FR2598259B1 - Diode zener enterree et procede de fabrication. - Google Patents
Diode zener enterree et procede de fabrication.Info
- Publication number
- FR2598259B1 FR2598259B1 FR8701772A FR8701772A FR2598259B1 FR 2598259 B1 FR2598259 B1 FR 2598259B1 FR 8701772 A FR8701772 A FR 8701772A FR 8701772 A FR8701772 A FR 8701772A FR 2598259 B1 FR2598259 B1 FR 2598259B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- zener diode
- buried zener
- buried
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Glass Compositions (AREA)
- Led Device Packages (AREA)
- Soft Magnetic Materials (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/859,454 US4683483A (en) | 1986-05-05 | 1986-05-05 | Subsurface zener diode and method of making |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2598259A1 FR2598259A1 (fr) | 1987-11-06 |
FR2598259B1 true FR2598259B1 (fr) | 1989-06-09 |
Family
ID=25330971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8701772A Expired FR2598259B1 (fr) | 1986-05-05 | 1987-02-12 | Diode zener enterree et procede de fabrication. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4683483A (fr) |
JP (1) | JPS62263678A (fr) |
DE (1) | DE3714790A1 (fr) |
FR (1) | FR2598259B1 (fr) |
GB (1) | GB2191038B (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4742021A (en) * | 1985-05-05 | 1988-05-03 | Burr-Brown Corporation | Subsurface zener diode and method of making |
EP0314399A3 (fr) * | 1987-10-30 | 1989-08-30 | Precision Monolithics Inc. | Diode zener enterrée et procédé pour sa fabrication |
US4910158A (en) * | 1987-11-23 | 1990-03-20 | Hughes Aircraft Company | Zener diode emulation and method of forming the same |
JP2570022B2 (ja) * | 1991-09-20 | 1997-01-08 | 株式会社日立製作所 | 定電圧ダイオード及びそれを用いた電力変換装置並びに定電圧ダイオードの製造方法 |
US5929502A (en) * | 1992-01-16 | 1999-07-27 | Harris Corporation | Level shifter stage with punch through diode |
FR2702308B1 (fr) * | 1993-03-01 | 1995-05-24 | Sgs Thomson Microelectronics | Diode à avalanche dans un circuit intégré bipolaire. |
US5756387A (en) * | 1994-12-30 | 1998-05-26 | Sgs-Thomson Microelectronics S.R.L. | Method for forming zener diode with high time stability and low noise |
US5883414A (en) * | 1996-02-06 | 1999-03-16 | Harris Corporation | Electrostatic discharge protection device |
US6365951B1 (en) * | 1998-08-13 | 2002-04-02 | Eugene Robert Worley | Methods on constructing an avalanche light emitting diode |
US6417527B1 (en) * | 1999-10-12 | 2002-07-09 | Matsushita Electric Industrial Co., Ltd. | Diode, method for fabricating the diode, and coplanar waveguide |
EP1191598B1 (fr) | 2000-01-18 | 2007-12-19 | Siemens Schweiz AG | Procédé de fabrication d'un photodétecteur à semiconducteur |
DE10159498A1 (de) * | 2001-12-04 | 2003-06-12 | Bosch Gmbh Robert | Halbleiteranordnung mit einem pn-Übergang und Verfahren zur Herstellung einer Halbleiteranordnung |
US6605859B1 (en) | 2002-06-27 | 2003-08-12 | Texas Instruments Incorporated | Buried Zener diode structure and method of manufacture |
KR101146972B1 (ko) * | 2005-03-16 | 2012-05-22 | 페어차일드코리아반도체 주식회사 | 고내압 다이오드를 갖는 고전압 집적회로 장치 |
JP2006352039A (ja) * | 2005-06-20 | 2006-12-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US20070200136A1 (en) * | 2006-02-28 | 2007-08-30 | Ronghua Zhu | Isolated zener diodes |
US7626243B2 (en) * | 2006-08-04 | 2009-12-01 | Advanced Analogic Technologies, Inc. | ESD protection for bipolar-CMOS-DMOS integrated circuit devices |
US7666751B2 (en) * | 2007-09-21 | 2010-02-23 | Semiconductor Components Industries, Llc | Method of forming a high capacitance diode and structure therefor |
US8274301B2 (en) * | 2009-11-02 | 2012-09-25 | International Business Machines Corporation | On-chip accelerated failure indicator |
FR2953062B1 (fr) * | 2009-11-24 | 2011-12-16 | St Microelectronics Tours Sas | Diode de protection bidirectionnelle basse tension |
US8198703B2 (en) * | 2010-01-18 | 2012-06-12 | Freescale Semiconductor, Inc. | Zener diode with reduced substrate current |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
DE2257823A1 (de) * | 1972-11-25 | 1974-06-06 | Philips Patentverwaltung | Halbleiterbauelement mit einer zenerdiode und verfahren zu seiner herstellung |
US3968427A (en) * | 1975-08-11 | 1976-07-06 | Hewlett-Packard Company | Group delay measurement apparatus and method |
US4127859A (en) * | 1977-02-25 | 1978-11-28 | National Semiconductor Corporation | Integrated circuit subsurface zener diode |
US4136349A (en) * | 1977-05-27 | 1979-01-23 | Analog Devices, Inc. | Ic chip with buried zener diode |
JPS5920561B2 (ja) * | 1977-06-22 | 1984-05-14 | 新明和工業株式会社 | 塵芥貯留装置 |
JPS54111290A (en) * | 1978-02-20 | 1979-08-31 | Nec Corp | Semiconductor device |
US4213806A (en) * | 1978-10-05 | 1980-07-22 | Analog Devices, Incorporated | Forming an IC chip with buried zener diode |
US4441114A (en) * | 1981-12-22 | 1984-04-03 | International Business Machines Corporation | CMOS Subsurface breakdown zener diode |
JPS5988871A (ja) * | 1982-11-12 | 1984-05-22 | バ−・ブラウン・コ−ポレ−ション | 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法 |
US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
-
1986
- 1986-05-05 US US06/859,454 patent/US4683483A/en not_active Expired - Lifetime
-
1987
- 1987-02-06 JP JP62026184A patent/JPS62263678A/ja active Pending
- 1987-02-12 FR FR8701772A patent/FR2598259B1/fr not_active Expired
- 1987-05-04 DE DE19873714790 patent/DE3714790A1/de not_active Ceased
- 1987-05-05 GB GB8710551A patent/GB2191038B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2598259A1 (fr) | 1987-11-06 |
GB2191038A (en) | 1987-12-02 |
JPS62263678A (ja) | 1987-11-16 |
DE3714790A1 (de) | 1987-11-12 |
US4683483A (en) | 1987-07-28 |
GB2191038B (en) | 1990-06-20 |
GB8710551D0 (en) | 1987-06-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |