JP2007027677A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2007027677A JP2007027677A JP2005349857A JP2005349857A JP2007027677A JP 2007027677 A JP2007027677 A JP 2007027677A JP 2005349857 A JP2005349857 A JP 2005349857A JP 2005349857 A JP2005349857 A JP 2005349857A JP 2007027677 A JP2007027677 A JP 2007027677A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000009825 accumulation Methods 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910021471 metal-silicon alloy Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000010354 integration Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- -1 HfOx Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Abstract
【解決手段】 SOI基板上に設けた半導体層(SOI層)と、前記SOI層上に設けられたゲート電極とを備え、前記ゲート電極と前記SOI層の仕事関数差による空乏層の厚さが前記SOI層の膜厚より大きくなるように、前記SOI層の膜厚を設定してノーマリオフとしたMOSトランジスタを少なくとも一種類、備える。
【選択図】 図1
Description
2 n型不純物領域
3a,3b 高濃度p型不純物領域
4a,4b 高濃度p型不純物領域
5 ゲート絶縁膜
6,7 ゲート電極
8 ゲート配線
9 出力配線
10,11 電源配線
12 支持基板
13 埋め込み酸化膜
14 SOI(Silicon on Insulator)層
15 ゲート絶縁膜
16 ゲート電極
17 ソース・ドレイン層(NMOSトランジスタ)
18 ソース・ドレイン層(PMOSトランジスタ)
19 ゲート配線
20 出力配線
21,22 電源配線
Claims (8)
- 異なる導電型のトランジスタを有する回路を備えた半導体装置において、SOI基板に設けたSOI層と、当該SOI層と同一の導電型の高濃度層によって形成され、前記SOI層上に設けられたゲート電極とを備え、前記ゲート電極と前記SOI層の仕事関数差による空乏層の厚さが前記SOI層の膜厚より大きくなるように、前記SOI層の膜厚を設定すると共に、チャネルを形成する領域の表面が(110)面から±10°以内の面を有しているトランジスタが少なくとも一種類、備えられていることを特徴とする半導体装置。
- 異なる導電型のトランジスタを有する回路を備えた半導体装置において、SOI基板に設けたMOS型トランジスタと、上記SOI基板の第1の面上に上記MOSトランジスタと同一ゲート電極と、異なる導電型のソース・ドレイン層とを備え、チャネルを形成する領域の表面が(110)面から±10°以内の面を有しているMOSトランジスタを備えていることを特徴とする半導体装置。
- 上記SOI基板上のSOI層の膜厚を制御して、上記異なる導電型のトランジスタの平面上の面積および電流駆動能力をほぼ等しくすることを特徴とする請求項1又は2に記載の半導体装置。
- ゲート絶縁膜が、マイクロ波励起のプラズマで形成されたSiO2,Si3N4および金属シリコン合金の酸化膜、金属シリコン合金の窒化膜を少なくとも一種類、含有することを特徴とする請求項1乃至請求項3のいずれかに記載の半導体装置。
- 上記ゲート絶縁膜が600℃以下の温度で形成されたことを特徴とする請求項4に記載の半導体装置。
- 異なる導電型のトランジスタを少なくとも一対有する回路を備えた半導体装置において、前記トランジスタの少なくとも一つはSOI基板に設けた半導体層と、その表面の少なくとも一部を覆うゲート絶縁層と、該ゲート絶縁層上に形成されたゲート電極とを少なくとも含んでnormally offのaccumulation型として形成され、前記ゲート電極と前記半導体層との仕事関数差により前記半導体層に形成される空乏層の厚さが前記半導体層の膜圧よりも大きくなるように、前記ゲート電極の材料及び前記半導体層の不純物濃度を選ぶことを特徴とする半導体装置。
- 請求項6において、前記normally offのaccumulation型のトランジスタは、(110)面から±10°以内の面に形成されたチャンネル領域を備えていることを特徴とする半導体装置。
- 請求項6において、前記normally offのaccumulation型のトランジスタは、(110)面から±10°以内の面とは異なる面に形成されたチャンネル領域を備えていることを特徴とする半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005349857A JP5128064B2 (ja) | 2005-06-17 | 2005-12-02 | 半導体装置 |
CN200680018680A CN100595896C (zh) | 2005-06-17 | 2006-06-16 | 半导体装置 |
KR1020077029218A KR101247876B1 (ko) | 2005-06-17 | 2006-06-16 | 반도체 장치 |
US11/922,197 US7898033B2 (en) | 2005-06-17 | 2006-06-16 | Semiconductor device |
PCT/JP2006/312098 WO2006135039A1 (ja) | 2005-06-17 | 2006-06-16 | 半導体装置 |
EP06757382A EP1906440A4 (en) | 2005-06-17 | 2006-06-16 | SEMICONDUCTOR DEVICE |
TW095121893A TWI394232B (zh) | 2005-06-17 | 2006-06-19 | 半導體裝置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005177613 | 2005-06-17 | ||
JP2005177613 | 2005-06-17 | ||
JP2005349857A JP5128064B2 (ja) | 2005-06-17 | 2005-12-02 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007027677A true JP2007027677A (ja) | 2007-02-01 |
JP5128064B2 JP5128064B2 (ja) | 2013-01-23 |
Family
ID=37532392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005349857A Expired - Fee Related JP5128064B2 (ja) | 2005-06-17 | 2005-12-02 | 半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7898033B2 (ja) |
EP (1) | EP1906440A4 (ja) |
JP (1) | JP5128064B2 (ja) |
KR (1) | KR101247876B1 (ja) |
CN (1) | CN100595896C (ja) |
TW (1) | TWI394232B (ja) |
WO (1) | WO2006135039A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009076890A (ja) * | 2007-08-31 | 2009-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法、半導体装置、及び電子機器 |
JP2009124653A (ja) * | 2007-11-19 | 2009-06-04 | Renesas Technology Corp | 高周波スイッチ回路 |
JP2012138575A (ja) * | 2010-12-09 | 2012-07-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US8329520B2 (en) | 2009-04-02 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device using a laser annealing process |
JP2013012768A (ja) * | 2012-09-05 | 2013-01-17 | Tohoku Univ | 半導体装置 |
US8643106B2 (en) | 2006-06-27 | 2014-02-04 | National University Corporation Tohoku University | Semiconductor device |
JP2018148244A (ja) * | 2018-06-29 | 2018-09-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5299752B2 (ja) * | 2008-04-28 | 2013-09-25 | 国立大学法人東北大学 | 半導体装置 |
US7994577B2 (en) * | 2008-07-18 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD protection structures on SOI substrates |
FR2999802A1 (fr) * | 2012-12-14 | 2014-06-20 | St Microelectronics Sa | Cellule cmos realisee dans une technologie fd soi |
WO2015047313A1 (en) * | 2013-09-27 | 2015-04-02 | Intel Corporation | Non-planar i/o and logic semiconductor devices having different workfunction on common substrate |
US9209304B2 (en) * | 2014-02-13 | 2015-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | N/P MOS FinFET performance enhancement by specific orientation surface |
WO2022057132A1 (zh) * | 2020-09-18 | 2022-03-24 | 西安电子科技大学 | CMOS结构及FinFET CMOS、FD CMOS、GAA CMOS的制备方法 |
CN112349717B (zh) * | 2020-09-18 | 2023-02-10 | 西安电子科技大学 | 一种FinFET CMOS结构及其制备方法 |
CN112687689A (zh) * | 2020-12-10 | 2021-04-20 | 西安电子科技大学 | 一种fd cmos结构及其制备方法 |
CN112713191A (zh) * | 2020-12-23 | 2021-04-27 | 张鹤鸣 | 一种环栅纳米cmos结构及其制备方法 |
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JPS6170748A (ja) * | 1984-09-14 | 1986-04-11 | Hitachi Ltd | 半導体装置 |
JPS6292361A (ja) * | 1985-10-17 | 1987-04-27 | Toshiba Corp | 相補型半導体装置 |
JPH04367278A (ja) * | 1991-06-14 | 1992-12-18 | Canon Inc | 絶縁ゲート薄膜トランジスタ及びその製造方法 |
JP2003209258A (ja) * | 2002-01-17 | 2003-07-25 | National Institute Of Advanced Industrial & Technology | 電界効果トランジスタ |
JP2004163961A (ja) * | 2003-12-08 | 2004-06-10 | Seiko Epson Corp | 液晶表示装置 |
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JP3038939B2 (ja) * | 1991-02-08 | 2000-05-08 | 日産自動車株式会社 | 半導体装置 |
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JP2003115587A (ja) | 2001-10-03 | 2003-04-18 | Tadahiro Omi | <110>方位のシリコン表面上に形成された半導体装置およびその製造方法 |
US6911383B2 (en) * | 2003-06-26 | 2005-06-28 | International Business Machines Corporation | Hybrid planar and finFET CMOS devices |
WO2005020325A1 (ja) * | 2003-08-26 | 2005-03-03 | Nec Corporation | 半導体装置及びその製造方法 |
-
2005
- 2005-12-02 JP JP2005349857A patent/JP5128064B2/ja not_active Expired - Fee Related
-
2006
- 2006-06-16 US US11/922,197 patent/US7898033B2/en not_active Expired - Fee Related
- 2006-06-16 EP EP06757382A patent/EP1906440A4/en not_active Withdrawn
- 2006-06-16 KR KR1020077029218A patent/KR101247876B1/ko not_active IP Right Cessation
- 2006-06-16 WO PCT/JP2006/312098 patent/WO2006135039A1/ja active Application Filing
- 2006-06-16 CN CN200680018680A patent/CN100595896C/zh not_active Expired - Fee Related
- 2006-06-19 TW TW095121893A patent/TWI394232B/zh not_active IP Right Cessation
Patent Citations (6)
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JPS54158848A (en) * | 1978-06-06 | 1979-12-15 | Nippon Precision Circuits | Semiconductor circuit device |
JPS6170748A (ja) * | 1984-09-14 | 1986-04-11 | Hitachi Ltd | 半導体装置 |
JPS6292361A (ja) * | 1985-10-17 | 1987-04-27 | Toshiba Corp | 相補型半導体装置 |
JPH04367278A (ja) * | 1991-06-14 | 1992-12-18 | Canon Inc | 絶縁ゲート薄膜トランジスタ及びその製造方法 |
JP2003209258A (ja) * | 2002-01-17 | 2003-07-25 | National Institute Of Advanced Industrial & Technology | 電界効果トランジスタ |
JP2004163961A (ja) * | 2003-12-08 | 2004-06-10 | Seiko Epson Corp | 液晶表示装置 |
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JP2009076890A (ja) * | 2007-08-31 | 2009-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法、半導体装置、及び電子機器 |
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US8329520B2 (en) | 2009-04-02 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device using a laser annealing process |
JP2012138575A (ja) * | 2010-12-09 | 2012-07-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
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JP2018148244A (ja) * | 2018-06-29 | 2018-09-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Also Published As
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JP5128064B2 (ja) | 2013-01-23 |
TWI394232B (zh) | 2013-04-21 |
US20090321832A1 (en) | 2009-12-31 |
WO2006135039A1 (ja) | 2006-12-21 |
EP1906440A4 (en) | 2011-06-01 |
US7898033B2 (en) | 2011-03-01 |
EP1906440A1 (en) | 2008-04-02 |
KR20080024129A (ko) | 2008-03-17 |
CN100595896C (zh) | 2010-03-24 |
CN101203946A (zh) | 2008-06-18 |
KR101247876B1 (ko) | 2013-03-26 |
TW200709340A (en) | 2007-03-01 |
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