DE3788393D1 - Photoelektrischer Umformer. - Google Patents

Photoelektrischer Umformer.

Info

Publication number
DE3788393D1
DE3788393D1 DE87307897T DE3788393T DE3788393D1 DE 3788393 D1 DE3788393 D1 DE 3788393D1 DE 87307897 T DE87307897 T DE 87307897T DE 3788393 T DE3788393 T DE 3788393T DE 3788393 D1 DE3788393 D1 DE 3788393D1
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87307897T
Other languages
English (en)
Other versions
DE3788393T2 (de
Inventor
Shigetoshi Sugawa
Nobuyoshi Tanaka
Toshiji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3788393D1 publication Critical patent/DE3788393D1/de
Application granted granted Critical
Publication of DE3788393T2 publication Critical patent/DE3788393T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
DE87307897T 1986-09-19 1987-09-07 Photoelektrischer Umformer. Expired - Fee Related DE3788393T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61219668A JPH07120767B2 (ja) 1986-09-19 1986-09-19 光電変換装置

Publications (2)

Publication Number Publication Date
DE3788393D1 true DE3788393D1 (de) 1994-01-20
DE3788393T2 DE3788393T2 (de) 1994-04-14

Family

ID=16739106

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87307897T Expired - Fee Related DE3788393T2 (de) 1986-09-19 1987-09-07 Photoelektrischer Umformer.

Country Status (4)

Country Link
US (1) US4972243A (de)
EP (1) EP0260858B1 (de)
JP (1) JPH07120767B2 (de)
DE (1) DE3788393T2 (de)

Families Citing this family (52)

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US5352920A (en) * 1988-06-06 1994-10-04 Canon Kabushiki Kaisha Photoelectric converter with light shielding sections
US5272345A (en) * 1989-09-22 1993-12-21 Ada Technologies, Inc. Calibration method and apparatus for measuring the concentration of components in a fluid
JP2810526B2 (ja) * 1989-11-21 1998-10-15 キヤノン株式会社 光電変換装置及び該装置を搭載した装置
US5241169A (en) * 1989-11-21 1993-08-31 Canon Kabushiki Kaisha Photoelectric conversion device having an improved control electrode structure and apparatus equipped with same
JP2548809B2 (ja) * 1989-11-22 1996-10-30 キヤノン株式会社 光電変換装置
JP2662062B2 (ja) * 1989-12-15 1997-10-08 キヤノン株式会社 光電変換装置
JP3120237B2 (ja) * 1990-01-10 2000-12-25 セイコーインスツルメンツ株式会社 イメージセンサ
JP2878376B2 (ja) * 1990-02-28 1999-04-05 キヤノン株式会社 光電変換装置
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
EP0444963B1 (de) * 1990-03-02 1997-09-17 Canon Kabushiki Kaisha Fotoelektrische Übertragungsvorrichtung
JP2690612B2 (ja) * 1990-10-05 1997-12-10 キヤノン株式会社 光電変換装置
US5283428A (en) * 1990-11-27 1994-02-01 Canon Kabushiki Kaisha Photoelectric converting device and information processing apparatus employing the same
US5260592A (en) * 1991-02-19 1993-11-09 Synaptics, Incorporated Integrating photosensor and imaging system having wide dynamic range with varactors
US5097305A (en) * 1991-02-19 1992-03-17 Synaptics Corporation Integrating photosensor and imaging system having wide dynamic range
US5324958A (en) * 1991-02-19 1994-06-28 Synaptics, Incorporated Integrating imaging systgem having wide dynamic range with sample/hold circuits
EP0515849A3 (en) * 1991-04-27 1993-05-19 Kanegafuchi Chemical Industry Co., Ltd. Image sensor
US5241884A (en) * 1991-10-11 1993-09-07 F. L. Smithe Machine Company, Inc. Apparatus for changing the length of envelope blanks cut from a continuous web
US5401952A (en) * 1991-10-25 1995-03-28 Canon Kabushiki Kaisha Signal processor having avalanche photodiodes
WO1993016494A1 (en) * 1992-01-31 1993-08-19 Analog Devices, Inc. Complementary bipolar polysilicon emitter devices
US5276348A (en) * 1992-06-09 1994-01-04 Advanced Photonix, Inc. Dot matrix pattern on photosensitive semi-conductor surface
EP0627847B1 (de) 1993-05-28 2001-04-11 Canon Kabushiki Kaisha Photoelektrische Umwandlungsanordnung
US5552619A (en) * 1995-05-10 1996-09-03 National Semiconductor Corporation Capacitor coupled contactless imager with high resolution and wide dynamic range
JPH09129864A (ja) 1995-10-30 1997-05-16 Canon Inc 半導体装置及びそれを用いた半導体回路、相関演算装置、信号処理システム
DE19612660A1 (de) * 1996-03-29 1997-10-02 Fraunhofer Ges Forschung Optische Sensorvorrichtung mit Störsignalkompensation
JP3142239B2 (ja) * 1996-06-11 2001-03-07 キヤノン株式会社 固体撮像装置
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
US5932902A (en) * 1996-08-19 1999-08-03 Sony Corporation Solid-state imaging device with element-separating electrodes
US5760458A (en) * 1996-10-22 1998-06-02 Foveonics, Inc. Bipolar-based active pixel sensor cell with poly contact and increased capacitive coupling to the base region
US5786623A (en) * 1996-10-22 1998-07-28 Foveonics, Inc. Bipolar-based active pixel sensor cell with metal contact and increased capacitive coupling to the base region
EP1621923B8 (de) 1997-06-12 2010-03-24 Sharp Kabushiki Kaisha Anzeigevorrichtung mit vertikal ausgerichtetem Flüssigkristall
JPH1126741A (ja) * 1997-07-04 1999-01-29 Toshiba Corp 固体撮像装置
JP3673620B2 (ja) * 1997-07-18 2005-07-20 キヤノン株式会社 光電変換装置
US5982011A (en) * 1997-11-24 1999-11-09 Stmicroelectronics, Inc. Photodiode structure augmented with active area photosensitive regions
JPH11196427A (ja) * 1997-12-26 1999-07-21 Canon Inc 単板カラー撮像装置
JP3496918B2 (ja) 1997-12-26 2004-02-16 キヤノン株式会社 固体撮像装置
US6169317B1 (en) 1998-02-13 2001-01-02 Canon Kabushiki Kaisha Photoelectric conversion device and image sensor
JP3507336B2 (ja) 1998-06-17 2004-03-15 キヤノン株式会社 光電変換装置
US6567571B1 (en) 1998-06-24 2003-05-20 Canon Kabushiki Kaisha Image sensing device capable of outputting image signals by blocks and processing circuit which processes image signals by blocks
US6587603B1 (en) 1998-07-06 2003-07-01 Canon Kabushiki Kaisha Sensor unit capable of outputting image signals by blocks and processing circuit which processes image signals by blocks
US7015964B1 (en) 1998-11-02 2006-03-21 Canon Kabushiki Kaisha Solid-state image pickup device and method of resetting the same
US7129985B1 (en) 1998-11-24 2006-10-31 Canon Kabushiki Kaisha Image sensing apparatus arranged on a single substrate
US6850278B1 (en) * 1998-11-27 2005-02-01 Canon Kabushiki Kaisha Solid-state image pickup apparatus
SG75190A1 (en) 1998-12-14 2000-09-19 Canon Kk Image processing method and apparatus image processing system and storage medium
US6878977B1 (en) * 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
WO2000059211A1 (en) 1999-03-31 2000-10-05 The Regents Of The University Of California Multi-channel detector readout method and integrated circuit
JP3524440B2 (ja) 1999-07-27 2004-05-10 キヤノン株式会社 固体撮像装置とその駆動方法
AU2001293062A1 (en) 2000-09-25 2002-04-08 Foveon, Inc. Active pixel sensor with noise cancellation
JP2003209665A (ja) * 2002-01-16 2003-07-25 Fuji Photo Film Co Ltd 画像読取方法および画像記録読取装置
JP5952548B2 (ja) * 2011-11-10 2016-07-13 キヤノン株式会社 半導体装置及びその駆動方法
WO2014046441A1 (ko) 2012-09-20 2014-03-27 (주)셀트리온 돌라스타틴 10 유도체, 그의 제조방법 및 그를 포함하는 항암제 조성물

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1169663A (en) * 1967-09-06 1969-11-05 Commissariat Energie Atomique Integrated Photosensitive Circuit
FR1582850A (de) * 1968-03-29 1969-10-10
US3624428A (en) * 1970-03-20 1971-11-30 Rca Corp Electric signal processing circuit employing capacitively scanned phototransistor array
US3626825A (en) * 1970-05-28 1971-12-14 Texas Instruments Inc Radiation-sensitive camera shutter and aperture control systems
US3753247A (en) * 1971-04-22 1973-08-14 Rca Corp Array of devices responsive to differential light signals
JPS5226974B2 (de) * 1973-02-14 1977-07-18
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
JPS54130828A (en) * 1978-03-31 1979-10-11 Canon Inc Photo sensor array device and image scanner using it
JPS5578680A (en) * 1978-12-08 1980-06-13 Matsushita Electric Ind Co Ltd Solid state pickup device
JPS5775469A (en) * 1980-10-29 1982-05-12 Oki Electric Ind Co Ltd Light receiving device
JPS5795771A (en) * 1980-12-05 1982-06-14 Fuji Photo Film Co Ltd Solid-state image pickup device
JPS57188183A (en) * 1981-05-15 1982-11-19 Canon Inc Solid-state image pickup device
US4587415A (en) * 1982-07-23 1986-05-06 Canon Kabushiki Kaisha Photo-detecting device with storage time control
JPS5919480A (ja) * 1982-07-26 1984-01-31 Olympus Optical Co Ltd 固体撮像装置
JPS59195861A (ja) * 1983-04-21 1984-11-07 Sony Corp 固体撮像装置の製造方法
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS6030282A (ja) * 1983-07-28 1985-02-15 Mitsubishi Electric Corp 固体撮像装置
JPS60120556A (ja) * 1983-12-02 1985-06-28 Hitachi Ltd 固体撮像装置
DE3413939A1 (de) * 1984-04-13 1985-10-24 Basf Ag, 6700 Ludwigshafen Ungesaettigte polyesterharze
JPH0719882B2 (ja) * 1985-05-01 1995-03-06 キヤノン株式会社 光電変換装置
JPS61252659A (ja) * 1985-05-01 1986-11-10 Canon Inc 光電変換装置
JPH0760888B2 (ja) * 1985-06-12 1995-06-28 キヤノン株式会社 光電変換装置
JPH0654957B2 (ja) * 1985-11-13 1994-07-20 キヤノン株式会社 光電変換装置
US4683441A (en) * 1985-11-19 1987-07-28 Siemens Aktiengesellschaft Apparatus for establishing the differences between multiple pairs of analog input signals
US4698599A (en) * 1986-06-11 1987-10-06 International Business Machines Corporation Differential summing amplifier for inputs having large common mode signals

Also Published As

Publication number Publication date
JPS6376476A (ja) 1988-04-06
EP0260858A2 (de) 1988-03-23
DE3788393T2 (de) 1994-04-14
JPH07120767B2 (ja) 1995-12-20
US4972243A (en) 1990-11-20
EP0260858A3 (en) 1989-03-29
EP0260858B1 (de) 1993-12-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee