DE3853850D1 - Photoelektrischer Umwandler. - Google Patents

Photoelektrischer Umwandler.

Info

Publication number
DE3853850D1
DE3853850D1 DE3853850T DE3853850T DE3853850D1 DE 3853850 D1 DE3853850 D1 DE 3853850D1 DE 3853850 T DE3853850 T DE 3853850T DE 3853850 T DE3853850 T DE 3853850T DE 3853850 D1 DE3853850 D1 DE 3853850D1
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3853850T
Other languages
English (en)
Other versions
DE3853850T2 (de
Inventor
Junichi Hoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3853850D1 publication Critical patent/DE3853850D1/de
Application granted granted Critical
Publication of DE3853850T2 publication Critical patent/DE3853850T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE3853850T 1987-07-03 1988-07-01 Photoelektrischer Umwandler. Expired - Fee Related DE3853850T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165522A JPH07120770B2 (ja) 1987-07-03 1987-07-03 光電変換装置

Publications (2)

Publication Number Publication Date
DE3853850D1 true DE3853850D1 (de) 1995-06-29
DE3853850T2 DE3853850T2 (de) 1995-10-26

Family

ID=15813988

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853850T Expired - Fee Related DE3853850T2 (de) 1987-07-03 1988-07-01 Photoelektrischer Umwandler.

Country Status (4)

Country Link
US (1) US5111264A (de)
EP (1) EP0297921B1 (de)
JP (1) JPH07120770B2 (de)
DE (1) DE3853850T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04267586A (ja) * 1991-02-22 1992-09-24 Nec Corp 同軸配線パターンおよびその形成方法
JP4207736B2 (ja) * 2003-10-01 2009-01-14 ソニー株式会社 固体撮像装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58199557A (ja) * 1982-05-15 1983-11-19 Toshiba Corp ダイナミツクメモリ装置
US4758734A (en) * 1984-03-13 1988-07-19 Nec Corporation High resolution image sensor array using amorphous photo-diodes
JPS60206164A (ja) * 1984-03-30 1985-10-17 Toshiba Corp 半導体メモリ装置
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
JPS61292960A (ja) * 1985-06-21 1986-12-23 Toshiba Corp 固体撮像装置
JPH0654957B2 (ja) * 1985-11-13 1994-07-20 キヤノン株式会社 光電変換装置
JPS63152167A (ja) * 1986-12-17 1988-06-24 Toshiba Corp 固体撮像装置
EP0277016B1 (de) * 1987-01-29 1998-04-15 Canon Kabushiki Kaisha Photovoltaischer Wandler

Also Published As

Publication number Publication date
JPH07120770B2 (ja) 1995-12-20
EP0297921A2 (de) 1989-01-04
EP0297921A3 (en) 1989-06-28
DE3853850T2 (de) 1995-10-26
JPS6410659A (en) 1989-01-13
US5111264A (en) 1992-05-05
EP0297921B1 (de) 1995-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee