JP5299752B2 - 半導体装置 - Google Patents
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- JP5299752B2 JP5299752B2 JP2008116701A JP2008116701A JP5299752B2 JP 5299752 B2 JP5299752 B2 JP 5299752B2 JP 2008116701 A JP2008116701 A JP 2008116701A JP 2008116701 A JP2008116701 A JP 2008116701A JP 5299752 B2 JP5299752 B2 JP 5299752B2
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- 239000004065 semiconductor Substances 0.000 title claims description 97
- 238000009825 accumulation Methods 0.000 claims description 99
- 239000012535 impurity Substances 0.000 claims description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000000969 carrier Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 238000003860 storage Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 230000007257 malfunction Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
バルク電流制御型Accumulation型トランジスタのしきい値は、ドレイン電流がゲート電圧に対して指数関数的に増加する領域から指数関数的に増加しなくなる領域への境である。すなわち、図3に示したゾーンbとゾーンd(即ち、領域1と領域2)との遷移点である。よって、バルク電流制御型Accumulation型トランジスタのしきい値電圧は、シリコン領域の空乏層の厚さがTSOIと等しくなる時のゲート電圧であり、以下の数13で与えられる。
2、3、6、7 ソース・ドレイン領域
4、8 半導体層(SOI層)
Claims (16)
- チャンネル領域とその両端に設けたソース、ドレイン領域とを有するトランジスタであって、前記チャンネル領域をn型半導体で構成すると共にキャリアを電子とするか、または前記チャンネル領域をp型半導体で構成すると共にキャリアをホールとするAccumulation型トランジスタであって、前記チャンネル領域中のゲート絶縁膜/シリコン界面以外の領域にのみキャリアを伝導させるとともに、ドレイン電極に流れる電流がゲート電極に印加される電圧によって指数関数的に変化する領域に設定されたしきい値を有し、且つ、前記チャンネル領域の不純物原子濃度の統計的ばらつきで決まるしきい値電圧のばらつきの標準偏差(σVth)がLSIの電源電圧の23分の1より小さくなるように設定されている22nm以上の微細化世代のバルク電流制御型Accumulation型トランジスタ。
- トランジスタのドレイン電極に流れる電流がゲート電極に印加される電圧の増加に対して指数関数的に増加するサブスレショルド領域及びトランジスタのしきい値を含んだ動作領域中に、前記チャンネル領域中のゲート絶縁膜/シリコン界面以外の領域にキャリアを伝導させることを特徴とする請求項1に記載のバルク電流制御型Accumulation型トランジスタ。
- 前記チャンネル領域をSOI層で構成すると共に、該SOI層の厚さを100nmより小さくし、該SOI層の不純物原子濃度を2×1017[cm−3]より高くしたことを特徴とする請求項2に記載のバルク電流制御型Accumulation型トランジスタ。
- 前記ソース、ドレイン領域を前記チャンネル領域と同一導電型の半導体で構成したことを特徴とする請求項1〜3のいずれか一つに記載のバルク電流制御型Accumulation型トランジスタ。
- 前記ソース、ドレイン領域を、その仕事関数が前記チャンネル領域の半導体の仕事関数との差が0.32eV以下であるような金属または金属半導体化合物で構成したことを特徴とする請求項1〜3のいずれか一つに記載のバルク電流制御型Accumulation型トランジスタ。
- 前記チャンネル領域をn型シリコンで構成すると共に、前記ソース、ドレイン領域を、その仕事関数が−4.37eV以上であるような金属または金属半導体化合物で構成したことを特徴とする請求項5に記載のバルク電流制御型Accumulation型トランジスタ。
- 前記チャンネル領域をp型シリコンで構成すると共に、前記ソース、ドレイン領域を、その仕事関数が−4.95eV以下であるような金属または金属半導体化合物で構成したことを特徴とする請求項5に記載のバルク電流制御型Accumulation型トランジスタ。
- 前記トランジスタをノーマリーオフ型としたことを特徴とする請求項1〜7のいずれか一つに記載のバルク電流制御型Accumulation型トランジスタ。
- 前記チャンネル領域をSOI層で構成すると共に、該SOI層の厚さを、ゲート電極に印加される電圧がソース電極に印加される電圧と等しい時に、ドレイン電極に印加される電圧が0Vから電源電圧まで変化した際に、前記チャンネル領域と前記ソース領域の接触部分において前記半導体層に形成される空乏層の厚さより小さくしたことを特徴とする請求項8に記載のバルク電流制御型Accumulation型トランジスタ。
- ゲート電極に印加される電圧がソース電極に印加される電圧と等しい時に、ドレイン電極に印加される電圧が0Vから電源電圧まで変化した際に、前記チャンネル領域と前記ソース領域の接触部分においてゲート絶縁膜上に設けられるゲート電極と前記チャンネル領域の半導体層との仕事関数差により前記半導体層に形成される空乏層が前記半導体層の深さ方向にとぎれなく形成されるように、前記SOI層の厚さ、前記SOI層の不純物原子濃度、および前記チャンネル領域上のゲート電極の仕事関数を定めたことを特徴とする請求項9に記載のバルク電流制御型Accumulation型トランジスタ。
- 前記SOI層の厚さが10nm以下であると共に、前記チャンネル領域の不純物原子濃度が5×1017[cm−3]以上であることを特徴とする請求項1〜10のいずれか一つに記載のバルク電流制御型Accumulation型トランジスタ。
- 請求項1〜11のいずれか一つに記載のトランジスタを少なくとも二つ有し、その一方をnチャンネルトランジスタ、他方をpチャンネルトランジスタとしたことを特徴とするバルク電流制御型Accumulation型CMOS半導体装置。
- 前記nチャンネルトランジスタおよびpチャンネルトランジスタのチャンネル領域の少なくとも一部が(100)面または(100)面から±10°以内の面を有するようにしたことを特徴とする請求項12に記載のバルク電流制御型Accumulation型CMOS半導体装置。
- 前記nチャンネルトランジスタおよびpチャンネルトランジスタのチャンネル領域の少なくとも一部が(110)面または(110)面から±10°以内の面を有するようにしたことを特徴とする請求項13に記載のバルク電流制御型Accumulation型CMOS半導体装置。
- 前記nチャンネルトランジスタのチャンネル領域の少なくとも一部が(100)面または(100)面から±10°以内の面を有し、かつ前記pチャンネルトランジスタのチャンネル領域の少なくとも一部が(110)面または(110)面から±10°以内の面を有するようにしたことを特徴とする請求項12に記載のバルク電流制御型Accumulation型CMOS半導体装置。
- チャンネル領域の不純物原子濃度の統計的ばらつきで決まるしきい値電圧のばらつきの標準偏差(σVth)がLSIの電源電圧の23分の1より小さくなるように、チャネル領域における不純物原子濃度及び前記チャネル領域を形成する半導体層の膜厚を選択し、ゲート電圧に対してドレイン電流が指数関数的に変化する領域に設定された閾値を設定することにより、バルク電流制御型Accumulation型トランジスタを製造する工程を含む22nm以上の微細化世代の半導体装置を製造する半導体装置の製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008116701A JP5299752B2 (ja) | 2008-04-28 | 2008-04-28 | 半導体装置 |
PCT/JP2009/057310 WO2009133762A1 (ja) | 2008-04-28 | 2009-04-10 | 半導体装置 |
CN2009801152210A CN102017161B (zh) | 2008-04-28 | 2009-04-10 | 半导体装置 |
CN201310334981.9A CN103489919A (zh) | 2008-04-28 | 2009-04-10 | 半导体装置 |
US12/989,713 US20110042725A1 (en) | 2008-04-28 | 2009-04-10 | Semiconductor device |
EP09738699A EP2284901A1 (en) | 2008-04-28 | 2009-04-10 | Semiconductor device |
KR1020107025640A KR20100135906A (ko) | 2008-04-28 | 2009-04-10 | 반도체 장치 |
TW098113468A TWI478334B (zh) | 2008-04-28 | 2009-04-23 | 半導體裝置 |
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JP2008116701A JP5299752B2 (ja) | 2008-04-28 | 2008-04-28 | 半導体装置 |
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JP2012194693A Division JP2013012768A (ja) | 2012-09-05 | 2012-09-05 | 半導体装置 |
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JP2009267195A JP2009267195A (ja) | 2009-11-12 |
JP5299752B2 true JP5299752B2 (ja) | 2013-09-25 |
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JP2008116701A Active JP5299752B2 (ja) | 2008-04-28 | 2008-04-28 | 半導体装置 |
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US (1) | US20110042725A1 (ja) |
EP (1) | EP2284901A1 (ja) |
JP (1) | JP5299752B2 (ja) |
KR (1) | KR20100135906A (ja) |
CN (2) | CN103489919A (ja) |
TW (1) | TWI478334B (ja) |
WO (1) | WO2009133762A1 (ja) |
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EP2613910A4 (en) * | 2010-09-08 | 2017-12-13 | Basf Se | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films |
JP5835790B2 (ja) * | 2011-01-26 | 2015-12-24 | 国立大学法人東北大学 | 半導体装置 |
US10553494B2 (en) * | 2016-11-29 | 2020-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Breakdown resistant semiconductor apparatus and method of making same |
US11670637B2 (en) * | 2019-02-19 | 2023-06-06 | Intel Corporation | Logic circuit with indium nitride quantum well |
CN113533143B (zh) * | 2021-07-21 | 2022-10-28 | 东南大学 | 描述堆积散体运动的数学模型的构建方法 |
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US5293058A (en) * | 1992-11-12 | 1994-03-08 | The Trustees Of Columbia University | Linear voltage-controlled resistance element |
JPH0951083A (ja) * | 1995-08-10 | 1997-02-18 | Mitsubishi Electric Corp | ゲートアレイ型半導体集積回路装置及びその製造方法 |
JP3699823B2 (ja) * | 1998-05-19 | 2005-09-28 | 株式会社東芝 | 半導体装置 |
US6855988B2 (en) * | 2002-07-08 | 2005-02-15 | Viciciv Technology | Semiconductor switching devices |
JP2004146550A (ja) * | 2002-10-24 | 2004-05-20 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US20040079997A1 (en) * | 2002-10-24 | 2004-04-29 | Noriyuki Miura | Semiconductor device and metal-oxide-semiconductor field-effect transistor |
JP5128064B2 (ja) * | 2005-06-17 | 2013-01-23 | 国立大学法人東北大学 | 半導体装置 |
JP5170531B2 (ja) * | 2005-12-02 | 2013-03-27 | 国立大学法人東北大学 | 半導体装置 |
US7863713B2 (en) * | 2005-12-22 | 2011-01-04 | Tohoku University | Semiconductor device |
JP5329024B2 (ja) * | 2006-06-27 | 2013-10-30 | 国立大学法人東北大学 | 半導体装置 |
CN101490823B (zh) * | 2006-07-13 | 2012-03-07 | 国立大学法人东北大学 | 半导体装置 |
CN101490849B (zh) * | 2006-07-13 | 2012-08-08 | 国立大学法人东北大学 | 晶体管及半导体器件 |
JP5010310B2 (ja) * | 2007-02-28 | 2012-08-29 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
JP5354944B2 (ja) * | 2008-03-27 | 2013-11-27 | 株式会社東芝 | 半導体装置および電界効果トランジスタ |
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JP2009267195A (ja) | 2009-11-12 |
KR20100135906A (ko) | 2010-12-27 |
CN102017161A (zh) | 2011-04-13 |
CN102017161B (zh) | 2013-09-04 |
CN103489919A (zh) | 2014-01-01 |
TW201003913A (en) | 2010-01-16 |
US20110042725A1 (en) | 2011-02-24 |
EP2284901A1 (en) | 2011-02-16 |
WO2009133762A1 (ja) | 2009-11-05 |
TWI478334B (zh) | 2015-03-21 |
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