法及び液晶表示装置 |
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JP2012220771A JP2012220771A (ja) | 2012-11-12 |
JP5560227B2 true JP5560227B2 (ja) | 2014-07-23 |
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US (1) | US20120257133A1 (ja) |
JP (1) | JP5560227B2 (ja) |
KR (1) | KR101346892B1 (ja) |
CN (1) | CN102736298B (ja) |
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KR102232755B1 (ko) * | 2015-04-07 | 2021-03-26 | 삼성전자주식회사 | 2차원 물질을 이용한 전자소자 및 그 제조 방법 |
CN105607308B (zh) * | 2015-12-24 | 2019-01-04 | 南京中电熊猫液晶显示科技有限公司 | 一种测量标尺、以及制造方法和使用方法 |
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JPH07253595A (ja) * | 1994-03-16 | 1995-10-03 | Hitachi Ltd | 液晶表示装置 |
JPH08190087A (ja) * | 1995-01-09 | 1996-07-23 | Hitachi Ltd | 液晶表示パネル作製用透明絶縁基板およびその各種特性検査方法 |
JP3767154B2 (ja) * | 1997-06-17 | 2006-04-19 | セイコーエプソン株式会社 | 電気光学装置用基板、電気光学装置、電子機器及び投写型表示装置 |
JP3395739B2 (ja) * | 1999-11-16 | 2003-04-14 | 日本電気株式会社 | 薄膜トランジスタアレイ基板及びその製造方法 |
TW527513B (en) * | 2000-03-06 | 2003-04-11 | Hitachi Ltd | Liquid crystal display device and manufacturing method thereof |
JP4051190B2 (ja) * | 2000-10-31 | 2008-02-20 | シャープ株式会社 | 表示装置の製造方法、表示装置用基板および測定システム |
KR100475112B1 (ko) * | 2001-12-29 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
KR100916607B1 (ko) * | 2003-09-30 | 2009-09-14 | 엘지디스플레이 주식회사 | 테스트 패턴을 포함한 대면적 기판 제조방법과, 테스트패턴을 이용한 식각불량 판별방법 |
JP4627148B2 (ja) * | 2004-04-09 | 2011-02-09 | 株式会社 日立ディスプレイズ | 表示装置 |
KR20060082096A (ko) * | 2005-01-11 | 2006-07-14 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
KR20070018456A (ko) * | 2005-08-10 | 2007-02-14 | 삼성전자주식회사 | 표시장치용 기판, 그 제조방법, 그 검사방법 및 이를 갖는액정표시장치 |
KR101316635B1 (ko) * | 2006-07-27 | 2013-10-15 | 삼성디스플레이 주식회사 | 표시 기판의 제조 방법, 표시 기판 및 마스크 |
KR20080062881A (ko) * | 2006-12-29 | 2008-07-03 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 검사방법 |
US20100253656A1 (en) * | 2008-01-09 | 2010-10-07 | Yohsuke Fujikawa | Display device |
JP5456980B2 (ja) * | 2008-02-15 | 2014-04-02 | 三菱電機株式会社 | 液晶表示装置、及びその製造方法 |
US8493543B2 (en) * | 2008-10-17 | 2013-07-23 | Sony Corporation | Liquid crystal display device |
KR100980257B1 (ko) * | 2008-12-05 | 2010-09-07 | 케이맥(주) | 액정표시소자용 박막 트랜지스터 패턴 깊이 측정장치 및 측정방법 |
JP2010175585A (ja) * | 2009-01-27 | 2010-08-12 | Epson Imaging Devices Corp | 電気光学装置の製造方法及び電気光学装置 |
KR102153841B1 (ko) * | 2009-07-31 | 2020-09-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
CN105336744B (zh) * | 2010-02-12 | 2018-12-21 | 株式会社半导体能源研究所 | 半导体装置及其驱动方法 |
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- 2011-04-11 JP JP2011087388A patent/JP5560227B2/ja active Active
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2012
- 2012-03-29 US US13/433,394 patent/US20120257133A1/en not_active Abandoned
- 2012-04-09 KR KR1020120036831A patent/KR101346892B1/ko active IP Right Grant
- 2012-04-10 CN CN201210108792.5A patent/CN102736298B/zh active Active
- 2012-04-10 TW TW101112539A patent/TWI462190B/zh active
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Publication number | Publication date |
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JP2012220771A (ja) | 2012-11-12 |
US20120257133A1 (en) | 2012-10-11 |
CN102736298A (zh) | 2012-10-17 |
KR101346892B1 (ko) | 2014-01-02 |
KR20120115950A (ko) | 2012-10-19 |
CN102736298B (zh) | 2015-09-09 |
TWI462190B (zh) | 2014-11-21 |
TW201248739A (en) | 2012-12-01 |
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