JPS57106083A - Amorphous silicon diode array - Google Patents

Amorphous silicon diode array

Info

Publication number
JPS57106083A
JPS57106083A JP18235280A JP18235280A JPS57106083A JP S57106083 A JPS57106083 A JP S57106083A JP 18235280 A JP18235280 A JP 18235280A JP 18235280 A JP18235280 A JP 18235280A JP S57106083 A JPS57106083 A JP S57106083A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
elements
diode array
doped
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18235280A
Inventor
Nobuki Ibaraki
Mitsuhiko Tashiro
Yoshiko Yoshioka
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/868PIN diodes

Abstract

PURPOSE:To prevent leakage of a current between adjoining elements and to facilitate the formation of a minute pattern, by forming a PIN junction nipping an undoping layer and facilitating separation between elements of a diode array. CONSTITUTION:A common electrode 2 is placed on an insulating substrate 1 such as glass, and an amorphous SiN layer, in which phosphorous is doped, is formed thereon. An amorphous SiP layer, in which arsenic is doped, is formed thereon, and an individual electrode 5 is placed thereon. An undoing non-crystalline Si layer 6 is positioned between the nip formed by layers 3 and 4 to form a PIN junction structure, and elements can be separated in a condition that a N layer 2 and the layer 6 are brought to common use. This facilitates the formation of a minute pattern and causes increasing the freedom in selecting an etching liquid.
JP18235280A 1980-12-23 1980-12-23 Amorphous silicon diode array Pending JPS57106083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18235280A JPS57106083A (en) 1980-12-23 1980-12-23 Amorphous silicon diode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18235280A JPS57106083A (en) 1980-12-23 1980-12-23 Amorphous silicon diode array

Publications (1)

Publication Number Publication Date
JPS57106083A true true JPS57106083A (en) 1982-07-01

Family

ID=16116803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18235280A Pending JPS57106083A (en) 1980-12-23 1980-12-23 Amorphous silicon diode array

Country Status (1)

Country Link
JP (1) JPS57106083A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130563A (en) * 1982-01-29 1983-08-04 Seiko Epson Corp Manufacture of image sensor
JPS59204266A (en) * 1983-05-06 1984-11-19 Fuji Xerox Co Ltd Thin film reading device
JPS6037178A (en) * 1983-08-09 1985-02-26 Citizen Watch Co Ltd Nonlinear resistance element for display device
JPS60189379A (en) * 1984-03-08 1985-09-26 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS60233853A (en) * 1984-05-02 1985-11-20 Oki Electric Ind Co Ltd Light receiving element array
JPS61295659A (en) * 1985-06-24 1986-12-26 Mitsubishi Electric Corp Optical reading device and manufacture thereof
JPS627156A (en) * 1985-07-03 1987-01-14 Mitsubishi Electric Corp Light reader
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
JPS639358A (en) * 1986-06-30 1988-01-16 Fuji Xerox Co Ltd Original reader
US4999693A (en) * 1986-01-06 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device with a high response speed

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130563A (en) * 1982-01-29 1983-08-04 Seiko Epson Corp Manufacture of image sensor
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
JPS59204266A (en) * 1983-05-06 1984-11-19 Fuji Xerox Co Ltd Thin film reading device
JPS6037178A (en) * 1983-08-09 1985-02-26 Citizen Watch Co Ltd Nonlinear resistance element for display device
JPH0566751B2 (en) * 1983-08-09 1993-09-22 Citizen Watch Co Ltd
JPS60189379A (en) * 1984-03-08 1985-09-26 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS60233853A (en) * 1984-05-02 1985-11-20 Oki Electric Ind Co Ltd Light receiving element array
JPS61295659A (en) * 1985-06-24 1986-12-26 Mitsubishi Electric Corp Optical reading device and manufacture thereof
JPS627156A (en) * 1985-07-03 1987-01-14 Mitsubishi Electric Corp Light reader
US4999693A (en) * 1986-01-06 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device with a high response speed
JPS639358A (en) * 1986-06-30 1988-01-16 Fuji Xerox Co Ltd Original reader

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