JP6317059B2 - 半導体装置及び表示装置 - Google Patents
半導体装置及び表示装置 Download PDFInfo
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- JP6317059B2 JP6317059B2 JP2012252106A JP2012252106A JP6317059B2 JP 6317059 B2 JP6317059 B2 JP 6317059B2 JP 2012252106 A JP2012252106 A JP 2012252106A JP 2012252106 A JP2012252106 A JP 2012252106A JP 6317059 B2 JP6317059 B2 JP 6317059B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
Description
また、上記の本発明の一態様において、前記第1の絶縁膜は酸化物絶縁膜であるとよい。
本実施の形態では、半導体装置の一形態を、図1及び図2を用いて説明する。
本実施の形態においては、先の実施の形態1に示す半導体装置と異なる態様について、図3を用いて、以下説明を行う。なお、実施の形態1で示すトランジスタと、同一部分または同様の機能を有する部分には同一の符号を用い、その繰り返しの説明は省略する。
104 画素部
106 ゲートドライバ回路部
108 ソースドライバ回路部
110 第2の基板
112 シール材
113 FPC端子部
114 FPC
115 電極
116 ゲート電極
117 ゲート絶縁膜
118 半導体層
120 ソース電極
122 ドレイン電極
124 第1の絶縁膜
126 第2の絶縁膜
128 第1の導電膜
129 第1の導電膜
130 画素電極
134 液晶層
136 スペーサ
138 第3の絶縁膜
139 第3の絶縁膜
140 第3の絶縁膜
148 第2の導電膜
149 第2の導電膜
150 共通電極
250 第1のトランジスタ
252 第2のトランジスタ
254 容量素子
256 液晶素子
350 トランジスタ
450 トランジスタ
Claims (11)
- 駆動回路部を有する半導体装置において、
前記駆動回路部は、
ゲート電極と、
前記ゲート電極上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成された半導体層と、
前記半導体層上に形成されたソース電極及びドレイン電極と、を含むトランジスタと、
前記トランジスタ上に無機材料で形成された第1の絶縁膜と、
前記第1の絶縁膜上に有機材料で形成された第2の絶縁膜と、
前記第2の絶縁膜上に形成され、且つ前記半導体層と重畳する領域に形成された第1の導電膜と、
前記第1の導電膜上に無機材料で形成された第3の絶縁膜と、
前記第3の絶縁膜上に形成され、且つ前記第1の導電膜と重畳する領域に形成された第2の導電膜と、を有し、
前記第1の導電膜に与えられる第1の電位の絶対値が、前記第2の導電膜に与えられる第2の電位の絶対値よりも大きい
ことを特徴とする半導体装置。 - 請求項1において、
前記半導体装置は、前記駆動回路部によって信号が供給される画素部を有し、
前記画素部は画素電極を有し、
前記画素電極は、前記第1の導電膜と電気的に接続されていることを特徴とする半導体装置。 - 画素部と、前記画素部に信号を供給する駆動回路部とを有する半導体装置において、
前記画素部及び前記駆動回路部それぞれは、
ゲート電極と、
前記ゲート電極上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成された半導体層と、
前記半導体層上に形成されたソース電極及びドレイン電極と、を含むトランジスタと、
前記トランジスタ上に無機材料で形成された第1の絶縁膜と、
前記第1の絶縁膜上に有機材料で形成された第2の絶縁膜と、
前記第2の絶縁膜上に形成され、且つ前記半導体層と重畳する領域に形成された第1の導電膜と、
前記第1の導電膜上に無機材料で形成された第3の絶縁膜と、
前記第3の絶縁膜上に形成され、且つ前記第1の導電膜と重畳する領域に形成された第2の導電膜と、を有し、
前記第1の導電膜に与えられる第1の電位の絶対値が、前記第2の導電膜に与えられる第2の電位の絶対値よりも大きい
ことを特徴とする半導体装置。 - 請求項3において、
前記画素部は画素電極を有し、
前記画素電極は、前記第1の導電膜と電気的に接続されていることを特徴とする半導体装置。 - 請求項2乃至4のいずれか一項において、
前記画素部は共通電極を有し、
前記共通電極は、前記第2の導電膜と電気的に接続されていることを特徴とする半導体装置。 - 請求項1乃至5のいずれか一項において、
前記第2の導電膜上に液晶層が形成されていることを特徴とする半導体装置。 - 請求項1乃至6のいずれか一項において、
前記半導体層が酸化物半導体層であることを特徴とする半導体装置。 - 請求項7において、
前記酸化物半導体層は、酸化インジウム、酸化スズ、及び酸化亜鉛の群から選択された少なくとも一つの酸化物を含む層であることを特徴とする半導体装置。 - 請求項7または8において、
前記酸化物半導体層はIn−Ga−Zn系酸化物半導体層であることを特徴とする半導体装置。 - 請求項7乃至9のいずれか一項において、
前記酸化物半導体層は、結晶部を含み、
前記結晶部は、c軸が前記酸化物半導体層の被形成面の法線ベクトルに平行な方向に揃うことを特徴とする半導体装置。 - 請求項1乃至10のいずれか一項に記載の半導体装置を有することを特徴とする表示装置。
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