JP2011003522A - フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法 - Google Patents
フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法 Download PDFInfo
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- JP2011003522A JP2011003522A JP2009230071A JP2009230071A JP2011003522A JP 2011003522 A JP2011003522 A JP 2011003522A JP 2009230071 A JP2009230071 A JP 2009230071A JP 2009230071 A JP2009230071 A JP 2009230071A JP 2011003522 A JP2011003522 A JP 2011003522A
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
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- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- CJGUQZGGEUNPFQ-UHFFFAOYSA-L zinc;2-(1,3-benzothiazol-2-yl)phenolate Chemical compound [Zn+2].[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1.[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1 CJGUQZGGEUNPFQ-UHFFFAOYSA-L 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8721—Metallic sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
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Abstract
【解決手段】可撓性及び可視光の透光性を有する基板と、基板上に設けられた第1の接着剤層と、第1の接着剤層上に位置する窒素及びケイ素を含む絶縁膜と、第1の電極、第1の電極と対向する第2の電極、及び第1の電極と第2の電極との間に設けられたEL層とを備える発光素子と、第2の電極上に形成された第2の接着剤層と、第2の接着剤層上に設けられた金属基板とを有し、金属基板の厚さは10μm以上200μm以下であるフレキシブル発光装置及び当該フレキシブル発光装置を用いた電子機器を提供する。
【選択図】図1
Description
本実施の形態における発光装置は、ガラスやセラミックなど耐熱性の高い作製基板上に、剥離層を介して保護膜を含む被剥離層(TFTや発光素子の第1の電極、発光素子などを含んでも良い)を形成した後、剥離層を境に作製基板と被剥離層とを分離して、分離した被剥離層を接着剤を用いてプラスチック基板上に接着して作製される。よって、透水性の高いプラスチック基板側に充分に透水性の低い保護膜が設けられる。このため、本実施の形態における発光装置はプラスチック基板と保護膜との間に第1の接着剤層が存在する。本明細書においてプラスチック基板とは、可撓性及び可視光に対する透光性を有する基板のことである。プラスチック基板としては、可撓性及び可視光に対する透光性を有する基板であれば特に限定はないが、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステル樹脂、ポリアクリルニトリル樹脂、ポリイミド樹脂、ポリメチルメタクリレート樹脂、ポリカーボネート樹脂(PC)、ポリエーテルスルフォン樹脂(PES)、ポリアミド樹脂、シクロオレフィン樹脂、ポリスチレン樹脂、ポリアミドイミド樹脂、ポリ塩化ビニル樹脂、などを好適に用いることができる。また、第1の接着材層は可視光に対する透光性を有する材料で形成する。例えば、紫外線硬化型等の光硬化型接着剤、反応硬化型接着剤、熱硬化型接着剤、嫌気型接着剤などの各種硬化型接着剤を用いることができる。これら接着剤としてはエポキシ樹脂やアクリル樹脂、シリコーン樹脂、フェノール樹脂などが用いられている。保護膜は透水性が低く、且つ可視光に対する透光性を有する材料で形成する。例えば、窒化ケイ素膜や窒化酸化ケイ素膜、酸化窒化ケイ素膜などが挙げられ、窒素とケイ素を含む絶縁膜を用いることが好ましい。
本実施の形態では、実施の形態1に示す発光装置をその一部に含む電子機器について説明する。
フレキシブル発光装置は、プラスチック基板を用いるため、ガラス基板などに比べて帯電しやすい。そこで本実施の形態では、図1(C)のコート膜124として透明導電膜を用い、静電気対策がなされたフレキシブル発光装置を作製する例を示す。
このような積層構造により、基板下部からの水蒸気や酸素の浸入を防止することができるようになる。
111 第1の接着剤層
112 保護膜
113 下地絶縁膜
114 画素TFT
115 TFT
116 被剥離層
117 第1の電極
118 隔壁
119 EL層
120 第2の電極
121 第2の接着剤層
122 金属基板
123 樹脂層
124 コート膜
125 保護膜
126 膜封止層
127 発光素子
128 第1の層間絶縁膜
129 第2の層間絶縁膜
200 作製基板
201 剥離層
202 仮支持基板
203 剥離用接着剤
300 カラーフィルタ層
301 バリア膜
302 カラーフィルタ基板
303 コート膜
304 層間絶縁膜
305 電極
306 平坦化膜
307 電極
400 第2の接着剤層
401 金属基板
402 FPC
500 第1の接着剤層
501 保護膜
502 画素部
503 ゲート側駆動回路
504 ソース側駆動回路
508 配線
511 電流制御用TFT
512 画素電極
513 nチャネル型TFT
514 pチャネル型TFT
515a 第1の層間絶縁膜
515b 第2の層間絶縁膜
516 EL層
517 第2の電極
517a 第1の導電層
517b 第2の導電層
518 発光素子
519 隔壁
520 低融点金属
521 封止膜
522 平坦化層
600 第1の電極
601 第2の電極
800 EL層
801 EL層
803 電荷発生層
1001 第1の電極
1002 第2の電極
1003 EL層
1004 電荷発生層
2111 第1の層
2112 第2の層
2113 第3の層
2114 第4の層
2114a 第1の電子輸送領域
2114b 第2の電子輸送領域
2115 第5の層
9101 筐体
9102 支持台
9103 表示部
9104 スピーカー部
9105 ビデオ入力端子
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9401 本体
9402 筐体
9403 表示部
9404 音声入力部
9405 音声出力部
9406 操作キー
9407 外部接続ポート
9501 本体
9502 表示部
9503 筐体
9504 外部接続ポート
9505 リモコン受信部
9506 受像部
9507 バッテリー
9508 音声入力部
9509 操作キー
9510 接眼部
9601 本体
9602 表示部
9603 外部メモリ挿入部
9604 スピーカー部
9605 操作キー
Claims (22)
- 可撓性及び可視光に対する透光性を有する基板と、
前記基板上に設けられた第1の接着剤層と、
前記第1の接着剤層上に位置する窒素及びケイ素を含む絶縁膜と、
前記絶縁膜上に形成された第1の電極、前記第1の電極と対向する第2の電極、及び前記第1の電極と前記第2の電極との間に設けられたEL層とを備える発光素子と、
前記第2の電極上に形成された第2の接着剤層と、
前記第2の接着剤層上に設けられた金属基板とを有し、
前記金属基板の厚さは10μm以上200μm以下であるフレキシブル発光装置。 - 可撓性及び可視光に対する透光性を有する基板と、
前記基板上に設けられた第1の接着剤層と、
前記第1の接着剤層上に位置する窒素及びケイ素を含む絶縁膜と、
前記絶縁膜上に設けられたTFT形成層と、
前記TFT形成層に設けられたTFTの一部と電気的に接続する第1の電極、前記第1の電極と対向する第2の電極、及び前記第1の電極と前記第2の電極との間に設けられたEL層とを備える発光素子と、
前記第2の電極上に形成された第2の接着剤層と、
前記第2の接着剤層上に設けられた金属基板とを有し、
前記金属基板の厚さは10μm以上200μm以下であるフレキシブル発光装置。 - 請求項2において、
前記TFT形成層に形成されたTFTの活性層には、結晶質シリコンが用いられているフレキシブル発光装置。 - 請求項3に記載のフレキシブル発光装置において、
複数の前記発光素子を含む画素部と、
前記画素部の外側に設けられた駆動回路部を有し、
前記駆動回路部が前記TFT形成層に形成されたTFTにより構成されているフレキシブル発光装置。 - 請求項1乃至請求項4のいずれか一項において、
前記発光素子の前記第2の電極と前記第2の接着剤層との間に膜封止層を形成するフレキシブル発光装置。 - 請求項1乃至請求項5のいずれか一項において、
前記金属基板はステンレス、アルミニウム、銅、ニッケル、アルミニウム合金から選ばれる材料によりなるフレキシブル発光装置。 - 請求項1乃至請求項6のいずれか一項において、
前記第1の接着剤層は、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、フェノール樹脂から選ばれる一種若しくは複数種の材料によりなるフレキシブル発光装置。 - 請求項1乃至請求項7のいずれか一項において、
前記第2の接着剤層は、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、フェノール樹脂から選ばれる一種若しくは複数種の材料によりなるフレキシブル発光装置。 - 請求項1乃至請求項8のいずれか一項において、
前記金属基板上にさらに樹脂層が設けられているフレキシブル発光装置。 - 請求項9に記載のフレキシブル発光装置において、
前記樹脂層は、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、フェノール樹脂、若しくはポリエステル樹脂から選ばれる一種または複数種からなる熱硬化性樹脂、又はポリプロピレン、ポリエチレン、ポリカーボネート、ポリスチレン、ポリアミド、ポリエーテルケトン、フッ素樹脂、若しくはポリエチレンナフタレートから選ばれる一種または複数種からなる熱可塑性樹脂を含むフレキシブル発光装置。 - 請求項1乃至請求項10のいずれか一項において、
前記可撓性及び可視光に対する透光性を有する基板、前記第1の接着剤層、前記第2の接着剤層及び前記樹脂層の少なくとも一にさらに繊維体が含まれているフレキシブル発光装置。 - 請求項1乃至請求項11のいずれか一項において、
前記可撓性及び可視光に対する透光性を有する基板と前記第1の接着剤層との間に、透水性の低い膜が形成されているフレキシブル発光装置。 - 請求項12において、
前記透水性の低い膜はケイ素及び窒素を含む膜またはアルミニウム及び窒素を含む膜、であるフレキシブル発光装置。 - 請求項1乃至請求項13のいずれか一項において、
前記可撓性及び可視光に対する透光性を有する基板における前記金属基板と対向する面と反対の面にコート膜を有するフレキシブル発光装置。 - 請求項14において、
前記コート膜は、可視光に対する透光性を有し、高硬度の膜であるフレキシブル発光装置。 - 請求項14において、
前記コート膜は、可視光に対する透光性を有する導電膜であるフレキシブル発光装置。 - 請求項1乃至請求項16のいずれか一に記載のフレキシブル発光装置を表示部に用いる電子機器。
- 作製基板上に剥離層を形成し、
前記剥離層上に窒素及びケイ素を含む絶縁膜を形成し、
前記絶縁膜上に第1の電極を形成し、
前記第1の電極上に前記第1の電極の端部を覆って隔壁を形成し、
前記第1の電極及び前記隔壁上に仮支持基板を接着し、
前記絶縁膜、前記第1の電極、隔壁、及び前記仮支持基板を、前記剥離層と前記絶縁膜との間で剥離することによって前記作製基板から分離し、
前記分離によって露出した前記絶縁膜の表面に第1の接着剤層を用いて可撓性及び可視光に対する透光性を有する基板を接着し、
前記仮支持基板を除去して、前記第1の電極の表面を露出させ、
露出した前記第1の電極を覆って有機化合物を含むEL層を形成し、
前記EL層を覆って第2の電極を形成し、
前記第2の電極の表面に第2の接着剤層を用いて厚さが10μm以上200μm以下の金属基板を接着するフレキシブル発光装置の作製方法。 - 作製基板上に剥離層を形成し、
前記剥離層上に窒素及びケイ素を含む絶縁膜を形成し、
前記絶縁膜上に複数のTFTを含むTFT形成層を形成し、
前記TFT形成層上に、前記TFT形成層に設けられた一部のTFTと電気的に接続する第1の電極を形成し、
前記第1の電極の端部を覆って隔壁を形成し、
前記第1の電極及び前記隔壁上に仮支持基板を接着し、
前記絶縁膜、前記TFT形成層、前記第1の電極、前記隔壁、及び前記仮支持基板を、前記剥離層と前記絶縁膜との間で剥離することによって前記作製基板から分離し、
前記分離によって露出した前記絶縁膜の表面に、第1の接着剤層を用いて可撓性及び可視光に対する透光性を有する基板を接着し、
前記仮支持基板を除去して、前記第1の電極の表面を露出させ、
露出した前記第1の電極を覆って有機化合物を含むEL層を形成し、
前記EL層を覆って第2の電極を形成し、
前記第2の電極の表面に第2の接着剤層を用いて厚さが10μm以上200μm以下の金属基板を接着するフレキシブル発光装置の作製方法。 - 請求項18又は請求項19において、
前記金属基板を接着した後、前記金属基板上に樹脂層を形成するフレキシブル発光装置の作製方法。 - 請求項18乃至請求項20のいずれか一項において、
前記第2の電極と前記第2の接着剤層との間に膜封止層を形成するフレキシブル発光装置の作製方法。 - 請求項18乃至請求項21のいずれか一項において、
前記絶縁膜は、プラズマCVD法によって250℃以上400℃以下の温度条件で成膜するフレキシブル発光装置の作製方法。
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