JP5593107B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP5593107B2 JP5593107B2 JP2010078684A JP2010078684A JP5593107B2 JP 5593107 B2 JP5593107 B2 JP 5593107B2 JP 2010078684 A JP2010078684 A JP 2010078684A JP 2010078684 A JP2010078684 A JP 2010078684A JP 5593107 B2 JP5593107 B2 JP 5593107B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal semiconductor
- single crystal
- semiconductor layer
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 408
- 238000000034 method Methods 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 239000013078 crystal Substances 0.000 claims description 295
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 404
- 239000000758 substrate Substances 0.000 description 231
- 150000002500 ions Chemical class 0.000 description 38
- 239000012535 impurity Substances 0.000 description 36
- 238000012545 processing Methods 0.000 description 28
- 239000007789 gas Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 25
- 230000007547 defect Effects 0.000 description 14
- 230000006870 function Effects 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000000926 separation method Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000005401 electroluminescence Methods 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 230000006872 improvement Effects 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001678 elastic recoil detection analysis Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052800 carbon group element Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Description
本実施の形態では、絶縁表面上に半導体層を有する半導体基板の作製方法及び当該半導体基板を用いた半導体装置の作製方法の一例について、図面を参照して説明する。
はじめに、半導体基板の作製方法について図1、図2を用いて説明する。なお、図1は断面の模式図に相当し、図2は平面の模式図に相当する。
続いて、基板100上に設けられた結晶性半導体層110を用いて、n型のトランジスタ及びp型のトランジスタを有する半導体装置を作製する方法について、図3を参照して説明する。
次に、トランジスタのチャネル層の上面を{211}面とする利点について、シミュレーションに基づいて説明する。
なお、上記図1、図2では、一つの単結晶半導体層104を用いて、結晶性半導体層110を形成する場合を示したが、これに限られない。適用する基板100の大きさに応じて、複数の結晶性半導体層110を配置することができる。
本実施の形態では、上記実施の形態と異なる半導体基板の作製方法の一例について、図面を参照して説明する。なお、本実施の形態で示す作製工程(適用できる材料等)は多くの部分で上記実施の形態1と共通している。したがって、以下においては、重複する部分の説明は省略し、異なる点について詳細に説明する。
本実施の形態では、上記実施の形態と異なる半導体基板の作製方法の一例について、図面を参照して説明する。なお、本実施の形態で示す作製工程(適用できる材料等)は多くの部分で上記実施の形態1と共通している。したがって、以下においては、重複する部分の説明は省略し、異なる点について詳細に説明する。
本実施の形態では、{211}面から±10°以内の面を上面とする島状の単結晶半導体層の作製方法の例について、図8〜図11を参照して説明する。なお、図8〜図11はそれぞれ異なる作製方法について説明する図面であるが、互いに類似する点も多いから、主に相違点について説明し、類似する構成の詳細については省略することがある。
はじめに、図8を参照して、第1の態様にかかる作製方法を説明する。
・加速電圧 10kV以上100kV以下(好ましくは30kV以上80kV以下)
・ドーズ量 1×1016/cm2以上4×1016/cm2以下
・ビーム電流密度 2μA/cm2以上(好ましくは5μA/cm2以上、より好ましくは10μA/cm2以上)
次に、図9を参照して、第2の態様にかかる作製方法を説明する。第2の態様と第1の態様の相違は、単結晶半導体基板210を分断しない点にある。よって、以下ではこの点について主に説明する。
次に、図10を参照して、第3の態様にかかる作製方法を説明する。第3の態様と第1の態様の相違は、ベース基板200上に非単結晶半導体層を形成する点にある。よって、以下ではこの点について主に説明する。
次に、図11を参照して、第4の態様にかかる作製方法を説明する。第4の態様と第1の態様の相違は、単結晶半導体基板210を分断しない点、およびベース基板200上に非単結晶半導体層を形成する点にある。よって、以下ではこの点について主に説明する。
本実施の形態において、図面を参照しながら半導体装置の具体的な態様を説明する。
101 絶縁層
102 絶縁層
104 単結晶半導体層
106 非単結晶半導体層
108 レーザー光
110 結晶性半導体層
121 ベース基板
122 絶縁層
132 絶縁層
142 絶縁層
144 開口部
200 ベース基板
202 絶縁層
210 単結晶半導体基板
212 単結晶半導体基板
214 絶縁層
216 脆化領域
220 単結晶半導体層
222 単結晶半導体基板
224 単結晶半導体層
230 非単結晶半導体層
320 単結晶半導体層
322 走査線
323 信号線
324 画素電極
325 TFT
327 層間絶縁膜
328 電極
329 柱状スペーサ
330 配向膜
332 対向基板
333 対向電極
334 配向膜
335 液晶層
340 チャネル形成領域
341 高濃度不純物領域
401 選択用トランジスタ
402 表示制御用トランジスタ
403 単結晶半導体層
404 単結晶半導体層
405 走査線
406 信号線
407 電流供給線
408 画素電極
411 電極
412 ゲート電極
413 電極
427 層間絶縁膜
428 隔壁層
429 EL層
430 対向電極
431 対向基板
432 樹脂層
451 チャネル形成領域
452 高濃度不純物領域
500 マイクロプロセッサ
501 演算回路
502 演算回路制御部
503 命令解析部
504 制御部
505 タイミング制御部
506 レジスタ
507 レジスタ制御部
508 バスインターフェース
509 専用メモリ
510 メモリインターフェース
511 RFCPU
512 アナログ回路部
513 デジタル回路部
514 共振回路
515 整流回路
516 定電圧回路
517 リセット回路
518 発振回路
519 復調回路
520 変調回路
521 RFインターフェース
522 制御レジスタ
523 クロックコントローラ
524 CPUインターフェース
525 中央処理ユニット
526 ランダムアクセスメモリ
527 専用メモリ
528 アンテナ
529 容量部
530 電源管理回路
701 筐体
702 筐体
703 表示部
704 スピーカ
705 マイクロフォン
706 操作キー
707 ポインティングデバイス
708 表面カメラ用レンズ
709 外部接続端子ジャック
710 イヤホン端子
711 キーボード
712 外部メモリスロット
713 裏面カメラ
714 ライト
901 筐体
902 支持台
903 表示部
904 スピーカ部
905 ビデオ入力端子
911 筐体
912 表示部
913 キーボード
914 外部接続ポート
915 ポインティングデバイス
921 筐体
922 表示部
923 操作キー
924 センサ部
931 筐体
932 表示部
933 レンズ
934 操作キー
935 シャッターボタン
941 本体
942 表示部
943 筐体
944 外部接続ポート
945 リモコン受信部
946 受像部
947 バッテリー
948 音声入力部
949 操作キー
950 接眼部
104a 単結晶半導体層
120a 結晶性半導体層
120b 結晶性半導体層
120c 結晶性半導体層
124a 導電層
124b 導電層
124c 導電層
126a 不純物領域
126b 不純物領域
128a 不純物領域
128b 不純物領域
129a 不純物領域
129b 不純物領域
130a トランジスタ
130b トランジスタ
130c トランジスタ
134a 導電層
134b 導電層
134c 導電層
134d 導電層
134e 導電層
Claims (1)
- 絶縁表面上に単結晶半導体層を形成する工程と、
前記単結晶半導体層の上面に接して非単結晶半導体層を形成する工程と、
前記単結晶半導体層を種結晶として前記非単結晶半導体層を結晶化して結晶性半導体層を形成する工程と、
前記結晶性半導体層を用いて、第1の結晶性半導体層と、第2の結晶性半導体層と、を形成する工程と、
前記第1の結晶性半導体層を用いたnチャネル型トランジスタと、前記第2の結晶性半導体層を用いたpチャネル型トランジスタと、を形成する工程と、を有し、
前記第1の結晶性半導体層は、上面が{211}面から±10°以内の面であり、チャネル長方向が前記{211}面から±10°以内の面における〈111〉方向であり、
前記第2の結晶性半導体層は、上面が{211}面から±10°以内の面であり、チャネル長方向が前記{211}面から±10°以内の面の〈111〉方向であることを特徴とする半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010078684A JP5593107B2 (ja) | 2009-04-02 | 2010-03-30 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009090471 | 2009-04-02 | ||
JP2009090471 | 2009-04-02 | ||
JP2010078684A JP5593107B2 (ja) | 2009-04-02 | 2010-03-30 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010258435A JP2010258435A (ja) | 2010-11-11 |
JP2010258435A5 JP2010258435A5 (ja) | 2013-02-28 |
JP5593107B2 true JP5593107B2 (ja) | 2014-09-17 |
Family
ID=42826527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010078684A Expired - Fee Related JP5593107B2 (ja) | 2009-04-02 | 2010-03-30 | 半導体装置の作製方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8329520B2 (ja) |
JP (1) | JP5593107B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8735263B2 (en) | 2011-01-21 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0291923A (ja) * | 1988-09-29 | 1990-03-30 | Toshiba Corp | 半導体装置の製造方法 |
US5976959A (en) | 1997-05-01 | 1999-11-02 | Industrial Technology Research Institute | Method for forming large area or selective area SOI |
JPH11150046A (ja) | 1997-11-17 | 1999-06-02 | Shin Etsu Chem Co Ltd | Soi基板の製造方法及びsoi基板 |
JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
