DE69032994D1 - Photoelektrischer Umwandler - Google Patents

Photoelektrischer Umwandler

Info

Publication number
DE69032994D1
DE69032994D1 DE69032994T DE69032994T DE69032994D1 DE 69032994 D1 DE69032994 D1 DE 69032994D1 DE 69032994 T DE69032994 T DE 69032994T DE 69032994 T DE69032994 T DE 69032994T DE 69032994 D1 DE69032994 D1 DE 69032994D1
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032994T
Other languages
English (en)
Other versions
DE69032994T2 (de
Inventor
Masakazu Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69032994D1 publication Critical patent/DE69032994D1/de
Publication of DE69032994T2 publication Critical patent/DE69032994T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
DE69032994T 1989-12-15 1990-12-14 Photoelektrischer Umwandler Expired - Fee Related DE69032994T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1324988A JP2662062B2 (ja) 1989-12-15 1989-12-15 光電変換装置

Publications (2)

Publication Number Publication Date
DE69032994D1 true DE69032994D1 (de) 1999-04-15
DE69032994T2 DE69032994T2 (de) 1999-08-26

Family

ID=18171878

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69032994T Expired - Fee Related DE69032994T2 (de) 1989-12-15 1990-12-14 Photoelektrischer Umwandler

Country Status (4)

Country Link
US (1) US5500550A (de)
EP (1) EP0436335B1 (de)
JP (1) JP2662062B2 (de)
DE (1) DE69032994T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770872A (en) * 1995-12-06 1998-06-23 Arai; Chihiro Photoelectric converter apparatus
JPH10284753A (ja) * 1997-04-01 1998-10-23 Sony Corp 半導体装置及びその製造方法
US5831322A (en) * 1997-06-25 1998-11-03 Advanced Photonix, Inc. Active large area avalanche photodiode array
US5757057A (en) * 1997-06-25 1998-05-26 Advanced Photonix, Inc. Large area avalanche photodiode array
EP1032049B1 (de) * 1999-02-25 2011-07-13 Canon Kabushiki Kaisha Photoelektrisches Umwandlungselement
US6878977B1 (en) * 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
JP2002026366A (ja) 2000-07-11 2002-01-25 Sony Corp 半導体装置
KR100450670B1 (ko) * 2002-02-09 2004-10-01 삼성전자주식회사 포토 다이오드를 갖는 이미지 센서 및 그 제조방법
JP4342142B2 (ja) * 2002-03-22 2009-10-14 富士通マイクロエレクトロニクス株式会社 半導体受光素子
JP4154165B2 (ja) * 2002-04-05 2008-09-24 キヤノン株式会社 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置
WO2004079825A1 (ja) * 2003-03-06 2004-09-16 Sony Corporation 固体撮像素子及びその製造方法、並びに固体撮像素子の駆動方法
KR100548613B1 (ko) * 2003-10-14 2006-01-31 삼성전기주식회사 블루레이용 수광소자 및 그 제조방법
JP2009033043A (ja) * 2007-07-30 2009-02-12 Panasonic Corp 光半導体装置
JP6086648B2 (ja) 2012-03-12 2017-03-01 国立研究開発法人産業技術総合研究所 フォトトランジスタおよび撮像装置
DE102018107611A1 (de) 2018-03-29 2019-10-02 Vishay Semiconductor Gmbh Fotoempfindliches Halbleiterbauelement, Verfahren zum Bilden eines fotoempfindlichen Halbleiterbauelements

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633287A (en) * 1982-08-09 1986-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
JPS5988875A (ja) * 1982-11-12 1984-05-22 Toshiba Corp 光電変換素子
JPH0760888B2 (ja) * 1985-06-12 1995-06-28 キヤノン株式会社 光電変換装置
JPS62143483A (ja) * 1985-12-18 1987-06-26 Matsushita Electric Ind Co Ltd 受光素子
JPH07120767B2 (ja) * 1986-09-19 1995-12-20 キヤノン株式会社 光電変換装置
US4879470A (en) * 1987-01-16 1989-11-07 Canon Kabushiki Kaisha Photoelectric converting apparatus having carrier eliminating means
JPS63263774A (ja) * 1987-04-22 1988-10-31 Matsushita Electric Ind Co Ltd フオトトランジスタ
DE58908028D1 (de) * 1988-04-29 1994-08-18 Siemens Ag Als Fotodetektor verwendbare Bipolartransistorstruktur.

Also Published As

Publication number Publication date
EP0436335A2 (de) 1991-07-10
DE69032994T2 (de) 1999-08-26
JPH03185879A (ja) 1991-08-13
EP0436335B1 (de) 1999-03-10
JP2662062B2 (ja) 1997-10-08
US5500550A (en) 1996-03-19
EP0436335A3 (en) 1991-11-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee