JP5117667B2 - 薄膜トランジスタパネル - Google Patents
薄膜トランジスタパネル Download PDFInfo
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- JP5117667B2 JP5117667B2 JP2005054403A JP2005054403A JP5117667B2 JP 5117667 B2 JP5117667 B2 JP 5117667B2 JP 2005054403 A JP2005054403 A JP 2005054403A JP 2005054403 A JP2005054403 A JP 2005054403A JP 5117667 B2 JP5117667 B2 JP 5117667B2
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- thin film
- film transistor
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- 239000010409 thin film Substances 0.000 title claims description 75
- 229910044991 metal oxide Inorganic materials 0.000 claims description 27
- 150000004706 metal oxides Chemical class 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 13
- 239000012780 transparent material Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 50
- 238000000034 method Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- UMJICYDOGPFMOB-UHFFFAOYSA-N zinc;cadmium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Cd+2] UMJICYDOGPFMOB-UHFFFAOYSA-N 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/131—Interconnections, e.g. wiring lines or terminals
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Description
図1はこの発明の第1実施形態としての液晶表示装置における薄膜トランジスタパネルの要部の平面図を示し、図2(A)は図1のIIA−IIA線に沿う断面図を示し、図2(B)は図1のIIB−IIB線に沿う断面図を示す。この薄膜トランジスタパネルはガラス基板1を備えている。
図3はこの発明の第2実施形態としての液晶表示装置における薄膜トランジスタパネルの要部の平面図を示し、図4(A)は図3のIVA−IVA線に沿う断面図を示し、図4(B)は図3のIVB−IVB線に沿う断面図を示す。この場合も、図3を明確にする目的で、画素電極4の縁部に斜めの短い実線のハッチングが記入されている。
図5(A)、(B)はこの発明の第3実施形態としての有機EL(エレクトロルミネッセンス)表示装置の要部の断面図を示す。この有機EL表示装置において、図2(A)、(B)に示す薄膜トランジスタパネルと同一の構成については、同一の参照符号を付してその説明を省略する。この有機EL表示装置においては、薄膜トランジスタ5上に有機ELからなる発光部を具備する。
図6(A)、(B)はこの発明の第4実施形態としての有機EL表示装置の要部の断面図を示す。この有機EL表示装置において、図5(A)、(B)に示す有機EL表示装置と異なる点は、オーバーコート膜17を省略し、チャネル保護膜14の上面の一方側、その外側における半導体薄膜13の上面およびゲート絶縁膜12の上面の所定の箇所にアノード電極21を例えばn型不純物を含む透明な上記金属酸化物によって形成し、このアノード電極21にソース電極を兼ねさせた点である。
例えば、図1および図2(A)、(B)では、例えばn型不純物を含む金属酸化物からなるゲート電極11およびドレイン電極16の各一端部を走査ライン2およびデータライン3の各上面に設けているが、これに限らず、例えば、走査ライン2およびデータライン3の各上面全体に例えばn型不純物を含む金属酸化物膜を設けるようにしてもよい。また、ゲート電極11およびドレイン電極16の各一端部上面に走査ライン2およびデータライン3を設けるようにしてもよい。この場合、走査ライン2およびデータライン3の各下面全体に例えばn型不純物を含む金属酸化物膜を設けるようにしてもよい。
2 走査ライン
3 データライン
4 画素電極
5 薄膜トランジスタ
11 ゲート電極
12 ゲート絶縁膜
13 半導体薄膜
14 チャネル保護膜
15 ソース電極
16 ドレイン電極
17 オーバーコート膜
21 アノード電極
22 有機EL層
23 カソード電極
Claims (8)
- 遮光性材料からなる走査ラインと、
前記走査ラインに対して交差するように配置されたデータラインと、
透明性材料からなる半導体薄膜を有し、前記半導体薄膜よりも下層側に設けられたゲート電極が前記走査ラインに電気的に接続されるとともに、ドレイン電極が前記データラインに電気的に接続された薄膜トランジスタと、
前記薄膜トランジスタのソース電極に電気的に接続されるとともに、前記ゲート電極の少なくとも一部を覆うように設けられた透明性材料からなる画素電極と、
を備え、
前記ゲート電極は、透明性材料からなるとともに、該ゲート電極として成膜された前記透明性材料の下面の一部が前記走査ラインに接触するように前記走査ライン上に設けられることによって前記走査ラインに電気的に接続されていることを特徴とする薄膜トランジスタパネル。 - 前記走査ラインは前記データラインよりも下層側に設けられていることを特徴とする請求項1に記載の薄膜トランジスタパネル。
- 前記走査ラインは、前記ドレイン電極及び前記ソース電極よりも下層側に設けられていることを特徴とする請求項2に記載の薄膜トランジスタパネル。
- 前記データラインは遮光性材料からなり、
前記ドレイン電極は、透明性材料からなり、該ドレイン電極として成膜された前記透明性材料の下面の一部が前記データラインに接触するように設けられることによって前記データラインに電気的に接続されていることを特徴とする請求項3に記載の薄膜トランジスタパネル。 - 前記半導体薄膜は金属酸化物からなることを特徴とする請求項1から4の何れかに記載の薄膜トランジスタパネル。
- 前記ドレイン電極は金属酸化物に不純物を含んだ材料からなることを特徴とする請求項1から5の何れかに記載の薄膜トランジスタパネル。
- 前記ゲート電極は金属酸化物に不純物を含んだ材料からなることを特徴とする請求項1から6の何れかに記載の薄膜トランジスタパネル。
- 前記画素電極は、前記薄膜トランジスタにおける前記半導体薄膜の少なくとも一部を覆うように設けられていることを特徴とする請求項1から7の何れかに記載の薄膜トランジスタパネル。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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JP2005054403A JP5117667B2 (ja) | 2005-02-28 | 2005-02-28 | 薄膜トランジスタパネル |
US11/356,407 US7795621B2 (en) | 2005-02-28 | 2006-02-16 | Thin film transistor panel |
CN2006800001756A CN1943039B (zh) | 2005-02-28 | 2006-02-17 | 薄膜晶体管面板 |
PCT/JP2006/303348 WO2006093028A1 (en) | 2005-02-28 | 2006-02-17 | Thin film transistor panel |
KR1020067022044A KR100869884B1 (ko) | 2005-02-28 | 2006-02-17 | 박막트랜지스터 패널 |
EP20060714488 EP1854145A1 (en) | 2005-02-28 | 2006-02-17 | Thin film transistor panel |
CA002562405A CA2562405A1 (en) | 2005-02-28 | 2006-02-17 | Thin film transistor panel |
TW095106498A TWI303884B (en) | 2005-02-28 | 2006-02-27 | Thin film transistor panel |
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US (1) | US7795621B2 (ja) |
EP (1) | EP1854145A1 (ja) |
JP (1) | JP5117667B2 (ja) |
KR (1) | KR100869884B1 (ja) |
CN (1) | CN1943039B (ja) |
CA (1) | CA2562405A1 (ja) |
TW (1) | TWI303884B (ja) |
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-
2005
- 2005-02-28 JP JP2005054403A patent/JP5117667B2/ja active Active
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2006
- 2006-02-16 US US11/356,407 patent/US7795621B2/en active Active
- 2006-02-17 CA CA002562405A patent/CA2562405A1/en not_active Abandoned
- 2006-02-17 EP EP20060714488 patent/EP1854145A1/en not_active Ceased
- 2006-02-17 WO PCT/JP2006/303348 patent/WO2006093028A1/en active Application Filing
- 2006-02-17 KR KR1020067022044A patent/KR100869884B1/ko active IP Right Grant
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- 2006-02-27 TW TW095106498A patent/TWI303884B/zh active
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EP1854145A1 (en) | 2007-11-14 |
CN1943039A (zh) | 2007-04-04 |
JP2006242987A (ja) | 2006-09-14 |
KR20070088288A (ko) | 2007-08-29 |
WO2006093028A1 (en) | 2006-09-08 |
US20060192204A1 (en) | 2006-08-31 |
CA2562405A1 (en) | 2006-09-08 |
KR100869884B1 (ko) | 2008-11-24 |
US7795621B2 (en) | 2010-09-14 |
TW200640014A (en) | 2006-11-16 |
CN1943039B (zh) | 2012-11-21 |
TWI303884B (en) | 2008-12-01 |
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