JPS5715476A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS5715476A
JPS5715476A JP9087380A JP9087380A JPS5715476A JP S5715476 A JPS5715476 A JP S5715476A JP 9087380 A JP9087380 A JP 9087380A JP 9087380 A JP9087380 A JP 9087380A JP S5715476 A JPS5715476 A JP S5715476A
Authority
JP
Japan
Prior art keywords
layer
sub
ohmic layer
electrodes
ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9087380A
Other languages
Japanese (ja)
Other versions
JPH0334666B2 (en
Inventor
Toshiyuki Komatsu
Seishiro Yoshioka
Masaki Fukaya
Shunichi Uzawa
Yoshiaki Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP9087380A priority Critical patent/JPS5715476A/en
Priority to DE19813125976 priority patent/DE3125976A1/en
Priority to GB8120278A priority patent/GB2080025B/en
Priority to AU72458/81A priority patent/AU548158B2/en
Publication of JPS5715476A publication Critical patent/JPS5715476A/en
Publication of JPH0334666B2 publication Critical patent/JPH0334666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Abstract

PURPOSE: To obtain a sufficiently high output signal for a weak optical signal from a photosensor by forming a sub ohmic layer contacting a light transmission electrode formed on the side receiving optical information and forming a photoconductive layer and a sub ohmic layer or a ohmic layer on the sub ohmic layer.
CONSTITUTION: The prescribed number of light transmission picture element electrodes 102 are formed at the prescribed interval on a light transmission substrate 104, and a light shielding layer 103 made of opaque material having a light receiving window 105 is covered on the electrode. Then, a strip sub ohmic layer 106 is so formed along the arraying direction of the electrodes 102 on the electrodes 102 formed with the layer 103 as to cover the light receiving window 105, and a photoconductive layer 107, an ohmic layer 108 and a common electrodes 109 are sequentially laminated on the layer 106. In this configuration, the respective layers are formed of amorphous Si material containing at least one of hydrogen and halogen atoms by 1∼30atom%, the content of impurity of the sub ohmic layer is 500∼ 5,000ppm, and the thickness is specified to 25∼400Å.
COPYRIGHT: (C)1982,JPO&Japio
JP9087380A 1980-07-02 1980-07-02 Photosensor Granted JPS5715476A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9087380A JPS5715476A (en) 1980-07-02 1980-07-02 Photosensor
DE19813125976 DE3125976A1 (en) 1980-07-02 1981-07-01 PHOTOSENSOR
GB8120278A GB2080025B (en) 1980-07-02 1981-07-01 Semiconductor photosensor device
AU72458/81A AU548158B2 (en) 1980-07-02 1981-07-01 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9087380A JPS5715476A (en) 1980-07-02 1980-07-02 Photosensor

Publications (2)

Publication Number Publication Date
JPS5715476A true JPS5715476A (en) 1982-01-26
JPH0334666B2 JPH0334666B2 (en) 1991-05-23

Family

ID=14010612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9087380A Granted JPS5715476A (en) 1980-07-02 1980-07-02 Photosensor

Country Status (4)

Country Link
JP (1) JPS5715476A (en)
AU (1) AU548158B2 (en)
DE (1) DE3125976A1 (en)
GB (1) GB2080025B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3650362T2 (en) * 1986-01-06 1996-01-25 Semiconductor Energy Lab High-response photoelectric conversion device and manufacturing method.
DE3650363T2 (en) * 1986-01-06 1996-01-25 Semiconductor Energy Lab Photoelectric conversion device and its manufacturing method.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748546A (en) * 1969-05-12 1973-07-24 Signetics Corp Photosensitive device and array

Also Published As

Publication number Publication date
GB2080025B (en) 1985-01-09
GB2080025A (en) 1982-01-27
DE3125976C2 (en) 1991-01-24
AU7245881A (en) 1982-01-07
JPH0334666B2 (en) 1991-05-23
DE3125976A1 (en) 1982-02-04
AU548158B2 (en) 1985-11-28

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