DE3275684D1 - Insulated gate field effect transistor - Google Patents
Insulated gate field effect transistorInfo
- Publication number
- DE3275684D1 DE3275684D1 DE8282304433T DE3275684T DE3275684D1 DE 3275684 D1 DE3275684 D1 DE 3275684D1 DE 8282304433 T DE8282304433 T DE 8282304433T DE 3275684 T DE3275684 T DE 3275684T DE 3275684 D1 DE3275684 D1 DE 3275684D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- insulated gate
- gate field
- insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56131521A JPS5833870A (ja) | 1981-08-24 | 1981-08-24 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3275684D1 true DE3275684D1 (en) | 1987-04-16 |
Family
ID=15059993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282304433T Expired DE3275684D1 (en) | 1981-08-24 | 1982-08-23 | Insulated gate field effect transistor |
Country Status (6)
Country | Link |
---|---|
US (1) | US4656492A (de) |
EP (1) | EP0073623B1 (de) |
JP (1) | JPS5833870A (de) |
KR (1) | KR900004179B1 (de) |
CA (1) | CA1181532A (de) |
DE (1) | DE3275684D1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
US5276346A (en) * | 1983-12-26 | 1994-01-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having protective/output elements and internal circuits |
JPH0695563B2 (ja) * | 1985-02-01 | 1994-11-24 | 株式会社日立製作所 | 半導体装置 |
US4697198A (en) * | 1984-08-22 | 1987-09-29 | Hitachi, Ltd. | MOSFET which reduces the short-channel effect |
JPS6153761A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | 半導体装置 |
JPH0824181B2 (ja) * | 1985-04-15 | 1996-03-06 | 株式会社日立製作所 | Mis型半導体装置及びその製造方法 |
US5257095A (en) * | 1985-12-04 | 1993-10-26 | Advanced Micro Devices, Inc. | Common geometry high voltage tolerant long channel and high speed short channel field effect transistors |
US5231474A (en) * | 1986-03-21 | 1993-07-27 | Advanced Power Technology, Inc. | Semiconductor device with doped electrical breakdown control region |
JPS62274767A (ja) * | 1986-05-23 | 1987-11-28 | Fujitsu Ltd | 高耐圧半導体装置及びその製造方法 |
US5036375A (en) * | 1986-07-23 | 1991-07-30 | Texas Instruments Incorporated | Floating-gate memory cell with tailored doping profile |
US4979005A (en) * | 1986-07-23 | 1990-12-18 | Texas Instruments Incorporated | Floating-gate memory cell with tailored doping profile |
US5156990A (en) * | 1986-07-23 | 1992-10-20 | Texas Instruments Incorporated | Floating-gate memory cell with tailored doping profile |
US5215936A (en) * | 1986-10-09 | 1993-06-01 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor device having a lightly-doped drain structure |
US4978628A (en) * | 1986-11-19 | 1990-12-18 | Teledyne Industries, Inc. | Drail-well/extension high voltage MOS transistor structure and method of fabrication |
US4801555A (en) * | 1987-01-14 | 1989-01-31 | Motorola, Inc. | Double-implant process for forming graded source/drain regions |
JPS6480070A (en) * | 1987-09-21 | 1989-03-24 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
JP2666403B2 (ja) * | 1988-01-06 | 1997-10-22 | セイコーエプソン株式会社 | Mis型半導体装置の製造方法 |
US4923824A (en) * | 1988-04-27 | 1990-05-08 | Vtc Incorporated | Simplified method of fabricating lightly doped drain insulated gate field effect transistors |
JP2508818B2 (ja) * | 1988-10-03 | 1996-06-19 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2513023B2 (ja) * | 1988-10-24 | 1996-07-03 | 三菱電機株式会社 | 電界効果型半導体装置およびその製造方法 |
CA2048675C (en) * | 1989-03-02 | 1999-02-16 | Albert W. Vinal | Fermi threshold field effect transistor |
US4990974A (en) * | 1989-03-02 | 1991-02-05 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor |
TW399774U (en) | 1989-07-03 | 2000-07-21 | Gen Electric | FET, IGBT and MCT structures to enhance operating characteristics |
JPH0824162B2 (ja) * | 1989-07-10 | 1996-03-06 | 日本電装株式会社 | 半導体装置およびその製造方法 |
KR940004449B1 (ko) * | 1990-03-02 | 1994-05-25 | 가부시키가이샤 도시바 | 반도체장치 |
US5084743A (en) * | 1990-03-15 | 1992-01-28 | North Carolina State University At Raleigh | High current, high voltage breakdown field effect transistor |
US5180681A (en) * | 1990-03-15 | 1993-01-19 | North Carolina State University | Method of making high current, high voltage breakdown field effect transistor |
US5369295A (en) * | 1992-01-28 | 1994-11-29 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
US5440160A (en) * | 1992-01-28 | 1995-08-08 | Thunderbird Technologies, Inc. | High saturation current, low leakage current fermi threshold field effect transistor |
US5525822A (en) * | 1991-01-28 | 1996-06-11 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor including doping gradient regions |
US5171700A (en) * | 1991-04-01 | 1992-12-15 | Sgs-Thomson Microelectronics, Inc. | Field effect transistor structure and method |
US5244823A (en) * | 1991-05-21 | 1993-09-14 | Sharp Kabushiki Kaisha | Process for fabricating a semiconductor device |
US5166765A (en) * | 1991-08-26 | 1992-11-24 | At&T Bell Laboratories | Insulated gate field-effect transistor with pulse-shaped doping |
US5814869A (en) * | 1992-01-28 | 1998-09-29 | Thunderbird Technologies, Inc. | Short channel fermi-threshold field effect transistors |
US5786620A (en) * | 1992-01-28 | 1998-07-28 | Thunderbird Technologies, Inc. | Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same |
US5367186A (en) * | 1992-01-28 | 1994-11-22 | Thunderbird Technologies, Inc. | Bounded tub fermi threshold field effect transistor |
US5543654A (en) * | 1992-01-28 | 1996-08-06 | Thunderbird Technologies, Inc. | Contoured-tub fermi-threshold field effect transistor and method of forming same |
US5352914A (en) * | 1992-08-03 | 1994-10-04 | Hughes Aircraft Company | Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor |
US5536959A (en) * | 1994-09-09 | 1996-07-16 | Mcnc | Self-aligned charge screen (SACS) field effect transistors and methods |
JPH08172187A (ja) * | 1994-12-16 | 1996-07-02 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2005167262A (ja) * | 1995-07-14 | 2005-06-23 | Seiko Instruments Inc | 半導体装置 |
US5698884A (en) * | 1996-02-07 | 1997-12-16 | Thunderbird Technologies, Inc. | Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same |
US6015991A (en) * | 1997-03-12 | 2000-01-18 | International Business Machines Corporation | Asymmetrical field effect transistor |
JPH10256394A (ja) | 1997-03-12 | 1998-09-25 | Internatl Business Mach Corp <Ibm> | 半導体構造体およびデバイス |
JP3763750B2 (ja) * | 2001-04-10 | 2006-04-05 | Ykk株式会社 | スライドファスナー仕上げ装置 |
JP2010245366A (ja) * | 2009-04-08 | 2010-10-28 | Fujifilm Corp | 電子素子及びその製造方法、並びに表示装置 |
US8957462B2 (en) * | 2010-12-09 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate |
US9001564B2 (en) | 2011-06-29 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for driving the same |
US9048118B2 (en) * | 2012-02-13 | 2015-06-02 | Maxpower Semiconductor Inc. | Lateral transistors with low-voltage-drop shunt to body diode |
US10319836B1 (en) * | 2017-12-20 | 2019-06-11 | International Business Machines Corporation | Effective junction formation in vertical transistor structures by engineered bottom source/drain epitaxy |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3631312A (en) * | 1969-05-15 | 1971-12-28 | Nat Semiconductor Corp | High-voltage mos transistor method and apparatus |
JPS51147268A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Manufacturing process of depression type field effect semiconductor de vice by ion-implantation |
US4028717A (en) * | 1975-09-22 | 1977-06-07 | Ibm Corporation | Field effect transistor having improved threshold stability |
US4017888A (en) * | 1975-12-31 | 1977-04-12 | International Business Machines Corporation | Non-volatile metal nitride oxide semiconductor device |
GB1569897A (en) * | 1975-12-31 | 1980-06-25 | Ibm | Field effect transistor |
US4078947A (en) * | 1976-08-05 | 1978-03-14 | International Business Machines Corporation | Method for forming a narrow channel length MOS field effect transistor |
JPS5384571A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Insulating gate type field effect transistor and its manufacture |
DE2729656A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
US4276095A (en) * | 1977-08-31 | 1981-06-30 | International Business Machines Corporation | Method of making a MOSFET device with reduced sensitivity of threshold voltage to source to substrate voltage variations |
DE2911726C2 (de) * | 1978-03-27 | 1985-08-01 | Ncr Corp., Dayton, Ohio | Verfahren zur Herstellung eines Feldeffekttransistors |
US4212683A (en) * | 1978-03-27 | 1980-07-15 | Ncr Corporation | Method for making narrow channel FET |
US4242691A (en) * | 1978-09-18 | 1980-12-30 | Mitsubishi Denki Kabushiki Kaisha | MOS Semiconductor device |
-
1981
- 1981-08-24 JP JP56131521A patent/JPS5833870A/ja active Pending
-
1982
- 1982-08-16 KR KR8203702A patent/KR900004179B1/ko active
- 1982-08-23 CA CA000409942A patent/CA1181532A/en not_active Expired
- 1982-08-23 EP EP82304433A patent/EP0073623B1/de not_active Expired
- 1982-08-23 DE DE8282304433T patent/DE3275684D1/de not_active Expired
-
1985
- 1985-10-15 US US06/786,715 patent/US4656492A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0073623A2 (de) | 1983-03-09 |
CA1181532A (en) | 1985-01-22 |
JPS5833870A (ja) | 1983-02-28 |
EP0073623B1 (de) | 1987-03-11 |
KR840001392A (ko) | 1984-04-30 |
KR900004179B1 (ko) | 1990-06-18 |
US4656492A (en) | 1987-04-07 |
EP0073623A3 (en) | 1983-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |