JP2011171288A - フレキシブル発光装置、電子機器、照明装置、及びフレキシブル発光装置の作製方法 - Google Patents
フレキシブル発光装置、電子機器、照明装置、及びフレキシブル発光装置の作製方法 Download PDFInfo
- Publication number
- JP2011171288A JP2011171288A JP2011008073A JP2011008073A JP2011171288A JP 2011171288 A JP2011171288 A JP 2011171288A JP 2011008073 A JP2011008073 A JP 2011008073A JP 2011008073 A JP2011008073 A JP 2011008073A JP 2011171288 A JP2011171288 A JP 2011171288A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- electrode
- emitting device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 239000010410 layer Substances 0.000 claims abstract description 683
- 239000000758 substrate Substances 0.000 claims abstract description 295
- 239000000463 material Substances 0.000 claims abstract description 155
- 229910052751 metal Inorganic materials 0.000 claims abstract description 118
- 239000002184 metal Substances 0.000 claims abstract description 118
- 239000012790 adhesive layer Substances 0.000 claims abstract description 101
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims description 64
- 229920005989 resin Polymers 0.000 claims description 63
- 239000011347 resin Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 59
- 230000017525 heat dissipation Effects 0.000 claims description 57
- -1 polypropylene Polymers 0.000 claims description 36
- 229910052757 nitrogen Inorganic materials 0.000 claims description 34
- 239000000853 adhesive Substances 0.000 claims description 33
- 238000005192 partition Methods 0.000 claims description 33
- 230000001070 adhesive effect Effects 0.000 claims description 32
- 239000011229 interlayer Substances 0.000 claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 238000007789 sealing Methods 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 238000000926 separation method Methods 0.000 claims description 16
- 239000000945 filler Substances 0.000 claims description 14
- 239000003365 glass fiber Substances 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 10
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 239000004925 Acrylic resin Substances 0.000 claims description 9
- 229920000178 Acrylic resin Polymers 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000005011 phenolic resin Substances 0.000 claims description 9
- 229920002050 silicone resin Polymers 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 239000011247 coating layer Substances 0.000 claims description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 239000004952 Polyamide Substances 0.000 claims description 5
- 229920002647 polyamide Polymers 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 229920001225 polyester resin Polymers 0.000 claims description 4
- 239000004645 polyester resin Substances 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000004743 Polypropylene Substances 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 229920001643 poly(ether ketone) Polymers 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229920005992 thermoplastic resin Polymers 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 78
- 229920003023 plastic Polymers 0.000 description 65
- 239000004033 plastic Substances 0.000 description 65
- 239000000126 substance Substances 0.000 description 48
- 239000011241 protective layer Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 23
- 229910052721 tungsten Inorganic materials 0.000 description 23
- 239000010937 tungsten Substances 0.000 description 23
- 238000002347 injection Methods 0.000 description 22
- 239000007924 injection Substances 0.000 description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 21
- 239000000835 fiber Substances 0.000 description 19
- 239000002131 composite material Substances 0.000 description 17
- 238000002425 crystallisation Methods 0.000 description 17
- 239000002585 base Substances 0.000 description 16
- 239000011231 conductive filler Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 230000008025 crystallization Effects 0.000 description 15
- 230000006870 function Effects 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 14
- 230000005525 hole transport Effects 0.000 description 14
- 230000035699 permeability Effects 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- 229910044991 metal oxide Inorganic materials 0.000 description 13
- 150000004706 metal oxides Chemical class 0.000 description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 239000011733 molybdenum Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229960001296 zinc oxide Drugs 0.000 description 10
- 229910003437 indium oxide Inorganic materials 0.000 description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 9
- AZFHXIBNMPIGOD-UHFFFAOYSA-N 4-hydroxypent-3-en-2-one iridium Chemical compound [Ir].CC(O)=CC(C)=O.CC(O)=CC(C)=O.CC(O)=CC(C)=O AZFHXIBNMPIGOD-UHFFFAOYSA-N 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 229910001930 tungsten oxide Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000006378 damage Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 6
- 150000001340 alkali metals Chemical class 0.000 description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 150000001342 alkaline earth metals Chemical class 0.000 description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 6
- 238000005452 bending Methods 0.000 description 6
- 239000002274 desiccant Substances 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000007983 Tris buffer Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000011256 inorganic filler Substances 0.000 description 5
- 229910003475 inorganic filler Inorganic materials 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 5
- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001716 carbazoles Chemical class 0.000 description 4
- 238000010549 co-Evaporation Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 3
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 3
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 3
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 3
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical group C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 2
- HDMYKJVSQIHZLM-UHFFFAOYSA-N 1-[3,5-di(pyren-1-yl)phenyl]pyrene Chemical compound C1=CC(C=2C=C(C=C(C=2)C=2C3=CC=C4C=CC=C5C=CC(C3=C54)=CC=2)C=2C3=CC=C4C=CC=C5C=CC(C3=C54)=CC=2)=C2C=CC3=CC=CC4=CC=C1C2=C43 HDMYKJVSQIHZLM-UHFFFAOYSA-N 0.000 description 2
- XOYZGLGJSAZOAG-UHFFFAOYSA-N 1-n,1-n,4-n-triphenyl-4-n-[4-[4-(n-[4-(n-phenylanilino)phenyl]anilino)phenyl]phenyl]benzene-1,4-diamine Chemical group C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 XOYZGLGJSAZOAG-UHFFFAOYSA-N 0.000 description 2
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 2
- BFTIPCRZWILUIY-UHFFFAOYSA-N 2,5,8,11-tetratert-butylperylene Chemical group CC(C)(C)C1=CC(C2=CC(C(C)(C)C)=CC=3C2=C2C=C(C=3)C(C)(C)C)=C3C2=CC(C(C)(C)C)=CC3=C1 BFTIPCRZWILUIY-UHFFFAOYSA-N 0.000 description 2
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 2
- UQVFZEYHQJJGPD-UHFFFAOYSA-N 9-[4-(10-phenylanthracen-9-yl)phenyl]carbazole Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=C(N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 UQVFZEYHQJJGPD-UHFFFAOYSA-N 0.000 description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- SXGIRTCIFPJUEQ-UHFFFAOYSA-N 9-anthracen-9-ylanthracene Chemical group C1=CC=CC2=CC3=CC=CC=C3C(C=3C4=CC=CC=C4C=C4C=CC=CC4=3)=C21 SXGIRTCIFPJUEQ-UHFFFAOYSA-N 0.000 description 2
- 102100025982 BMP/retinoic acid-inducible neural-specific protein 1 Human genes 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 101000933342 Homo sapiens BMP/retinoic acid-inducible neural-specific protein 1 Proteins 0.000 description 2
- 101000715194 Homo sapiens Cell cycle and apoptosis regulator protein 2 Proteins 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- SORGEQQSQGNZFI-UHFFFAOYSA-N [azido(phenoxy)phosphoryl]oxybenzene Chemical compound C=1C=CC=CC=1OP(=O)(N=[N+]=[N-])OC1=CC=CC=C1 SORGEQQSQGNZFI-UHFFFAOYSA-N 0.000 description 2
- 125000005595 acetylacetonate group Chemical group 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 2
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000412 dendrimer Substances 0.000 description 2
- 229920000736 dendritic polymer Polymers 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical group O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- ADHNFLCTOCFIFV-UHFFFAOYSA-N europium(3+) 1,10-phenanthroline Chemical compound [Eu+3].c1cnc2c(c1)ccc1cccnc21 ADHNFLCTOCFIFV-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- AOZVYCYMTUWJHJ-UHFFFAOYSA-K iridium(3+) pyridine-2-carboxylate Chemical compound [Ir+3].[O-]C(=O)C1=CC=CC=N1.[O-]C(=O)C1=CC=CC=N1.[O-]C(=O)C1=CC=CC=N1 AOZVYCYMTUWJHJ-UHFFFAOYSA-K 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000017105 transposition Effects 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- IWZZBBJTIUYDPZ-DVACKJPTSA-N (z)-4-hydroxypent-3-en-2-one;iridium;2-phenylpyridine Chemical compound [Ir].C\C(O)=C\C(C)=O.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 IWZZBBJTIUYDPZ-DVACKJPTSA-N 0.000 description 1
- RTSZQXSYCGBHMO-UHFFFAOYSA-N 1,2,4-trichloro-3-prop-1-ynoxybenzene Chemical compound CC#COC1=C(Cl)C=CC(Cl)=C1Cl RTSZQXSYCGBHMO-UHFFFAOYSA-N 0.000 description 1
- FQNVFRPAQRVHKO-UHFFFAOYSA-N 1-n,4-n-bis(4-methylphenyl)-1-n,4-n-diphenylbenzene-1,4-diamine Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(C)=CC=1)C1=CC=CC=C1 FQNVFRPAQRVHKO-UHFFFAOYSA-N 0.000 description 1
- VOIVTTPPKHORBL-UHFFFAOYSA-N 1-naphthalen-1-ylanthracene Chemical compound C1=CC=C2C(C=3C4=CC5=CC=CC=C5C=C4C=CC=3)=CC=CC2=C1 VOIVTTPPKHORBL-UHFFFAOYSA-N 0.000 description 1
- OOWLPGTVRWFLCX-UHFFFAOYSA-N 2,3,6,7-tetramethyl-9,10-dinaphthalen-1-ylanthracene Chemical compound C1=CC=C2C(C=3C4=CC(C)=C(C)C=C4C(C=4C5=CC=CC=C5C=CC=4)=C4C=C(C(=CC4=3)C)C)=CC=CC2=C1 OOWLPGTVRWFLCX-UHFFFAOYSA-N 0.000 description 1
- JEBPFDQAOYARIB-UHFFFAOYSA-N 2,3,6,7-tetramethyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C=3C4=CC(C)=C(C)C=C4C(C=4C=C5C=CC=CC5=CC=4)=C4C=C(C(=CC4=3)C)C)=CC=C21 JEBPFDQAOYARIB-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- QUOSAXMWQSSMJW-UHFFFAOYSA-N 2-[2,6-bis[2-[4-(dimethylamino)phenyl]ethenyl]pyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CC(=C(C#N)C#N)C=C(C=CC=2C=CC(=CC=2)N(C)C)O1 QUOSAXMWQSSMJW-UHFFFAOYSA-N 0.000 description 1
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 1
- UOOBIWAELCOCHK-UHFFFAOYSA-N 2-[2-propan-2-yl-6-[2-(4,4,10,10-tetramethyl-1-azatricyclo[7.3.1.05,13]trideca-5,7,9(13)-trien-7-yl)ethenyl]pyran-4-ylidene]propanedinitrile Chemical compound O1C(C(C)C)=CC(=C(C#N)C#N)C=C1C=CC1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 UOOBIWAELCOCHK-UHFFFAOYSA-N 0.000 description 1
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
- WMAXWOOEPJQXEB-UHFFFAOYSA-N 2-phenyl-5-(4-phenylphenyl)-1,3,4-oxadiazole Chemical compound C1=CC=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 WMAXWOOEPJQXEB-UHFFFAOYSA-N 0.000 description 1
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 1
- MNHPNCZSKTUPMB-UHFFFAOYSA-N 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene Chemical compound C=12C=CC=CC2=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C2=CC(C(C)(C)C)=CC=C2C=1C(C=C1)=CC=C1C1=CC=CC=C1 MNHPNCZSKTUPMB-UHFFFAOYSA-N 0.000 description 1
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 1
- WBPXZSIKOVBSAS-UHFFFAOYSA-N 2-tert-butylanthracene Chemical compound C1=CC=CC2=CC3=CC(C(C)(C)C)=CC=C3C=C21 WBPXZSIKOVBSAS-UHFFFAOYSA-N 0.000 description 1
- GRTDQSRHHHDWSQ-UHFFFAOYSA-N 3,6-diphenyl-9-[4-(10-phenylanthracen-9-yl)phenyl]carbazole Chemical compound C1=CC=CC=C1C1=CC=C(N(C=2C=CC(=CC=2)C=2C3=CC=CC=C3C(C=3C=CC=CC=3)=C3C=CC=CC3=2)C=2C3=CC(=CC=2)C=2C=CC=CC=2)C3=C1 GRTDQSRHHHDWSQ-UHFFFAOYSA-N 0.000 description 1
- TVMBOHMLKCZFFW-UHFFFAOYSA-N 3-N,6-N,9-triphenyl-3-N,6-N-bis(9-phenylcarbazol-3-yl)carbazole-3,6-diamine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC(=CC=C3N(C=3C=CC=CC=3)C2=CC=1)N(C=1C=CC=CC=1)C=1C=C2C3=CC=CC=C3N(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 TVMBOHMLKCZFFW-UHFFFAOYSA-N 0.000 description 1
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- YLYPIBBGWLKELC-UHFFFAOYSA-N 4-(dicyanomethylene)-2-methyl-6-(4-(dimethylamino)styryl)-4H-pyran Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-UHFFFAOYSA-N 0.000 description 1
- ZNJRONVKWRHYBF-VOTSOKGWSA-N 4-(dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4h-pyran Chemical compound O1C(C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(CCCN2CCC3)=C2C3=C1 ZNJRONVKWRHYBF-VOTSOKGWSA-N 0.000 description 1
- LGDCSNDMFFFSHY-UHFFFAOYSA-N 4-butyl-n,n-diphenylaniline Polymers C1=CC(CCCC)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 LGDCSNDMFFFSHY-UHFFFAOYSA-N 0.000 description 1
- 125000001255 4-fluorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1F 0.000 description 1
- IJVFZXJHZBXCJC-UHFFFAOYSA-N 4-n-[4-(9,10-diphenylanthracen-2-yl)phenyl]-1-n,1-n,4-n-triphenylbenzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)C=1C=C2C(C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C=CC=CC=3)C2=CC=1)C1=CC=CC=C1 IJVFZXJHZBXCJC-UHFFFAOYSA-N 0.000 description 1
- KLNDKWAYVMOOFU-UHFFFAOYSA-N 4-n-[9,10-bis(2-phenylphenyl)anthracen-2-yl]-1-n,1-n,4-n-triphenylbenzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=C2C(C=3C(=CC=CC=3)C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C(=CC=CC=3)C=3C=CC=CC=3)C2=CC=1)C1=CC=CC=C1 KLNDKWAYVMOOFU-UHFFFAOYSA-N 0.000 description 1
- KIYZNTXHGDXHQH-UHFFFAOYSA-N 5,12-diphenyl-6,11-bis(4-phenylphenyl)tetracene Chemical compound C1=CC=CC=C1C1=CC=C(C=2C3=C(C=4C=CC=CC=4)C4=CC=CC=C4C(C=4C=CC=CC=4)=C3C(C=3C=CC(=CC=3)C=3C=CC=CC=3)=C3C=CC=CC3=2)C=C1 KIYZNTXHGDXHQH-UHFFFAOYSA-N 0.000 description 1
- TYGSHIPXFUQBJO-UHFFFAOYSA-N 5-n,5-n,11-n,11-n-tetrakis(4-methylphenyl)tetracene-5,11-diamine Chemical compound C1=CC(C)=CC=C1N(C=1C2=CC3=CC=CC=C3C(N(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)=C2C=C2C=CC=CC2=1)C1=CC=C(C)C=C1 TYGSHIPXFUQBJO-UHFFFAOYSA-N 0.000 description 1
- UOOBIWAELCOCHK-BQYQJAHWSA-N 870075-87-9 Chemical compound O1C(C(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 UOOBIWAELCOCHK-BQYQJAHWSA-N 0.000 description 1
- NKEZXXDRXPPROK-UHFFFAOYSA-N 9,10-bis(2-naphthalen-1-ylphenyl)anthracene Chemical compound C12=CC=CC=C2C(C2=CC=CC=C2C=2C3=CC=CC=C3C=CC=2)=C(C=CC=C2)C2=C1C1=CC=CC=C1C1=CC=CC2=CC=CC=C12 NKEZXXDRXPPROK-UHFFFAOYSA-N 0.000 description 1
- USIXUMGAHVBSHQ-UHFFFAOYSA-N 9,10-bis(3,5-diphenylphenyl)anthracene Chemical compound C1=CC=CC=C1C1=CC(C=2C=CC=CC=2)=CC(C=2C3=CC=CC=C3C(C=3C=C(C=C(C=3)C=3C=CC=CC=3)C=3C=CC=CC=3)=C3C=CC=CC3=2)=C1 USIXUMGAHVBSHQ-UHFFFAOYSA-N 0.000 description 1
- YTSGZCWSEMDTBC-UHFFFAOYSA-N 9,10-bis(4-methylnaphthalen-1-yl)anthracene Chemical compound C12=CC=CC=C2C(C)=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=C(C)C2=CC=CC=C12 YTSGZCWSEMDTBC-UHFFFAOYSA-N 0.000 description 1
- BITWULPDIGXQDL-UHFFFAOYSA-N 9,10-bis[4-(2,2-diphenylethenyl)phenyl]anthracene Chemical compound C=1C=C(C=2C3=CC=CC=C3C(C=3C=CC(C=C(C=4C=CC=CC=4)C=4C=CC=CC=4)=CC=3)=C3C=CC=CC3=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 BITWULPDIGXQDL-UHFFFAOYSA-N 0.000 description 1
- VIZUPBYFLORCRA-UHFFFAOYSA-N 9,10-dinaphthalen-2-ylanthracene Chemical compound C12=CC=CC=C2C(C2=CC3=CC=CC=C3C=C2)=C(C=CC=C2)C2=C1C1=CC=C(C=CC=C2)C2=C1 VIZUPBYFLORCRA-UHFFFAOYSA-N 0.000 description 1
- FCNCGHJSNVOIKE-UHFFFAOYSA-N 9,10-diphenylanthracene Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 description 1
- OEYLQYLOSLLBTR-UHFFFAOYSA-N 9-(2-phenylphenyl)-10-[10-(2-phenylphenyl)anthracen-9-yl]anthracene Chemical group C1=CC=CC=C1C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1C1=CC=CC=C1 OEYLQYLOSLLBTR-UHFFFAOYSA-N 0.000 description 1
- SMFWPCTUTSVMLQ-UHFFFAOYSA-N 9-N,9-N,21-N,21-N-tetrakis(4-methylphenyl)-4,15-diphenylheptacyclo[12.10.1.13,7.02,12.018,25.019,24.011,26]hexacosa-1,3,5,7,9,11(26),12,14,16,18(25),19(24),20,22-tridecaene-9,21-diamine Chemical compound C1=CC(C)=CC=C1N(C=1C=C2C(C=3[C]4C5=C(C=6C=CC=CC=6)C=CC6=CC(=CC([C]56)=C4C=C4C(C=5C=CC=CC=5)=CC=C2C=34)N(C=2C=CC(C)=CC=2)C=2C=CC(C)=CC=2)=CC=1)C1=CC=C(C)C=C1 SMFWPCTUTSVMLQ-UHFFFAOYSA-N 0.000 description 1
- DTGCMKMICLCAQU-UHFFFAOYSA-N 9-[3-[2-(3-phenanthren-9-ylphenyl)ethenyl]phenyl]phenanthrene Chemical compound C1=CC=C2C(C=3C=CC=C(C=3)C=CC=3C=C(C=CC=3)C=3C4=CC=CC=C4C4=CC=CC=C4C=3)=CC3=CC=CC=C3C2=C1 DTGCMKMICLCAQU-UHFFFAOYSA-N 0.000 description 1
- HOGUGXVETSOMRE-UHFFFAOYSA-N 9-[4-[2-(4-phenanthren-9-ylphenyl)ethenyl]phenyl]phenanthrene Chemical compound C1=CC=C2C(C3=CC=C(C=C3)C=CC=3C=CC(=CC=3)C=3C4=CC=CC=C4C4=CC=CC=C4C=3)=CC3=CC=CC=C3C2=C1 HOGUGXVETSOMRE-UHFFFAOYSA-N 0.000 description 1
- XCICDYGIJBPNPC-UHFFFAOYSA-N 9-[4-[3,5-bis(4-carbazol-9-ylphenyl)phenyl]phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=C(C=C(C=2)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 XCICDYGIJBPNPC-UHFFFAOYSA-N 0.000 description 1
- ZWSVEGKGLOHGIQ-UHFFFAOYSA-N 9-[4-[4-(4-carbazol-9-ylphenyl)-2,3,5,6-tetraphenylphenyl]phenyl]carbazole Chemical compound C1=CC=CC=C1C(C(=C(C=1C=CC=CC=1)C(C=1C=CC=CC=1)=C1C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)=C1C1=CC=CC=C1 ZWSVEGKGLOHGIQ-UHFFFAOYSA-N 0.000 description 1
- NBYGJKGEGNTQBK-UHFFFAOYSA-N 9-phenyl-10-(10-phenylanthracen-9-yl)anthracene Chemical group C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 NBYGJKGEGNTQBK-UHFFFAOYSA-N 0.000 description 1
- AEEPLSWKIVXXLE-UHFFFAOYSA-N 9-phenyl-3-[9-[4-(10-phenylanthracen-9-yl)phenyl]carbazol-3-yl]carbazole Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=C(N2C3=CC=C(C=C3C3=CC=CC=C32)C=2C=C3C4=CC=CC=C4N(C=4C=CC=CC=4)C3=CC=2)C=C1 AEEPLSWKIVXXLE-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YGUHOGWXAFVRHD-UHFFFAOYSA-N C1=CC=C2C=C3C(C4=CC=CC=C4C=4C5=CC=CC=C5C=CC=4)=CC=CC3=CC2=C1 Chemical compound C1=CC=C2C=C3C(C4=CC=CC=C4C=4C5=CC=CC=C5C=CC=4)=CC=CC3=CC2=C1 YGUHOGWXAFVRHD-UHFFFAOYSA-N 0.000 description 1
- ZKHISQHQYQCSJE-UHFFFAOYSA-N C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=C(C=C(C=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=C(C=C(C=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 ZKHISQHQYQCSJE-UHFFFAOYSA-N 0.000 description 1
- MSDMPJCOOXURQD-UHFFFAOYSA-N C545T Chemical compound C1=CC=C2SC(C3=CC=4C=C5C6=C(C=4OC3=O)C(C)(C)CCN6CCC5(C)C)=NC2=C1 MSDMPJCOOXURQD-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 241000968352 Scandia <hydrozoan> Species 0.000 description 1
- 229920001800 Shellac Polymers 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- GBKYFASVJPZWLI-UHFFFAOYSA-N [Pt+2].N1C(C=C2C(=C(CC)C(C=C3C(=C(CC)C(=C4)N3)CC)=N2)CC)=C(CC)C(CC)=C1C=C1C(CC)=C(CC)C4=N1 Chemical compound [Pt+2].N1C(C=C2C(=C(CC)C(C=C3C(=C(CC)C(=C4)N3)CC)=N2)CC)=C(CC)C(CC)=C1C=C1C(CC)=C(CC)C4=N1 GBKYFASVJPZWLI-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- SUFKFXIFMLKZTD-UHFFFAOYSA-N [Tb+3].N1=CC=CC2=CC=C3C=CC=NC3=C12 Chemical compound [Tb+3].N1=CC=CC2=CC=C3C=CC=NC3=C12 SUFKFXIFMLKZTD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Chemical class C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical group C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 150000001846 chrysenes Chemical class 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- JRUYYVYCSJCVMP-UHFFFAOYSA-N coumarin 30 Chemical compound C1=CC=C2N(C)C(C=3C4=CC=C(C=C4OC(=O)C=3)N(CC)CC)=NC2=C1 JRUYYVYCSJCVMP-UHFFFAOYSA-N 0.000 description 1
- BHQBDOOJEZXHPS-UHFFFAOYSA-N ctk3i0272 Chemical group C1=CC=CC=C1C(C(=C(C=1C=CC=CC=1)C(=C1C=2C=CC=CC=2)C=2C3=CC=CC=C3C(C=3C4=CC=CC=C4C(C=4C(=C(C=5C=CC=CC=5)C(C=5C=CC=CC=5)=C(C=5C=CC=CC=5)C=4C=4C=CC=CC=4)C=4C=CC=CC=4)=C4C=CC=CC4=3)=C3C=CC=CC3=2)C=2C=CC=CC=2)=C1C1=CC=CC=C1 BHQBDOOJEZXHPS-UHFFFAOYSA-N 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- GQDKQZAEQBGVBS-UHFFFAOYSA-N dibenzo[g,p]chrysene Chemical class C1=CC=CC2=C3C4=CC=CC=C4C4=CC=CC=C4C3=C(C=CC=C3)C3=C21 GQDKQZAEQBGVBS-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- WOYDRSOIBHFMGB-UHFFFAOYSA-N n,9-diphenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC=CC=C3N(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 WOYDRSOIBHFMGB-UHFFFAOYSA-N 0.000 description 1
- BBNZOXKLBAWRSH-UHFFFAOYSA-N n,9-diphenyl-n-[4-(10-phenylanthracen-9-yl)phenyl]carbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC=CC=C3N(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(C=2C3=CC=CC=C3C(C=3C=CC=CC=3)=C3C=CC=CC3=2)C=C1 BBNZOXKLBAWRSH-UHFFFAOYSA-N 0.000 description 1
- LNFOMBWFZZDRKO-UHFFFAOYSA-N n,9-diphenyl-n-[4-[4-(10-phenylanthracen-9-yl)phenyl]phenyl]carbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC=CC=C3N(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(C=2C=CC(=CC=2)C=2C3=CC=CC=C3C(C=3C=CC=CC=3)=C3C=CC=CC3=2)C=C1 LNFOMBWFZZDRKO-UHFFFAOYSA-N 0.000 description 1
- NCCYEOZLSGJEDF-UHFFFAOYSA-N n,n,9-triphenyl-10h-anthracen-9-amine Chemical compound C12=CC=CC=C2CC2=CC=CC=C2C1(C=1C=CC=CC=1)N(C=1C=CC=CC=1)C1=CC=CC=C1 NCCYEOZLSGJEDF-UHFFFAOYSA-N 0.000 description 1
- XAWQWMLNBYNXJX-UHFFFAOYSA-N n,n-diphenyl-9-[4-(10-phenylanthracen-9-yl)phenyl]carbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC=CC=C3N(C=3C=CC(=CC=3)C=3C4=CC=CC=C4C(C=4C=CC=CC=4)=C4C=CC=CC4=3)C2=CC=1)C1=CC=CC=C1 XAWQWMLNBYNXJX-UHFFFAOYSA-N 0.000 description 1
- CRWAGLGPZJUQQK-UHFFFAOYSA-N n-(4-carbazol-9-ylphenyl)-4-[2-[4-(n-(4-carbazol-9-ylphenyl)anilino)phenyl]ethenyl]-n-phenylaniline Chemical compound C=1C=C(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=CC=1C=CC(C=C1)=CC=C1N(C=1C=CC(=CC=1)N1C2=CC=CC=C2C2=CC=CC=C21)C1=CC=CC=C1 CRWAGLGPZJUQQK-UHFFFAOYSA-N 0.000 description 1
- AJNJGJDDJIBTBP-UHFFFAOYSA-N n-(9,10-diphenylanthracen-2-yl)-n,9-diphenylcarbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C(C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 AJNJGJDDJIBTBP-UHFFFAOYSA-N 0.000 description 1
- UMFJAHHVKNCGLG-UHFFFAOYSA-N n-Nitrosodimethylamine Chemical compound CN(C)N=O UMFJAHHVKNCGLG-UHFFFAOYSA-N 0.000 description 1
- KUGSVDXBPQUXKX-UHFFFAOYSA-N n-[9,10-bis(2-phenylphenyl)anthracen-2-yl]-n,9-diphenylcarbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C(C=3C(=CC=CC=3)C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C(=CC=CC=3)C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 KUGSVDXBPQUXKX-UHFFFAOYSA-N 0.000 description 1
- COVCYOMDZRYBNM-UHFFFAOYSA-N n-naphthalen-1-yl-9-phenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N1C2=CC=C(N(C=3C=C4C5=CC=CC=C5N(C=5C=CC=CC=5)C4=CC=3)C=3C4=CC=CC=C4C=CC=3)C=C2C2=CC=CC=C21 COVCYOMDZRYBNM-UHFFFAOYSA-N 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- HJGMWXTVGKLUAQ-UHFFFAOYSA-N oxygen(2-);scandium(3+) Chemical compound [O-2].[O-2].[O-2].[Sc+3].[Sc+3] HJGMWXTVGKLUAQ-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- 125000000843 phenylene group Chemical class C1(=C(C=CC=C1)*)* 0.000 description 1
- 229920000078 poly(4-vinyltriphenylamine) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920001197 polyacetylene Chemical class 0.000 description 1
- 229920006350 polyacrylonitrile resin Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- VLRICFVOGGIMKK-UHFFFAOYSA-N pyrazol-1-yloxyboronic acid Chemical compound OB(O)ON1C=CC=N1 VLRICFVOGGIMKK-UHFFFAOYSA-N 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004208 shellac Substances 0.000 description 1
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 description 1
- 229940113147 shellac Drugs 0.000 description 1
- 235000013874 shellac Nutrition 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- CJGUQZGGEUNPFQ-UHFFFAOYSA-L zinc;2-(1,3-benzothiazol-2-yl)phenolate Chemical compound [Zn+2].[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1.[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1 CJGUQZGGEUNPFQ-UHFFFAOYSA-L 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8721—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8794—Arrangements for heating and cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】可撓性及び可視光に対する透光性を有する基板と、基板上に設けられた第1の接着剤層と、第1の接着剤層上に位置する絶縁層と、絶縁層上に形成された第1の電極、第1の電極と対向する第2の電極、及び第1の電極と第2の電極との間に設けられた発光性の有機化合物を含む層とを備える発光素子と、第2の電極上に形成された第2の接着剤層と、第2の接着剤層上に設けられた金属基板と、金属基板上に形成された放熱材料層とを有するフレキシブル発光装置を提供する。
【選択図】図1
Description
本実施の形態では、本発明の一態様の発光装置及び本発明の一態様の発光装置の作製方法について説明する。まず、本実施の形態の発光装置を、図1を用いて説明する。
本実施の形態では、実施の形態1に示す発光装置をその一部に含む電子機器、及び照明装置について図5を用いて説明する。
111 第1の接着剤層
112 保護層
113 下地絶縁層
114 画素部トランジスタ
115 駆動回路部トランジスタ
116 被剥離層
117 第1の電極
118 隔壁
119 EL層
120 第2の電極
121 第2の接着剤層
122 金属基板
123 樹脂層
124 コート層
125 防水層
126 膜封止層
127 発光素子
128 第1の層間絶縁層
129 第2の層間絶縁層
130 放熱材料層
200 作製基板
201 剥離層
202 仮支持基板
203 剥離用接着剤
300 カラーフィルタ層
301 バリア層
302 カラーフィルタ基板
303 コート層
304 層間絶縁層
305 電極
306 平坦化層
307 電極
400 第2の接着剤層
401 金属基板
402 FPC
403 放熱材料層
404 膜封止層
405 コート層
500 第1の接着剤層
501 保護層
502 画素部
503 ゲート側駆動回路
504 ソース側駆動回路
511 電流制御用トランジスタ
512 画素電極
513 nチャネル型トランジスタ
514 pチャネル型トランジスタ
516 EL層
517 第2の電極
518 発光素子
519 隔壁
520 低融点金属
521 カラーフィルタ層
531 下地絶縁層
600 第1の電極
601 第2の電極
800 EL層
801 EL層
803 電荷発生層
1001 第1の電極
1002 第2の電極
1003 EL層
1004 電荷発生層
2111 正孔注入層
2112 正孔輸送層
2113a 第1の発光層
2113b 第2の発光層
2114 電子輸送層
2115 電子注入層
515a 第1の層間絶縁層
515b 第2の層間絶縁層
517a 第1の導電層
517b 第2の導電層
9501 照明部
9503 支柱
9505 支持台
9601 本体
9602 表示部
9603 外部メモリ挿入部
9604 スピーカー部
9605 操作キー
Claims (32)
- 可撓性及び可視光に対する透光性を有する基板と、
前記基板上に設けられた第1の接着剤層と、
前記第1の接着剤層上に位置する絶縁層と、
前記絶縁層上に形成された第1の電極、前記第1の電極と対向する第2の電極、及び前記第1の電極と前記第2の電極との間に設けられた発光性の有機化合物を含む層とを備える発光素子と、
前記第2の電極上に形成された第2の接着剤層と、
前記第2の接着剤層上に設けられた金属基板と、
前記金属基板上に形成された放熱材料層と、を有するフレキシブル発光装置。 - 可撓性及び可視光に対する透光性を有する基板と、
前記基板上に設けられた第1の接着剤層と、
前記第1の接着剤層上に位置する絶縁層と、
前記絶縁層上に設けられたトランジスタと、
前記トランジスタを覆う層間絶縁層と、
前記層間絶縁層上に形成され、前記トランジスタのソース電極又はドレイン電極と電気的に接続する第1の電極、前記第1の電極と対向する第2の電極、及び前記第1の電極と前記第2の電極との間に設けられた発光性の有機化合物を含む層とを備える発光素子と、
前記第2の電極上に形成された第2の接着剤層と、
前記第2の接着剤層上に設けられた金属基板と、
前記金属基板上に形成された放熱材料層と、を有するフレキシブル発光装置。 - 請求項2において、
前記発光素子と前記トランジスタを含む画素部と、
前記画素部の外側に設けられ、トランジスタを含む駆動回路部を有し、
前記画素部のトランジスタと前記駆動回路部のトランジスタが同一工程により形成されるフレキシブル発光装置。 - 請求項2又は請求項3において、
前記トランジスタには、結晶質シリコンが用いられているフレキシブル発光装置。 - 請求項2又は請求項3において、
前記トランジスタには、酸化物半導体が用いられているフレキシブル発光装置。 - 請求項1乃至請求項5のいずれか一項において、
前記放熱材料層の熱放射率が、前記金属基板の熱放射率よりも高いフレキシブル発光装置。 - 請求項1乃至請求項6のいずれか一項において、
前記放熱材料層の熱放射率が、0.90以上であるフレキシブル発光装置。 - 請求項1乃至請求項7のいずれか一項において、
前記発光素子の前記第2の電極と前記第2の接着剤層との間に膜封止層を形成するフレキシブル発光装置。 - 請求項1乃至請求項8のいずれか一項において、
前記金属基板はステンレス、アルミニウム、銅、ニッケル、アルミニウム合金から選ばれる材料によりなるフレキシブル発光装置。 - 請求項1乃至請求項9のいずれか一項において、
前記第1の接着剤層は、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、フェノール樹脂から選ばれる一種若しくは複数種の材料によりなるフレキシブル発光装置。 - 請求項1乃至請求項10のいずれか一項において、
前記第1の接着剤層に、熱伝導性を有するフィラーを含むフレキシブル発光装置。 - 請求項11において、
前記熱伝導性を有するフィラーは、前記第1の接着剤層に用いる他の材料に比べ、熱伝導率が高いフレキシブル発光装置。 - 請求項1乃至請求項12のいずれか一項において、
前記第2の接着剤層は、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、フェノール樹脂から選ばれる一種若しくは複数種の材料によりなるフレキシブル発光装置。 - 請求項1乃至請求項13のいずれか一項において、
前記第2の接着剤層に、熱伝導性を有するフィラーを含むフレキシブル発光装置。 - 請求項14において、
前記熱伝導性を有するフィラーは、前記第2の接着剤層に用いる他の材料に比べ、熱伝導率が高いフレキシブル発光装置。 - 請求項1乃至請求項15のいずれか一項において、
前記金属基板と前記放熱材料層との間に樹脂層が設けられているフレキシブル発光装置。 - 請求項16において、
前記樹脂層は、エポキシ樹脂、アクリル樹脂、シリコーン樹脂、フェノール樹脂、若しくはポリエステル樹脂から選ばれる一種または複数種からなる熱硬化性樹脂、又はポリプロピレン、ポリエチレン、ポリカーボネート、ポリスチレン、ポリアミド、ポリエーテルケトン、フッ素樹脂、若しくはポリエチレンナフタレートから選ばれる一種または複数種からなる熱可塑性樹脂を含むフレキシブル発光装置。 - 請求項1乃至請求項17のいずれか一項において、
前記可撓性及び可視光に対する透光性を有する基板、前記第1の接着剤層、前記第2の接着剤層及び前記樹脂層の少なくとも一にさらに繊維体が含まれているフレキシブル発光装置。 - 請求項18において、
前記繊維体は、ガラス繊維であるフレキシブル発光装置。 - 請求項1乃至請求項19のいずれか一項において、
前記可撓性及び可視光に対する透光性を有する基板と前記第1の接着剤層との間に、防水層が形成されているフレキシブル発光装置。 - 請求項20において、
前記防水層は珪素及び窒素を含む層またはアルミニウム及び窒素を含む層、であるフレキシブル発光装置。 - 請求項1乃至請求項21のいずれか一項において、
前記可撓性及び可視光に対する透光性を有する基板における前記金属基板と対向する面と反対の面にコート層を有するフレキシブル発光装置。 - 請求項22において、
前記コート層は、可視光に対する透光性を有し、高硬度の層であるフレキシブル発光装置。 - 請求項22において、
前記コート層は、可視光に対する透光性を有する導電層であるフレキシブル発光装置。 - 請求項1乃至請求項24のいずれか一項において、
前記絶縁層は、窒素及び珪素を含む層からなるフレキシブル発光装置。 - 請求項1乃至請求項25のいずれか一に記載のフレキシブル発光装置を表示部に用いる電子機器。
- 請求項1乃至請求項25のいずれか一に記載のフレキシブル発光装置を用いる照明装置。
- 作製基板上に剥離層を形成し、
前記剥離層上に絶縁層を形成し、
前記絶縁層上に第1の電極を形成し、
前記第1の電極上に前記第1の電極の端部を覆って隔壁を形成し、
前記第1の電極及び前記隔壁上に仮支持基板を接着し、
前記絶縁層、前記第1の電極、隔壁、及び前記仮支持基板を、前記剥離層と前記絶縁層との間で剥離することによって前記作製基板から分離し、
前記分離によって露出した前記絶縁層の表面に第1の接着剤層を用いて可撓性及び可視光に対する透光性を有する基板を接着し、
前記仮支持基板を除去して、前記第1の電極の表面を露出させ、
露出した前記第1の電極を覆って発光性の有機化合物を含む層を形成し、
前記発光性の有機化合物を含む層を覆って第2の電極を形成し、
前記第2の電極の表面に第2の接着剤層を用いて金属基板を接着し、
前記金属基板上に放熱材料層を形成するフレキシブル発光装置の作製方法。 - 作製基板上に剥離層を形成し、
前記剥離層上に絶縁層を形成し、
前記絶縁層上に複数のトランジスタを形成し、
前記トランジスタ上に、層間絶縁層を形成し、
前記層間絶縁層上に、前記トランジスタのソース電極又はドレイン電極と電気的に接続する第1の電極を形成し、
前記第1の電極の端部を覆って隔壁を形成し、
前記第1の電極及び前記隔壁上に仮支持基板を接着し、
前記絶縁層、前記トランジスタ、前記層間絶縁層、前記第1の電極、前記隔壁、及び前記仮支持基板を、前記剥離層と前記絶縁層との間で剥離することによって前記作製基板から分離し、
前記分離によって露出した前記絶縁層の表面に、第1の接着剤層を用いて可撓性及び可視光に対する透光性を有する基板を接着し、
前記仮支持基板を除去して、前記第1の電極の表面を露出させ、
露出した前記第1の電極を覆って発光性の有機化合物を含む層を形成し、
前記発光性の有機化合物を含む層を覆って第2の電極を形成し、
前記第2の電極の表面に第2の接着剤層を用いて金属基板を接着し、
前記金属基板上に放熱材料層を形成するフレキシブル発光装置の作製方法。 - 請求項28又は請求項29において、
前記金属基板と前記放熱材料層との間に、樹脂層を形成するフレキシブル発光装置の作製方法。 - 請求項28乃至請求項30のいずれか一項において、
前記第2の電極と前記第2の接着剤層との間に膜封止層を形成するフレキシブル発光装置の作製方法。 - 請求項28乃至請求項31のいずれか一項において、
前記絶縁層は、プラズマCVD法によって250℃以上400℃以下の温度条件で成膜するフレキシブル発光装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011008073A JP2011171288A (ja) | 2010-01-20 | 2011-01-18 | フレキシブル発光装置、電子機器、照明装置、及びフレキシブル発光装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010010421 | 2010-01-20 | ||
JP2010010421 | 2010-01-20 | ||
JP2011008073A JP2011171288A (ja) | 2010-01-20 | 2011-01-18 | フレキシブル発光装置、電子機器、照明装置、及びフレキシブル発光装置の作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011171288A true JP2011171288A (ja) | 2011-09-01 |
JP2011171288A5 JP2011171288A5 (ja) | 2014-02-13 |
Family
ID=44276929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011008073A Withdrawn JP2011171288A (ja) | 2010-01-20 | 2011-01-18 | フレキシブル発光装置、電子機器、照明装置、及びフレキシブル発光装置の作製方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9000443B2 (ja) |
JP (1) | JP2011171288A (ja) |
CN (1) | CN102169964B (ja) |
TW (1) | TWI589042B (ja) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013069480A (ja) * | 2011-09-21 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | 発光装置、電子機器、及び照明装置 |
KR20130117112A (ko) * | 2012-04-17 | 2013-10-25 | 엘지디스플레이 주식회사 | 유기발광 디스플레이 장치의 제조방법 |
JP2013224977A (ja) * | 2012-04-19 | 2013-10-31 | Toshiba Corp | 表示パネル及び表示装置 |
WO2014141330A1 (ja) * | 2013-03-13 | 2014-09-18 | パナソニック株式会社 | 電子デバイス |
JP2014222617A (ja) * | 2013-05-14 | 2014-11-27 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
JP2014532271A (ja) * | 2011-10-11 | 2014-12-04 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 有機エレクトロニクスデバイスの封止部、有機エレクトロニクスデバイス、および有機エレクトロニクスデバイスを製造する方法 |
KR20150071287A (ko) * | 2013-12-18 | 2015-06-26 | 엘지디스플레이 주식회사 | 금속 필름을 이용한 면 봉지 방식의 유기발광 다이오드 표시장치 |
JP2016027553A (ja) * | 2014-05-30 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
JP2016119291A (ja) * | 2014-10-17 | 2016-06-30 | 株式会社半導体エネルギー研究所 | 発光装置、モジュール、電子機器、及び発光装置の作製方法 |
JP2017504500A (ja) * | 2013-12-20 | 2017-02-09 | ポスコPosco | 放熱性に優れた金属封止材、その製造方法、及び上記金属封止材で封止された柔軟電子素子 |
KR20170102220A (ko) * | 2014-12-29 | 2017-09-08 | 택토텍 오와이 | 전자 소자를 수용하기 위한 다층 구조체 및 이의 제조방법 |
JP2018006351A (ja) * | 2017-09-11 | 2018-01-11 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP2018018826A (ja) * | 2012-05-09 | 2018-02-01 | 株式会社半導体エネルギー研究所 | 発光装置 |
JPWO2017010329A1 (ja) * | 2015-07-10 | 2018-03-01 | シャープ株式会社 | エレクトロルミネッセンス装置 |
KR20190077878A (ko) * | 2017-12-26 | 2019-07-04 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
US10541372B2 (en) | 2011-12-23 | 2020-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
KR20210027321A (ko) * | 2012-12-14 | 2021-03-10 | 유니버셜 디스플레이 코포레이션 | 착용가능한 디스플레이 |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9000442B2 (en) * | 2010-01-20 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device |
JP5918509B2 (ja) * | 2011-11-15 | 2016-05-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
KR101990321B1 (ko) * | 2012-12-04 | 2019-06-18 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
US9012900B2 (en) * | 2012-12-26 | 2015-04-21 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
KR102309244B1 (ko) | 2013-02-20 | 2021-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102092842B1 (ko) * | 2013-08-07 | 2020-04-16 | 삼성디스플레이 주식회사 | 표시 패널 및 이의 제조 방법 |
JP2015050011A (ja) * | 2013-08-30 | 2015-03-16 | 株式会社ジャパンディスプレイ | エレクトロルミネセンス装置およびその製造方法 |
JP6394171B2 (ja) | 2013-10-30 | 2018-09-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
US9130195B2 (en) * | 2013-11-22 | 2015-09-08 | Universal Display Corporation | Structure to enhance light extraction and lifetime of OLED devices |
KR102215364B1 (ko) | 2013-12-02 | 2021-02-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제조방법 |
KR102132697B1 (ko) | 2013-12-05 | 2020-07-10 | 엘지디스플레이 주식회사 | 휘어진 디스플레이 장치 |
US10032753B2 (en) * | 2014-06-20 | 2018-07-24 | Grote Industries, Llc | Flexible lighting device having both visible and infrared light-emitting diodes |
TWI695525B (zh) | 2014-07-25 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 剝離方法、發光裝置、模組以及電子裝置 |
CN104167429B (zh) * | 2014-08-01 | 2017-05-31 | 京东方科技集团股份有限公司 | 一种柔性显示面板及其制备方法、显示装置 |
CN104465636A (zh) * | 2014-11-12 | 2015-03-25 | 谢颃星 | 一种新型半导体封装体 |
CN104867961B (zh) * | 2015-04-24 | 2020-06-30 | 京东方科技集团股份有限公司 | 阵列基板、其制造方法及显示装置 |
KR102469186B1 (ko) * | 2015-04-30 | 2022-11-21 | 삼성디스플레이 주식회사 | 플렉서블 유기 발광 표시 장치 및 플렉서블 유기 발광 표시 장치의 제조 방법 |
KR102288354B1 (ko) * | 2015-08-10 | 2021-08-11 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치의 제조 방법 |
KR102412612B1 (ko) * | 2015-08-28 | 2022-06-23 | 삼성전자주식회사 | 패키지 기판 및 프리프레그 |
EP3370938B1 (en) * | 2015-11-06 | 2020-05-27 | Tactotek Oy | Multilayer structure and related method of manufacturing |
JP6563796B2 (ja) * | 2015-12-03 | 2019-08-21 | 双葉電子工業株式会社 | 封止構造、有機el表示装置、及びセンサ |
KR102435399B1 (ko) * | 2015-12-24 | 2022-08-25 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
JP2017152252A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ジャパンディスプレイ | 表示装置 |
CN105575979A (zh) * | 2016-03-07 | 2016-05-11 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板和显示装置 |
DE102016105198A1 (de) * | 2016-03-21 | 2017-09-21 | Osram Oled Gmbh | Organisches optoelektronisches Bauelement |
US10586817B2 (en) | 2016-03-24 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and separation apparatus |
CN105932167A (zh) * | 2016-05-05 | 2016-09-07 | 豪威半导体(上海)有限责任公司 | 投影显示器及其制造方法 |
TWI792916B (zh) | 2016-06-24 | 2023-02-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置、電子裝置 |
CN106129088B (zh) * | 2016-07-21 | 2018-11-23 | 京东方科技集团股份有限公司 | 一种显示面板及制备方法、显示装置 |
WO2018020333A1 (en) | 2016-07-29 | 2018-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
TWI730017B (zh) | 2016-08-09 | 2021-06-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置 |
TW201808628A (zh) | 2016-08-09 | 2018-03-16 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
CN108123053A (zh) * | 2016-11-29 | 2018-06-05 | 京东方科技集团股份有限公司 | 发光器件和显示装置 |
US10825839B2 (en) * | 2016-12-02 | 2020-11-03 | Innolux Corporation | Touch display device |
KR102643635B1 (ko) * | 2016-12-06 | 2024-03-06 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN106652877B (zh) * | 2017-02-09 | 2020-02-14 | 京东方科技集团股份有限公司 | 显示面板和显示装置 |
CN106992262A (zh) * | 2017-03-20 | 2017-07-28 | 上海天马有机发光显示技术有限公司 | 一种显示装置 |
CN107195666A (zh) | 2017-06-26 | 2017-09-22 | 京东方科技集团股份有限公司 | 一种有机电致发光显示面板、其制作方法及显示装置 |
KR102398555B1 (ko) * | 2017-09-29 | 2022-05-17 | 엘지디스플레이 주식회사 | 열전도율이 높은 봉지 기판을 포함하는 유기 발광 표시 장치 |
KR102437327B1 (ko) * | 2017-12-27 | 2022-08-29 | 엘지디스플레이 주식회사 | 표시장치 |
CN108470848B (zh) * | 2018-04-17 | 2019-10-15 | 京东方科技集团股份有限公司 | 一种oled发光器件及其制备方法、显示装置 |
KR102605887B1 (ko) * | 2018-05-08 | 2023-11-23 | 엘지디스플레이 주식회사 | 발광 표시 장치 |
CN109272869B (zh) * | 2018-09-30 | 2021-02-12 | 云谷(固安)科技有限公司 | 显示面板及显示装置 |
CN111244293B (zh) * | 2018-11-28 | 2021-10-22 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
CN109656059B (zh) * | 2019-02-26 | 2021-08-27 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及其驱动方法 |
CN110021714A (zh) * | 2019-04-15 | 2019-07-16 | 湖畔光电科技(江苏)有限公司 | 一种oled微型显示器用透明阴极的生产工艺 |
CN110112315B (zh) * | 2019-05-22 | 2021-03-23 | 京东方科技集团股份有限公司 | 一种柔性背板、柔性背板的制备方法以及显示面板 |
CN111564465A (zh) * | 2020-05-19 | 2020-08-21 | 深超光电(深圳)有限公司 | 显示面板的制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2005101025A (ja) * | 2003-09-22 | 2005-04-14 | Denki Kagaku Kogyo Kk | 放熱シート |
JP2006331695A (ja) * | 2005-05-23 | 2006-12-07 | Matsushita Electric Works Ltd | 有機発光素子用封止部材及び有機発光素子 |
JP2008013721A (ja) * | 2006-07-10 | 2008-01-24 | Kyocera Chemical Corp | 硬化性樹脂組成物、表示素子用接着剤及び接着方法 |
JP2009218117A (ja) * | 2008-03-11 | 2009-09-24 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンスパネル |
JP2009245770A (ja) * | 2008-03-31 | 2009-10-22 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2010004000A (ja) * | 2008-06-18 | 2010-01-07 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ及びその製造方法、ならびに薄膜トランジスタを備えた平板表示装置 |
Family Cites Families (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6356625A (ja) | 1986-08-27 | 1988-03-11 | Canon Inc | 液晶装置 |
JPS63314522A (ja) | 1987-06-17 | 1988-12-22 | Nec Corp | カラ−液晶ディスプレイ |
JP2742057B2 (ja) * | 1988-07-14 | 1998-04-22 | シャープ株式会社 | 薄膜elパネル |
US5189405A (en) * | 1989-01-26 | 1993-02-23 | Sharp Kabushiki Kaisha | Thin film electroluminescent panel |
JPH0329291A (ja) * | 1989-06-27 | 1991-02-07 | Sumitomo Bakelite Co Ltd | 有機分散型elランプ用捕水フィルム |
JP3293736B2 (ja) * | 1996-02-28 | 2002-06-17 | キヤノン株式会社 | 半導体基板の作製方法および貼り合わせ基体 |
US5473511A (en) * | 1994-05-05 | 1995-12-05 | Ford Motor Company | Printed circuit board with high heat dissipation |
US5771562A (en) * | 1995-05-02 | 1998-06-30 | Motorola, Inc. | Passivation of organic devices |
JP2914242B2 (ja) * | 1995-09-18 | 1999-06-28 | 日本電気株式会社 | マルチチップモジュール及びその製造方法 |
TWI228625B (en) * | 1995-11-17 | 2005-03-01 | Semiconductor Energy Lab | Display device |
US5811177A (en) * | 1995-11-30 | 1998-09-22 | Motorola, Inc. | Passivation of electroluminescent organic devices |
US5686360A (en) * | 1995-11-30 | 1997-11-11 | Motorola | Passivation of organic devices |
TW309633B (ja) * | 1995-12-14 | 1997-07-01 | Handotai Energy Kenkyusho Kk | |
US5693956A (en) * | 1996-07-29 | 1997-12-02 | Motorola | Inverted oleds on hard plastic substrate |
CN1143394C (zh) * | 1996-08-27 | 2004-03-24 | 精工爱普生株式会社 | 剥离方法、溥膜器件的转移方法和薄膜器件 |
JPH1090705A (ja) | 1996-09-11 | 1998-04-10 | Matsushita Electric Ind Co Ltd | 液晶表示モジュールの搬送方法と液晶表示モジュール |
US5952778A (en) * | 1997-03-18 | 1999-09-14 | International Business Machines Corporation | Encapsulated organic light emitting device |
JP3290375B2 (ja) * | 1997-05-12 | 2002-06-10 | 松下電器産業株式会社 | 有機電界発光素子 |
JPH1126733A (ja) | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
US6198220B1 (en) * | 1997-07-11 | 2001-03-06 | Emagin Corporation | Sealing structure for organic light emitting devices |
KR100249784B1 (ko) * | 1997-11-20 | 2000-04-01 | 정선종 | 고분자복합막을이용한유기물혹은고분자전기발광소자의패키징방법 |
US6146225A (en) * | 1998-07-30 | 2000-11-14 | Agilent Technologies, Inc. | Transparent, flexible permeability barrier for organic electroluminescent devices |
US6274887B1 (en) | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US6268695B1 (en) | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
EP1041624A1 (en) | 1999-04-02 | 2000-10-04 | Interuniversitair Microelektronica Centrum Vzw | Method of transferring ultra-thin substrates and application of the method to the manufacture of a multilayer thin film device |
JP3942770B2 (ja) * | 1999-09-22 | 2007-07-11 | 株式会社半導体エネルギー研究所 | El表示装置及び電子装置 |
US6413645B1 (en) * | 2000-04-20 | 2002-07-02 | Battelle Memorial Institute | Ultrabarrier substrates |
TWM244584U (en) * | 2000-01-17 | 2004-09-21 | Semiconductor Energy Lab | Display system and electrical appliance |
US6492026B1 (en) | 2000-04-20 | 2002-12-10 | Battelle Memorial Institute | Smoothing and barrier layers on high Tg substrates |
GB2365078B (en) * | 2000-07-27 | 2004-04-21 | Rolls Royce Plc | A gas turbine engine blade |
US7178927B2 (en) | 2000-11-14 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescent device having drying agent |
US6724150B2 (en) * | 2001-02-01 | 2004-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
TW548860B (en) * | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP2003109773A (ja) * | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
TW594947B (en) | 2001-10-30 | 2004-06-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US7072115B2 (en) * | 2002-03-26 | 2006-07-04 | Keiwa Inc. | Light diffusion sheet and backlight unit using the same |
JP2004119016A (ja) | 2002-09-20 | 2004-04-15 | Semiconductor Energy Lab Co Ltd | 発光装置 |
WO2004057920A1 (ja) | 2002-12-19 | 2004-07-08 | Semiconductor Energy Laboratory Co., Ltd. | 表示装置及び表示装置の作製方法 |
WO2004077386A1 (ja) | 2003-02-28 | 2004-09-10 | Semiconductor Energy Laboratory Co., Ltd. | 表示装置、折り畳み型携帯端末 |
JP4820536B2 (ja) * | 2003-06-25 | 2011-11-24 | 彬雄 谷口 | 有機エレクトロルミネッセンス素子の製造方法 |
US20060145603A1 (en) * | 2003-06-25 | 2006-07-06 | Yoshio Taniguchi | Organic electroluminescence element, process for fabricating the same and electrode film |
SG142140A1 (en) | 2003-06-27 | 2008-05-28 | Semiconductor Energy Lab | Display device and method of manufacturing thereof |
US7928654B2 (en) * | 2003-08-29 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
JP4741177B2 (ja) | 2003-08-29 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
US7229900B2 (en) | 2003-10-28 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing thereof, and method of manufacturing base material |
US20070222370A1 (en) | 2003-12-30 | 2007-09-27 | Agency For Science, Technology And Research | Flexible Electroluminescent Devices |
US7619258B2 (en) | 2004-03-16 | 2009-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP2005303262A (ja) * | 2004-03-18 | 2005-10-27 | Sharp Corp | アクティブマトリクス基板、その製造装置、及び表示デバイス |
JP4913605B2 (ja) * | 2005-01-20 | 2012-04-11 | 株式会社アライドマテリアル | 半導体装置用部材の製造方法 |
US7566633B2 (en) | 2005-02-25 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP3850427B2 (ja) * | 2005-03-22 | 2006-11-29 | 株式会社物産ナノテク研究所 | 炭素繊維結合体およびこれを用いた複合材料 |
JP4974568B2 (ja) * | 2005-04-06 | 2012-07-11 | エルジー ディスプレイ カンパニー リミテッド | 電界発光表示装置 |
KR101424784B1 (ko) * | 2006-01-10 | 2014-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그의 제조방법 |
US8900970B2 (en) | 2006-04-28 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device using a flexible substrate |
CN101501556A (zh) * | 2006-06-22 | 2009-08-05 | 诺基亚公司 | 玻璃纤维增强塑料基材 |
JP5362948B2 (ja) | 2006-06-27 | 2013-12-11 | パナソニック株式会社 | 有機エレクトロルミネッセンス発光装置及び有機エレクトロルミネッセンス照明装置 |
CN101009362B (zh) | 2007-01-31 | 2010-11-24 | 清华大学 | 一种有机发光器件 |
US7977877B2 (en) * | 2007-03-02 | 2011-07-12 | Global Oled Technology Llc | Flat panel OLED device having deformable substrate |
KR101458899B1 (ko) * | 2007-03-28 | 2014-11-10 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US8058096B2 (en) * | 2007-07-31 | 2011-11-15 | Hewlett Packard Development Company, L.P. | Microelectronic device |
JP2009129681A (ja) * | 2007-11-22 | 2009-06-11 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス装置およびその製造方法 |
JP2010028105A (ja) * | 2008-06-20 | 2010-02-04 | Semiconductor Energy Lab Co Ltd | 記憶素子及び記憶素子の作製方法 |
KR20100028926A (ko) * | 2008-09-05 | 2010-03-15 | 삼성전자주식회사 | 표시장치 및 이의 제조방법 |
EP2178133B1 (en) * | 2008-10-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device |
US8766269B2 (en) * | 2009-07-02 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, lighting device, and electronic device |
US9000442B2 (en) * | 2010-01-20 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device |
-
2011
- 2011-01-12 TW TW100101096A patent/TWI589042B/zh not_active IP Right Cessation
- 2011-01-13 US US13/005,768 patent/US9000443B2/en not_active Expired - Fee Related
- 2011-01-18 JP JP2011008073A patent/JP2011171288A/ja not_active Withdrawn
- 2011-01-19 CN CN201110030955.8A patent/CN102169964B/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2005101025A (ja) * | 2003-09-22 | 2005-04-14 | Denki Kagaku Kogyo Kk | 放熱シート |
JP2006331695A (ja) * | 2005-05-23 | 2006-12-07 | Matsushita Electric Works Ltd | 有機発光素子用封止部材及び有機発光素子 |
JP2008013721A (ja) * | 2006-07-10 | 2008-01-24 | Kyocera Chemical Corp | 硬化性樹脂組成物、表示素子用接着剤及び接着方法 |
JP2009218117A (ja) * | 2008-03-11 | 2009-09-24 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンスパネル |
JP2009245770A (ja) * | 2008-03-31 | 2009-10-22 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2010004000A (ja) * | 2008-06-18 | 2010-01-07 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ及びその製造方法、ならびに薄膜トランジスタを備えた平板表示装置 |
Cited By (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013069480A (ja) * | 2011-09-21 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | 発光装置、電子機器、及び照明装置 |
US9601721B2 (en) | 2011-10-11 | 2017-03-21 | Osram Oled Gmbh | Encapsulation for an organic electronic device |
JP2014532271A (ja) * | 2011-10-11 | 2014-12-04 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 有機エレクトロニクスデバイスの封止部、有機エレクトロニクスデバイス、および有機エレクトロニクスデバイスを製造する方法 |
US10541372B2 (en) | 2011-12-23 | 2020-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
KR101872963B1 (ko) | 2012-04-17 | 2018-06-29 | 엘지디스플레이 주식회사 | 유기발광 디스플레이 장치의 제조방법 |
KR20130117112A (ko) * | 2012-04-17 | 2013-10-25 | 엘지디스플레이 주식회사 | 유기발광 디스플레이 장치의 제조방법 |
JP2013224977A (ja) * | 2012-04-19 | 2013-10-31 | Toshiba Corp | 表示パネル及び表示装置 |
US9184408B2 (en) | 2012-04-19 | 2015-11-10 | Kabushiki Kaisha Toshiba | Display panel and display device |
US10381599B2 (en) | 2012-05-09 | 2019-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device |
US11839106B2 (en) | 2012-05-09 | 2023-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device |
US11621407B2 (en) | 2012-05-09 | 2023-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having first to third supports |
US10903453B2 (en) | 2012-05-09 | 2021-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device |
JP2018018826A (ja) * | 2012-05-09 | 2018-02-01 | 株式会社半導体エネルギー研究所 | 発光装置 |
KR20210027321A (ko) * | 2012-12-14 | 2021-03-10 | 유니버셜 디스플레이 코포레이션 | 착용가능한 디스플레이 |
KR102360535B1 (ko) | 2012-12-14 | 2022-02-09 | 유니버셜 디스플레이 코포레이션 | 착용가능한 디스플레이 |
US9614186B2 (en) | 2013-03-13 | 2017-04-04 | Panasonic Corporation | Electronic device |
JPWO2014141330A1 (ja) * | 2013-03-13 | 2017-02-16 | パナソニック株式会社 | 電子デバイス |
WO2014141330A1 (ja) * | 2013-03-13 | 2014-09-18 | パナソニック株式会社 | 電子デバイス |
JP2014222617A (ja) * | 2013-05-14 | 2014-11-27 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
KR20150071287A (ko) * | 2013-12-18 | 2015-06-26 | 엘지디스플레이 주식회사 | 금속 필름을 이용한 면 봉지 방식의 유기발광 다이오드 표시장치 |
KR102167133B1 (ko) | 2013-12-18 | 2020-10-16 | 엘지디스플레이 주식회사 | 금속 필름을 이용한 면 봉지 방식의 유기발광 다이오드 표시장치 |
JP2017504500A (ja) * | 2013-12-20 | 2017-02-09 | ポスコPosco | 放熱性に優れた金属封止材、その製造方法、及び上記金属封止材で封止された柔軟電子素子 |
US10044003B2 (en) | 2013-12-20 | 2018-08-07 | Posco | Metal encapsulant having good heat dissipation properties, method of manufacturing same, and flexible electronic device encapsulated in said metal encapsulant |
JP2020184081A (ja) * | 2014-05-30 | 2020-11-12 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
JP2016027553A (ja) * | 2014-05-30 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
JP2022033879A (ja) * | 2014-05-30 | 2022-03-02 | 株式会社半導体エネルギー研究所 | 発光装置、電子機器 |
US10270057B2 (en) | 2014-10-17 | 2019-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, electronic device, and method for manufacturing light-emitting device |
US10629843B2 (en) | 2014-10-17 | 2020-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, electronic device, and method for manufacturing light-emitting device |
CN111710794A (zh) * | 2014-10-17 | 2020-09-25 | 株式会社半导体能源研究所 | 发光装置、模块、电子设备以及发光装置的制造方法 |
JP2016119291A (ja) * | 2014-10-17 | 2016-06-30 | 株式会社半導体エネルギー研究所 | 発光装置、モジュール、電子機器、及び発光装置の作製方法 |
JP2019125589A (ja) * | 2014-10-17 | 2019-07-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
US11189817B2 (en) | 2014-10-17 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, electronic device, and method for manufacturing light-emitting device |
US11778850B2 (en) | 2014-10-17 | 2023-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, electronic device, and method for manufacturing light-emitting device |
KR102616605B1 (ko) | 2014-12-29 | 2023-12-20 | 택토텍 오와이 | 전자 소자를 수용하기 위한 다층 구조체 및 이의 제조방법 |
KR20170102220A (ko) * | 2014-12-29 | 2017-09-08 | 택토텍 오와이 | 전자 소자를 수용하기 위한 다층 구조체 및 이의 제조방법 |
JPWO2017010329A1 (ja) * | 2015-07-10 | 2018-03-01 | シャープ株式会社 | エレクトロルミネッセンス装置 |
US10510989B2 (en) | 2015-07-10 | 2019-12-17 | Sharp Kabushiki Kaisha | Electroluminescent device |
JP2018006351A (ja) * | 2017-09-11 | 2018-01-11 | 株式会社半導体エネルギー研究所 | 発光装置 |
CN110010655B (zh) * | 2017-12-26 | 2023-09-01 | 乐金显示有限公司 | 显示装置 |
KR102505255B1 (ko) * | 2017-12-26 | 2023-02-28 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
KR20190077878A (ko) * | 2017-12-26 | 2019-07-04 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
CN110010655A (zh) * | 2017-12-26 | 2019-07-12 | 乐金显示有限公司 | 显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20110175102A1 (en) | 2011-07-21 |
US9000443B2 (en) | 2015-04-07 |
TW201214818A (en) | 2012-04-01 |
CN102169964A (zh) | 2011-08-31 |
CN102169964B (zh) | 2016-01-20 |
TWI589042B (zh) | 2017-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6517301B2 (ja) | 表示装置 | |
JP6077059B2 (ja) | 発光装置、電子機器 | |
TWI589042B (zh) | 發光裝置,撓性發光裝置,電子裝置,照明設備,以及發光裝置和撓性發光裝置的製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131225 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131225 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141017 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141028 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141110 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150224 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150421 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20150629 |