DE3752072T2 - Photoelektrischer Wandler - Google Patents

Photoelektrischer Wandler

Info

Publication number
DE3752072T2
DE3752072T2 DE3752072T DE3752072T DE3752072T2 DE 3752072 T2 DE3752072 T2 DE 3752072T2 DE 3752072 T DE3752072 T DE 3752072T DE 3752072 T DE3752072 T DE 3752072T DE 3752072 T2 DE3752072 T2 DE 3752072T2
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3752072T
Other languages
English (en)
Other versions
DE3752072D1 (de
Inventor
Toshihiro Saika
Katsunori Hatanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3752072D1 publication Critical patent/DE3752072D1/de
Application granted granted Critical
Publication of DE3752072T2 publication Critical patent/DE3752072T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer
DE3752072T 1986-08-12 1987-08-12 Photoelektrischer Wandler Expired - Fee Related DE3752072T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61187841A JPS6344759A (ja) 1986-08-12 1986-08-12 光電変換装置

Publications (2)

Publication Number Publication Date
DE3752072D1 DE3752072D1 (de) 1997-07-10
DE3752072T2 true DE3752072T2 (de) 1997-10-16

Family

ID=16213166

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3752072T Expired - Fee Related DE3752072T2 (de) 1986-08-12 1987-08-12 Photoelektrischer Wandler

Country Status (4)

Country Link
US (1) US5027176A (de)
EP (1) EP0256850B1 (de)
JP (1) JPS6344759A (de)
DE (1) DE3752072T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
JPH0225156U (de) * 1988-08-05 1990-02-19
JPH0261052U (de) * 1988-10-28 1990-05-07
JPH02231762A (ja) * 1989-03-06 1990-09-13 Konica Corp イメージセンサ
NL194140C (nl) * 1989-02-21 2001-07-03 Canon Kk Halfgeleiderinrichting met matrixbedradingssectie en foto-elektrische omzetfunctie.
JPH02219268A (ja) * 1989-02-21 1990-08-31 Canon Inc 半導体装置及びそれを用いた光電変換装置
US5360744A (en) * 1990-01-11 1994-11-01 Fuji Xerox Co., Ltd. Method of manufacturing image sensor
US5182625A (en) * 1990-04-26 1993-01-26 Fuji Xerox Co., Ltd. Image sensor and method of manufacturing the same
JPH0750710B2 (ja) * 1990-06-06 1995-05-31 富士ゼロックス株式会社 多層配線構造
US5382975A (en) * 1991-08-30 1995-01-17 Fuji Xerox Co., Ltd. Image reading apparatus
US5888908A (en) * 1992-04-30 1999-03-30 Stmicroelectronics, Inc. Method for reducing reflectivity of a metal layer
JP3390875B2 (ja) * 1992-11-12 2003-03-31 日本テキサス・インスツルメンツ株式会社 半導体装置
JPH07335721A (ja) * 1994-06-13 1995-12-22 Mitsubishi Electric Corp アライメントマークを有する半導体装置
US5665644A (en) 1995-11-03 1997-09-09 Micron Technology, Inc. Semiconductor processing method of forming electrically conductive interconnect lines and integrated circuitry
US6091150A (en) * 1996-09-03 2000-07-18 Micron Technology, Inc. Integrated circuitry comprising electrically insulative material over interconnect line tops, sidewalls and bottoms
JP2013089869A (ja) 2011-10-20 2013-05-13 Canon Inc 検出装置及び検出システム
JP6282363B2 (ja) * 2017-02-09 2018-02-21 キヤノン株式会社 検出装置及び検出システム

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
US3898685A (en) * 1973-04-03 1975-08-05 Gen Electric Charge coupled imaging device with separate sensing and shift-out arrays
US3932775A (en) * 1974-07-25 1976-01-13 Rca Corporation Interlaced readout of charge stored in a charge coupled image sensing array
US4035829A (en) * 1975-01-13 1977-07-12 Rca Corporation Semiconductor device and method of electrically isolating circuit components thereon
US4675549A (en) * 1978-02-06 1987-06-23 Fairchild Camera And Instrument Corporation Black and white reference and end-of-scan indicator for charge coupled devices
US4480009A (en) * 1980-12-15 1984-10-30 M&T Chemicals Inc. Siloxane-containing polymers
JPS5884455A (ja) * 1981-11-13 1983-05-20 Fujitsu Ltd 半導体記憶装置
JPS5994849A (ja) * 1982-11-24 1984-05-31 Nec Corp 半導体集積回路装置
US4650984A (en) * 1984-01-12 1987-03-17 Canon Kabushiki Kaisha Photosensor array for treating image information
JPS60178663A (ja) * 1984-02-24 1985-09-12 Mitsubishi Electric Corp 大形イメ−ジセンサ
JPS6132571A (ja) * 1984-07-25 1986-02-15 Fuji Xerox Co Ltd 光電変換装置
JPH07118761B2 (ja) * 1985-09-20 1995-12-18 富士ゼロックス株式会社 原稿読み取り装置
EP0232083B1 (de) * 1986-01-24 1995-04-19 Canon Kabushiki Kaisha Photoelektrischer Wandler
JP2584774B2 (ja) * 1987-06-12 1997-02-26 キヤノン株式会社 密着型光電変換装置

Also Published As

Publication number Publication date
DE3752072D1 (de) 1997-07-10
US5027176A (en) 1991-06-25
EP0256850A2 (de) 1988-02-24
EP0256850A3 (de) 1988-08-10
JPS6344759A (ja) 1988-02-25
EP0256850B1 (de) 1997-06-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee