CN1943039B - 薄膜晶体管面板 - Google Patents

薄膜晶体管面板 Download PDF

Info

Publication number
CN1943039B
CN1943039B CN2006800001756A CN200680000175A CN1943039B CN 1943039 B CN1943039 B CN 1943039B CN 2006800001756 A CN2006800001756 A CN 2006800001756A CN 200680000175 A CN200680000175 A CN 200680000175A CN 1943039 B CN1943039 B CN 1943039B
Authority
CN
China
Prior art keywords
thin
film transistor
electrode
transparent
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2006800001756A
Other languages
English (en)
Other versions
CN1943039A (zh
Inventor
山口郁博
武居学
吉田基彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Remsen Innovations Ltd.
Samsung Display Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Publication of CN1943039A publication Critical patent/CN1943039A/zh
Application granted granted Critical
Publication of CN1943039B publication Critical patent/CN1943039B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种薄膜晶体管面板，包括：透明基板(1)；由光阻导电材料制成且形成在所述透明基板(1)上的扫描线(2)；垂直于所述扫描线(2)形成在所述透明基板(1)上且由光阻导电材料制成的数据线(3)；薄膜晶体管(5)，每个都具有连接于所述扫描线(2)之一的透明栅极(11)、连接于所述数据线(3)之一的透明漏极(16)、透明源极(15)以及透明半导体薄膜(13)；以及连接于所述薄膜晶体管(5)的透明像素电极(4)，其中，每个像素电极(4)被形成为覆盖每个所述薄膜晶体管(5)的所述栅极(11)的至少一部分。

Description

薄膜晶体管面板
技术领域
本发明涉及薄膜晶体管面板。
背景技术
作为液晶显示器中的薄膜晶体管面板，已经知道的是一种主动矩阵型薄膜晶体管面板。在主动矩阵型薄膜晶体管面板中，若干扫描线和若干数据线以在扫描线和数据线彼此垂直的方向上延伸的方式形成在一个基板上。在由一对扫描线和一对数据线所封闭的每个区域中，形成有作为转换件的像素电极和薄膜晶体管。每个像素电极通过一个薄膜晶体管与相应的扫描线和相应的数据线相连。因此，显示像素在矩阵中形成。而且JP2003-50405A公开了一种减少制造过程的方法，通过将像氧化锌或类似材料那样的透明材料应用到薄膜晶体管的半导体层上以用同样的材料一体地形成半导体层和透明像素电极。这种情况下，像素电极由包含杂质的半导体材料制成，并且以连接于半导体薄膜的方式与薄膜晶体管的半导体薄膜形成在同层上。薄膜晶体管的栅极、连接于栅极的扫描线、以及源极和漏极都由像铝合金或类似材料那样的光阻导电材料形成。
因为在传统的薄膜晶体管面板中的薄膜晶体管的栅极以及源极和漏极由光阻导电材料形成，栅极的部分不对像素的开口率做出贡献，并且因此传统的薄膜晶体管面板具有开口率小的问题。
发明内容
因此，本发明的一个目的是提出一种薄膜晶体管面板，其能够减少制造过程，且能够具有较大的开口率。
为了实现上面提到的目的，根据本发明的一个方面，所述薄膜晶体管面板包括：透明基板1；由光阻导电材料制成的形成在所述透明基板1上的扫描线2；垂直于所述扫描线2形成在所述透明基板1上且由光阻导电材料制成的数据线3；薄膜晶体管5，每个都具有连接于所述扫描线2之一的透明栅极11、连接于所述数据线3之一的透明漏极16、透明源极15以及透明半导体薄膜13；以及连接于所述薄膜晶体管5的透明像素电极4，其中，每个像素电极4被形成为覆盖每个所述薄膜晶体管5的所述栅极11的至少一部分。
附图说明
本发明将通过优选实施例并且参考附图来更详细描述。图中：
图1示出了作为本发明的第一实施例的在液晶显示器中的薄膜晶体管面板的主要部分的平面图。
图2A示出了沿着图1中的线IIA-IIA的剖视图。
图2B示出了沿着图1的线IIB-IIB的剖视图。
图3示出了作为本发明的第二实施例的在液晶显示器中的薄膜晶体管面板的主要部分的平面图。
图4A示出了沿着图3中的线IVA-IVA的剖视图，并且图4B示出了沿着图3的线IVB-IVB的剖视图。
图5A和5B示出了作为本发明的第三实施例的有机场致发光(EL)显示器的主要部分的剖视图。
图6A和6B示出了作为本发明的第四实施例的有机场致发光(EL)显示器的主要部分的剖视图。
具体实施方式
(第一实施例)
图1示出了作为本发明的第一实施例的在液晶显示器中的薄膜晶体管面板的主要部分的平面图。图2A示出了沿着图1中的线IIA-IIA的剖视图，图2B示出了沿着图1的线IIB-IIB的剖视图。薄膜晶体管面板具有一个玻璃基板1。
首先，参考图1给出说明。若干扫描线2和若干数据线3形成于玻璃基板1的顶面侧，在彼此成直角的交叉方向上延伸。包括连接于一个相应扫描线2和一个相应数据线3的薄膜晶体管5以及电连接于薄膜晶体管5的一个像素电极4的一个显示件布置在由线2和3封闭的每个区域中。所述区域以矩阵布置。这里，为了使图1清楚，像素电极4的边缘部分由倾斜的短实线绘成阴影。
在这种情况下，每个类正方形像素电极4布置在由扫描线2和数据线3封闭的每个类正方形区域内，其状态是像素电极4设置得尽可能接近扫描线2和数据线3。每个薄膜晶体管5布置在每个如图1所示的像素电极4的下左角部分的下侧，并且薄膜晶体管5的几乎整个部分都被像素电极4覆盖。
接下来，薄膜晶体管面板的具体结构将参考图2A和图2B描述。扫描线2形成在玻璃基板1的顶面上的预定位置，每个扫描线都由像铬或类似材料那样的光阻金属膜制成。栅极11形成在扫描线2的顶面上的预定位置，并且各别地形成在玻璃基板1的顶面上的扫描线2的附近，从而与扫描线2成直角交叉(见图1)。也就是说，每个栅极11的一个端部形成于每个扫描线2的顶面上。
这种情况下，栅极11由包含n型或p型杂质的透明金属氧化物形成。作为透明金属氧化物，例如可以是氧化锌、镁锌氧化物、镉锌氧化物以及类似物。作为n型杂质，例如可以是磷、砷、锑以及类似物。作为p型杂质，例如可以是硼、铝、镓、铟以及类似物。
作为形成栅极11和扫描线2的方法，推荐一种由溅射法形成薄膜的方法，其使用包含上面提到的n型或p型杂质的金属氧化物膜作为靶，通过光刻技术构图成所形成的膜。考虑到电场的移动性、特征的稳定性、以及可使用性，n型金属氧化物膜通常是合适的。然而，因为n型金属氧化物膜是耗尽型金属氧化物膜而且其泄漏电流很大，因此在考虑低功率消耗的情况下也可以使用p型金属氧化物膜，但是p型金属氧化物膜的使用并不意味着用于形成栅极11和扫描线2所使用的金属氧化物膜限制于p型金属氧化物膜。
由氮化硅制成的栅极绝缘膜12形成于其上具有扫描线2和栅极11的玻璃基板1的顶面上。各别具有2.5伏或更高的带隙并且各别由上面提到的透明和本征金属氧化物制成的半导体薄膜13形成在栅极11上的栅极绝缘膜12上。因为各别具有2.5伏或更高带隙的半导体薄膜13不吸收任何可见光，所以半导体薄膜13不泄漏任何光，并且因此不需要光阻。由氮化硅制成的通道保护膜14形成在半导体薄膜13的顶面的几乎中央部分。
每个数据线3在栅极绝缘膜12上的相应的两个像素电极4之间形成。每个数据线3的宽度比两个像素电极4的间隙窄。数据线3由金属膜形成，该金属膜具有光阻性和足够小的电阻值，比如铝、铬或类似材料。
由透明n型金属氧化物制成的源极15和漏极16形成在每个通道保护膜14的顶面的两侧，并且在通道保护膜14的两侧上的相应的半导体薄膜13的顶面上。金属氧化物和n型杂质的材料与栅极11的情况相同。漏极16形成为要被延伸以同相应的数据线3成直角交叉，因此延伸部分的端部重叠在数据线3上(见图1)。源极15和漏极16通过由溅射法形成薄膜的方法形成，使用n型金属氧化物膜作为靶，通过能与形成栅极11类似的光刻技术构图出源极15和漏极16。
这里，每个薄膜晶体管5由栅极11、栅极绝缘膜12、半导体薄膜13、通道保护膜14、源极15和漏极16构成。这种情况下，因为栅极11由透明的p型金属氧化物或者透明的n型金属氧化物形成，并且因为源极15和漏极16由透明的n型金属氧化物形成，所以薄膜晶体管5具有传输光的结构。
每个都由氮化硅制成的护膜17形成在其上具有薄膜晶体管5和数据线3的栅极绝缘膜12的顶面。接触孔18形成在护膜17的与源极15的预定位置相应的部分处。由像ITO(氧化铟锡)那样的透明导电材料制成的像素电极(用于像素的电极)4形成在护膜17的预定位置，这些位置要通过接触孔18与源极15电连接。这种情况下，每个像素电极4被形成为覆盖每个薄膜晶体管5的几乎全部。
如上面描述，因为在薄膜晶体管面板中，每个薄膜晶体管5具有传输光的结构并且几乎整个薄膜晶体管5被每个像素电极4覆盖，像素电极4的包括薄膜晶体管5的所有区域是传输区域，并且像素的开口率可以增大。这种情况下，尽管光进入薄膜晶体管5的由上面提到的透明本征金属氧化物制成的半导体薄膜13，半导体薄膜13实际上传输所进入的光，并且没有因此引发问题。
而且，在薄膜晶体管面板中，因为扫描线2和数据线3由代替包含杂质的透明金属氧化物的像铝、铬或类似材料那样的光阻金属来形成，所以可以防止像素电极4之间的光泄漏，并且电阻值可以充分小。
(第二实施例)
图3示出了作为本发明的第二实施例的在液晶显示器中的薄膜晶体管面板的主要部分的平面图。图4A示出了沿着图3中的线IVA-IVA的剖视图，图4B示出了沿着图3的线IVB-IVB的剖视图。而且在这个例子中，为了使图3清楚，像素电极4的边缘部分由倾斜的短实线绘成阴影。
薄膜晶体管面板不同于图1、图2A和图2B中示出的薄膜晶体管面板之处在于，护膜17被省略了，并且每个像素电极4由n型金属氧化物形成于每个通道保护膜14的顶面的一侧，在通道保护膜14的外侧上的每个半导体薄膜13的顶面上，且在栅极绝缘膜12的顶面上的每个预定位置，以使得像素电极4的一部分作为源极操作。
为了制造薄膜晶体管面板，使用了根据第一实施例描述的方法。也就是，每个都由具有光阻性的金属膜制成的扫描线2以及每个都由透明的p型或n型金属氧化物膜制成的栅极11形成于玻璃基板1的顶面。接着，形成栅极绝缘膜12。每个都由透明的本征金属氧化物制成的半导体薄膜13以及每个都由具有光阻性的金属膜制成的数据线3在栅极绝缘膜12上形成。通道保护膜14在半导体薄膜13的顶面的几乎中央部分形成。然后，通过溅射法形成一个n型金属氧化物膜，并且通过光刻法形成漏极16和像素电极4。然而，此时，像素电极4的形状制成将每个源极和每个漏极结合成一体的形状。
在这种情况下，因为像素电极4与漏极16形成于同一表面上，每个像素电极4的平面形状制成为在图3中的像素电极的下左侧的角部分被切断的形状。但是，因为用作源极的像素电极4的至少一部分，即形成于相应的通道保护膜14和相应的半导体薄膜13上的部分，覆盖了相应的栅极11的一部分，像素电极4和栅极11的重叠部分对像素的开口率做出贡献。因此，开口率可以增大。而且，像素电极4可以以同漏极16相同的过程形成，而且不需要形成护膜17和接触孔18以能够使过程的数量减少。
(第三实施例)
图5A和5B示出了作为本发明的第三实施例的有机场致发光(EL)显示器的主要部分的剖视图。在有机EL显示器中，与图2A和2B示出的薄膜晶体管面板的构成元件相同的元件用同图2A和2B相同的参考标号来表示，且省略了它们的描述。在有机EL显示器中，由有机EL制成的光发射部分形成在薄膜晶体管5上。也就是，有机EL显示器如下构造。仅仅是每个薄膜晶体管5的除了相应的源极15之外的部分被相应的护膜17覆盖。一个相应的阳极(用于像素的电极)21形成在源极15上，在护膜17的一部分上，并且在栅极绝缘膜12上。由聚酰亚胺或类似材料制成的一个相应的分隔壁22形成在护膜17和栅极绝缘膜12的顶面上的预定位置。一个相应的有机EL层23在分隔壁22与相邻像素的分隔壁22之间形成于阳极21的顶面。一个阴极24形成在有机EL层23和分隔壁22的顶面上。
在这种情况下，阳极21被形成为覆盖薄膜晶体管5的几乎整个部分。而且，阳极21由像ITO或类似材料那样的透明的导电材料形成，并且阴极24由像铝那样的高反射率金属形成。在这个结构中，因为从有机EL层23发射的光被形成于有机EL层23上的阴极24反射，以投射到玻璃基板1的侧面，该结构被称为底发射型。在这种底发射型有机EL显示器中，因为漏极16、源极15、半导体薄膜13和栅极11由透明金属氧化物膜形成，并且因为薄膜晶体管5传输已经从有机EL层23发射且已经被阴极24反射的光，所以薄膜晶体管5的全部区域变成了光发射区域，并且像素的开口率可以增大。
(第四实施例)
图6A和6B示出了作为本发明的第四实施例的有机EL显示器的主要部分的剖视图。该有机EL显示器的每个像素与图5A和5B示出的有机EL显示器的每个像素的区别在于，护膜17被省略了，而且阳极21由例如包括n型杂质的透明金属氧化物形成在通道保护膜14的顶面的一侧，在通道保护膜14的外侧上的半导体薄膜13的顶面，并且在栅极绝缘膜12的顶面上的预定位置，以使得阳极21也可以作为源极操作。
在这种情况下，与在图3中的像素电极4的下左侧的角部分切断像素电极4类似，阳极21、有机EL层23以及阴极24的预定的角部分被切断，因为阳极21与漏极16形成在同一表面上。然而，因为用作源极的阳极21的至少一部分，即形成在通道保护膜14和半导体薄膜13上的部分，覆盖了栅极11的一部分，阳极21和栅极11的重合部分对像素的开口率做出贡献，并且因此开口率可以增大。而且，阳极21可以以同漏极16相同的过程形成，而且因此能够使过程的数量减少。
(其他实施例)
尽管在例如图1、图2A和2B中，都是由含有例如n型杂质的金属氧化物制成的每个栅极11的一个端部和每个漏极16的一个端部分别形成在相应的扫描线2和相应的数据线3的每个顶面上，但本发明却并不限于这种结构。含有例如n型杂质的金属氧化物可以形成在例如扫描线2和数据线3的每个顶面的全部上。而且，扫描线2和数据线3可以形成在栅极11和漏极16的每一个端部的顶面上。在这种情况下，含有例如n型杂质的金属氧化物膜可以形成在扫描线2和数据线3的每个下表面的全部上。
而且，如果是有机EL显示面板，在一个像素中可以形成两个薄膜晶体管，像素由阳极21之一、有机EL层23和阴极24之一组成的群构成(例如参加JP2004-171882A)。而且，在一个像素中可以形成三个薄膜晶体管(例如参加JP2003-195810A)。
工业实用性
如上面所述，根据本发明，因为薄膜晶体管的栅极的至少一部分被用于像素的电极所覆盖，这个电极作为薄膜晶体管的在每个像素中传输光的结构，薄膜晶体管的栅极和用于像素的电极的重合部分对像素的开口率做出贡献，并且因此开口率可以增大。根据本发明的薄膜晶体管面板可以适当地被用于多种类型的显示器，例如LC显示器、EL显示器或者类似显示器。

Claims (11)

1.一种薄膜晶体管面板，包括：
透明基板(1)；
由光阻导电材料制成且形成在所述透明基板(1)上的扫描线(2)；
垂直于所述扫描线(2)形成在所述透明基板(1)上方且由光阻导电材料制成的数据线(3)；
薄膜晶体管(5)，每个薄膜晶体管(5)都包括：透明栅极(11)，所述透明栅极的一个端部叠置在扫描线(2)之一上从而电连接于所述扫描线(2)之一；透明漏极(16)，所述透明漏极的一个端部叠置于数据线(3)之一上从而电连接于所述数据线(3)之一；透明半导体薄膜(13)；和
透明像素电极(4)，
其中，每个像素电极(4)覆盖所述栅极(11)的至少一部分从而避开一个区域，在该区域处透明栅极(11)叠置于由光阻导电材料制成的扫描线(2)之一上，并且每个像素电极(4)作为每个薄膜晶体管(5)的源极操作。
2.根据权利要求1所述的薄膜晶体管面板，其特征在于，每个像素电极(4)被形成为覆盖半导体薄膜(13)的一部分。
3.根据权利要求1所述的薄膜晶体管面板，其特征在于，每个所述薄膜晶体管(5)包括由金属氧化物制成的所述半导体薄膜(13)、分别由包含杂质的金属氧化物制成的所述漏极(16)、作为源极操作的每个像素电极(4)以及所述栅极(11)。
4.根据权利要求3所述的薄膜晶体管面板，其特征在于，所述漏极(16)和作为所述源极操作的每个像素电极形成在所述半导体薄膜(13)上。
5.根据权利要求3所述的薄膜晶体管面板，其特征在于，每个所述薄膜晶体管(5)的所述栅极(11)由包含p型杂质的金属氧化物形成。
6.根据权利要求1所述的薄膜晶体管面板，其特征在于，一透明金属氧化物膜形成在每个所述扫描线(2)和数据线(3)的顶面和底面的至少之一上。
7.根据权利要求1所述的薄膜晶体管面板，其特征在于，作为源极操作的每个所述像素电极(4)由透明金属氧化物形成。
8.根据权利要求1所述的薄膜晶体管面板，其特征在于，进一步包括：
与作为源极操作的每个像素电极(4)电连接的透明阳极(21)；
有机EL层(23)；以及
阴极(24)。
9.根据权利要求8所述的薄膜晶体管面板，其特征在于，所述阳极(21)形成在作为源极操作的每个像素电极(4)上。
10.根据权利要求9所述的薄膜晶体管面板，其特征在于，所述阳极(21)、所述有机EL层(23)以及所述阴极(24)从作为源极操作的每个像素电极(4)一侧次序叠置。
11.根据权利要求10所述的薄膜晶体管面板，其特征在于，所述阴极(24)是反射电极。
CN2006800001756A 2005-02-28 2006-02-17 薄膜晶体管面板 Active CN1943039B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP054403/2005 2005-02-28
JP2005054403A JP5117667B2 (ja) 2005-02-28 2005-02-28 薄膜トランジスタパネル
PCT/JP2006/303348 WO2006093028A1 (en) 2005-02-28 2006-02-17 Thin film transistor panel

Publications (2)

Publication Number Publication Date
CN1943039A CN1943039A (zh) 2007-04-04
CN1943039B true CN1943039B (zh) 2012-11-21

Family

ID=36218101

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800001756A Active CN1943039B (zh) 2005-02-28 2006-02-17 薄膜晶体管面板

Country Status (8)

Country Link
US (1) US7795621B2 (zh)
EP (1) EP1854145A1 (zh)
JP (1) JP5117667B2 (zh)
KR (1) KR100869884B1 (zh)
CN (1) CN1943039B (zh)
CA (1) CA2562405A1 (zh)
TW (1) TWI303884B (zh)
WO (1) WO2006093028A1 (zh)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245031A (ja) * 2005-02-28 2006-09-14 Casio Comput Co Ltd 薄膜トランジスタパネル
JP4934599B2 (ja) * 2007-01-29 2012-05-16 キヤノン株式会社 アクティブマトリクス表示装置
CN101325201B (zh) * 2007-06-13 2011-04-13 北京京东方光电科技有限公司 一种透明薄膜晶体管的阵列基板结构及其制造方法
KR100847846B1 (ko) * 2007-08-01 2008-07-23 실리콘 디스플레이 (주) 국부 도핑을 이용한 박막트랜지스터의 제조 방법
KR100907255B1 (ko) * 2007-09-18 2009-07-10 한국전자통신연구원 유기 박막 트랜지스터를 구비하는 표시 장치
JP2009175198A (ja) * 2008-01-21 2009-08-06 Sony Corp Ｅｌ表示パネル及び電子機器
JP5248148B2 (ja) * 2008-03-10 2013-07-31 株式会社ポッカコーポレーション 抗メチシリン耐性黄色ブドウ球菌剤、及び抗バンコマイシン耐性腸球菌剤
US9041202B2 (en) * 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
EP2178133B1 (en) 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
JP5491833B2 (ja) * 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
US8114720B2 (en) * 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20100224880A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW201103090A (en) * 2009-07-01 2011-01-16 Univ Nat Chiao Tung Method for manufacturing a self-aligned thin film transistor and a structure of the same
KR20220100086A (ko) 2009-07-10 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101768786B1 (ko) * 2009-07-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR101907366B1 (ko) * 2009-07-18 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI596741B (zh) * 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027702A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
CN102023433B (zh) 2009-09-18 2012-02-29 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
KR101835748B1 (ko) 2009-10-09 2018-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
EP2486595B1 (en) 2009-10-09 2019-10-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
KR101680047B1 (ko) * 2009-10-14 2016-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011077916A1 (en) * 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013206919A (ja) * 2012-03-27 2013-10-07 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置
CN104752467A (zh) * 2013-12-30 2015-07-01 昆山国显光电有限公司 一种有机发光显示装置及其制备方法
GB2566673B (en) * 2017-07-21 2022-10-26 Flexenable Ltd Thin-Film Transistor (TFT) Architecture for Liquid Crystal Displays
CN107768386B (zh) 2017-11-16 2020-09-01 深圳市华星光电半导体显示技术有限公司 Tft阵列基板及其制作方法以及液晶显示面板
US12089459B2 (en) 2019-05-10 2024-09-10 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and electronic device
TWI721776B (zh) * 2020-02-06 2021-03-11 友達光電股份有限公司 主動元件基板及其製造方法
CN114265249B (zh) * 2021-12-16 2023-06-02 Tcl华星光电技术有限公司 一种阵列基板及显示终端

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069370A (en) * 1997-03-26 2000-05-30 Nec Corporation Field-effect transistor and fabrication method thereof and image display apparatus
US6303963B1 (en) * 1998-12-03 2001-10-16 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and semiconductor circuit
US6674495B1 (en) * 1999-09-30 2004-01-06 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same
US6713785B2 (en) * 2001-12-13 2004-03-30 Fuji Xerox Co., Ltd. Thin film transistor and display device having the same
US7495387B2 (en) * 2001-02-05 2009-02-24 Samsung Sdi Co., Ltd. Organic electroluminescent element and organic electroluminescent device including the same

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2203881B (en) * 1987-04-16 1991-03-27 Philips Electronic Associated Liquid crystal display device
JPH07119914B2 (ja) * 1989-01-27 1995-12-20 日本電気株式会社 薄膜電界効果型トランジスタ素子アレイ
JPH06194687A (ja) 1992-10-30 1994-07-15 Nec Corp 透過型アクティブマトリクス型液晶素子
JPH05251705A (ja) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP2543286B2 (ja) 1992-04-22 1996-10-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 液晶表示装置
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JPH09105952A (ja) * 1995-10-11 1997-04-22 Toshiba Electron Eng Corp アクティブマトリクス型液晶表示装置
JP3367821B2 (ja) * 1996-06-03 2003-01-20 シャープ株式会社 アクティブマトリクス基板
KR100209281B1 (ko) 1996-10-16 1999-07-15 김영환 액정 표시 소자 및 그 제조방법
JP3784491B2 (ja) 1997-03-28 2006-06-14 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
JP3750303B2 (ja) * 1997-09-11 2006-03-01 ソニー株式会社 液晶表示装置
JP3980156B2 (ja) 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
JP2000298440A (ja) * 1999-02-08 2000-10-24 Tdk Corp マトリックス表示装置
JP2001209331A (ja) * 2000-01-27 2001-08-03 Tdk Corp 薄膜表示装置
US6998656B2 (en) 2003-02-07 2006-02-14 Hewlett-Packard Development Company, L.P. Transparent double-injection field-effect transistor
TWI301915B (zh) 2000-03-17 2008-10-11 Seiko Epson Corp
JP2002108250A (ja) * 2000-09-29 2002-04-10 Sharp Corp アクティブマトリックス駆動型自発光表示装置及びその製造方法
US6509616B2 (en) 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP2003050405A (ja) 2000-11-15 2003-02-21 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル
JP4099324B2 (ja) 2000-11-27 2008-06-11 シャープ株式会社 液晶表示装置
SG138468A1 (en) 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
JP3594018B2 (ja) 2002-02-18 2004-11-24 富士電機ホールディングス株式会社 有機ｅｌディスプレイ
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
JP2004014982A (ja) 2002-06-11 2004-01-15 Konica Minolta Holdings Inc 半導体回路および画像表示装置
TW594232B (en) * 2002-11-26 2004-06-21 Hannstar Display Corp A method of utilizing dual-layer photoresist to form black matrix and spacers on a control circuit substrate
US7250930B2 (en) * 2003-02-07 2007-07-31 Hewlett-Packard Development Company, L.P. Transparent active-matrix display
JP2004347838A (ja) 2003-05-22 2004-12-09 Seiko Epson Corp 電気光学装置並びに電子機器及び投射型表示装置
JP4522145B2 (ja) 2004-05-25 2010-08-11 シャープ株式会社 表示装置用基板、その製造方法及び表示装置
JP2006245031A (ja) 2005-02-28 2006-09-14 Casio Comput Co Ltd 薄膜トランジスタパネル

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069370A (en) * 1997-03-26 2000-05-30 Nec Corporation Field-effect transistor and fabrication method thereof and image display apparatus
US6303963B1 (en) * 1998-12-03 2001-10-16 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and semiconductor circuit
US6674495B1 (en) * 1999-09-30 2004-01-06 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same
US7495387B2 (en) * 2001-02-05 2009-02-24 Samsung Sdi Co., Ltd. Organic electroluminescent element and organic electroluminescent device including the same
US6713785B2 (en) * 2001-12-13 2004-03-30 Fuji Xerox Co., Ltd. Thin film transistor and display device having the same

Also Published As

Publication number Publication date
KR100869884B1 (ko) 2008-11-24
TWI303884B (en) 2008-12-01
JP5117667B2 (ja) 2013-01-16
US20060192204A1 (en) 2006-08-31
KR20070088288A (ko) 2007-08-29
US7795621B2 (en) 2010-09-14
JP2006242987A (ja) 2006-09-14
CN1943039A (zh) 2007-04-04
TW200640014A (en) 2006-11-16
EP1854145A1 (en) 2007-11-14
WO2006093028A1 (en) 2006-09-08
CA2562405A1 (en) 2006-09-08

Similar Documents

Publication Publication Date Title
CN1943039B (zh) 薄膜晶体管面板
CN101128939B (zh) 薄膜晶体管面板
CN102403334B (zh) 有机电致发光显示器件
US8158989B2 (en) Organic light emitting diode display
CN106328689B (zh) 薄膜晶体管基板和包括该薄膜晶体管基板的显示装置
US9263704B2 (en) Organic light emitting diode display device
US8530910B2 (en) Organic light emitting display device including transmitting regions between pixel regions
US8963137B2 (en) Organic light-emitting display device and method of fabricating the same
US20160322438A1 (en) Organic white light emitting display apparatus
EP3680888A1 (en) Display device having light transmissive regions
US8797239B2 (en) Organic light-emitting display device
CN102169886A (zh) 有机发光显示装置
US7982386B2 (en) Organic light emitting display device with opaque electrodes
EP1298634A2 (en) Active matrix type display device
US20110204369A1 (en) Organic Light-Emitting Display Device
US9385170B2 (en) Thin film transistor array panel and organic light emitting diode display including the same
EP4152401B1 (en) Display substrate and manufacturing method therefor, and display apparatus
US7642547B2 (en) Light emitting device and method of manufacturing the same
KR20050101373A (ko) 듀얼패널타입 유기전계발광 소자 및 그 제조방법
JP2017168397A (ja) 表示装置
US11910670B2 (en) Display substrate and manufacturing method thereof, and compensating method for wire load
US12082460B2 (en) Display substrate and manufacturing method thereof, and display apparatus
US20240357891A1 (en) Display substrate and manufacturing method thereof, and display apparatus
US20240224661A1 (en) Dual-side organic light emitting display device
KR20220140073A (ko) 표시 장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: RUIMUSEN INNOVATION CO., LTD.

Free format text: FORMER OWNER: CASIO COMPUTER CO., LTD.

Effective date: 20131216

Owner name: SAMSUNG DISPLAY CO., LTD.

Free format text: FORMER OWNER: RUIMUSEN INNOVATION CO., LTD.

Effective date: 20131216

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20131216

Address after: South Korea Gyeonggi Do Yongin

Patentee after: SAMSUNG DISPLAY Co.,Ltd.

Address before: Washington, USA

Patentee before: Remsen Innovations Ltd.

Effective date of registration: 20131216

Address after: Washington, USA

Patentee after: Remsen Innovations Ltd.

Address before: Tokyo, Japan

Patentee before: CASIO COMPUTER Co.,Ltd.