KR910013570A - 쇼트키.다이오드 - Google Patents

쇼트키.다이오드 Download PDF

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Publication number
KR910013570A
KR910013570A KR1019900020614A KR900020614A KR910013570A KR 910013570 A KR910013570 A KR 910013570A KR 1019900020614 A KR1019900020614 A KR 1019900020614A KR 900020614 A KR900020614 A KR 900020614A KR 910013570 A KR910013570 A KR 910013570A
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KR
South Korea
Prior art keywords
regions
conductivity type
schottky diodes
schottky diode
dispersed
Prior art date
Application number
KR1019900020614A
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English (en)
Other versions
KR940001055B1 (ko
Inventor
나오마사 수기따
Original Assignee
아오이 죠이찌
가부시끼가이샤 도시바
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Application filed by 아오이 죠이찌, 가부시끼가이샤 도시바 filed Critical 아오이 죠이찌
Publication of KR910013570A publication Critical patent/KR910013570A/ko
Application granted granted Critical
Publication of KR940001055B1 publication Critical patent/KR940001055B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/91—Diode arrays, e.g. diode read-only memory array

Abstract

내용 없음.

Description

쇼트키·다이오드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예에 관계되는 쇼트키·다이오드의 일부를 도시한 단면도,
제2도는 제1도의 쇼트키·다이오드의 제조에 있어서 사용되는 마스크 패턴의 한 예를 도시한 도면.

Claims (1)

  1. 제1 도전형 반도체 기판(10)에 있어서, 최대폭이 거의 500㎛ 이하로 규정된 단위 영역내의 표면에 상기 제1 도전형과는 반대의 도전형을 갖는 영역(3)이 소정 배열에 따라서 분산하여 다수 형성된 영역(4)를 1개의 반도체 펠릿 위에 복수개 갖고, 이들 각 영역 위에 장벽 전극(5)가 형성되고, 각 영역이 병렬 접속해서 되는 것을 특징으로 하는 쇼트키·다이오드.
    ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.
KR1019900020614A 1989-12-15 1990-12-14 쇼트키·다이오드 KR940001055B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-325394 1989-12-15
JP1325394A JPH065736B2 (ja) 1989-12-15 1989-12-15 ショットキー・ダイオード

Publications (2)

Publication Number Publication Date
KR910013570A true KR910013570A (ko) 1991-08-08
KR940001055B1 KR940001055B1 (ko) 1994-02-08

Family

ID=18176349

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900020614A KR940001055B1 (ko) 1989-12-15 1990-12-14 쇼트키·다이오드

Country Status (5)

Country Link
US (1) US5148241A (ko)
EP (1) EP0435105B1 (ko)
JP (1) JPH065736B2 (ko)
KR (1) KR940001055B1 (ko)
DE (1) DE69012078T2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614755A (en) * 1993-04-30 1997-03-25 Texas Instruments Incorporated High voltage Shottky diode
US6717229B2 (en) 2000-01-19 2004-04-06 Fabtech, Inc. Distributed reverse surge guard
AU2000267698A1 (en) * 2000-01-19 2001-07-31 Fabtech, Inc. Distributed reverse surge guard
JP3860705B2 (ja) * 2000-03-31 2006-12-20 新電元工業株式会社 半導体装置
US6362112B1 (en) 2000-11-08 2002-03-26 Fabtech, Inc. Single step etched moat
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
US6841825B2 (en) * 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
KR100861294B1 (ko) * 2006-02-24 2008-10-01 주식회사 하이닉스반도체 반도체 회로용 정전기 보호소자
JP4512121B2 (ja) * 2007-07-27 2010-07-28 旭化成東光パワーデバイス株式会社 ショットキーバリアダイオードの製造方法およびショットキーバリアダイオード

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499580A (en) * 1977-12-27 1979-08-06 Nec Corp Semiconductor integrated circuit device
JPS55162273A (en) * 1979-06-04 1980-12-17 Origin Electric Co Ltd Schottky barrier diode
JPS5650581A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Schottky diode
JPS6031112B2 (ja) * 1979-12-20 1985-07-20 日本電信電話株式会社 Ｐｎ接合を有するシヨツトキダイオ−ド
JPS5935183A (ja) * 1982-08-23 1984-02-25 株式会社東芝 高速増殖炉
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
JPS61147570A (ja) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd ショットキバリア半導体装置
GB2176339A (en) * 1985-06-10 1986-12-17 Philips Electronic Associated Semiconductor device with schottky junctions
JPH01257370A (ja) * 1988-04-07 1989-10-13 Sanken Electric Co Ltd ショットキバリア半導体装置
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード

Also Published As

Publication number Publication date
DE69012078D1 (de) 1994-10-06
DE69012078T2 (de) 1995-01-26
EP0435105B1 (en) 1994-08-31
US5148241A (en) 1992-09-15
KR940001055B1 (ko) 1994-02-08
JPH065736B2 (ja) 1994-01-19
EP0435105A1 (en) 1991-07-03
JPH03185871A (ja) 1991-08-13

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