JPS5678179A - Solid image pickup unit - Google Patents
Solid image pickup unitInfo
- Publication number
- JPS5678179A JPS5678179A JP15430679A JP15430679A JPS5678179A JP S5678179 A JPS5678179 A JP S5678179A JP 15430679 A JP15430679 A JP 15430679A JP 15430679 A JP15430679 A JP 15430679A JP S5678179 A JPS5678179 A JP S5678179A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrodes
- junction
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To stabilize a black level of a reproduced image by providing an opposite conductive layer to a substrate on a semiconductor substrate, and further, by providing a P-N junction in a broader region than the opposite conductive layer under an electrode which is photoshielded for optical black. CONSTITUTION:A P layer 11 which is the conductive layer opposite to a substrate 10 is provided on the N type semiconductor substrate 10, electrodes 13-1-13-N are arranged on the P layer 11 through an SiO2 layer 12 and an Al electrode 14 for photoshielding is provided in electrodes 13-1-13-N of the electrodes 13-1-13-N. Further, a reverse-biased P-N junction is provided on the surface of the P layer 11 below the photoshielded electrode 14. By making a width W of the P-N junction 15 larger than a thickness L of the P layer, signal electric-charges 16-1-16-N generated in the P layer 11 are prevented from reaching below the electrodes 13-1, 13-2... 13-L-2 through the P layer 11. And the signal electric-charges 16-1-16-N are prevented from leaking into the optical black part to stabilize the black level of the reproduced image.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15430679A JPS5678179A (en) | 1979-11-30 | 1979-11-30 | Solid image pickup unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15430679A JPS5678179A (en) | 1979-11-30 | 1979-11-30 | Solid image pickup unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5678179A true JPS5678179A (en) | 1981-06-26 |
Family
ID=15581229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15430679A Pending JPS5678179A (en) | 1979-11-30 | 1979-11-30 | Solid image pickup unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678179A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63224356A (en) * | 1987-03-13 | 1988-09-19 | Sony Corp | Solid state image sensor |
| US6465859B1 (en) | 2001-04-26 | 2002-10-15 | Fujitsu Limited | CMOS-type solid state imaging device that prevents charge inflow into optical black |
-
1979
- 1979-11-30 JP JP15430679A patent/JPS5678179A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63224356A (en) * | 1987-03-13 | 1988-09-19 | Sony Corp | Solid state image sensor |
| US6465859B1 (en) | 2001-04-26 | 2002-10-15 | Fujitsu Limited | CMOS-type solid state imaging device that prevents charge inflow into optical black |
| JP2002329854A (en) * | 2001-04-26 | 2002-11-15 | Fujitsu Ltd | Solid-state image pickup apparatus |
| JP4489319B2 (en) * | 2001-04-26 | 2010-06-23 | 富士通マイクロエレクトロニクス株式会社 | Solid-state imaging device |
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