DE3852072T2 - Photoelektrische Umwandlungsanordnung und Herstellungsverfahren. - Google Patents

Photoelektrische Umwandlungsanordnung und Herstellungsverfahren.

Info

Publication number
DE3852072T2
DE3852072T2 DE19883852072 DE3852072T DE3852072T2 DE 3852072 T2 DE3852072 T2 DE 3852072T2 DE 19883852072 DE19883852072 DE 19883852072 DE 3852072 T DE3852072 T DE 3852072T DE 3852072 T2 DE3852072 T2 DE 3852072T2
Authority
DE
Germany
Prior art keywords
manufacturing
photoelectric conversion
conversion device
photoelectric
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19883852072
Other languages
English (en)
Other versions
DE3852072D1 (de
Inventor
Kazuaki Tashiro
Masato Yamanobe
Toshiyuki Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3852072D1 publication Critical patent/DE3852072D1/de
Publication of DE3852072T2 publication Critical patent/DE3852072T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
DE19883852072 1987-08-21 1988-08-19 Photoelektrische Umwandlungsanordnung und Herstellungsverfahren. Expired - Lifetime DE3852072T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208609A JPS6450558A (en) 1987-08-21 1987-08-21 Photoelectric converter and manufacture thereof

Publications (2)

Publication Number Publication Date
DE3852072D1 DE3852072D1 (de) 1994-12-15
DE3852072T2 true DE3852072T2 (de) 1995-04-06

Family

ID=16559045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883852072 Expired - Lifetime DE3852072T2 (de) 1987-08-21 1988-08-19 Photoelektrische Umwandlungsanordnung und Herstellungsverfahren.

Country Status (3)

Country Link
EP (1) EP0304336B1 (de)
JP (1) JPS6450558A (de)
DE (1) DE3852072T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1056180A (ja) * 1995-09-29 1998-02-24 Canon Inc 半導体装置及びその製造方法
JP2018182021A (ja) * 2017-04-11 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3112907A1 (de) * 1980-03-31 1982-01-07 Canon K.K., Tokyo "fotoelektrischer festkoerper-umsetzer"
US4607168A (en) * 1982-07-09 1986-08-19 Hitachi, Ltd. Photosensor array devices

Also Published As

Publication number Publication date
EP0304336A2 (de) 1989-02-22
EP0304336B1 (de) 1994-11-09
DE3852072D1 (de) 1994-12-15
JPS6450558A (en) 1989-02-27
EP0304336A3 (en) 1989-07-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition