DE69012078D1 - Methode zur Herstellung eines Schottkydioden-Bauelements. - Google Patents

Methode zur Herstellung eines Schottkydioden-Bauelements.

Info

Publication number
DE69012078D1
DE69012078D1 DE69012078T DE69012078T DE69012078D1 DE 69012078 D1 DE69012078 D1 DE 69012078D1 DE 69012078 T DE69012078 T DE 69012078T DE 69012078 T DE69012078 T DE 69012078T DE 69012078 D1 DE69012078 D1 DE 69012078D1
Authority
DE
Germany
Prior art keywords
manufacturing
schottky diode
diode device
schottky
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69012078T
Other languages
English (en)
Other versions
DE69012078T2 (de
Inventor
Naomasa Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69012078D1 publication Critical patent/DE69012078D1/de
Application granted granted Critical
Publication of DE69012078T2 publication Critical patent/DE69012078T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/91—Diode arrays, e.g. diode read-only memory array

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69012078T 1989-12-15 1990-12-14 Methode zur Herstellung eines Schottkydioden-Bauelements. Expired - Fee Related DE69012078T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1325394A JPH065736B2 (ja) 1989-12-15 1989-12-15 ショットキー・ダイオード

Publications (2)

Publication Number Publication Date
DE69012078D1 true DE69012078D1 (de) 1994-10-06
DE69012078T2 DE69012078T2 (de) 1995-01-26

Family

ID=18176349

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012078T Expired - Fee Related DE69012078T2 (de) 1989-12-15 1990-12-14 Methode zur Herstellung eines Schottkydioden-Bauelements.

Country Status (5)

Country Link
US (1) US5148241A (de)
EP (1) EP0435105B1 (de)
JP (1) JPH065736B2 (de)
KR (1) KR940001055B1 (de)
DE (1) DE69012078T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614755A (en) * 1993-04-30 1997-03-25 Texas Instruments Incorporated High voltage Shottky diode
US6717229B2 (en) 2000-01-19 2004-04-06 Fabtech, Inc. Distributed reverse surge guard
AU2000267698A1 (en) * 2000-01-19 2001-07-31 Fabtech, Inc. Distributed reverse surge guard
JP3860705B2 (ja) * 2000-03-31 2006-12-20 新電元工業株式会社 半導体装置
US6362112B1 (en) 2000-11-08 2002-03-26 Fabtech, Inc. Single step etched moat
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
US6841825B2 (en) * 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
KR100861294B1 (ko) * 2006-02-24 2008-10-01 주식회사 하이닉스반도체 반도체 회로용 정전기 보호소자
JP4512121B2 (ja) * 2007-07-27 2010-07-28 旭化成東光パワーデバイス株式会社 ショットキーバリアダイオードの製造方法およびショットキーバリアダイオード

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499580A (en) * 1977-12-27 1979-08-06 Nec Corp Semiconductor integrated circuit device
JPS55162273A (en) * 1979-06-04 1980-12-17 Origin Electric Co Ltd Schottky barrier diode
JPS5650581A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Schottky diode
JPS6031112B2 (ja) * 1979-12-20 1985-07-20 日本電信電話株式会社 Ｐｎ接合を有するシヨツトキダイオ−ド
JPS5935183A (ja) * 1982-08-23 1984-02-25 株式会社東芝 高速増殖炉
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
JPS61147570A (ja) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd ショットキバリア半導体装置
GB2176339A (en) * 1985-06-10 1986-12-17 Philips Electronic Associated Semiconductor device with schottky junctions
JPH01257370A (ja) * 1988-04-07 1989-10-13 Sanken Electric Co Ltd ショットキバリア半導体装置
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード

Also Published As

Publication number Publication date
JPH03185871A (ja) 1991-08-13
US5148241A (en) 1992-09-15
JPH065736B2 (ja) 1994-01-19
KR940001055B1 (ko) 1994-02-08
KR910013570A (ko) 1991-08-08
EP0435105B1 (de) 1994-08-31
DE69012078T2 (de) 1995-01-26
EP0435105A1 (de) 1991-07-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee