JP5128064B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5128064B2 JP5128064B2 JP2005349857A JP2005349857A JP5128064B2 JP 5128064 B2 JP5128064 B2 JP 5128064B2 JP 2005349857 A JP2005349857 A JP 2005349857A JP 2005349857 A JP2005349857 A JP 2005349857A JP 5128064 B2 JP5128064 B2 JP 5128064B2
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- 239000004065 semiconductor Substances 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 36
- 239000012535 impurity Substances 0.000 claims description 31
- 238000009825 accumulation Methods 0.000 claims description 26
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910021471 metal-silicon alloy Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- -1 HfOx Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Description
2 n型不純物領域
3a,3b 高濃度p型不純物領域
4a,4b 高濃度p型不純物領域
5 ゲート絶縁膜
6,7 ゲート電極
8 ゲート配線
9 出力配線
10,11 電源配線
12 支持基板
13 埋め込み酸化膜
14 SOI(Silicon on Insulator)層
15 ゲート絶縁膜
16 ゲート電極
17 ソース・ドレイン層(NMOSトランジスタ)
18 ソース・ドレイン層(PMOSトランジスタ)
19 ゲート配線
20 出力配線
21,22 電源配線
Claims (3)
- 一対の異なる導電型のトランジスタを有する回路を備えた半導体装置において、
前記一対の異なる導電型のトランジスタは共にSOI基板に設けたSOI層に形成され、
前記一対の異なる導電型のトランジスタの一方は、前記SOI層の表面の少なくとも一部を覆うゲート絶縁膜と、該ゲート絶縁膜上に形成され、前記SOI層と反対の導電型の高濃度層によって形成されたゲート電極とを含んでノーマリオフのアキュムレーション型として形成され、前記ゲート電極の材料及び前記SOI層の不純物濃度が、前記ゲート電極と前記SOI層との仕事関数差により前記SOI層に形成される空乏層の厚さが前記SOI層の膜厚よりも大きくなるように選択されており、
前記一対の異なる導電型のトランジスタの他方は、前記SOI層の表面の少なくとも一部を覆うゲート絶縁膜と、該ゲート絶縁膜上に形成されたゲート電極とを含んで形成され、
前記一対の異なる導電型のトランジスタの一方はn型MOSFETであり、
前記一対の異なるトランジスタが形成される前記SOI層は同一の導電型と不純物濃度を有し、さらに、(110)面から±10°以内に傾けた面を有することを特徴とする半導体装置。 - 前記ゲート電極の下側に形成されているゲート絶縁膜が、マイクロ波励起のプラズマで形成されたSiO2,Si3N4および金属シリコン合金の酸化膜、金属シリコン合金の窒化膜を少なくとも一種類、含有することを特徴とする請求項1に記載の半導体装置。
- 前記ゲート絶縁膜が600℃以下の温度で形成されたことを特徴とする請求項2に記載の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005349857A JP5128064B2 (ja) | 2005-06-17 | 2005-12-02 | 半導体装置 |
KR1020077029218A KR101247876B1 (ko) | 2005-06-17 | 2006-06-16 | 반도체 장치 |
CN200680018680A CN100595896C (zh) | 2005-06-17 | 2006-06-16 | 半导体装置 |
US11/922,197 US7898033B2 (en) | 2005-06-17 | 2006-06-16 | Semiconductor device |
EP06757382A EP1906440A4 (en) | 2005-06-17 | 2006-06-16 | SEMICONDUCTOR DEVICE |
PCT/JP2006/312098 WO2006135039A1 (ja) | 2005-06-17 | 2006-06-16 | 半導体装置 |
TW095121893A TWI394232B (zh) | 2005-06-17 | 2006-06-19 | 半導體裝置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005177613 | 2005-06-17 | ||
JP2005177613 | 2005-06-17 | ||
JP2005349857A JP5128064B2 (ja) | 2005-06-17 | 2005-12-02 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007027677A JP2007027677A (ja) | 2007-02-01 |
JP5128064B2 true JP5128064B2 (ja) | 2013-01-23 |
Family
ID=37532392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005349857A Expired - Fee Related JP5128064B2 (ja) | 2005-06-17 | 2005-12-02 | 半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7898033B2 (ja) |
EP (1) | EP1906440A4 (ja) |
JP (1) | JP5128064B2 (ja) |
KR (1) | KR101247876B1 (ja) |
CN (1) | CN100595896C (ja) |
TW (1) | TWI394232B (ja) |
WO (1) | WO2006135039A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5329024B2 (ja) | 2006-06-27 | 2013-10-30 | 国立大学法人東北大学 | 半導体装置 |
JP2009076890A (ja) * | 2007-08-31 | 2009-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法、半導体装置、及び電子機器 |
JP5041154B2 (ja) * | 2007-11-19 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 高周波スイッチ回路 |
JP5299752B2 (ja) * | 2008-04-28 | 2013-09-25 | 国立大学法人東北大学 | 半導体装置 |
US7994577B2 (en) * | 2008-07-18 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD protection structures on SOI substrates |
JP5593107B2 (ja) | 2009-04-02 | 2014-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5856827B2 (ja) * | 2010-12-09 | 2016-02-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2013012768A (ja) * | 2012-09-05 | 2013-01-17 | Tohoku Univ | 半導体装置 |
FR2999802A1 (fr) * | 2012-12-14 | 2014-06-20 | St Microelectronics Sa | Cellule cmos realisee dans une technologie fd soi |
CN105593992B (zh) * | 2013-09-27 | 2020-02-14 | 英特尔公司 | 在共同衬底上具有不同功函数的非平面i/o半导体器件和逻辑半导体器件 |
US9209304B2 (en) * | 2014-02-13 | 2015-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | N/P MOS FinFET performance enhancement by specific orientation surface |
JP6543392B2 (ja) * | 2018-06-29 | 2019-07-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN112687689A (zh) * | 2020-12-10 | 2021-04-20 | 西安电子科技大学 | 一种fd cmos结构及其制备方法 |
WO2022057132A1 (zh) * | 2020-09-18 | 2022-03-24 | 西安电子科技大学 | CMOS结构及FinFET CMOS、FD CMOS、GAA CMOS的制备方法 |
CN112713191A (zh) * | 2020-12-23 | 2021-04-27 | 张鹤鸣 | 一种环栅纳米cmos结构及其制备方法 |
CN112349717B (zh) * | 2020-09-18 | 2023-02-10 | 西安电子科技大学 | 一种FinFET CMOS结构及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958266A (en) | 1974-04-19 | 1976-05-18 | Rca Corporation | Deep depletion insulated gate field effect transistors |
JPS54158848A (en) * | 1978-06-06 | 1979-12-15 | Nippon Precision Circuits | Semiconductor circuit device |
US5111260A (en) * | 1983-06-17 | 1992-05-05 | Texax Instruments Incorporated | Polysilicon FETs |
US4768076A (en) * | 1984-09-14 | 1988-08-30 | Hitachi, Ltd. | Recrystallized CMOS with different crystal planes |
JPS6170748A (ja) * | 1984-09-14 | 1986-04-11 | Hitachi Ltd | 半導体装置 |
JPS6292361A (ja) * | 1985-10-17 | 1987-04-27 | Toshiba Corp | 相補型半導体装置 |
JP3038939B2 (ja) * | 1991-02-08 | 2000-05-08 | 日産自動車株式会社 | 半導体装置 |
JPH04367278A (ja) * | 1991-06-14 | 1992-12-18 | Canon Inc | 絶縁ゲート薄膜トランジスタ及びその製造方法 |
JP3248791B2 (ja) | 1993-09-14 | 2002-01-21 | 三菱電機株式会社 | 半導体装置 |
JP2003115587A (ja) * | 2001-10-03 | 2003-04-18 | Tadahiro Omi | <110>方位のシリコン表面上に形成された半導体装置およびその製造方法 |
JP2003209258A (ja) * | 2002-01-17 | 2003-07-25 | National Institute Of Advanced Industrial & Technology | 電界効果トランジスタ |
US6911383B2 (en) * | 2003-06-26 | 2005-06-28 | International Business Machines Corporation | Hybrid planar and finFET CMOS devices |
JPWO2005020325A1 (ja) * | 2003-08-26 | 2007-11-01 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP3792694B2 (ja) * | 2003-12-08 | 2006-07-05 | セイコーエプソン株式会社 | 液晶表示装置 |
-
2005
- 2005-12-02 JP JP2005349857A patent/JP5128064B2/ja not_active Expired - Fee Related
-
2006
- 2006-06-16 US US11/922,197 patent/US7898033B2/en not_active Expired - Fee Related
- 2006-06-16 WO PCT/JP2006/312098 patent/WO2006135039A1/ja active Application Filing
- 2006-06-16 CN CN200680018680A patent/CN100595896C/zh not_active Expired - Fee Related
- 2006-06-16 EP EP06757382A patent/EP1906440A4/en not_active Withdrawn
- 2006-06-16 KR KR1020077029218A patent/KR101247876B1/ko not_active IP Right Cessation
- 2006-06-19 TW TW095121893A patent/TWI394232B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN101203946A (zh) | 2008-06-18 |
TWI394232B (zh) | 2013-04-21 |
KR101247876B1 (ko) | 2013-03-26 |
EP1906440A4 (en) | 2011-06-01 |
TW200709340A (en) | 2007-03-01 |
US7898033B2 (en) | 2011-03-01 |
WO2006135039A1 (ja) | 2006-12-21 |
KR20080024129A (ko) | 2008-03-17 |
EP1906440A1 (en) | 2008-04-02 |
CN100595896C (zh) | 2010-03-24 |
US20090321832A1 (en) | 2009-12-31 |
JP2007027677A (ja) | 2007-02-01 |
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