US6602758B2 (en) | 2001-06-15 | 2003-08-05 | Agere Systems, Inc. | Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processing |
JP4190906B2 (ja) | 2003-02-07 | 2008-12-03 | 信越半導体株式会社 | シリコン半導体基板及びその製造方法 |
US7176528B2 (en) | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
JP2006229047A (ja) | 2005-02-18 | 2006-08-31 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
JP5128064B2 (ja) | 2005-06-17 | 2013-01-23 | 国立大学法人東北大学 | 半導体装置 |
JP4542492B2 (ja) * | 2005-10-07 | 2010-09-15 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、電子機器、並びに半導体装置 |
US7579654B2 (en) | 2006-05-31 | 2009-08-25 | Corning Incorporated | Semiconductor on insulator structure made using radiation annealing |
US7816735B2 (en) * | 2006-10-13 | 2010-10-19 | Samsung Electronics Co., Ltd. | Integrated circuit devices including a transcription-preventing pattern |
US7972943B2 (en) * | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US7795114B2 (en) | 2007-08-10 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of SOI substrate and semiconductor device |
JP2010199338A (ja) * | 2009-02-25 | 2010-09-09 | Sumco Corp | 貼り合わせウェーハの製造方法 |
-
2010
- 2010-03-30 JP JP2010078684A patent/JP5593107B2/ja not_active Expired - Fee Related
- 2010-03-31 US US12/750,739 patent/US8329520B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2010258435A (ja) | 2010-11-11 |
US8329520B2 (en) | 2012-12-11 |
US20100255645A1 (en) | 2010-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6549272B2 (ja) | 半導体装置の作製方法 | |
KR101576447B1 (ko) | 단결정 반도체층의 형성 방법, 결정성 반도체층의 형성 방법, 다결정층의 형성 방법, 및 반도체 장치 제작 방법 | |
US7767547B2 (en) | Manufacturing method of SOI substrate | |
TW558743B (en) | Peeling method and method of manufacturing semiconductor device | |
US8043935B2 (en) | Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device | |
JP5503866B2 (ja) | Soi基板の作製方法 | |
EP1383165A2 (en) | Peeling method | |
JP2009278073A (ja) | 半導体装置及び半導体装置の作製方法 | |
JP5607399B2 (ja) | Soi基板の作製方法 | |
JP5409033B2 (ja) | 半導体装置の作製方法 | |
US8653426B2 (en) | Heat treatment apparatus and method for manufacturing SOI substrate using the heat treatment apparatus | |
JP5666794B2 (ja) | Soi基板の作製方法 | |
JP2010114431A (ja) | Soi基板の作製方法 | |
JP5486781B2 (ja) | 半導体装置の作製方法 | |
JP5478199B2 (ja) | 半導体装置の作製方法 | |
US7842584B2 (en) | Method for manufacturing semiconductor device | |
JP5593107B2 (ja) | 半導体装置の作製方法 | |
JP5284669B2 (ja) | 半導体装置の作製方法 | |
JP2010177662A (ja) | Soi基板の作製方法及び半導体装置の作製方法 | |
JP5580010B2 (ja) | 半導体装置の作製方法 | |
JP5700621B2 (ja) | 半導体装置の作製方法 | |
JP4293412B2 (ja) | 結晶質シリコン膜の作製方法 | |
JP2010147313A (ja) | Soi基板の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130109 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130109 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140212 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140307 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140729 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140804 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5593107 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |