CN105575979A - 阵列基板及其制备方法、显示面板和显示装置 - Google Patents
阵列基板及其制备方法、显示面板和显示装置 Download PDFInfo
- Publication number
- CN105575979A CN105575979A CN201610127882.7A CN201610127882A CN105575979A CN 105575979 A CN105575979 A CN 105575979A CN 201610127882 A CN201610127882 A CN 201610127882A CN 105575979 A CN105575979 A CN 105575979A
- Authority
- CN
- China
- Prior art keywords
- organic material
- layer
- material layer
- heat
- underlay substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000011368 organic material Substances 0.000 claims abstract description 126
- 238000002161 passivation Methods 0.000 claims abstract description 37
- 238000009413 insulation Methods 0.000 claims description 37
- 239000004033 plastic Substances 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 14
- 239000000470 constituent Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 239000012212 insulator Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 18
- 230000002411 adverse Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
- G02F1/133311—Environmental protection, e.g. against dust or humidity
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明公开了一种阵列基板及其制备方法、显示面板和显示装置,所述阵列基板在有机材料层的表面设置导热层,所述导热层起到传导热量的作用,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本发明提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种阵列基板及其制备方法、显示面板和显示装置。
背景技术
现有的显示面板为了降低功耗,在显示基板的栅绝缘层与钝化层之间设置有机材料层。这种具有有机材料层的显示产品在高温高湿高压之中进行测试时,水汽容易从显示面板的边缘进入显示区域形成气泡,从而导致显示产品无法通过信赖性测试。具体来说,在高温高湿环境之中,有机膜材料受热容易膨胀,有机膜材料的膨胀导致有机材料层与栅绝缘层、钝化层之间的结着性变差,从而使得有机材料层与栅绝缘层、钝化层之间产生间隙,水汽通过间隙进入显示面板的显示区域形成气泡。
发明内容
为解决上述问题,本发明提供一种阵列基板及其制备方法、显示面板和显示装置,用于解决现有技术中有机材料层的膨胀导致显示面板出现间隙,从而形成气泡的问题。
为此,本发明提供一种阵列基板,包括衬底基板,所述衬底基板包括显示区域和封框胶涂布区域,所述衬底基板上设置有薄膜晶体管和有机材料层,所述有机材料层设置在所述显示区域和封框胶涂布区域,位于封框胶涂布区域的有机材料层远离所述衬底基板的第一表面和/或靠近所述衬底基板的第二表面设置有导热层。
可选的,所述导热层的构成材料包括金属材料。
可选的,所述导热层的构成材料包括金、银、铜、铝、钛、铬、钼、镉、镍以及钴之中的一种或多种。
可选的,当所述导热层位于所述第二表面时,所述导热层与数据线间隔设置。
本发明还提供一种显示面板,包括上述任一所述的阵列基板。
本发明还提供一种显示装置,包括上述任一所述的阵列基板。
本发明还提供一种阵列基板的制备方法,包括:
在衬底基板上形成薄膜晶体管,所述衬底基板包括显示区域和封框胶涂布区域;
在所述显示区域和所述封框胶涂布区域的上方形成有机材料层;
在位于封框胶涂布区域的有机材料层远离所述衬底基板的第一表面和/或靠近所述衬底基板的第二表面形成导热层。
可选的,所述导热层的构成材料包括金属材料。
可选的,所述在位于封框胶涂布区域的有机材料层远离所述衬底基板的第一表面形成导热层的步骤包括:
在所述第一表面形成金属薄膜;
在所述金属薄膜上涂敷光刻胶,采用掩膜板对所述光刻胶进行曝光显影以形成光刻胶保留区域和光刻胶去除区域,所述光刻胶保留区域对应于形成导热层的图形区域,所述光刻胶去除区域对应于形成导热层的图形区域之外的其它区域;
对所述金属薄膜进行刻蚀以形成导热层。
可选的,所述在衬底基板上形成薄膜晶体管的步骤包括:
在衬底基板上形成栅极;
在所述栅极的上方形成有源层;
在所述有源层上形成源极和漏极;
所述在所述栅极的上方形成有源层的步骤之前包括:
在所述栅极上形成栅绝缘层;
所述在所述栅极的上方形成有源层的步骤包括:
在所述栅绝缘层上形成有源层;
所述在所述显示区域和所述封框胶涂布区域的上方形成有机材料层的步骤包括:
在所述源极和所述漏极的上方形成有机材料层;
所述在所述源极和所述漏极的上方形成有机材料层的步骤之后包括:
在所述有机材料层的上方形成有钝化层。
本发明具有下述有益效果:
本发明提供的阵列基板及其制备方法、显示面板和显示装置之中,所述阵列基板在有机材料层的表面设置导热层,所述导热层起到传导热量的作用,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本发明提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
附图说明
图1为本发明实施例一提供的一种阵列基板的结构示意图;
图2为本发明实施例一提供的一种晶体管的结构示意图;
图3为本发明实施例二提供的一种阵列基板的结构示意图;
图4为本发明实施例三提供的一种阵列基板的结构示意图;
图5为本发明实施例四提供的一种显示面板的结构示意图;
图6为本发明实施例四提供的又一种显示面板的结构示意图;
图7为本发明实施例四提供的另一种显示面板的结构示意图;
图8为本发明实施例六提供的一种阵列基板的制备方法的流程图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案,下面结合附图对本发明提供的阵列基板及其制备方法、显示面板和显示装置进行详细描述。
实施例一
图1为本发明实施例一提供的一种阵列基板的结构示意图。如图1所示,所述阵列基板包括衬底基板101,所述衬底基板101包括显示区域和封框胶涂布区域,所述衬底基板101上设置有薄膜晶体管和有机材料层104,所述有机材料层104设置在所述显示区域和封框胶涂布区域,位于封框胶涂布区域的有机材料层104远离所述衬底基板101的第一表面设置有导热层105。可选的,所述有机材料层104的上方设置有钝化层106。所述导热层105用于传导热量,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本实施例提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
本实施例中,所述有机材料层104的构成材料包括纤维素衍生物材料、聚砜材料、聚酰胺材料、聚酰亚胺材料、聚酯材料、聚稀烃材料、含硅聚合物材料以及含氟聚合物材料,所述导热层105的构成材料包括金属材料。优选的,所述导热层105的构成材料包括金、银、铜、铝、钛、铬、钼、镉、镍以及钴之中的一种或多种。可选的,所述导热层105为面状金属。本实施例提供的导热层105包括多个条状金属,从而可以节省材料,降低生产成本。
图2为本发明实施例一提供的一种晶体管的结构示意图。如图2所示,所述薄膜晶体管包括栅极301、有源层302、源极303和漏极304,所述栅极301设置在所述衬底基板101上,所述栅极301上设置有栅绝缘层102,所述有源层302设置在所述栅绝缘层102上,所述源极303和所述漏极304设置在所述有源层302上,所述有机材料层104设置在所述源极303和所述漏极304的上方,所述有机材料层104的上方设置有钝化层106。
本实施例提供的阵列基板在有机材料层的表面设置导热层,所述导热层起到传导热量的作用,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本实施例提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
实施例二
图3为本发明实施例二提供的一种阵列基板的结构示意图。如图3所示,所述阵列基板包括衬底基板101,所述衬底基板101包括显示区域和封框胶涂布区域,所述衬底基板101上设置有薄膜晶体管和有机材料层104,所述有机材料层104设置在所述显示区域和封框胶涂布区域,位于封框胶涂布区域的有机材料层104靠近所述衬底基板101的第二表面设置有导热层105。可选的,所述有机材料层104的上方设置有钝化层106。所述导热层105用于传导热量,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本实施例提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
本实施例中,所述导热层105包括多个条状金属,所述条状金属与数据线间隔设置,从而可以节省材料,降低生产成本。
本实施例中阵列基板的其他结构与实施例一中的相同,具体的,参见图2,所述薄膜晶体管包括栅极301、有源层302、源极303和漏极304,所述栅极301设置在所述衬底基板101上,所述栅极301上设置有栅绝缘层102,所述有源层302设置在所述栅绝缘层102上,所述源极303和所述漏极304设置在所述有源层302上,所述有机材料层104设置在所述源极303和所述漏极304的上方,所述有机材料层104的上方设置有钝化层106。
本实施例提供的阵列基板在有机材料层的表面设置导热层,所述导热层起到传导热量的作用,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本实施例提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
实施例三
图4为本发明实施例三提供的一种阵列基板的结构示意图。如图4所示,所述阵列基板包括衬底基板101,所述衬底基板101包括显示区域和封框胶涂布区域,所述衬底基板101上设置有薄膜晶体管和有机材料层104,所述有机材料层104设置在所述显示区域和封框胶涂布区域,位于封框胶涂布区域的有机材料层104远离所述衬底基板101的第一表面和靠近所述衬底基板101的第二表面设置有导热层105。可选的,所述有机材料层104的上方设置有钝化层106。所述导热层105用于传导热量,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本实施例提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
本实施例中,设置在所述第二表面的导热层105包括多个条状金属,所述条状金属与数据线间隔设置,从而可以节省材料,降低生产成本。本实施例在有机材料层104的上下表面都设置有导热层105,可以更加有效地传导热量,减小有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。
本实施例中阵列基板的其他结构与实施例一中的相同,具体的,参见图2,所述薄膜晶体管包括栅极301、有源层302、源极303和漏极304,所述栅极301设置在所述衬底基板101上,所述栅极301上设置有栅绝缘层102,所述有源层302设置在所述栅绝缘层102上,所述源极303和所述漏极304设置在所述有源层302上,所述有机材料层104设置在所述源极303和所述漏极304的上方,所述有机材料层104的上方设置有钝化层106。
本实施例提供的阵列基板在有机材料层的表面设置导热层,所述导热层起到传导热量的作用,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本实施例提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
实施例四
图5为本发明实施例四提供的一种显示面板的结构示意图,图6为本发明实施例四提供的又一种显示面板的结构示意图,图7为本发明实施例四提供的另一种显示面板的结构示意图。如图5-7所示,所述显示面板包括彩膜基板和实施例一至三提供的阵列基板,所述彩膜基板与所述阵列基板通过封框胶107固定连接。图5所示的显示面板包括实施例一提供的阵列基板,图6所示的显示面板包括实施例二提供的阵列基板,图7所示的显示面板包括实施例三提供的阵列基板。关于阵列基板的具体内容可参照实施例一至三的描述,此处不再赘述。
参见图5-7,所述彩膜基板包括衬底基板201,所述衬底基板201上设置有黑矩阵202,所述黑矩阵202上设置有上配向层203,钝化层106上设置有下配向层108,所述上配向层203与所述下配向层108之间设置有液晶层109。
本实施例提供的显示面板之中,所述阵列基板在有机材料层的表面设置导热层,所述导热层起到传导热量的作用,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本实施例提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
实施例五
本实施例提供一种显示装置,包括实施例一至三提供的陈列基板,具体内容可参照实施例一至三的描述,此处不再赘述。
本实施例提供的显示装置之中,所述阵列基板在有机材料层的表面设置导热层,所述导热层起到传导热量的作用,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本实施例提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
实施例六
图8为本发明实施例六提供的一种阵列基板的制备方法的流程图。如图8所示,所述阵列基板的制备方法包括:
步骤1001、在衬底基板上形成薄膜晶体管,所述衬底基板包括显示区域和封框胶涂布区域。
步骤1002、在所述显示区域和所述封框胶涂布区域的上方形成有机材料层。
步骤1003、在位于封框胶涂布区域的有机材料层远离所述衬底基板的第一表面和/或靠近所述衬底基板的第二表面形成导热层。
参见图1,在所述有机材料层104的第一表面形成导热层105,所述第一表面为所述有机材料层104远离所述衬底基板101的表面。优选的,所述导热层105的构成材料包括金属材料。更优选的,所述导热层105的构成材料包括金、银、铜、铝、钛、铬、钼、镉、镍以及钴之中的一种或多种。
可选的,所述在位于封框胶涂布区域的有机材料层远离所述衬底基板的第一表面形成导热层的步骤包括:在所述第一表面形成金属薄膜;在所述金属薄膜上涂敷光刻胶,采用掩膜板对所述光刻胶进行曝光显影以形成光刻胶保留区域和光刻胶去除区域,所述光刻胶保留区域对应于形成导热层的图形区域,所述光刻胶去除区域对应于形成导热层的图形区域之外的其它区域;对所述金属薄膜进行刻蚀以形成导热层。
本实施例中,在所述薄膜晶体管的上方形成有机材料薄膜,在所述有机材料层104的第一表面形成金属薄膜,在所述金属薄膜上涂敷光刻胶,采用半色调掩膜板对所述光刻胶进行曝光显影以形成光刻胶完全保留区域、光刻胶半保留区域和光刻胶完全去除区域,所述光刻胶完全保留区域对应于形成导热层的图形区域,所述光刻胶完全去除区域对应于形成有机材料层的图形区域,所述光刻胶半保留区域对应于形成导热层的图形区域和形成有机材料层的图形区域之外的其它区域,对所述有机材料薄膜和金属薄膜进行刻蚀以形成有机材料层104,通过灰化工艺去除半保留区域的光刻胶,对所述金属薄膜进行刻蚀以形成导热层105。利用半色调掩膜板通过一次构图工艺形成有机材料层104和导热层105,减少了工艺流程,提高了生产效率,降低了生产成本。
参见图2,在衬底基板101上形成栅极301,在所述栅极301上形成栅绝缘层102,在所述栅绝缘层102上形成有源层302,在所述有源层302上形成源极303和漏极304,在所述源极303和所述漏极304的上方形成有机材料层104,在所述有机材料层104的上方形成有钝化层106。
本实施例提供的阵列基板的制备方法之中,所述阵列基板在有机材料层的表面设置导热层,所述导热层起到传导热量的作用,减小了有机材料的受热膨胀程度,从而避免有机材料的膨胀影响有机材料层与栅绝缘层、钝化层之间的结着力,最终避免有机材料层与栅绝缘层、钝化层之间产生间隙。本实施例提供的技术方案可以避免出现膜层间隙,在高温高湿高压测试之中水汽不能通过间隙进入显示面板的显示区域,从而避免了显示区域出现气泡,提高了有机材料层耐高温高湿性能,最终提高了显示装置在恶劣环境之中的信赖性和使用寿命。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (10)
1.一种阵列基板,包括衬底基板,所述衬底基板包括显示区域和封框胶涂布区域,所述衬底基板上设置有薄膜晶体管和有机材料层,所述有机材料层设置在所述显示区域和封框胶涂布区域,其特征在于,位于封框胶涂布区域的有机材料层远离所述衬底基板的第一表面和/或靠近所述衬底基板的第二表面设置有导热层。
2.根据权利要求1所述的阵列基板,其特征在于,所述导热层的构成材料包括金属材料。
3.根据权利要求2所述的阵列基板,其特征在于,所述导热层的构成材料包括金、银、铜、铝、钛、铬、钼、镉、镍以及钴之中的一种或多种。
4.根据权利要求1所述的阵列基板,其特征在于,当所述导热层位于所述第二表面时,所述导热层与数据线间隔设置。
5.一种显示面板,其特征在于,包括权利要求1-4任一所述的阵列基板。
6.一种显示装置,其特征在于,包括权利要求1-4任一所述的阵列基板。
7.一种阵列基板的制备方法,其特征在于,包括:
在衬底基板上形成薄膜晶体管,所述衬底基板包括显示区域和封框胶涂布区域;
在所述显示区域和所述封框胶涂布区域的上方形成有机材料层;
在位于封框胶涂布区域的有机材料层远离所述衬底基板的第一表面和/或靠近所述衬底基板的第二表面形成导热层。
8.根据权利要求7所述的阵列基板的制备方法,其特征在于,所述导热层的构成材料包括金属材料。
9.根据权利要求8所述的阵列基板的制备方法,其特征在于,所述在位于封框胶涂布区域的有机材料层远离所述衬底基板的第一表面形成导热层的步骤包括:
在所述第一表面形成金属薄膜;
在所述金属薄膜上涂敷光刻胶,采用掩膜板对所述光刻胶进行曝光显影以形成光刻胶保留区域和光刻胶去除区域,所述光刻胶保留区域对应于形成导热层的图形区域,所述光刻胶去除区域对应于形成导热层的图形区域之外的其它区域;
对所述金属薄膜进行刻蚀以形成导热层。
10.根据权利要求7所述的阵列基板的制备方法,其特征在于,所述在衬底基板上形成薄膜晶体管的步骤包括:
在衬底基板上形成栅极;
在所述栅极的上方形成有源层;
在所述有源层上形成源极和漏极;
所述在所述栅极的上方形成有源层的步骤之前包括:
在所述栅极上形成栅绝缘层;
所述在所述栅极的上方形成有源层的步骤包括:
在所述栅绝缘层上形成有源层;
所述在所述显示区域和所述封框胶涂布区域的上方形成有机材料层的步骤包括:
在所述源极和所述漏极的上方形成有机材料层;
所述在所述源极和所述漏极的上方形成有机材料层的步骤之后包括:
在所述有机材料层的上方形成有钝化层。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610127882.7A CN105575979A (zh) | 2016-03-07 | 2016-03-07 | 阵列基板及其制备方法、显示面板和显示装置 |
PCT/CN2016/088070 WO2017152551A1 (zh) | 2016-03-07 | 2016-07-01 | 阵列基板及其制备方法、显示面板和显示装置 |
US15/515,140 US20180090376A1 (en) | 2016-03-07 | 2016-07-01 | Array substrate and method of manufacturing the same, display panel and display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610127882.7A CN105575979A (zh) | 2016-03-07 | 2016-03-07 | 阵列基板及其制备方法、显示面板和显示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105575979A true CN105575979A (zh) | 2016-05-11 |
Family
ID=55885930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610127882.7A Pending CN105575979A (zh) | 2016-03-07 | 2016-03-07 | 阵列基板及其制备方法、显示面板和显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20180090376A1 (zh) |
CN (1) | CN105575979A (zh) |
WO (1) | WO2017152551A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106773425A (zh) * | 2017-02-28 | 2017-05-31 | 厦门天马微电子有限公司 | 显示面板及显示装置 |
CN107154465A (zh) * | 2017-05-26 | 2017-09-12 | 深圳市华星光电技术有限公司 | Oled器件的封装组件及封装方法、显示装置 |
WO2017152551A1 (zh) * | 2016-03-07 | 2017-09-14 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板和显示装置 |
CN108666447A (zh) * | 2018-05-25 | 2018-10-16 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示器件 |
CN110010655A (zh) * | 2017-12-26 | 2019-07-12 | 乐金显示有限公司 | 显示装置 |
CN110208977A (zh) * | 2019-06-13 | 2019-09-06 | 京东方科技集团股份有限公司 | 一种显示装置及显示装置的制备方法 |
US12009371B2 (en) | 2019-06-13 | 2024-06-11 | Hefei Boe Joint Technology Co., Ltd. | Display device with transparent electric insulating heat conductive protective layer and production method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050112303A1 (en) * | 2003-11-25 | 2005-05-26 | Mu-Hyun Kim | Donor substrate for full-color organic electroluminescent display device, method of manufacturing the same, and full-color organic electroluminescent display device using donor substrate |
US20110175102A1 (en) * | 2010-01-20 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, flexible light-emitting device, electronic device, lighting apparatus, and method of manufacturing light-emitting device and flexible-light emitting device |
CN104868058A (zh) * | 2015-03-27 | 2015-08-26 | 上海天马微电子有限公司 | 一种显示面板、显示装置和显示面板母板 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4993135B2 (ja) * | 2008-07-08 | 2012-08-08 | 信越化学工業株式会社 | 熱伝導性シリコーン組成物 |
KR101646100B1 (ko) * | 2008-12-02 | 2016-08-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
US8917010B2 (en) * | 2012-02-02 | 2014-12-23 | Citizen Electronics Co., Ltd. | Lighting device including phosphor layer and light-transmitting layer that is arranged in contact with the phosphor layer to release static charge to substrate |
CN103474434B (zh) * | 2013-09-16 | 2015-12-09 | 京东方科技集团股份有限公司 | 阵列基板、制备方法以及显示装置 |
CN104867960B (zh) * | 2015-04-21 | 2019-06-04 | 京东方科技集团股份有限公司 | 显示面板及其封装方法、显示装置 |
CN105575979A (zh) * | 2016-03-07 | 2016-05-11 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板和显示装置 |
-
2016
- 2016-03-07 CN CN201610127882.7A patent/CN105575979A/zh active Pending
- 2016-07-01 US US15/515,140 patent/US20180090376A1/en not_active Abandoned
- 2016-07-01 WO PCT/CN2016/088070 patent/WO2017152551A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050112303A1 (en) * | 2003-11-25 | 2005-05-26 | Mu-Hyun Kim | Donor substrate for full-color organic electroluminescent display device, method of manufacturing the same, and full-color organic electroluminescent display device using donor substrate |
US20110175102A1 (en) * | 2010-01-20 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, flexible light-emitting device, electronic device, lighting apparatus, and method of manufacturing light-emitting device and flexible-light emitting device |
CN104868058A (zh) * | 2015-03-27 | 2015-08-26 | 上海天马微电子有限公司 | 一种显示面板、显示装置和显示面板母板 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017152551A1 (zh) * | 2016-03-07 | 2017-09-14 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板和显示装置 |
CN106773425A (zh) * | 2017-02-28 | 2017-05-31 | 厦门天马微电子有限公司 | 显示面板及显示装置 |
CN106773425B (zh) * | 2017-02-28 | 2019-09-24 | 厦门天马微电子有限公司 | 显示面板及显示装置 |
CN107154465A (zh) * | 2017-05-26 | 2017-09-12 | 深圳市华星光电技术有限公司 | Oled器件的封装组件及封装方法、显示装置 |
CN110010655A (zh) * | 2017-12-26 | 2019-07-12 | 乐金显示有限公司 | 显示装置 |
CN110010655B (zh) * | 2017-12-26 | 2023-09-01 | 乐金显示有限公司 | 显示装置 |
CN108666447A (zh) * | 2018-05-25 | 2018-10-16 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示器件 |
CN110208977A (zh) * | 2019-06-13 | 2019-09-06 | 京东方科技集团股份有限公司 | 一种显示装置及显示装置的制备方法 |
US12009371B2 (en) | 2019-06-13 | 2024-06-11 | Hefei Boe Joint Technology Co., Ltd. | Display device with transparent electric insulating heat conductive protective layer and production method thereof |
Also Published As
Publication number | Publication date |
---|---|
US20180090376A1 (en) | 2018-03-29 |
WO2017152551A1 (zh) | 2017-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105575979A (zh) | 阵列基板及其制备方法、显示面板和显示装置 | |
CN102156369B (zh) | 薄膜晶体管液晶显示阵列基板及其制造方法 | |
CN103151359B (zh) | 一种显示装置、阵列基板及其制作方法 | |
JP6227674B2 (ja) | 酸化物薄膜トランジスターアレイ基板、その製造方法及び表示パネル | |
CN105070727B (zh) | 一种薄膜晶体管阵列基板、其制作方法及显示装置 | |
CN102945846B (zh) | 阵列基板及其制造方法、显示装置 | |
CN102709241A (zh) | 一种薄膜晶体管阵列基板及制作方法和显示装置 | |
CN103715138A (zh) | 一种阵列基板及其制造方法、显示装置 | |
CN104091831A (zh) | 一种薄膜晶体管、阵列基板和显示装置 | |
CN103135304B (zh) | 阵列基板及其制造方法 | |
CN103474439B (zh) | 一种显示装置、阵列基板及其制作方法 | |
WO2020177516A1 (zh) | 阵列基板、显示面板及其制备方法 | |
CN103700663B (zh) | 一种阵列基板及其制作方法、显示装置 | |
CN104678671A (zh) | 显示基板及其制造方法和显示装置 | |
CN105810690A (zh) | 显示基板及其制造方法和显示装置 | |
CN102681277B (zh) | 阵列基板及其制造方法和液晶显示面板 | |
CN105068340A (zh) | 阵列基板、显示装置及其制作方法 | |
CN102790056B (zh) | 阵列基板及其制作方法、goa单元制作方法及显示装置 | |
CN104362152B (zh) | 一种阵列基板的制备方法 | |
CN102956551A (zh) | 阵列基板的制作方法、阵列基板及显示装置 | |
CN106783732B (zh) | 阵列基板的制备方法及显示面板的制备方法 | |
CN203277383U (zh) | 一种阵列基板及显示装置 | |
CN102751276A (zh) | 一种阵列基板的制造方法、阵列基板及显示装置 | |
CN104201178A (zh) | 阵列基板及其制备方法、显示装置 | |
CN203932068U (zh) | 一种薄膜晶体管、阵列基板和显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160511 |
|
RJ01 | Rejection of invention patent application after publication |