DE3650362T2 - Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren. - Google Patents
Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren.Info
- Publication number
- DE3650362T2 DE3650362T2 DE3650362T DE3650362T DE3650362T2 DE 3650362 T2 DE3650362 T2 DE 3650362T2 DE 3650362 T DE3650362 T DE 3650362T DE 3650362 T DE3650362 T DE 3650362T DE 3650362 T2 DE3650362 T2 DE 3650362T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- photoelectric conversion
- conversion device
- response photoelectric
- response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61001009A JPS62158362A (ja) | 1986-01-06 | 1986-01-06 | 光電変換装置の作成方法 |
JP61001008A JPS62158371A (ja) | 1986-01-06 | 1986-01-06 | 光電変換装置 |
JP61073746A JP2639645B2 (ja) | 1986-03-31 | 1986-03-31 | 光電変換装置の作成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3650362D1 DE3650362D1 (de) | 1995-09-14 |
DE3650362T2 true DE3650362T2 (de) | 1996-01-25 |
Family
ID=27274719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3650362T Expired - Fee Related DE3650362T2 (de) | 1986-01-06 | 1986-12-30 | Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren. |
Country Status (5)
Country | Link |
---|---|
US (3) | US4999693A (de) |
EP (1) | EP0228712B1 (de) |
KR (1) | KR910001194B1 (de) |
CN (1) | CN1008784B (de) |
DE (1) | DE3650362T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0393206B1 (de) * | 1988-10-14 | 1996-05-08 | Matsushita Electric Industrial Co., Ltd. | Bildsensor und verfahren zu dessen herstellung |
US5266828A (en) * | 1988-10-14 | 1993-11-30 | Matsushita Electric Industrial Co., Ltd. | Image sensors with an optical fiber array |
JP2508851B2 (ja) * | 1989-08-23 | 1996-06-19 | 日本電気株式会社 | 液晶表示素子用アクティブマトリクス基板とその製造方法 |
JPH03156980A (ja) * | 1989-11-14 | 1991-07-04 | Sumitomo Electric Ind Ltd | 受光素子 |
JP3210657B2 (ja) * | 1989-11-27 | 2001-09-17 | 株式会社日立製作所 | ヘテロ接合バイポーラトランジスタ |
US5187121A (en) * | 1991-12-18 | 1993-02-16 | International Business Machines Corporation | Process for fabrication of a semiconductor structure and contact stud |
US5449924A (en) * | 1993-01-28 | 1995-09-12 | Goldstar Electron Co., Ltd. | Photodiode having a Schottky barrier formed on the lower metallic electrode |
FR2701602B1 (fr) * | 1993-02-12 | 1995-03-31 | Thomson Csf | Détecteur thermique comprenant un isolant thermique en polymère expansé. |
US5470761A (en) * | 1993-09-13 | 1995-11-28 | Westinghouse Electric Corporation | Process for fabricating a front surface resonant mesh array detector |
US5626773A (en) * | 1995-01-03 | 1997-05-06 | Texas Instruments Incorporated | Structure and method including dry etching techniques for forming an array of thermal sensitive elements |
US6287888B1 (en) | 1997-12-26 | 2001-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and process for producing photoelectric conversion device |
JP2005032793A (ja) * | 2003-07-08 | 2005-02-03 | Matsushita Electric Ind Co Ltd | 有機光電変換素子 |
JP4905762B2 (ja) | 2005-08-23 | 2012-03-28 | 富士フイルム株式会社 | 光電変換素子、撮像素子、および該光電変換素子の製造方法 |
US8749483B2 (en) * | 2007-02-15 | 2014-06-10 | Pixart Imaging Inc. | Control device and control method for image display |
WO2012005205A1 (ja) * | 2010-07-05 | 2012-01-12 | Dic株式会社 | 透明導電層付き基体及びその製造方法、並びにタッチパネル用透明導電膜積層体、タッチパネル |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5137155B2 (de) * | 1973-03-12 | 1976-10-14 | ||
US3955082A (en) * | 1974-09-19 | 1976-05-04 | Northern Electric Company Limited | Photodiode detector with selective frequency response |
US4062038A (en) * | 1976-01-28 | 1977-12-06 | International Business Machines Corporation | Radiation responsive device |
US4281208A (en) * | 1979-02-09 | 1981-07-28 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing thereof |
US4316049A (en) * | 1979-08-28 | 1982-02-16 | Rca Corporation | High voltage series connected tandem junction solar battery |
JPS56136076A (en) * | 1980-03-26 | 1981-10-23 | Hitachi Ltd | Photoelectric converter |
US4405915A (en) * | 1980-03-28 | 1983-09-20 | Canon Kabushiki Kaisha | Photoelectric transducing element |
JPS56165371A (en) * | 1980-05-26 | 1981-12-18 | Shunpei Yamazaki | Semiconductor device |
US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
JPS5715476A (en) * | 1980-07-02 | 1982-01-26 | Canon Inc | Photosensor |
US4567374A (en) * | 1980-12-10 | 1986-01-28 | Fuji Xerox Co., Ltd. | Photoelectric converting device with a plurality of divided electrodes |
JPS57106083A (en) * | 1980-12-23 | 1982-07-01 | Toshiba Corp | Amorphous silicon diode array |
JPS57211787A (en) * | 1981-06-24 | 1982-12-25 | Hitachi Ltd | Amorphous silicon diode |
US4591892A (en) * | 1982-08-24 | 1986-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectric conversion device |
JPS5943568A (ja) * | 1982-09-02 | 1984-03-10 | Canon Inc | フオトセンサアレイ |
JPS5980964A (ja) * | 1982-11-01 | 1984-05-10 | Toshiba Corp | 光電変換素子 |
US4677742A (en) * | 1983-01-18 | 1987-07-07 | Energy Conversion Devices, Inc. | Electronic matrix arrays and method for making the same |
JPH0614552B2 (ja) * | 1983-02-02 | 1994-02-23 | 富士ゼロックス株式会社 | 光電変換素子の製造方法 |
JPS59147469A (ja) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | 非晶質シリコン太陽電池 |
DE3478779D1 (en) * | 1983-02-15 | 1989-07-27 | Sharp Kk | Two-dimensional image readout device |
JPS59172274A (ja) * | 1983-03-18 | 1984-09-28 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
JPS6045057A (ja) * | 1983-08-23 | 1985-03-11 | Toshiba Corp | 固体撮像装置の製造方法 |
JPS6047473A (ja) * | 1983-08-26 | 1985-03-14 | Hitachi Ltd | アモルフアスシリコン光センサ |
DE3546717C2 (de) * | 1984-06-21 | 1993-06-03 | Kyocera Corp., Kyoto, Jp | |
JPS617624A (ja) * | 1984-06-22 | 1986-01-14 | Fuji Xerox Co Ltd | 密着型イメージセンサ |
JPH0673372B2 (ja) * | 1985-06-24 | 1994-09-14 | 三菱電機株式会社 | 光読み取り装置及びその製造方法 |
FR2586327B1 (fr) * | 1985-08-14 | 1987-11-20 | Thomson Csf | Procede de fabrication d'un detecteur d'image lumineuse et detecteur lineaire d'images obtenu par ce procede |
DE3650363T2 (de) * | 1986-01-06 | 1996-01-25 | Semiconductor Energy Lab | Photoelektrische Umwandlungsvorrichtung und ihr Herstellungsverfahren. |
US4806496A (en) * | 1986-01-29 | 1989-02-21 | Semiconductor Energy Laboratory Co. Ltd. | Method for manufacturing photoelectric conversion devices |
US4678542A (en) * | 1986-07-25 | 1987-07-07 | Energy Conversion Devices, Inc. | Self-alignment process for thin film diode array fabrication |
US4711857A (en) * | 1986-08-28 | 1987-12-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
-
1986
- 1986-12-30 DE DE3650362T patent/DE3650362T2/de not_active Expired - Fee Related
- 1986-12-30 EP EP86118153A patent/EP0228712B1/de not_active Expired - Lifetime
-
1987
- 1987-01-06 KR KR1019870000014A patent/KR910001194B1/ko not_active IP Right Cessation
- 1987-01-06 US US07/000,851 patent/US4999693A/en not_active Expired - Fee Related
- 1987-01-06 CN CN87100058A patent/CN1008784B/zh not_active Expired
- 1987-11-24 US US07/124,566 patent/US5039620A/en not_active Expired - Lifetime
-
1990
- 1990-04-11 US US07/507,526 patent/US5164322A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0228712B1 (de) | 1995-08-09 |
CN87100058A (zh) | 1987-07-22 |
KR870007575A (ko) | 1987-08-20 |
US4999693A (en) | 1991-03-12 |
US5039620A (en) | 1991-08-13 |
CN1008784B (zh) | 1990-07-11 |
EP0228712A3 (en) | 1989-01-25 |
DE3650362D1 (de) | 1995-09-14 |
KR910001194B1 (ko) | 1991-02-25 |
US5164322A (en) | 1992-11-17 |
EP0228712A2 (de) | 1987-07-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |