JP5025095B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5025095B2 JP5025095B2 JP2005124371A JP2005124371A JP5025095B2 JP 5025095 B2 JP5025095 B2 JP 5025095B2 JP 2005124371 A JP2005124371 A JP 2005124371A JP 2005124371 A JP2005124371 A JP 2005124371A JP 5025095 B2 JP5025095 B2 JP 5025095B2
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- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 2
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- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
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- Thin Film Transistor (AREA)
Description
102 下地膜
103 半導体層
104 ゲート絶縁膜
105 ゲート電極
105a 窒化タンタル
105b タングステン
106 第1層間絶縁膜
107 電極又は配線
108 電極又は配線
109 第2層間絶縁膜
110 導電性材料膜
111 レジスト
112 配線
120 チャネル形成領域
121 低濃度不純物領域
122 高濃度不純物領域
130 導電性材料膜
Claims (4)
- 薄膜トランジスタ上に層間絶縁膜を形成し、
前記層間絶縁膜上に導電膜を形成し、
前記層間絶縁膜及び前記導電膜にドライエッチングによりコンタクトホールを形成し、
前記導電膜上に導電粒子を含む液滴を吐出することによって、前記コンタクトホールを介して前記薄膜トランジスタに電気的に接続されるアンテナを形成し、
前記導電膜を酸化させることによって部分的に絶縁化することを特徴とする半導体装置の作製方法。 - 請求項1において、
前記導電粒子は、CuをAgでコートした粒子であることを特徴とする半導体装置の作製方法。 - 請求項1又は請求項2において、
前記層間絶縁膜は、ポリイミド、又はシロキサン系樹脂を用いて形成されることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一において、
前記導電膜は、Ti、又はTiの窒化物を用いて形成されることを特徴とする半導体装置の作製方法。
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US8188315B2 (en) | 2004-04-02 | 2012-05-29 | Samsung Mobile Display Co., Ltd. | Organic light emitting device and flat panel display device comprising the same |
KR100846586B1 (ko) * | 2006-05-29 | 2008-07-16 | 삼성에스디아이 주식회사 | 유기 발광 소자 및 이를 구비한 평판 표시 장치 |
TWI617869B (zh) | 2006-05-16 | 2018-03-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置和半導體裝置 |
JP5371143B2 (ja) * | 2006-10-12 | 2013-12-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101414125B1 (ko) * | 2006-10-12 | 2014-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조 방법 및 에칭장치 |
JP5428142B2 (ja) * | 2007-09-11 | 2014-02-26 | カシオ計算機株式会社 | 表示パネルの製造方法 |
JP2010056541A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2011003522A (ja) | 2008-10-16 | 2011-01-06 | Semiconductor Energy Lab Co Ltd | フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法 |
KR101065413B1 (ko) * | 2009-07-03 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR102369012B1 (ko) | 2009-09-16 | 2022-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 이의 제조 방법 |
KR102009305B1 (ko) | 2009-11-06 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
JP6045285B2 (ja) * | 2011-10-24 | 2016-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP6345544B2 (ja) * | 2013-09-05 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI665778B (zh) * | 2014-02-05 | 2019-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、模組及電子裝置 |
JP2015188062A (ja) | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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