JPS56135981A - Photoelectric conversion element - Google Patents
Photoelectric conversion elementInfo
- Publication number
- JPS56135981A JPS56135981A JP4006580A JP4006580A JPS56135981A JP S56135981 A JPS56135981 A JP S56135981A JP 4006580 A JP4006580 A JP 4006580A JP 4006580 A JP4006580 A JP 4006580A JP S56135981 A JPS56135981 A JP S56135981A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- light
- photoelectric conversion
- conversion element
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
Abstract
PURPOSE:To improve a reading resolution and a reading speed by a method wherein the photoelectric conversion element is afforded with an element structure in which a function of amplifying a light signal current of one light receipt element is give to the element. CONSTITUTION:Stripe-shaped pairs of sources 2, 2' and drain electrodes 3, 3' are formed on a substrate 1. An a-Si film 4 is formed on the substrate 1 having the electrode pattern as described above, and in addition, an insulation layer 5 of Si3N4, SiO2, Al2O3 or the like is formed and a pair of gate electrodes 6, 6' are formed on the insulation layer 5. Further, the a-Si layer 7 is laminated, and light transmissive electrodes 8, 8' and light nontransmissive electrodes 9, 9' are formed in parallel at positions facing to the postions of the gate electrodes 6, 6' with the film 7 being sandwitched therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4006580A JPS56135981A (en) | 1980-03-28 | 1980-03-28 | Photoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4006580A JPS56135981A (en) | 1980-03-28 | 1980-03-28 | Photoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56135981A true JPS56135981A (en) | 1981-10-23 |
| JPS6152580B2 JPS6152580B2 (en) | 1986-11-13 |
Family
ID=12570518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4006580A Granted JPS56135981A (en) | 1980-03-28 | 1980-03-28 | Photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56135981A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58118143A (en) * | 1982-01-06 | 1983-07-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JPS5919372A (en) * | 1982-07-16 | 1984-01-31 | ナシヨナル・エアロノ−テイツクス・アンド・スペ−ス・アドミニストレ−シヨン | Integrated photosensitive mos semiconductor circuit |
| JPS6182466A (en) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | Photosensor |
-
1980
- 1980-03-28 JP JP4006580A patent/JPS56135981A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58118143A (en) * | 1982-01-06 | 1983-07-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JPH0456468B2 (en) * | 1982-01-06 | 1992-09-08 | Handotai Energy Kenkyusho | |
| JPS5919372A (en) * | 1982-07-16 | 1984-01-31 | ナシヨナル・エアロノ−テイツクス・アンド・スペ−ス・アドミニストレ−シヨン | Integrated photosensitive mos semiconductor circuit |
| JPS6182466A (en) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | Photosensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6152580B2 (en) | 1986-11-13 |
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