JPS5556660A - Manufacture of charge-coupled device - Google Patents

Manufacture of charge-coupled device

Info

Publication number
JPS5556660A
JPS5556660A JP13018078A JP13018078A JPS5556660A JP S5556660 A JPS5556660 A JP S5556660A JP 13018078 A JP13018078 A JP 13018078A JP 13018078 A JP13018078 A JP 13018078A JP S5556660 A JPS5556660 A JP S5556660A
Authority
JP
Japan
Prior art keywords
transfer electrodes
breaking
film
charge
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13018078A
Other languages
Japanese (ja)
Other versions
JPS6115592B2 (en
Inventor
Tadao Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP13018078A priority Critical patent/JPS5556660A/en
Publication of JPS5556660A publication Critical patent/JPS5556660A/en
Publication of JPS6115592B2 publication Critical patent/JPS6115592B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent the formation of difference in level and the breaking of wire by forming second transfer electrodes on a second flat insulating film. CONSTITUTION:A group of recesses having a depth of about 3,000Angstrom and width of about 10mu is provided in an n-type Si substrate 10 and covered by a heat oxidized film 12. First transfer electrodes 13 made of poly Si of about 3,000Angstrom are provided to burry the recesses. After a heat oxidized film 14 is formed on all over the surface, second transfer electrodes 15 made of Al and the like of about 3,000Angstrom are made on the film 14. If necessary, a CVD oxidized layer with the thickness of about 1,000Angstrom is stacked on it. In this constitution, the breaking of wire is not resulted in the second transfer electrodes and also the breaking of the conductors on the protective surface is not resulted.
JP13018078A 1978-10-20 1978-10-20 Manufacture of charge-coupled device Granted JPS5556660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13018078A JPS5556660A (en) 1978-10-20 1978-10-20 Manufacture of charge-coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13018078A JPS5556660A (en) 1978-10-20 1978-10-20 Manufacture of charge-coupled device

Publications (2)

Publication Number Publication Date
JPS5556660A true JPS5556660A (en) 1980-04-25
JPS6115592B2 JPS6115592B2 (en) 1986-04-24

Family

ID=15027959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13018078A Granted JPS5556660A (en) 1978-10-20 1978-10-20 Manufacture of charge-coupled device

Country Status (1)

Country Link
JP (1) JPS5556660A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
US5334868A (en) * 1991-02-08 1994-08-02 International Business Machines Corporation Sidewall charge-coupled device with trench isolation
US8448716B2 (en) 2007-10-19 2013-05-28 Hideo Yoshida Fire extinguisher gas ejector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
US5334868A (en) * 1991-02-08 1994-08-02 International Business Machines Corporation Sidewall charge-coupled device with trench isolation
US8448716B2 (en) 2007-10-19 2013-05-28 Hideo Yoshida Fire extinguisher gas ejector

Also Published As

Publication number Publication date
JPS6115592B2 (en) 1986-04-24

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