DE3687151D1 - Photoelektrischer wandler. - Google Patents

Photoelektrischer wandler.

Info

Publication number
DE3687151D1
DE3687151D1 DE8686304482T DE3687151T DE3687151D1 DE 3687151 D1 DE3687151 D1 DE 3687151D1 DE 8686304482 T DE8686304482 T DE 8686304482T DE 3687151 T DE3687151 T DE 3687151T DE 3687151 D1 DE3687151 D1 DE 3687151D1
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686304482T
Other languages
English (en)
Other versions
DE3687151T2 (de
Inventor
Shigeyuki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3687151D1 publication Critical patent/DE3687151D1/de
Publication of DE3687151T2 publication Critical patent/DE3687151T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE8686304482T 1985-06-12 1986-06-11 Photoelektrischer wandler. Expired - Lifetime DE3687151T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60126285A JPH0714041B2 (ja) 1985-06-12 1985-06-12 光電変換装置

Publications (2)

Publication Number Publication Date
DE3687151D1 true DE3687151D1 (de) 1993-01-07
DE3687151T2 DE3687151T2 (de) 1993-06-09

Family

ID=14931428

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304482T Expired - Lifetime DE3687151T2 (de) 1985-06-12 1986-06-11 Photoelektrischer wandler.

Country Status (4)

Country Link
US (1) US4816889A (de)
EP (1) EP0206650B1 (de)
JP (1) JPH0714041B2 (de)
DE (1) DE3687151T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719882B2 (ja) * 1985-05-01 1995-03-06 キヤノン株式会社 光電変換装置
US5272345A (en) * 1989-09-22 1993-12-21 Ada Technologies, Inc. Calibration method and apparatus for measuring the concentration of components in a fluid
JP2810526B2 (ja) * 1989-11-21 1998-10-15 キヤノン株式会社 光電変換装置及び該装置を搭載した装置
US5241169A (en) * 1989-11-21 1993-08-31 Canon Kabushiki Kaisha Photoelectric conversion device having an improved control electrode structure and apparatus equipped with same
EP0433007B1 (de) * 1989-12-14 1997-03-12 Canon Kabushiki Kaisha Photoelektrische Umwandlervorrichtung mit verbessertem Rückstelltransistor und Informationsverarbeitungsgerät, welches diese verwendet
JP2708596B2 (ja) * 1990-01-31 1998-02-04 キヤノン株式会社 記録ヘッドおよびインクジェット記録装置
EP0441635B1 (de) * 1990-02-09 1995-05-24 Canon Kabushiki Kaisha Tintenstrahlaufzeichnungssystem
JP3061891B2 (ja) * 1991-06-21 2000-07-10 キヤノン株式会社 半導体装置の製造方法
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
US6940551B2 (en) 2000-09-25 2005-09-06 Foveon, Inc. Active pixel sensor with noise cancellation
US6713796B1 (en) 2001-01-19 2004-03-30 Dalsa, Inc. Isolated photodiode
US6534759B1 (en) * 2001-09-10 2003-03-18 National Semiconductor Corporation Vertical photodetector with improved photocarrier separation and low capacitance

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter

Also Published As

Publication number Publication date
EP0206650B1 (de) 1992-11-25
DE3687151T2 (de) 1993-06-09
JPH0714041B2 (ja) 1995-02-15
JPS61285758A (ja) 1986-12-16
US4816889A (en) 1989-03-28
EP0206650A1 (de) 1986-12-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition