DE3852072D1 - Photoelektrische Umwandlungsanordnung und Herstellungsverfahren. - Google Patents

Photoelektrische Umwandlungsanordnung und Herstellungsverfahren.

Info

Publication number
DE3852072D1
DE3852072D1 DE3852072T DE3852072T DE3852072D1 DE 3852072 D1 DE3852072 D1 DE 3852072D1 DE 3852072 T DE3852072 T DE 3852072T DE 3852072 T DE3852072 T DE 3852072T DE 3852072 D1 DE3852072 D1 DE 3852072D1
Authority
DE
Germany
Prior art keywords
manufacturing
photoelectric conversion
conversion device
photoelectric
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3852072T
Other languages
English (en)
Other versions
DE3852072T2 (de
Inventor
Kazuaki Tashiro
Masato Yamanobe
Toshiyuki Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3852072D1 publication Critical patent/DE3852072D1/de
Publication of DE3852072T2 publication Critical patent/DE3852072T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H01L31/1055Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
DE3852072T 1987-08-21 1988-08-19 Photoelektrische Umwandlungsanordnung und Herstellungsverfahren. Expired - Lifetime DE3852072T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208609A JPS6450558A (en) 1987-08-21 1987-08-21 Photoelectric converter and manufacture thereof

Publications (2)

Publication Number Publication Date
DE3852072D1 true DE3852072D1 (de) 1994-12-15
DE3852072T2 DE3852072T2 (de) 1995-04-06

Family

ID=16559045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3852072T Expired - Lifetime DE3852072T2 (de) 1987-08-21 1988-08-19 Photoelektrische Umwandlungsanordnung und Herstellungsverfahren.

Country Status (3)

Country Link
EP (1) EP0304336B1 (de)
JP (1) JPS6450558A (de)
DE (1) DE3852072T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1056180A (ja) * 1995-09-29 1998-02-24 Canon Inc 半導体装置及びその製造方法
JP2018182021A (ja) * 2017-04-11 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3112907A1 (de) * 1980-03-31 1982-01-07 Canon K.K., Tokyo "fotoelektrischer festkoerper-umsetzer"
US4607168A (en) * 1982-07-09 1986-08-19 Hitachi, Ltd. Photosensor array devices

Also Published As

Publication number Publication date
EP0304336A3 (en) 1989-07-26
DE3852072T2 (de) 1995-04-06
EP0304336A2 (de) 1989-02-22
JPS6450558A (en) 1989-02-27
EP0304336B1 (de) 1994-11-09

Similar Documents

Publication Publication Date Title
KR850000810A (ko) 광전변환 장치 및 그 제조방법
DE69010737D1 (de) Photoelektrische Wandlungsvorrichtung.
DE3751285D1 (de) Fotoelektrische Umwandlungsvorrichtung.
DE3788393D1 (de) Photoelektrischer Umformer.
DE3678816D1 (de) Anzeigevorrichtung und herstellungsverfahren.
KR890700922A (ko) 반도체 장치와 그 제조방법
KR880013254A (ko) 반도체장치 및 그 제조방법
KR870011686A (ko) 반도체장치 및 그 제조방법
DE3751242D1 (de) Photoelektrischer Wandler.
DE3863752D1 (de) Treibriemen und herstellungsverfahren.
KR870009477A (ko) 반도체장치와 그 제조방법
DE3874931D1 (de) Treibriemen und herstellungsverfahren.
NO873669L (no) Fremgangsmaate og emne for fremstilling av pakningslegemer.
DE69028156D1 (de) Photoelektrisches Umwandlungsgerät
DE3788978D1 (de) Halbleiterbildsensor und Herstellungsverfahren dafür.
DE3889603D1 (de) Photoelektrisches Umwandlungsgerät.
DE3888399D1 (de) Photoelektrische Kontakt-Umwandlungsvorrichtung.
KR870008394A (ko) 반도체장치 및 그 제조방법
DE3650362D1 (de) Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren.
DE3752235D1 (de) Photoelektrischer Wandler
DE3752072D1 (de) Photoelektrischer Wandler
KR890004428A (ko) 수지밀폐형소자 및 그 제조방법
DE3851275D1 (de) Photoelektrischer Umsetzer.
DE3788481D1 (de) Photoelektrischer Umformer.
DE3850157D1 (de) Photoelektrische Umwandlungsanordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition