JP6613116B2 - 半導体装置、及び半導体装置の作製方法 - Google Patents
半導体装置、及び半導体装置の作製方法 Download PDFInfo
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- JP6613116B2 JP6613116B2 JP2015228423A JP2015228423A JP6613116B2 JP 6613116 B2 JP6613116 B2 JP 6613116B2 JP 2015228423 A JP2015228423 A JP 2015228423A JP 2015228423 A JP2015228423 A JP 2015228423A JP 6613116 B2 JP6613116 B2 JP 6613116B2
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- 239000004065 semiconductor Substances 0.000 title claims description 664
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000012212 insulator Substances 0.000 claims description 286
- 238000000034 method Methods 0.000 claims description 139
- 239000000758 substrate Substances 0.000 claims description 138
- 229910052731 fluorine Inorganic materials 0.000 claims description 95
- 239000011737 fluorine Substances 0.000 claims description 95
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 92
- 230000015572 biosynthetic process Effects 0.000 claims description 41
- 229910052738 indium Inorganic materials 0.000 claims description 24
- 239000011701 zinc Substances 0.000 claims description 24
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- 239000004020 conductor Substances 0.000 description 417
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 84
- 229910052760 oxygen Inorganic materials 0.000 description 84
- 239000001301 oxygen Substances 0.000 description 84
- 239000010410 layer Substances 0.000 description 72
- 239000013078 crystal Substances 0.000 description 62
- 239000003990 capacitor Substances 0.000 description 61
- 150000002500 ions Chemical class 0.000 description 53
- 230000006870 function Effects 0.000 description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 45
- 229910052710 silicon Inorganic materials 0.000 description 45
- 239000010703 silicon Substances 0.000 description 45
- 125000004429 atom Chemical group 0.000 description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 40
- 239000000523 sample Substances 0.000 description 39
- 239000012535 impurity Substances 0.000 description 32
- 239000004973 liquid crystal related substance Substances 0.000 description 32
- 238000005229 chemical vapour deposition Methods 0.000 description 31
- 229910052739 hydrogen Inorganic materials 0.000 description 31
- 239000001257 hydrogen Substances 0.000 description 30
- 238000003384 imaging method Methods 0.000 description 30
- 238000000231 atomic layer deposition Methods 0.000 description 29
- 230000002093 peripheral effect Effects 0.000 description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 25
- 239000008188 pellet Substances 0.000 description 24
- 238000004544 sputter deposition Methods 0.000 description 24
- 238000004549 pulsed laser deposition Methods 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- 229910052757 nitrogen Inorganic materials 0.000 description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 19
- 238000001451 molecular beam epitaxy Methods 0.000 description 19
- 230000007547 defect Effects 0.000 description 18
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 18
- 238000004458 analytical method Methods 0.000 description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 229910052719 titanium Inorganic materials 0.000 description 16
- 239000010936 titanium Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 15
- 239000010949 copper Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 15
- 229910052715 tantalum Inorganic materials 0.000 description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 14
- 230000001133 acceleration Effects 0.000 description 14
- 229910052796 boron Inorganic materials 0.000 description 14
- 239000007789 gas Substances 0.000 description 14
- 229910052718 tin Chemical group 0.000 description 14
- 229910052727 yttrium Inorganic materials 0.000 description 14
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 13
- 239000002356 single layer Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- 229910052726 zirconium Inorganic materials 0.000 description 12
- 229910052732 germanium Inorganic materials 0.000 description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 10
- 229910001195 gallium oxide Inorganic materials 0.000 description 10
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 10
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 10
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 9
- 238000002003 electron diffraction Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 125000004430 oxygen atom Chemical group O* 0.000 description 8
- 238000012916 structural analysis Methods 0.000 description 8
- 229910052779 Neodymium Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 7
- 229910052735 hafnium Inorganic materials 0.000 description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 7
- 229910052746 lanthanum Inorganic materials 0.000 description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000002159 nanocrystal Substances 0.000 description 7
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 229910021389 graphene Inorganic materials 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- 238000004435 EPR spectroscopy Methods 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910007541 Zn O Inorganic materials 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- -1 Fluorine ions Chemical class 0.000 description 3
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052696 pnictogen Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001362 electron spin resonance spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QKEOZZYXWAIQFO-UHFFFAOYSA-M mercury(1+);iodide Chemical compound [Hg]I QKEOZZYXWAIQFO-UHFFFAOYSA-M 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 1
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Description
本実施の形態では、本発明の一態様に係るトランジスタの一例について説明する。
図1に、本発明の一態様に係るトランジスタを示す。図1(A)は、トランジスタ100の上面図、図1(B)は、図1(A)における一点鎖線A1−A2および一点鎖線A3−A4に対応した断面図を示す。トランジスタ100は、基板400と、導電体413と、絶縁体402と、半導体406a、半導体406b、半導体406cと、導電体416aと、導電体416bと、絶縁体412と、導電体404と、を有する。
本実施の形態で示したように、半導体406bの上下に半導体406aおよび半導体406cを配置することで、トランジスタの電気特性を向上させることができる場合がある。
以下では、酸化物半導体の構造について説明する。
まず、CAAC−OSについて説明する。なお、CAAC−OSを、CANC(C−Axis Aligned nanocrystals)を有する酸化物半導体と呼ぶこともできる。
次に、微結晶酸化物半導体について説明する。
次に、非晶質酸化物半導体について説明する。
なお、酸化物半導体は、nc−OSと非晶質酸化物半導体との間の構造を有する場合がある。そのような構造を有する酸化物半導体を、特に非晶質ライク酸化物半導体(a−like OS:amorphous−like Oxide Semiconductor)と呼ぶ。
本実施の形態では、実施の形態1で示したトランジスタとは一部形状の異なるトランジスタの作製方法について説明する。
図15(A)、図16(A)、図17(A)、図18(A)、図19(A)、図20(A)および図21(A)は、トランジスタの作製方法を説明する上面図である。各上面図には、一点鎖線F1−F2および一点鎖線F3−F4が記され、それに対応した断面図を図15(B)、図16(B)、図17(B)、図18(B)、図19(B)、図20(B)および図21(B)に示す。
本実施の形態では、本発明の一態様に係るトランジスタなどを利用した半導体装置の回路の一例について説明する。
図24(A)に示す回路図は、pチャネル型のトランジスタ2200とnチャネル型のトランジスタ2100を直列に接続し、かつそれぞれのゲートを接続した、いわゆるCMOSインバータの構成を示している。nチャネル型のトランジスタ2100には、酸化物半導体を有するトランジスタを用いることが好ましい。それによって、CMOSインバータ回路における消費電力を低減させることができる。
また図24(B)に示す回路図は、トランジスタ2100とトランジスタ2200のそれぞれのソースとドレインを接続した構成を示している。このような構成とすることで、いわゆるCMOSアナログスイッチとして機能させることができる。nチャネル型のトランジスタ2100には、酸化物半導体を有するトランジスタを用いることが好ましい。
図25は、図24(A)に対応する半導体装置の断面図である。図25に示す半導体装置は、トランジスタ2200と、トランジスタ2100と、を有する。また、トランジスタ2100は、トランジスタ2200の上方に配置する。なお、トランジスタ2100として、図20に示したトランジスタを用いた例を示しているが、本発明の一態様に係る半導体装置は、これに限定されるものではない。例えば、図6、図7、図8、図22または図23などに示したトランジスタなどを、トランジスタ2100として用いても構わない。よって、トランジスタ2100については、適宜上述したトランジスタについての記載を参酌する。
本発明の一態様に係るトランジスタを用いた、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を図28に示す。
図28(B)に示す半導体装置は、トランジスタ3200を有さない点で図28(A)に示した半導体装置と異なる。この場合も図28(A)に示した半導体装置と同様の動作により情報の書き込みおよび保持動作が可能である。
図29は、図28(A)に対応する半導体装置の断面図である。図29に示す半導体装置は、トランジスタ3200と、トランジスタ3300と、容量素子3400と、を有する。また、トランジスタ3300および容量素子3400は、トランジスタ3200の上方に配置する。なお、トランジスタ3300としては、上述したトランジスタ2100についての記載を参照する。また、トランジスタ3200としては、図25に示したトランジスタ2200についての記載を参照する。なお、図25では、トランジスタ2200がpチャネル型トランジスタである場合について説明したが、トランジスタ3200がnチャネル型トランジスタであっても構わない。
以下では、本発明の一態様に係る撮像装置について説明する。
撮像装置200が有する1つの画素211を複数の副画素212で構成し、それぞれの副画素212に特定の波長帯域の光を透過するフィルタ(カラーフィルタ)を組み合わせることで、カラー画像表示を実現するための情報を取得することができる。
以下では、シリコンを用いたトランジスタと、酸化物半導体を用いたトランジスタと、を用いて画素を構成する一例について説明する。
以下では、上述したトランジスタや上述した記憶装置などの半導体装置を含むCPUについて説明する。
以下では、本発明の一態様に係る表示装置について、図39および図40を用いて説明する。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図41に示す。
200 撮像装置
201 スイッチ
202 スイッチ
203 スイッチ
210 画素部
211 画素
212 副画素
212B 副画素
212G 副画素
212R 副画素
220 光電変換素子
230 画素回路
231 配線
247 配線
248 配線
249 配線
250 配線
253 配線
254 フィルタ
254B フィルタ
254G フィルタ
254R フィルタ
255 レンズ
256 光
257 配線
260 周辺回路
270 周辺回路
280 周辺回路
290 周辺回路
291 光源
300 シリコン基板
310 層
320 層
330 層
340 層
351 トランジスタ
352 トランジスタ
353 トランジスタ
360 フォトダイオード
361 アノード
363 低抵抗領域
370 プラグ
371 配線
372 配線
373 配線
380 絶縁体
400 基板
401 絶縁体
402 絶縁体
404 導電体
406a 半導体
406b 半導体
406c 半導体
412 絶縁体
413 導電体
416a 導電体
416b 導電体
434 導電体
436c 半導体
442 絶縁体
450 半導体基板
452 絶縁体
454 導電体
456 領域
460 領域
462 絶縁体
464 絶縁体
466 絶縁体
468 絶縁体
472a 領域
472b 領域
474a 導電体
474b 導電体
474c 導電体
476a 導電体
476b 導電体
478a 導電体
478b 導電体
478c 導電体
480a 導電体
480b 導電体
480c 導電体
490 絶縁体
492 絶縁体
494 絶縁体
496a 導電体
496b 導電体
496c 導電体
496d 導電体
498a 導電体
498b 導電体
498c 導電体
498d 導電体
500 基板
502 絶縁体
503 絶縁体
504 導電体
506a 半導体
506b 半導体
506c 半導体
511 絶縁体
512 絶縁体
513 導電体
514 導電体
516 導電体
516a 導電体
516b 導電体
534 導電体
536a 半導体
536b 半導体
536c 半導体
542 絶縁体
700 基板
704a 導電体
704b 導電体
706a 半導体
706b 半導体
712a 絶縁体
712b 絶縁体
714a 導電体
714b 導電体
716a 導電体
716b 導電体
718a 絶縁体
718b 絶縁体
718c 絶縁体
719 発光素子
720 絶縁体
721 絶縁体
731 端子
732 FPC
733a 配線
734 シール材
735 駆動回路
736 駆動回路
737 画素
741 トランジスタ
742 容量素子
743 スイッチ素子
744 信号線
750 基板
751 トランジスタ
752 容量素子
753 液晶素子
754 走査線
755 信号線
781 導電体
782 発光層
783 導電体
784 隔壁
791 導電体
792 絶縁体
793 液晶層
794 絶縁体
795 スペーサ
796 導電体
797 基板
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
2100 トランジスタ
2200 トランジスタ
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
5100 ペレット
5120 基板
5161 領域
Claims (3)
- ゲート電極と、ゲート絶縁体を介して、前記ゲート電極と重なる領域を有する酸化物半導体と、を有し、
前記酸化物半導体のチャネル形成領域はフッ素を有し、
前記フッ素の濃度は、1×1020atoms/cm3以上1×1022atoms/cm3以下であり、
前記酸化物半導体において、前記チャネル形成領域のフッ素濃度より、前記チャネル形成領域以外の領域のフッ素濃度の方が低いことを特徴とする半導体装置。 - 請求項1において、
前記酸化物半導体は、インジウム、亜鉛およびガリウムを有することを特徴とする半導体装置。 - 基板上に酸化物半導体を形成し、
前記酸化物半導体と電気的に接続する、ソース電極およびドレイン電極を形成し、
前記酸化物半導体、前記ソース電極および前記ドレイン電極上に絶縁体を形成し、
前記絶縁体を介して前記酸化物半導体にフッ素を添加し、
前記絶縁体上にゲート電極を形成することを特徴とする半導体装置の作製方法。
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2015
- 2015-11-24 US US14/949,959 patent/US20160155849A1/en not_active Abandoned
- 2015-11-24 JP JP2015228423A patent/JP6613116B2/ja active Active
- 2015-12-02 KR KR1020150170374A patent/KR102436265B1/ko active IP Right Grant
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- 2021-01-20 JP JP2021007058A patent/JP7111851B2/ja active Active
- 2021-02-23 US US17/182,269 patent/US20210175362A1/en active Pending
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- 2022-07-21 JP JP2022116430A patent/JP7165838B2/ja active Active
- 2022-08-22 KR KR1020220104624A patent/KR102651755B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
JP7165838B2 (ja) | 2022-11-04 |
JP7111851B2 (ja) | 2022-08-02 |
US20160155849A1 (en) | 2016-06-02 |
JP2022186855A (ja) | 2022-12-15 |
KR20220124116A (ko) | 2022-09-13 |
JP2023171883A (ja) | 2023-12-05 |
KR20160066525A (ko) | 2016-06-10 |
US20240047583A1 (en) | 2024-02-08 |
JP6828119B2 (ja) | 2021-02-10 |
JP2020074394A (ja) | 2020-05-14 |
KR102651755B1 (ko) | 2024-03-29 |
JP2021082823A (ja) | 2021-05-27 |
KR102436265B1 (ko) | 2022-08-26 |
JP2016111351A (ja) | 2016-06-20 |
JP2022140547A (ja) | 2022-09-26 |
US20210175362A1 (en) | 2021-06-10 |
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