JPS56135981A - Photoelectric conversion element - Google Patents

Photoelectric conversion element

Info

Publication number
JPS56135981A
JPS56135981A JP4006580A JP4006580A JPS56135981A JP S56135981 A JPS56135981 A JP S56135981A JP 4006580 A JP4006580 A JP 4006580A JP 4006580 A JP4006580 A JP 4006580A JP S56135981 A JPS56135981 A JP S56135981A
Authority
JP
Japan
Prior art keywords
formed
electrodes
element
light
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4006580A
Other versions
JPS6152580B2 (en
Inventor
Masaki Fukaya
Toshiyuki Komatsu
Yoshiaki Shirato
Shunichi Uzawa
Seishiro Yoshioka
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP55040065A priority Critical patent/JPS6152580B2/ja
Publication of JPS56135981A publication Critical patent/JPS56135981A/en
Publication of JPS6152580B2 publication Critical patent/JPS6152580B2/ja
Application status is Expired legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation

Abstract

PURPOSE:To improve a reading resolution and a reading speed by a method wherein the photoelectric conversion element is afforded with an element structure in which a function of amplifying a light signal current of one light receipt element is give to the element. CONSTITUTION:Stripe-shaped pairs of sources 2, 2' and drain electrodes 3, 3' are formed on a substrate 1. An a-Si film 4 is formed on the substrate 1 having the electrode pattern as described above, and in addition, an insulation layer 5 of Si3N4, SiO2, Al2O3 or the like is formed and a pair of gate electrodes 6, 6' are formed on the insulation layer 5. Further, the a-Si layer 7 is laminated, and light transmissive electrodes 8, 8' and light nontransmissive electrodes 9, 9' are formed in parallel at positions facing to the postions of the gate electrodes 6, 6' with the film 7 being sandwitched therebetween.
JP55040065A 1980-03-28 1980-03-28 Expired JPS6152580B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55040065A JPS6152580B2 (en) 1980-03-28 1980-03-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55040065A JPS6152580B2 (en) 1980-03-28 1980-03-28

Publications (2)

Publication Number Publication Date
JPS56135981A true JPS56135981A (en) 1981-10-23
JPS6152580B2 JPS6152580B2 (en) 1986-11-13

Family

ID=12570518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55040065A Expired JPS6152580B2 (en) 1980-03-28 1980-03-28

Country Status (1)

Country Link
JP (1) JPS6152580B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118143A (en) * 1982-01-06 1983-07-14 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5919372A (en) * 1982-07-16 1984-01-31 Nasa Integrated photosensitive mos semiconductor circuit
JPS6182466A (en) * 1984-09-29 1986-04-26 Toshiba Corp Photosensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118143A (en) * 1982-01-06 1983-07-14 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH0456468B2 (en) * 1982-01-06 1992-09-08 Handotai Energy Kenkyusho
JPS5919372A (en) * 1982-07-16 1984-01-31 Nasa Integrated photosensitive mos semiconductor circuit
JPS6182466A (en) * 1984-09-29 1986-04-26 Toshiba Corp Photosensor

Also Published As

Publication number Publication date
JPS6152580B2 (en) 1986-11-13

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