DE3688633D1 - Photoelektrischer wandler. - Google Patents

Photoelektrischer wandler.

Info

Publication number
DE3688633D1
DE3688633D1 DE8686303252T DE3688633T DE3688633D1 DE 3688633 D1 DE3688633 D1 DE 3688633D1 DE 8686303252 T DE8686303252 T DE 8686303252T DE 3688633 T DE3688633 T DE 3688633T DE 3688633 D1 DE3688633 D1 DE 3688633D1
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686303252T
Other languages
English (en)
Other versions
DE3688633T2 (de
Inventor
Shigeyuki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3688633D1 publication Critical patent/DE3688633D1/de
Publication of DE3688633T2 publication Critical patent/DE3688633T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE86303252T 1985-05-01 1986-04-29 Photoelektrischer Wandler. Expired - Lifetime DE3688633T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60092291A JPH0719882B2 (ja) 1985-05-01 1985-05-01 光電変換装置

Publications (2)

Publication Number Publication Date
DE3688633D1 true DE3688633D1 (de) 1993-08-05
DE3688633T2 DE3688633T2 (de) 1993-11-18

Family

ID=14050308

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86303252T Expired - Lifetime DE3688633T2 (de) 1985-05-01 1986-04-29 Photoelektrischer Wandler.

Country Status (4)

Country Link
US (1) US4743955A (de)
EP (1) EP0200532B1 (de)
JP (1) JPH0719882B2 (de)
DE (1) DE3688633T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3706278A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung und herstellungsverfahren hierfuer
JPH07120767B2 (ja) * 1986-09-19 1995-12-20 キヤノン株式会社 光電変換装置
EP0277016B1 (de) * 1987-01-29 1998-04-15 Canon Kabushiki Kaisha Photovoltaischer Wandler
US4866291A (en) * 1987-06-30 1989-09-12 Canon Kabushiki Kaisha Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film
JP2680002B2 (ja) * 1987-11-14 1997-11-19 キヤノン株式会社 光電変換装置
EP0390606A3 (de) * 1989-03-31 1991-10-09 Canon Kabushiki Kaisha Halbleitervorrichtung mit einem hinsichtlich des Emittorgebietes und/oder der Basiselektrode verbesserten Transistor
JPH03181282A (ja) * 1989-12-11 1991-08-07 Fuji Photo Film Co Ltd 固体撮像デバイス
US5101252A (en) * 1989-12-14 1992-03-31 Canon Kabushiki Kaisha Photoelectric converting device with improved resetting transistor and information processing apparatus utilizing the same
JP2708596B2 (ja) * 1990-01-31 1998-02-04 キヤノン株式会社 記録ヘッドおよびインクジェット記録装置
GB2240951B (en) * 1990-02-09 1994-10-05 Canon Kk Ink jet recording system
US5386108A (en) * 1992-06-25 1995-01-31 Canon Kabushiki Kaisha Photoelectric conversion device for amplifying and outputting photoelectrically converted signal, and a method thereof
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
US6169317B1 (en) 1998-02-13 2001-01-02 Canon Kabushiki Kaisha Photoelectric conversion device and image sensor
WO2002027763A2 (en) 2000-09-25 2002-04-04 Foveon, Inc. Active pixel sensor with noise cancellation
US6685092B2 (en) * 2001-06-15 2004-02-03 Symbol Technologies, Inc. Molded imager optical package and miniaturized linear sensor-based code reading engines
JP5948007B2 (ja) * 2010-03-29 2016-07-06 セイコーエプソン株式会社 分光センサー及び分光フィルター

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624428A (en) * 1970-03-20 1971-11-30 Rca Corp Electric signal processing circuit employing capacitively scanned phototransistor array
JPS57145368A (en) * 1981-03-04 1982-09-08 Hitachi Ltd Semiconductor intergrated circuit
JPS59152662A (ja) * 1983-02-20 1984-08-31 Rohm Co Ltd フオトセンサ−用ｉｃ
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS60163474A (ja) * 1984-02-03 1985-08-26 Kyoto Semiconductor Kk ダイオ−ドアレ−
JPS60206061A (ja) * 1984-03-29 1985-10-17 Toshiba Corp イメ−ジセンサ
JPH0714041B2 (ja) * 1985-06-12 1995-02-15 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
DE3688633T2 (de) 1993-11-18
JPS61252661A (ja) 1986-11-10
US4743955A (en) 1988-05-10
JPH0719882B2 (ja) 1995-03-06
EP0200532A2 (de) 1986-11-05
EP0200532B1 (de) 1993-06-30
EP0200532A3 (en) 1987-09-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition