DE3752072T2 - Photoelektrischer Wandler - Google Patents

Photoelektrischer Wandler

Info

Publication number
DE3752072T2
DE3752072T2 DE19873752072 DE3752072T DE3752072T2 DE 3752072 T2 DE3752072 T2 DE 3752072T2 DE 19873752072 DE19873752072 DE 19873752072 DE 3752072 T DE3752072 T DE 3752072T DE 3752072 T2 DE3752072 T2 DE 3752072T2
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19873752072
Other languages
English (en)
Other versions
DE3752072D1 (de
Inventor
Toshihiro Saika
Katsunori Hatanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP61187841A priority Critical patent/JPS6344759A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3752072D1 publication Critical patent/DE3752072D1/de
Publication of DE3752072T2 publication Critical patent/DE3752072T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer
DE19873752072 1986-08-12 1987-08-12 Photoelektrischer Wandler Expired - Fee Related DE3752072T2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61187841A JPS6344759A (en) 1986-08-12 1986-08-12 Photoelectric conversion device

Publications (2)

Publication Number Publication Date
DE3752072D1 DE3752072D1 (de) 1997-07-10
DE3752072T2 true DE3752072T2 (de) 1997-10-16

Family

ID=16213166

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873752072 Expired - Fee Related DE3752072T2 (de) 1986-08-12 1987-08-12 Photoelektrischer Wandler

Country Status (4)

Country Link
US (1) US5027176A (de)
EP (1) EP0256850B1 (de)
JP (1) JPS6344759A (de)
DE (1) DE3752072T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
JPH0225156U (de) * 1988-08-05 1990-02-19
JPH0261052U (de) * 1988-10-28 1990-05-07
JPH02219268A (en) * 1989-02-21 1990-08-31 Canon Inc Semiconductor device and photoelectric converter using same
DE4005494C2 (de) * 1989-02-21 1994-10-20 Canon Kk Halbleiter-Vorrichtung sowie Bildlesegerät mit dieser Halbleitervorrichtung mit optimierten elektrischen Eigenschaften
JPH02231762A (en) * 1989-03-06 1990-09-13 Konica Corp Image sensor
US5182625A (en) * 1990-04-26 1993-01-26 Fuji Xerox Co., Ltd. Image sensor and method of manufacturing the same
US5360744A (en) * 1990-01-11 1994-11-01 Fuji Xerox Co., Ltd. Method of manufacturing image sensor
JPH0750710B2 (ja) * 1990-06-06 1995-05-31 富士ゼロックス株式会社 多層配線構造
US5382975A (en) * 1991-08-30 1995-01-17 Fuji Xerox Co., Ltd. Image reading apparatus
US5888908A (en) * 1992-04-30 1999-03-30 Stmicroelectronics, Inc. Method for reducing reflectivity of a metal layer
JP3390875B2 (ja) * 1992-11-12 2003-03-31 日本テキサス・インスツルメンツ株式会社 半導体装置
JPH07335721A (ja) * 1994-06-13 1995-12-22 Mitsubishi Electric Corp アライメントマークを有する半導体装置
US6091150A (en) * 1996-09-03 2000-07-18 Micron Technology, Inc. Integrated circuitry comprising electrically insulative material over interconnect line tops, sidewalls and bottoms
US5665644A (en) * 1995-11-03 1997-09-09 Micron Technology, Inc. Semiconductor processing method of forming electrically conductive interconnect lines and integrated circuitry
JP2013089869A (ja) 2011-10-20 2013-05-13 Canon Inc 検出装置及び検出システム
JP6282363B2 (ja) * 2017-02-09 2018-02-21 キヤノン株式会社 検出装置及び検出システム

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US3898685A (en) * 1973-04-03 1975-08-05 Gen Electric Charge coupled imaging device with separate sensing and shift-out arrays
US3932775A (en) * 1974-07-25 1976-01-13 Rca Corporation Interlaced readout of charge stored in a charge coupled image sensing array
US4035829A (en) * 1975-01-13 1977-07-12 Rca Corporation Semiconductor device and method of electrically isolating circuit components thereon
US4675549A (en) * 1978-02-06 1987-06-23 Fairchild Camera And Instrument Corporation Black and white reference and end-of-scan indicator for charge coupled devices
US4480009A (en) * 1980-12-15 1984-10-30 M&T Chemicals Inc. Siloxane-containing polymers
JPS5884455A (en) * 1981-11-13 1983-05-20 Fujitsu Ltd Semiconductor memory device
JPS5994849A (en) * 1982-11-24 1984-05-31 Nec Corp Semiconductor integrated circuit device
US4650984A (en) * 1984-01-12 1987-03-17 Canon Kabushiki Kaisha Photosensor array for treating image information
JPS60178663A (en) * 1984-02-24 1985-09-12 Mitsubishi Electric Corp Large-scaled image sensor
JPS6132571A (en) * 1984-07-25 1986-02-15 Fuji Xerox Co Ltd Photoelectric conversion device
JPH07118761B2 (ja) * 1985-09-20 1995-12-18 富士ゼロックス株式会社 原稿読み取り装置
DE3751242T2 (de) * 1986-01-24 1995-09-14 Canon Kk Photoelektrischer Wandler.
JP2584774B2 (ja) * 1987-06-12 1997-02-26 キヤノン株式会社 密着型光電変換装置

Also Published As

Publication number Publication date
JPS6344759A (en) 1988-02-25
EP0256850A2 (de) 1988-02-24
US5027176A (en) 1991-06-25
EP0256850B1 (de) 1997-06-04
EP0256850A3 (de) 1988-08-10
DE3752072D1 (de) 1997-07-10

Similar Documents

Publication Publication Date Title
DE3752221D1 (de) Photoelektrischer Wandler
DE3788393T2 (de) Photoelektrischer Umformer.
DE3856165T2 (de) Photovoltaischer Wandler
DE3856221D1 (de) Photovoltaischer Wandler
DE3751242T2 (de) Photoelektrischer Wandler.
DE69033613D1 (de) Fotoelektrischer Umwandler
DE3486462D1 (de) Lichtelektrischer Wandler
DE3751639D1 (de) Analog-Digital-Wandler
DE3431603A1 (de) Photoelektrischer wandler
DE3688928T2 (de) Lichtelektrische Wandleranordnung.
DE3752235D1 (de) Photoelektrischer Wandler
DE3752072D1 (de) Photoelektrischer Wandler
DE3688633T2 (de) Photoelektrischer Wandler.
DE3788481T2 (de) Photoelektrischer Umformer.
DE3752126T2 (de) Photoelektrischer Wandler
DE69032994D1 (de) Photoelektrischer Umwandler
DE3851275D1 (de) Photoelektrischer Umsetzer.
DE3751739D1 (de) Lichtelektrischer Wandler
DE3687151T2 (de) Photoelektrischer wandler.
DE3407665A1 (de) Fotoelektrischer wandler
DE69033657T2 (de) Photoelektrischer umwandler
DE3612101A1 (de) Fotoelektrische wandlervorrichtung
DE3688804T2 (de) Lichtelektrische Wandleranordnung.
DE3853850T2 (de) Photoelektrischer Umwandler.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee