JP2007165541A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title abstract description 28
- 238000005468 ion implantation Methods 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 16
- 230000000694 effects Effects 0.000 abstract description 22
- 150000002500 ions Chemical class 0.000 abstract description 12
- 239000007943 implant Substances 0.000 abstract 1
- 230000001629 suppression Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910015890 BF2 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
【解決手段】 本発明に係る半導体装置の製造方法は、半導体層上にゲート絶縁膜を形成する工程と;前記ゲート絶縁膜上に第1ゲート電極層を形成する工程と;前記第1ゲート電極層の下方にポケットイオン領域を形成する工程と;前記ポケットイオン領域の形成後に、前記第1ゲート電極層の上に第2ゲート電極層を重ねて形成する工程とを含んでいる。
【選択図】図4
Description
by ion Implanted Oxygen)や、酸化膜を介してシリコン基板同士を貼り合わせること(Wafer bonding)で成形されるもの等がある。SOI構造をとる半導体装置は、従来のバルクシリコンを用いた半導体装置に比べ、様々な優れた特徴を有する。例えば、SOI構造をMOSFETに適用した場合、MOSFETの素子活性領域の直下部には、SOI構造を構成する絶縁体層が配置されるため、MOSFETに付加される寄生容量を大幅に低減させることが可能となる。これにより、MOSFETのスイッチング特性を向上させ、動作速度の高速化、省電力化、信頼性の向上等を図ることが可能となる。
al,“Deep−Submicrometer Large−Angle−Tilt Implanted Drain(LATID)
Technology," IEEE Trans. Electron Dev.,39(10),2312(1992)”等にされているように、半導体層に所謂ポケットイオン領域を形成する方法がある。ポケットイオン領域とは、チャネル領域と導電型が同一で、チャネル領域よりも高濃度の不純物を、ゲート電極近傍でソース・ドレイン領域に接するように拡散させた領域のことを言う。ポケットイオン領域を形成することにより、ソース・ドレイン領域からの空乏層の伸びを抑制し、上述した短チャネル効果を抑制することが可能となる。
「T.Hori,etal,"Deep−Submicrometer Large−Angle−Tilt Implanted Drain(LATID)Technology," IEEE Trans. Electron Dev.,39(10),2312(1992)"
Ion Etching)法等により、シリコン層114に溝を形成し、その溝にCVD(ChemicalVapor Deposition)法等によって形成された酸化膜等の絶縁膜を埋め込み、さらにCMP(Chemical
Mechanical Polishing)法やエッチバック等により、素子領域におけるこの絶縁膜を除去し、平坦化することによって素子分離領域が形成される。
116 ゲート絶縁膜
118a 第1のゲート電極層
120 ポケット領域
128 第2のゲート電極層
126,132,232 サイドウォール
130,230 不純物拡散層
Claims (6)
- 半導体層上にゲート絶縁膜を形成する工程と;
前記ゲート絶縁膜上に第1ゲート電極層を形成する工程と;
前記第1ゲート電極層の下方にポケットイオン領域を形成する工程と;
前記ポケットイオン領域の形成後に、前記第1ゲート電極層の上に第2ゲート電極層を重ねて形成する工程とを含むことを特徴とする半導体装置の製造方法。 - 前記ポケットイオン領域は、斜め方向からのイオン注入によって形成されることを特徴とする請求項1に記載の製造方法。
- 前記第2ゲート電極層がゲート電極として最上層であることを特徴とする請求項1又は2に記載の製造方法。
- 前記第1ゲート電極層形成後に当該第1ゲート電極層の側面にサイドウォールを形成する工程と;前記第2ゲート電極層の形成後に前記半導体層に不純物拡散領域を形成する工程とを更に含み、
前記第2ゲート電極層は、前記サイドウォールの形成後に形成されることを特徴とする請求項1,2又は3に記載の製造方法。 - 前記第1ゲート電極層形成後に当該第1ゲート電極層の側面に第1サイドウォールを形成する工程と;前記第2ゲート電極層形成後に当該第2ゲート電極層の側面に第2サイドウォールを形成する工程と;前記第2サイドウォールの形成後に前記半導体層に不純物拡散領域を形成する工程とを更に含み、
前記第2ゲート電極層は、前記第1サイドウォール形成後に形成されることを特徴とする請求項1,2又は3に記載の製造方法。 - 前記半導体装置は、SOI−MOSFETであることを特徴とする請求項1,2,3,4又は5に記載の製造方法。
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JP2005359068A JP2007165541A (ja) | 2005-12-13 | 2005-12-13 | 半導体装置の製造方法 |
US11/635,690 US7504293B2 (en) | 2005-12-13 | 2006-12-08 | Fabrication method for semiconductor device |
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JP2012138575A (ja) * | 2010-12-09 | 2012-07-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
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CN101794712A (zh) * | 2010-01-28 | 2010-08-04 | 中国科学院上海微系统与信息技术研究所 | 大角度离子注入抑制soi mos器件浮体效应的方法 |
Citations (5)
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US20070134863A1 (en) | 2007-06-14 |
US7504293B2 (en) | 2009-03-17 |
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