JPS57145368A - Semiconductor intergrated circuit - Google Patents

Semiconductor intergrated circuit

Info

Publication number
JPS57145368A
JPS57145368A JP56029905A JP2990581A JPS57145368A JP S57145368 A JPS57145368 A JP S57145368A JP 56029905 A JP56029905 A JP 56029905A JP 2990581 A JP2990581 A JP 2990581A JP S57145368 A JPS57145368 A JP S57145368A
Authority
JP
Japan
Prior art keywords
film
light
substrate
elements
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56029905A
Other languages
Japanese (ja)
Inventor
Toji Mukai
Nobuaki Miyagawa
Takahide Ikeda
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56029905A priority Critical patent/JPS57145368A/en
Publication of JPS57145368A publication Critical patent/JPS57145368A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain the highly sensitive and stable elements over the range from an ultraviolet region to a near infrared region, by coating the exposed area of the elements and its vicinity by a light screening film such as metal through a semiconductor film, except for the light receiving part of a semiconductor substrate on the side where light ssnsitive elements such as photodiode are exposed. CONSTITUTION:A plurality of light sensitive elements PD1-PDn such as photodiodes, phototransistors, and photothyristors, a plurality of address switches AS1-ASn, and a scanning circuit SC are provided on a semiconductor substrate 1, and they are electrically connected. In this constitution, P type regions 14 are provided on an N type substrate 13 corresponding to the substrate 1, with the surface being exposed. PN junctions 15 are yielded between the substrate 13 and the regions 14. The entire surface is coated by an SiO2 film 2. Thereafter, the light screening conducting film 3 comprising metal, polycrystal semiconductor, and the like is deposited on the film 2, with the film 3 being extended to the inside of the region 14 by the length l which is the same as the width of the film 2. The light receiving part of each region 14 is located only in the film 2. Thus leak currents in the area other than the light receiving part are decreased.
JP56029905A 1981-03-04 1981-03-04 Semiconductor intergrated circuit Pending JPS57145368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56029905A JPS57145368A (en) 1981-03-04 1981-03-04 Semiconductor intergrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56029905A JPS57145368A (en) 1981-03-04 1981-03-04 Semiconductor intergrated circuit

Publications (1)

Publication Number Publication Date
JPS57145368A true JPS57145368A (en) 1982-09-08

Family

ID=12288991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56029905A Pending JPS57145368A (en) 1981-03-04 1981-03-04 Semiconductor intergrated circuit

Country Status (1)

Country Link
JP (1) JPS57145368A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0222338A2 (en) * 1985-11-12 1987-05-20 Kabushiki Kaisha Toshiba Semiconductor photo-sensing device
JPS62152163A (en) * 1985-12-25 1987-07-07 Res Dev Corp Of Japan Planar type photoelectric conversion device
JPS62226659A (en) * 1986-03-28 1987-10-05 Canon Inc Semiconductor device
US4743955A (en) * 1985-05-01 1988-05-10 Canon Kabushiki Kaisha Photoelectric converting device
JPS63269568A (en) * 1987-04-27 1988-11-07 Seiko Instr & Electronics Ltd Image sensor chip of contact-type image sensor
JPS6454758A (en) * 1987-08-26 1989-03-02 Fuji Electric Co Ltd Semiconductor integrated circuit device
US5153422A (en) * 1990-03-15 1992-10-06 Dainippon Screen Mfg. Co., Ltd. Photosensor and image scanner utilizing the same
EP0509597A2 (en) * 1991-04-19 1992-10-21 Philips Electronics Uk Limited Opto-electronic memory system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52131489A (en) * 1976-04-28 1977-11-04 Oki Electric Ind Co Ltd Photoelectric converter
JPS5474387A (en) * 1977-11-25 1979-06-14 Nec Corp Infrared-ray detector
JPS5552278A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Solid image pickup device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52131489A (en) * 1976-04-28 1977-11-04 Oki Electric Ind Co Ltd Photoelectric converter
JPS5474387A (en) * 1977-11-25 1979-06-14 Nec Corp Infrared-ray detector
JPS5552278A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Solid image pickup device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743955A (en) * 1985-05-01 1988-05-10 Canon Kabushiki Kaisha Photoelectric converting device
EP0222338A2 (en) * 1985-11-12 1987-05-20 Kabushiki Kaisha Toshiba Semiconductor photo-sensing device
JPS62152163A (en) * 1985-12-25 1987-07-07 Res Dev Corp Of Japan Planar type photoelectric conversion device
JPS62226659A (en) * 1986-03-28 1987-10-05 Canon Inc Semiconductor device
JPS63269568A (en) * 1987-04-27 1988-11-07 Seiko Instr & Electronics Ltd Image sensor chip of contact-type image sensor
JPS6454758A (en) * 1987-08-26 1989-03-02 Fuji Electric Co Ltd Semiconductor integrated circuit device
US5153422A (en) * 1990-03-15 1992-10-06 Dainippon Screen Mfg. Co., Ltd. Photosensor and image scanner utilizing the same
EP0509597A2 (en) * 1991-04-19 1992-10-21 Philips Electronics Uk Limited Opto-electronic memory system
EP0509597A3 (en) * 1991-04-19 1995-04-26 Philips Electronics Uk Ltd

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